JPH033381B2 - - Google Patents
Info
- Publication number
- JPH033381B2 JPH033381B2 JP1709388A JP1709388A JPH033381B2 JP H033381 B2 JPH033381 B2 JP H033381B2 JP 1709388 A JP1709388 A JP 1709388A JP 1709388 A JP1709388 A JP 1709388A JP H033381 B2 JPH033381 B2 JP H033381B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- plasma
- potential
- ions
- energy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 84
- 150000002500 ions Chemical class 0.000 claims description 51
- 238000012545 processing Methods 0.000 claims description 11
- 239000011810 insulating material Substances 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 description 19
- 230000008021 deposition Effects 0.000 description 17
- 239000007789 gas Substances 0.000 description 17
- 238000005530 etching Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000012212 insulator Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- -1 fluorine ions Chemical class 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000004941 influx Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1709388A JPS63211631A (ja) | 1988-01-29 | 1988-01-29 | プラズマ処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1709388A JPS63211631A (ja) | 1988-01-29 | 1988-01-29 | プラズマ処理装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10916179A Division JPS5633839A (en) | 1979-08-29 | 1979-08-29 | Plasma treatment and device therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63211631A JPS63211631A (ja) | 1988-09-02 |
| JPH033381B2 true JPH033381B2 (cs) | 1991-01-18 |
Family
ID=11934376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1709388A Granted JPS63211631A (ja) | 1988-01-29 | 1988-01-29 | プラズマ処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63211631A (cs) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5007438B2 (ja) * | 2005-03-30 | 2012-08-22 | 地方独立行政法人山口県産業技術センター | ＳｉＮｘＯｙＣｚ膜及びその製造方法 |
-
1988
- 1988-01-29 JP JP1709388A patent/JPS63211631A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63211631A (ja) | 1988-09-02 |
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