JPH03292138A - High heat conductivity insulating metal substrate - Google Patents
High heat conductivity insulating metal substrateInfo
- Publication number
- JPH03292138A JPH03292138A JP9380890A JP9380890A JPH03292138A JP H03292138 A JPH03292138 A JP H03292138A JP 9380890 A JP9380890 A JP 9380890A JP 9380890 A JP9380890 A JP 9380890A JP H03292138 A JPH03292138 A JP H03292138A
- Authority
- JP
- Japan
- Prior art keywords
- silver
- tungsten alloy
- alumina film
- metal substrate
- alloy plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 51
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 43
- 239000002184 metal Substances 0.000 title claims abstract description 43
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910001080 W alloy Inorganic materials 0.000 claims abstract description 26
- UYKQQBUWKSHMIM-UHFFFAOYSA-N silver tungsten Chemical compound [Ag][W][W] UYKQQBUWKSHMIM-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052709 silver Inorganic materials 0.000 claims abstract description 15
- 239000004332 silver Substances 0.000 claims abstract description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 15
- 229910052802 copper Inorganic materials 0.000 abstract description 15
- 239000010949 copper Substances 0.000 abstract description 15
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 14
- 229910000679 solder Inorganic materials 0.000 abstract description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract description 6
- 238000007772 electroless plating Methods 0.000 abstract description 6
- 230000005496 eutectics Effects 0.000 abstract description 5
- 230000035939 shock Effects 0.000 abstract description 5
- 229910052763 palladium Inorganic materials 0.000 abstract description 3
- 238000010030 laminating Methods 0.000 abstract description 2
- 238000009713 electroplating Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 150000004703 alkoxides Chemical class 0.000 description 4
- 230000007062 hydrolysis Effects 0.000 description 4
- 238000006460 hydrolysis reaction Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 229910001593 boehmite Inorganic materials 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- -1 aluminum alkoxide Chemical class 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 239000011882 ultra-fine particle Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は高熱伝導性絶縁金属基板に係り、特に、高集積
化、ハイパワー化を対象とするハイブリッドＩＣ用の高
熱伝導性、高熱放散性絶縁金属基板、とりわけ、セラミ
ックス絶縁基板と金属板とを一体複合化した絶縁金属基
板の改良に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a high thermal conductivity insulated metal substrate, and in particular, a high thermal conductivity and high heat dissipation property for hybrid ICs intended for high integration and high power. The present invention relates to an improvement of an insulated metal substrate, particularly an insulated metal substrate that is an integral composite of a ceramic insulated substrate and a metal plate.
［従来の技術］
電子部品の軽薄短小化、高機能化、高集積化に対応して
、パワーＩＣ等を搭載する実装基板においては、ＩＣか
ら発生する熱を系外へより多量に、より速く放散させる
ことが強く要望されている。このため、従来から種々の
熱伝導性金属基板が開発され、製品化されてきた。一般
には、厚さ６００〜１０００μｍ程度のアルミナ基板に
メタライズ層を形成しておき、これと銅、ニッケル、ア
ルミニウム等の熱伝導性の良い金属板等とを、ハンダ、
銀ろう等により接合した熱伝導性絶縁金属基板或いはア
ルミナ基板と該金属板とを有機樹脂等により接着した熱
伝導性絶縁金属基板が提供されている。[Conventional technology] In response to the miniaturization, higher functionality, and higher integration of electronic components, mounting boards on which power ICs, etc. are mounted are designed to transfer heat generated from the ICs to the outside of the system in larger amounts and faster. There is a strong demand for dissipation. For this reason, various thermally conductive metal substrates have been developed and commercialized. Generally, a metallized layer is formed on an alumina substrate with a thickness of about 600 to 1000 μm, and a metal plate with good thermal conductivity such as copper, nickel, or aluminum is bonded with solder or
A thermally conductive insulated metal substrate is provided in which a thermally conductive insulated metal substrate or an alumina substrate bonded using silver solder or the like and the metal plate are bonded together using an organic resin or the like.
具体的には、第６図に示す如く、８００μｍの厚みのア
ルミナ基板１１にパラジウム処理した後、無電解めっき
により２〜３μｍの銅メタライズ層１２を形成し、これ
と２ｍｍ厚さの無酸素銅板１３とを共晶ハンダ１４でハ
ンダ付けしたもの、或いは、第７図に示す如く、６３５
μｍ厚みのアルよす基板１５とアルミニウム板１６とを
シリコーン樹脂１７で接着したものがある。Specifically, as shown in FIG. 6, after palladium treatment is applied to an alumina substrate 11 with a thickness of 800 μm, a copper metallized layer 12 with a thickness of 2 to 3 μm is formed by electroless plating, and this and an oxygen-free copper plate with a thickness of 2 mm are formed. 13 and soldered with eutectic solder 14, or as shown in FIG. 7, 635
There is one in which a μm-thick aluminum substrate 15 and an aluminum plate 16 are bonded together with a silicone resin 17.
また、アルミナより熱伝導率が大きい絶縁基板として、
ベリリヤ、窒化アルミニウム等があり、これにメタライ
ズ層を形成したものを前記と同様に金属板に接合或いは
接着した熱伝導性絶縁金属基板も提案されている。In addition, as an insulating substrate with higher thermal conductivity than alumina,
A thermally conductive insulating metal substrate made of materials such as beryllia and aluminum nitride, on which a metallized layer is formed and bonded or adhered to a metal plate in the same manner as described above, has also been proposed.
［発明が解決しようとする課！！ｉ］
しかしながら、上記従来の熱伝導性絶縁金属基板は、次
のような欠点があった。[The problem that the invention tries to solve! ! i] However, the conventional thermally conductive insulated metal substrate described above has the following drawbacks.
■ アルミナ絶縁基板又はアルよすよりも更に熱伝導率
が大きいベリリヤ、窒化アルミニウム絶縁基板は、銅、
アルミニウム等の熱伝導性の良い金属板と熱膨張係数が
大きく異なるため、両者を接合ないし接着して一体化し
た熱伝導性絶縁金属基板は、ヒートショックに弱く、ア
ルミナ等のセラミックス絶縁基板自体のクラック、割れ
発生等の破損、或いは、メタライズ層の剥離が発生する
。一方、アルミナの熱膨張係数に合うものとして、コバ
ール、４２アロイ等の金属があるが、これらは熱伝導率
が極めて低いため実用的ではない。■ Beryliya and aluminum nitride insulating substrates, which have higher thermal conductivity than alumina insulating substrates or aluminum, are copper,
Since the coefficient of thermal expansion is significantly different from that of a metal plate with good thermal conductivity such as aluminum, a thermally conductive insulated metal substrate made by joining or gluing the two into one is vulnerable to heat shock, and the ceramic insulating substrate itself such as alumina is Damage such as cracks and fractures, or peeling of the metallized layer may occur. On the other hand, there are metals such as Kovar and 42 alloy that match the coefficient of thermal expansion of alumina, but these have extremely low thermal conductivity and are therefore not practical.
■ 従来使用されている厚さ６００〜１０００μｍ程度
のアルミナ絶縁基板では厚みが大きいため、基板自体の
熱伝導性が悪く、熱伝導性絶縁金属基板としての性能に
劣る。(2) Since the alumina insulating substrate conventionally used has a thickness of about 600 to 1000 μm, the substrate itself has poor thermal conductivity and is inferior in performance as a thermally conductive insulated metal substrate.
■ 熱伝導性の良いベリリヤ絶縁基板は、毒性があるこ
とから国内では殆ど製造できず、供給地がアメリカなど
一部の場所に限定されるため、コスト高となる。また、
窒化アルミニウム絶縁基板では、表面が変質する、或い
は、コストが高い等の難題がある。■ Beryllium insulating substrates, which have good thermal conductivity, can hardly be manufactured domestically because they are toxic, and their supply is limited to a few places, such as the United States, resulting in high costs. Also,
Aluminum nitride insulating substrates have problems such as surface deterioration and high cost.
このように、従来の熱伝導性絶縁金属基板では上記のよ
うな欠点があり、いずれも、性能、品質、コスト、信頼
性等の面で問題があった。As described above, conventional thermally conductive insulated metal substrates have the above-mentioned drawbacks, and all of them have problems in terms of performance, quality, cost, reliability, etc.
本発明は上記従来の問題点を解決し、パワーハイブリッ
ドＩＣ用熱伝導性絶縁金属基板として好適な、高性能、
高信頼性、高品質かつ安価な高熱伝導性絶縁金属基板を
提供することを目的とする。The present invention solves the above-mentioned conventional problems and provides a high-performance, high-performance, thermally conductive insulated metal substrate for power hybrid ICs.
The purpose of the present invention is to provide a highly reliable, high quality, and inexpensive high thermal conductivity insulated metal substrate.
［課題を解決するための手段］
請求項（１）の高熱伝導性絶縁金属基板は、銀−タング
ステン合金板と、厚さ１０〜１５０μｍのアルよナフィ
ルムとを貼り合せてなることを特徴とする
請求項（２）の高熱伝導性絶縁金属基板は、請求項（１
）において、該銀−タングステン合金板が銀５〜３０重
量％を含有してなることを特徴とする。[Means for Solving the Problem] The highly thermally conductive insulated metal substrate of claim (1) is characterized by being formed by laminating a silver-tungsten alloy plate and an Alyona film with a thickness of 10 to 150 μm. The highly thermally conductive insulated metal substrate of claim (2) which is
), the silver-tungsten alloy plate is characterized in that it contains 5 to 30% by weight of silver.
即ち、本発明者らは、前記従来の問題点を解決すべく種
々検討した結果、絶縁基板として従来にない超薄型のア
ルミナフィルムを用いることにより熱伝導性を良くし、
また、このアルミナフィルムと熱膨張係数の近似した、
しかも熱伝導性の高い金属板、即ち銀−タングステン合
金板を貼り合せて一体化することにより、前述の種々の
問題が解決されることを見出し、本発明を完成させた。That is, as a result of various studies in order to solve the above-mentioned conventional problems, the present inventors improved thermal conductivity by using an unprecedented ultra-thin alumina film as an insulating substrate.
In addition, a material with a thermal expansion coefficient similar to that of this alumina film,
Furthermore, the inventors have discovered that the various problems described above can be solved by bonding and integrating metal plates with high thermal conductivity, that is, silver-tungsten alloy plates, and have completed the present invention.
以下に本発明の詳細な説明する。The present invention will be explained in detail below.
本発明で使用される銀−タングステン合金板は、例えば
、タングステン粉末を焼結して多孔体とし、これに銀を
溶浸することにより製造される複合材料であり、銀とタ
ングステンとの配合比により、熱膨張係数又は熱伝導率
を任意に変えることができる。従って、銀とタングステ
ンとの配合比を調整することにより、少なくともアルミ
ナフィルムの熱膨張係数に近似した銀−タングステン合
金板を使用するのが好ましい。即ち、アルミナの熱膨張
係数は７３ Ｘ １０ ””前後であるので、これに適
合させるために銀−タングステン合金中の銀含有量は５
〜３０重量％の範囲とするのが好適であり、特に１０〜
３０重量％の範囲とするのが好ましい。The silver-tungsten alloy plate used in the present invention is a composite material manufactured by, for example, sintering tungsten powder to form a porous body and infiltrating it with silver, and the mixing ratio of silver and tungsten is The thermal expansion coefficient or thermal conductivity can be changed arbitrarily. Therefore, it is preferable to use a silver-tungsten alloy plate whose coefficient of thermal expansion is at least close to that of the alumina film by adjusting the mixing ratio of silver and tungsten. That is, since the coefficient of thermal expansion of alumina is around 73 x 10'', the silver content in the silver-tungsten alloy should be adjusted to 5.
It is preferable that the amount ranges from 10 to 30% by weight, particularly 10 to 30% by weight.
It is preferably in the range of 30% by weight.
なお、銀−タングステン合金は市販品が提供されている
ため、これを購入使用することができる。Note that silver-tungsten alloys are commercially available and can be purchased and used.
一方、本発明で使用されるアルミナフィルムは厚さ１０
〜１５０ｕｍのものであり、このような極薄アルミナフ
ィルムは、従来のアルよす粉末法では製造不可能である
。このような極薄アルミナフィルムは、水酸化アルミニ
ウムのコロイド物質を出発原料として製造することが好
ましく、例えば、アルコキシド加水分解法は好適な製造
方法の一つである。即ち、アルミニウムアルコキシドを
合成した後、これに水を加えて加水分解し、ベーマイト
を生成させる。更に、これに酸を添加して解膠させ、超
微粒子のコロイドを作製する。次いで、これに有機バイ
ンダーを加え、粘度調整し、成形乾燥した後、得られた
グリーンシートを焼成する。このような方法によって、
１０〜１５０μｍという極く薄い、Ｗａ＠なアルミナフ
ィルムを作ることができる。もちろん、本発明に係るア
ルミナフィルムの製造方法は上記アルコキシド加水分解
法に何ら限定されるものではなく、その他の方法、例え
ば無機塩加水分解法でも製造できる。On the other hand, the alumina film used in the present invention has a thickness of 10
~150 um, and such an ultra-thin alumina film cannot be manufactured using the conventional aluminum powder method. Such an ultra-thin alumina film is preferably manufactured using a colloidal material of aluminum hydroxide as a starting material, and for example, an alkoxide hydrolysis method is one of the suitable manufacturing methods. That is, after synthesizing aluminum alkoxide, water is added to it and hydrolyzed to produce boehmite. Furthermore, an acid is added to peptize this to produce a colloid of ultrafine particles. Next, an organic binder is added thereto to adjust the viscosity, and after shaping and drying, the obtained green sheet is fired. By such a method,
An extremely thin Wa@ alumina film of 10 to 150 μm can be made. Of course, the method for producing an alumina film according to the present invention is not limited to the alkoxide hydrolysis method described above, and may also be produced by other methods, such as an inorganic salt hydrolysis method.
銀−タングステン合金板とアルミナフィルムとを貼り合
せて一体化する方法としては、特に制限はなく、銀ろう
付け、ハンダ付は等による接合法或いは有機樹脂等によ
る接着法を採用することができる。There are no particular restrictions on the method of bonding and integrating the silver-tungsten alloy plate and the alumina film, and bonding methods such as silver brazing or soldering, or bonding methods using organic resin or the like may be employed.
銀ろう付け、ハンダ付は等で接合する場合には、銀−タ
ングステン合金板及びアルミナフィルムの接合面側に、
銅、ニッケル、銀、金の接合用メタライズ層を予めめっ
き或いは厚膜法で形成しておけば良い、また、樹脂で接
着する場合には、熱伝導性の良いシリコーン樹脂等を用
いて直接接着すれば良い、その他、熱伝導性グリースを
使用することもできる。When joining with silver brazing, soldering, etc., on the joining surface side of the silver-tungsten alloy plate and alumina film,
It is sufficient to form a metallized layer for bonding copper, nickel, silver, and gold in advance by plating or thick film method.Also, when bonding with resin, direct bonding using silicone resin etc. with good thermal conductivity. Alternatively, you can also use thermally conductive grease.
［作用］
厚さ１０〜１５０μｍの極薄アルミナフィルムは、熱抵
抗が小さく、また、銀−タングステン合金はアルくすと
熱膨張係数が近似しているため、銅−タングステン合金
板とアルミナフィルムとを一体化することにより熱ａｍ
＆：強い高熱伝導性絶縁金属基板が提供される。特に、
銀−タングステン合金の銀含有量を５〜３０重量％とし
た場合には、熱膨張係数をアルミナに著しく近づけるこ
とができ、より一層優れた効果が奏される。[Function] Ultra-thin alumina film with a thickness of 10 to 150 μm has low thermal resistance, and silver-tungsten alloy has a thermal expansion coefficient similar to that of aluminum, so copper-tungsten alloy plate and alumina film are By integrating heat am
&: A strong high thermal conductivity insulated metal substrate is provided. especially,
When the silver content of the silver-tungsten alloy is 5 to 30% by weight, the coefficient of thermal expansion can be made extremely close to that of alumina, and even more excellent effects can be achieved.
［実施例］
以下に図面を参照して本発明の実施例について説明する
。[Examples] Examples of the present invention will be described below with reference to the drawings.
第１図〜第５図は本発明の高熱伝導性絶縁金属基板の実
施例を示す断面図である。1 to 5 are cross-sectional views showing embodiments of the highly thermally conductive insulated metal substrate of the present invention.
実施例１
第１図に示す本発明の高熱伝導性絶縁金属基板１を製造
した。Example 1 A highly thermally conductive insulated metal substrate 1 of the present invention shown in FIG. 1 was manufactured.
第１図において、アルミナフィルム２は、１００μｍの
厚みを有している。このアルミナフィルム２は、超微粒
子のベーマイトゾルを出発原料とするものであり、アル
コキシド加水分解法により作製されている。具体的には
、アルミニウムインゴットとアルコールとを反応させ、
アルくニウムアルコキシドを合成し、加水分解した後、
更に酸を添加して解膠し、ベーマイトゾルを生成させた
。これに有機バインダーを加え、スラリー化した後は、
ドクターブレードを通しキャスティングしながら成形、
乾燥してグリーンシートとした。その後、所定の形状に
切断して、焼成炉で焼威し、緻密なアルミナフィルムを
得ることができた。なお、アルミナ粒は微粒子からなっ
ているため、焼成体の厚みが薄くなってもピンホールが
なく、表面の平滑性も非常に良いものであった。また、
アルミナフィルムの厚みも所望の厚みに制御できた。In FIG. 1, the alumina film 2 has a thickness of 100 μm. This alumina film 2 uses ultrafine boehmite sol as a starting material, and is produced by an alkoxide hydrolysis method. Specifically, an aluminum ingot and alcohol are reacted,
After synthesizing and hydrolyzing alkium alkoxide,
Further, acid was added to peptize the mixture to produce a boehmite sol. After adding an organic binder to this and making it into a slurry,
Molding while casting through a doctor blade.
It was dried and made into a green sheet. Thereafter, it was cut into a predetermined shape and fired in a firing furnace, yielding a dense alumina film. Note that since the alumina grains are made of fine particles, there were no pinholes even when the thickness of the fired body was reduced, and the surface smoothness was also very good. Also,
The thickness of the alumina film could also be controlled to a desired thickness.
このようにして得られた１００μｍ厚みのアルミナフィ
ルム２にパラジウム処理して、無電解めっきにより銅メ
タライズ層３Ａを形成した。The alumina film 2 with a thickness of 100 μm thus obtained was treated with palladium, and a copper metallized layer 3A was formed by electroless plating.
次に、銀１０重量％、タンクゲステン９０重量％の組成
の銀−タングステン合金板４に電気めっきにより２〜３
μｍの銅メタライズ層３Ｂを形成した後、共晶ハンダ５
でハンダ付けを行ない、アルミナフィルム２と銀−タン
グステン合金板４とを一体化した。Next, 2 to 3
After forming the μm copper metallized layer 3B, the eutectic solder 5
Soldering was performed to integrate the alumina film 2 and the silver-tungsten alloy plate 4.
実施例２
１４２図に示す本発明の高熱伝導性絶縁金属基板ＩＡを
製造した。Example 2 A highly thermally conductive insulated metal substrate IA of the present invention shown in FIG. 142 was manufactured.
第２図の高熱伝導性絶縁金属基板ＩＡは、実施例１と同
様にして得られた１０μｍ厚さのアルミナフィルム２Ａ
と、銀２０重量％、タングステン８０重量％の組成の２
ｍｍ厚さの銀−タングステン合金板４Ａとをシリコーン
樹脂６で接着し一体化したものである。The highly thermally conductive insulated metal substrate IA in FIG. 2 is an alumina film 2A with a thickness of 10 μm obtained in the same manner as in Example 1.
and 2 with a composition of 20% silver and 80% tungsten by weight.
A silver-tungsten alloy plate 4A having a thickness of mm is bonded and integrated with a silicone resin 6.
実施例３
第３図に示す本発明の高熱伝導性絶縁金属基板ＩＢを製
造した。Example 3 A highly thermally conductive insulated metal substrate IB of the present invention shown in FIG. 3 was manufactured.
第３図の高熱伝導性絶縁金属基板ＩＢは、実施例１と同
様にして得られた１５０μｍ厚さのアルミナフィルム２
Ｂに、無電解めっきにより２〜４μｍ厚みのニッケルメ
タライズ層７Ａを形成したものと、銀２７．５重量％、
タングステン７２．５重量％の組成の銀−タングステン
合金板４Ｂに同様にニッケルメタライズ層７Ｂを形成し
たものとを銀ろう８でろう付けし一体化したものである
。The highly thermally conductive insulated metal substrate IB in FIG. 3 is a 150 μm thick alumina film 2 obtained in the same manner as in Example 1
In B, a nickel metallized layer 7A with a thickness of 2 to 4 μm was formed by electroless plating, and 27.5% by weight of silver,
A silver-tungsten alloy plate 4B having a composition of 72.5% by weight of tungsten and a nickel metallized layer 7B formed in the same manner are brazed with silver solder 8 and integrated.
実施例４
第４図に示す本発明の高熱伝導性絶縁金属基板ＩＣを製
造した。Example 4 A highly thermally conductive insulated metal substrate IC of the present invention shown in FIG. 4 was manufactured.
第４図の高熱伝導性絶縁金属基板ＩＣは、実施例１と同
様にして得られた５０μｍ厚さのアルミナフィルム２Ｃ
に無電解めっきにより銅メタライズ層３Ａを形成したも
のと、銀２５１！量％、タングステン７５重量％の組成
の銀−タングステン合金板４Ｃに同様に銅メタライズ層
３Ｂを形成したものとを、銅面を介して共晶ハンダ５で
ハンダ付けしたものである。The highly thermally conductive insulated metal substrate IC shown in FIG.
A copper metallized layer 3A is formed by electroless plating, and a silver 251! A silver-tungsten alloy plate 4C having a composition of 75% by weight of tungsten and a copper metallized layer 3B formed thereon are soldered with eutectic solder 5 through the copper surface.
実施例５
第５図に示す本発明の高熱伝導性絶縁金属基板１Ｄを製
造した。Example 5 A highly thermally conductive insulated metal substrate 1D of the present invention shown in FIG. 5 was manufactured.
第５図の高熱伝導性絶縁金属基板ＩＤは、実施例１と同
様にして得られた３０μｍ厚さのアルミナフィルム２Ｄ
に、銅導体パターン９と銅メタライズ層３Ａとを厚膜法
で形成したものと、銀５重量％、タングステン９５重量
％の組成の銀−タングステン合金板４Ｄに無電解めっき
により銅メタライズ層３Ｂを形成したものとを、共晶ハ
ンダ５でハンダ付けして一体化したものである。The highly thermally conductive insulated metal substrate ID in FIG. 5 is a 30 μm thick alumina film 2D obtained in the same manner as in Example 1.
A copper conductor pattern 9 and a copper metallized layer 3A are formed by a thick film method, and a copper metallized layer 3B is formed by electroless plating on a silver-tungsten alloy plate 4D having a composition of 5% by weight of silver and 95% by weight of tungsten. The formed parts are integrated by soldering with eutectic solder 5.
上記実施例１〜５で製造した高熱伝導性絶縁金属基板１
、ＩＡ、ＩＢ、ＩＣ，ＩＤについて、それぞれ、温度サ
イクル及びサーマルショック等の熱衝撃試験を行ない、
また、熱抵抗等を調べた結果、いずれも、接合部分のメ
タライズの剥れ、アル主すのクラックや破損がなく、ま
た、熱抵抗も従来のものよりも低く、高性能、高信頼性
のものであることが確認された。High thermal conductivity insulated metal substrate 1 manufactured in Examples 1 to 5 above
, IA, IB, IC, and ID were subjected to thermal shock tests such as temperature cycling and thermal shock, respectively.
In addition, as a result of examining thermal resistance, there was no peeling of the metallization at the joints, no cracking or damage to the aluminum main board, and the thermal resistance was lower than that of conventional products, resulting in high performance and high reliability. It was confirmed that it was.
［発明の効果］
以上詳述した通り、請求項（１）の高熱伝導性絶縁金属
基板によれば、熱衝撃に強く、しかも熱抵抗の小さい、
高性能、高信頼性かつ低コストの高熱伝導性絶縁金属基
板が提供される。[Effects of the Invention] As detailed above, the highly thermally conductive insulated metal substrate of claim (1) is resistant to thermal shock and has low thermal resistance.
A highly thermally conductive insulated metal substrate with high performance, high reliability, and low cost is provided.
特に、請求項（２）の高熱伝導性絶縁金属基板によれば
、より一層優れた効果が奏される。In particular, the highly thermally conductive insulated metal substrate of claim (2) provides even more excellent effects.
第１図、第２図、第３図、第４図及び第５図は本発明の
高熱伝導性絶縁金属基板の実施例を示す断面図、第６図
及びＮ７図は従来例を示す断面図である。
１、 ＩＡ、 ＩＢ、 ＩＣ，ＩＤ・・・高熱伝
導性絶縁金属基板、
２、 ２Ａ、 ２Ｂ、 ２Ｃ，２Ｄ４、 ４Ａ、
４Ｂ、 ４Ｃ，４Ｄ・・・銀−タングステン合金板
。Figures 1, 2, 3, 4 and 5 are cross-sectional views showing examples of the high thermal conductivity insulated metal substrate of the present invention, and Figures 6 and N7 are cross-sectional views showing conventional examples. It is. 1, IA, IB, IC, ID...high thermal conductivity insulated metal substrate, 2, 2A, 2B, 2C, 2D4, 4A,
4B, 4C, 4D... Silver-tungsten alloy plate.
Claims (2)
ｍのアルミナフィルムとを貼り合せてなることを特徴と
する高熱伝導性絶縁金属基板。(1) Silver-tungsten alloy plate with a thickness of 10 to 150μ
A highly thermally conductive insulated metal substrate characterized by being laminated with an alumina film of m.
含有してなることを特徴とする特許請求の範囲第１項記
載の高熱伝導性絶縁金属基板。(2) The highly thermally conductive insulated metal substrate according to claim 1, wherein the silver-tungsten alloy plate contains 5 to 30% by weight of silver.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9380890A JPH03292138A (en) | 1990-04-09 | 1990-04-09 | High heat conductivity insulating metal substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9380890A JPH03292138A (en) | 1990-04-09 | 1990-04-09 | High heat conductivity insulating metal substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03292138A true JPH03292138A (en) | 1991-12-24 |
Family
ID=14092707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9380890A Pending JPH03292138A (en) | 1990-04-09 | 1990-04-09 | High heat conductivity insulating metal substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03292138A (en) |
-
1990
- 1990-04-09 JP JP9380890A patent/JPH03292138A/en active Pending
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