JPH0336294B2 - - Google Patents

Info

Publication number
JPH0336294B2
JPH0336294B2 JP17201182A JP17201182A JPH0336294B2 JP H0336294 B2 JPH0336294 B2 JP H0336294B2 JP 17201182 A JP17201182 A JP 17201182A JP 17201182 A JP17201182 A JP 17201182A JP H0336294 B2 JPH0336294 B2 JP H0336294B2
Authority
JP
Japan
Prior art keywords
pattern
exposure
electron beam
patterns
exposure pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP17201182A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5961133A (ja
Inventor
Yasuhide Machida
Noriaki Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17201182A priority Critical patent/JPS5961133A/ja
Publication of JPS5961133A publication Critical patent/JPS5961133A/ja
Publication of JPH0336294B2 publication Critical patent/JPH0336294B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
JP17201182A 1982-09-30 1982-09-30 電子ビ−ム露光方法 Granted JPS5961133A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17201182A JPS5961133A (ja) 1982-09-30 1982-09-30 電子ビ−ム露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17201182A JPS5961133A (ja) 1982-09-30 1982-09-30 電子ビ−ム露光方法

Publications (2)

Publication Number Publication Date
JPS5961133A JPS5961133A (ja) 1984-04-07
JPH0336294B2 true JPH0336294B2 (de) 1991-05-31

Family

ID=15933870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17201182A Granted JPS5961133A (ja) 1982-09-30 1982-09-30 電子ビ−ム露光方法

Country Status (1)

Country Link
JP (1) JPS5961133A (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5393634A (en) * 1993-05-27 1995-02-28 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Continuous phase and amplitude holographic elements

Also Published As

Publication number Publication date
JPS5961133A (ja) 1984-04-07

Similar Documents

Publication Publication Date Title
JPH056339B2 (de)
JPS6311657B2 (de)
JP3512945B2 (ja) パターン形成方法及びパターン形成装置
JPS6112068A (ja) 電子ビームリソグラフ装置における近接効果補正方法
JPH07321011A (ja) 電子ビームの露光方法
JPS594017A (ja) 電子ビ−ム露光方法
JP3287333B2 (ja) 電子線露光用マスク、その製造方法及び半導体装置の製造方法
JPH0336294B2 (de)
JP3321234B2 (ja) 電子ビーム描画方法及び描画装置
JPH10144684A (ja) 荷電粒子線描画方法及び装置
JPH0336293B2 (de)
JPH0336292B2 (de)
JP2008311311A (ja) 荷電粒子ビーム露光方法及び荷電粒子ビーム露光装置
JPS6246059B2 (de)
JP2506144B2 (ja) パタ―ンデ―タ補正方法
JPS6317331B2 (de)
JPS6041223A (ja) 電子ビ−ム露光方法
JPS6314866B2 (de)
JPS6246058B2 (de)
JPS6262047B2 (de)
JPH05267142A (ja) 電子線描画装置
JPH0336296B2 (de)
JPH06140312A (ja) 電子ビーム描画方法
JPS59139625A (ja) 電子線描画装置
JPH0837146A (ja) 電子ビーム露光法および電子ビーム露光装置