JPS53116499A - Preparing high dielectric thin film - Google Patents

Preparing high dielectric thin film

Info

Publication number
JPS53116499A
JPS53116499A JP3248677A JP3248677A JPS53116499A JP S53116499 A JPS53116499 A JP S53116499A JP 3248677 A JP3248677 A JP 3248677A JP 3248677 A JP3248677 A JP 3248677A JP S53116499 A JPS53116499 A JP S53116499A
Authority
JP
Japan
Prior art keywords
thin film
high dielectric
dielectric thin
preparing high
pbo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3248677A
Other languages
Japanese (ja)
Inventor
Yoshihisa Nogami
Atsumaro Ueda
Mitsuhiko Yoshikawa
Katsuro Nakazawa
Masayoshi Koba
Shuhei Tsuchimoto
Atsushi Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP3248677A priority Critical patent/JPS53116499A/en
Publication of JPS53116499A publication Critical patent/JPS53116499A/en
Pending legal-status Critical Current

Links

Landscapes

  • Inorganic Compounds Of Heavy Metals (AREA)
  • Physical Vapour Deposition (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

PURPOSE: To provide a thin film having high permittivity, high dielectric strength and high transmittivity in a range of wave length above the visible light, by means of less controlling a quantity of PbO in the evaporating source, when in a time of constructing a thin film of transparent PZT system by methods of evaporation, sputtering, etc.
COPYRIGHT: (C)1978,JPO&Japio
JP3248677A 1977-03-23 1977-03-23 Preparing high dielectric thin film Pending JPS53116499A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3248677A JPS53116499A (en) 1977-03-23 1977-03-23 Preparing high dielectric thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3248677A JPS53116499A (en) 1977-03-23 1977-03-23 Preparing high dielectric thin film

Publications (1)

Publication Number Publication Date
JPS53116499A true JPS53116499A (en) 1978-10-11

Family

ID=12360305

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3248677A Pending JPS53116499A (en) 1977-03-23 1977-03-23 Preparing high dielectric thin film

Country Status (1)

Country Link
JP (1) JPS53116499A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209093A (en) * 1982-05-28 1983-12-05 松下電器産業株式会社 Thin film light emitting element
JPS5997532A (en) * 1982-11-24 1984-06-05 Matsushita Electric Ind Co Ltd Manufacture of electrooptic thin film material
CN107369555A (en) * 2016-05-11 2017-11-21 德尔福技术有限公司 Increase the PLZT capacitors and method of electric medium constant

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209093A (en) * 1982-05-28 1983-12-05 松下電器産業株式会社 Thin film light emitting element
JPH0439200B2 (en) * 1982-05-28 1992-06-26
JPS5997532A (en) * 1982-11-24 1984-06-05 Matsushita Electric Ind Co Ltd Manufacture of electrooptic thin film material
JPH0335247B2 (en) * 1982-11-24 1991-05-27 Matsushita Electric Ind Co Ltd
CN107369555A (en) * 2016-05-11 2017-11-21 德尔福技术有限公司 Increase the PLZT capacitors and method of electric medium constant

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