JPH0336764B2 - - Google Patents
Info
- Publication number
- JPH0336764B2 JPH0336764B2 JP14579385A JP14579385A JPH0336764B2 JP H0336764 B2 JPH0336764 B2 JP H0336764B2 JP 14579385 A JP14579385 A JP 14579385A JP 14579385 A JP14579385 A JP 14579385A JP H0336764 B2 JPH0336764 B2 JP H0336764B2
- Authority
- JP
- Japan
- Prior art keywords
- silicic acid
- sicl
- powder
- reaction
- acid powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims description 43
- 235000012239 silicon dioxide Nutrition 0.000 claims description 43
- 239000000843 powder Substances 0.000 claims description 29
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 9
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims 1
- 239000005049 silicon tetrachloride Substances 0.000 claims 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 30
- 238000006243 chemical reaction Methods 0.000 description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 18
- 239000012159 carrier gas Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 230000005260 alpha ray Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14579385A JPS627623A (ja) | 1985-07-04 | 1985-07-04 | 高純度ケイ酸の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14579385A JPS627623A (ja) | 1985-07-04 | 1985-07-04 | 高純度ケイ酸の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS627623A JPS627623A (ja) | 1987-01-14 |
JPH0336764B2 true JPH0336764B2 (enrdf_load_stackoverflow) | 1991-06-03 |
Family
ID=15393285
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14579385A Granted JPS627623A (ja) | 1985-07-04 | 1985-07-04 | 高純度ケイ酸の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS627623A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4542209B2 (ja) * | 1998-12-16 | 2010-09-08 | 日揮株式会社 | 多結晶シリコンの製造方法および高純度シリカの製造方法 |
JP2006131473A (ja) * | 2004-11-09 | 2006-05-25 | Sumitomo Titanium Corp | シリコン表面の発色方法 |
-
1985
- 1985-07-04 JP JP14579385A patent/JPS627623A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS627623A (ja) | 1987-01-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4676967A (en) | High purity silane and silicon production | |
US3012861A (en) | Production of silicon | |
CA1228220A (en) | Process for the production of silicon | |
WO2018006694A1 (zh) | 生产四氯化硅的方法 | |
White et al. | Staff-industry collaborative report vapor-phase production of colloidal silica | |
RU2451635C2 (ru) | Способ получения высокочистого элементного кремния | |
JPH0264006A (ja) | 太陽のシリコンの製造方法 | |
JP2001220157A (ja) | 非晶質合成シリカ粉体及びこれを用いたガラス成形体 | |
JPH01188414A (ja) | 多結晶シリコンの製造におけるポリマーのトリクロロシラン転化方法 | |
JPH0222004B2 (enrdf_load_stackoverflow) | ||
JP2001220126A (ja) | 結晶質合成シリカ粉体及びこれを用いたガラス成形体 | |
JP3026371B2 (ja) | アルコキシシランの製造方法 | |
JPH0336764B2 (enrdf_load_stackoverflow) | ||
JPS62143813A (ja) | 四塩化ケイ素の製造方法 | |
US3043664A (en) | Production of pure silane | |
US3016291A (en) | Pure silicon by hydrogen reduction | |
JPH02172811A (ja) | トリクロロシランの製造方法 | |
JPH01197309A (ja) | 粒状シリコンの製造方法 | |
JPH0413282B2 (enrdf_load_stackoverflow) | ||
JPH0297415A (ja) | 塩化水素又は塩化水素と塩素との混合物と金属珪素含有物質との反応の際に四塩化珪素の量を上昇させるための方法 | |
JPS6259515A (ja) | 高純度珪酸水和物の製造方法 | |
US3681036A (en) | Method of making silicon halides | |
SU865790A1 (ru) | Способ получени дихлорсилана | |
JPH03218917A (ja) | 三塩化ホウ素の製造方法 | |
JPS61186215A (ja) | 球状シリカの製造方法 |