JPH0335247B2 - - Google Patents

Info

Publication number
JPH0335247B2
JPH0335247B2 JP57204550A JP20455082A JPH0335247B2 JP H0335247 B2 JPH0335247 B2 JP H0335247B2 JP 57204550 A JP57204550 A JP 57204550A JP 20455082 A JP20455082 A JP 20455082A JP H0335247 B2 JPH0335247 B2 JP H0335247B2
Authority
JP
Japan
Prior art keywords
electro
thin film
optic
present
lanthanum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57204550A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5997532A (ja
Inventor
Hideaki Adachi
Kenzo Ochi
Kentaro Setsune
Takao Kawaguchi
Kyotaka Wasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57204550A priority Critical patent/JPS5997532A/ja
Publication of JPS5997532A publication Critical patent/JPS5997532A/ja
Publication of JPH0335247B2 publication Critical patent/JPH0335247B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Inorganic Compounds Of Heavy Metals (AREA)
  • Physical Vapour Deposition (AREA)
JP57204550A 1982-11-24 1982-11-24 電気光学薄膜材料の製造方法 Granted JPS5997532A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57204550A JPS5997532A (ja) 1982-11-24 1982-11-24 電気光学薄膜材料の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57204550A JPS5997532A (ja) 1982-11-24 1982-11-24 電気光学薄膜材料の製造方法

Publications (2)

Publication Number Publication Date
JPS5997532A JPS5997532A (ja) 1984-06-05
JPH0335247B2 true JPH0335247B2 (enExample) 1991-05-27

Family

ID=16492354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57204550A Granted JPS5997532A (ja) 1982-11-24 1982-11-24 電気光学薄膜材料の製造方法

Country Status (1)

Country Link
JP (1) JPS5997532A (enExample)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53116499A (en) * 1977-03-23 1978-10-11 Sharp Corp Preparing high dielectric thin film

Also Published As

Publication number Publication date
JPS5997532A (ja) 1984-06-05

Similar Documents

Publication Publication Date Title
Krupanidhi et al. RF planar magnetron sputtering and characterization of ferroelectric Pb (Zr, Ti) O3 films
US4037176A (en) Multi-layered substrate for a surface-acoustic-wave device
US3766041A (en) Method of producing piezoelectric thin films by cathodic sputtering
US3846649A (en) Piezoelectric transducer comprising oriented zinc oxide film and method of manufacture
US4631633A (en) Thin film capacitors and method of making the same
JPS62205266A (ja) 強誘電体薄膜素子及びその製造方法
JPH06317465A (ja) 焦電型赤外線検出器およびその製造方法
Yogo et al. Synthesis of highly oriented K (Ta, Nb) O3 (Ta: Nb= 65: 35) film using metal alkoxides
JPH0335247B2 (enExample)
JPH0333680B2 (enExample)
JP2834355B2 (ja) 強誘電体薄膜構成体の製造方法
JPS6241311B2 (enExample)
JPH02258700A (ja) 強誘電体薄膜及びその製造法
JPS6124213A (ja) ビスマス置換フエリ磁性ガーネツト　フイルムの形成方法
US4040927A (en) Cadmium tellurite thin films
KR950001294B1 (ko) 박막적외선센서 제조방법
JPS5942474B2 (ja) 圧電体薄膜の製造方法
JPS5849995B2 (ja) Ｅｌ表示装置
JPS6323128A (ja) 光空間変調素子
JPS636519B2 (enExample)
Jaber et al. Optimisation of the deposition and annealing parameters of paraelectric PLZT (28100) thin films grown by RF magnetron sputtering
JPS5938169B2 (ja) 透明強誘電体薄膜の形成方法
JP3167099B2 (ja) 誘電体薄膜素子及びその製造方法
JPS648474B2 (enExample)
JPS58167467A (ja) 高密度酸化物誘電材料の製造方法