JPH0334158B2 - - Google Patents

Info

Publication number
JPH0334158B2
JPH0334158B2 JP59243340A JP24334084A JPH0334158B2 JP H0334158 B2 JPH0334158 B2 JP H0334158B2 JP 59243340 A JP59243340 A JP 59243340A JP 24334084 A JP24334084 A JP 24334084A JP H0334158 B2 JPH0334158 B2 JP H0334158B2
Authority
JP
Japan
Prior art keywords
address
defective
memory cell
amplitude
defective address
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59243340A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61123099A (ja
Inventor
Yoshinori Okajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59243340A priority Critical patent/JPS61123099A/ja
Priority to US06/788,567 priority patent/US4744060A/en
Priority to EP85307560A priority patent/EP0178948B1/en
Priority to DE8585307560T priority patent/DE3585015D1/de
Priority to KR1019850007703A priority patent/KR900008659B1/ko
Publication of JPS61123099A publication Critical patent/JPS61123099A/ja
Publication of JPH0334158B2 publication Critical patent/JPH0334158B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP59243340A 1984-10-19 1984-11-20 半導体記憶装置 Granted JPS61123099A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59243340A JPS61123099A (ja) 1984-11-20 1984-11-20 半導体記憶装置
US06/788,567 US4744060A (en) 1984-10-19 1985-10-17 Bipolar-transistor type random access memory having redundancy configuration
EP85307560A EP0178948B1 (en) 1984-10-19 1985-10-18 Bipolar-transistor random access memory having a redundancy configuration
DE8585307560T DE3585015D1 (de) 1984-10-19 1985-10-18 Bipolarer transistor-direktzugriffsspeicher mit redundanzkonfiguration.
KR1019850007703A KR900008659B1 (ko) 1984-10-19 1985-10-18 용장성 구조를 갖춘 바이폴러 트랜지스터형 랜덤 액세스 메모리

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59243340A JPS61123099A (ja) 1984-11-20 1984-11-20 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS61123099A JPS61123099A (ja) 1986-06-10
JPH0334158B2 true JPH0334158B2 (enrdf_load_stackoverflow) 1991-05-21

Family

ID=17102366

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59243340A Granted JPS61123099A (ja) 1984-10-19 1984-11-20 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS61123099A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2577724B2 (ja) * 1986-07-31 1997-02-05 三菱電機株式会社 半導体記憶装置
JPH0756349A (ja) * 1993-08-19 1995-03-03 Mitsubishi Paper Mills Ltd 平版印刷版用版面処理液

Also Published As

Publication number Publication date
JPS61123099A (ja) 1986-06-10

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