JPH0339832U - - Google Patents
Info
- Publication number
- JPH0339832U JPH0339832U JP10086889U JP10086889U JPH0339832U JP H0339832 U JPH0339832 U JP H0339832U JP 10086889 U JP10086889 U JP 10086889U JP 10086889 U JP10086889 U JP 10086889U JP H0339832 U JPH0339832 U JP H0339832U
- Authority
- JP
- Japan
- Prior art keywords
- gas
- reaction chamber
- flow rate
- raw material
- setting unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002994 raw material Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 claims 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 4
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10086889U JPH0339832U (cs) | 1989-08-28 | 1989-08-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10086889U JPH0339832U (cs) | 1989-08-28 | 1989-08-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0339832U true JPH0339832U (cs) | 1991-04-17 |
Family
ID=31649851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10086889U Pending JPH0339832U (cs) | 1989-08-28 | 1989-08-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0339832U (cs) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5898138A (ja) * | 1981-12-07 | 1983-06-10 | Hitachi Metals Ltd | 減圧ｃｖｄ装置 |
| JPS60211914A (ja) * | 1984-04-06 | 1985-10-24 | Hitachi Ltd | Ｃｖｄ装置 |
| JPS61251119A (ja) * | 1985-04-30 | 1986-11-08 | Fujitsu Ltd | 化学気相成長方法 |
| JPH01195277A (ja) * | 1988-01-28 | 1989-08-07 | Fujitsu Ltd | 薄膜の形成方法 |
-
1989
- 1989-08-28 JP JP10086889U patent/JPH0339832U/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5898138A (ja) * | 1981-12-07 | 1983-06-10 | Hitachi Metals Ltd | 減圧ｃｖｄ装置 |
| JPS60211914A (ja) * | 1984-04-06 | 1985-10-24 | Hitachi Ltd | Ｃｖｄ装置 |
| JPS61251119A (ja) * | 1985-04-30 | 1986-11-08 | Fujitsu Ltd | 化学気相成長方法 |
| JPH01195277A (ja) * | 1988-01-28 | 1989-08-07 | Fujitsu Ltd | 薄膜の形成方法 |
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