JPH03277543A - Pyroconductive insulating metallic base plate - Google Patents
Pyroconductive insulating metallic base plateInfo
- Publication number
- JPH03277543A JPH03277543A JP7837690A JP7837690A JPH03277543A JP H03277543 A JPH03277543 A JP H03277543A JP 7837690 A JP7837690 A JP 7837690A JP 7837690 A JP7837690 A JP 7837690A JP H03277543 A JPH03277543 A JP H03277543A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- tungsten alloy
- alumina film
- thermally conductive
- metal substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910001080 W alloy Inorganic materials 0.000 claims abstract description 24
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims abstract description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052802 copper Inorganic materials 0.000 claims abstract description 23
- 239000010949 copper Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims description 48
- 229910052751 metal Inorganic materials 0.000 claims description 41
- 239000002184 metal Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 abstract description 18
- 230000007062 hydrolysis Effects 0.000 abstract description 6
- 238000006460 hydrolysis reaction Methods 0.000 abstract description 6
- 230000035939 shock Effects 0.000 abstract description 6
- 238000005476 soldering Methods 0.000 abstract description 6
- 238000005304 joining Methods 0.000 abstract description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 4
- 150000004703 alkoxides Chemical class 0.000 abstract description 4
- 229920005989 resin Polymers 0.000 abstract description 4
- 239000011347 resin Substances 0.000 abstract description 4
- 229910052709 silver Inorganic materials 0.000 abstract description 4
- 239000004332 silver Substances 0.000 abstract description 4
- 239000000084 colloidal system Substances 0.000 abstract description 3
- 238000010030 laminating Methods 0.000 abstract description 3
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 abstract description 2
- 229910017053 inorganic salt Inorganic materials 0.000 abstract description 2
- 239000002994 raw material Substances 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910001593 boehmite Inorganic materials 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- -1 aluminum alkoxide Chemical class 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 239000011882 ultra-fine particle Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は高熱伝導性絶縁金属基板に係り、特に、高集積
化、ハイパワー化を対象とするハイブリッドＩＣ用の高
熱伝導性、高熱放散性絶縁金属基板、とりわけ、セラミ
ックス絶縁基板と金属板とを一体複合化した金属基板の
改良に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a high thermal conductivity insulated metal substrate, and in particular, a high thermal conductivity and high heat dissipation property for hybrid ICs intended for high integration and high power. The present invention relates to an improvement of an insulated metal substrate, particularly a metal substrate that is a composite of a ceramic insulated substrate and a metal plate.
［従来の技術］
電子部品の軽薄短小化、高機能化、高集積化に対応して
、パワーＩＣ等を搭載する実装基板においては、ＩＣか
ら発生する熱を系外へより多量に、より速く放散させる
ことが強く要望されている。このため、従来から種々の
熱伝導性金属基板が開発され、製品化されてきた。一般
には、厚さ６００〜１０００μｍ程度のアルミナ基板に
メタライズ層を形成しておき、これと銅、ニッケル、ア
ルミニウム等の熱伝導性の良い金属板等とを、ハンダ、
銀ろう等により接合した熱伝導性絶縁金属基板或いはア
ルミナ基板と該金属板とを有機樹脂等により接着した熱
伝導性絶縁金属基板が提供されている。[Conventional technology] In response to the miniaturization, higher functionality, and higher integration of electronic components, mounting boards on which power ICs, etc. are mounted are designed to transfer heat generated from the ICs to the outside of the system in larger amounts and faster. There is a strong demand for dissipation. For this reason, various thermally conductive metal substrates have been developed and commercialized. Generally, a metallized layer is formed on an alumina substrate with a thickness of about 600 to 1000 μm, and a metal plate with good thermal conductivity such as copper, nickel, or aluminum is bonded with solder or
A thermally conductive insulated metal substrate is provided in which a thermally conductive insulated metal substrate or an alumina substrate bonded using silver solder or the like and the metal plate are bonded together using an organic resin or the like.
具体的には、第６図に示す如く、８００μｍの厚みのア
ルミナ基板１１にパラジウム処理した後、無電解めっき
により２〜３μｍの銅メタライズ層１２を形成し、これ
と２ｍｍ厚さの無酸素銅板１３とを共晶ハンダ１４でハ
ンダ付けしたもの、或いは、第７図に示す如く、６３５
μｍ厚みのアルミナ基板１５とアルミニウム板１６とを
シリコーン樹脂１７で接着したものがある。Specifically, as shown in FIG. 6, after palladium treatment is applied to an alumina substrate 11 with a thickness of 800 μm, a copper metallized layer 12 with a thickness of 2 to 3 μm is formed by electroless plating, and this and an oxygen-free copper plate with a thickness of 2 mm are formed. 13 and soldered with eutectic solder 14, or as shown in FIG. 7, 635
There is one in which a μm-thick alumina substrate 15 and an aluminum plate 16 are bonded together with a silicone resin 17.
また、アルミナより熱伝導率が大きい絶縁基部として、
ベリリヤ、窒化アルミニウム等があり、これにメタライ
ズ層を形成したものを前記と同村に金属板に接合或いは
接着した熱伝導性絶縁金層基板も提案されている。In addition, as an insulating base with higher thermal conductivity than alumina,
A thermally conductive insulating gold layer substrate has also been proposed in which a metallized layer is formed on beryllium, aluminum nitride, etc., and is bonded or adhered to a metal plate in the same manner as described above.
［発明が解決しようとする課題］
しかしながら、上記従来の熱伝導性絶縁金属基板は、次
のような欠点があった。[Problems to be Solved by the Invention] However, the above conventional thermally conductive insulated metal substrate has the following drawbacks.
■ アルミナ絶縁基板又はアルミナよりも更に熱伝導率
が大きいベリリヤ、窒化アルミニウム絶＆ｉ基板は、銅
、アルミニウム等の熱伝導性の良い金属板と熱膨張係数
が大きく異なるため、両者を接合ないし接着して一体化
した熱伝導性絶縁金属基板は、ヒートショックに弱く、
アルミナ等のセラミックス絶縁基板自体のクラック、割
れ発生等の破損、或いは、メタライズ層の剥離が発生す
る。一方、アルミナのＰＩＩ膨張係数に合うものとして
、コバール、４２アロイ等の金属があるが、これらは熱
伝導率が極めて低いため実用的ではない。■ Alumina insulating substrates or beryllium and aluminum nitride insulating substrates, which have higher thermal conductivity than alumina, have a significantly different coefficient of thermal expansion from metal plates with good thermal conductivity such as copper or aluminum, so they should not be joined or bonded together. The integrated thermally conductive insulated metal substrate is susceptible to heat shock,
Damage such as cracking or cracking of the ceramic insulating substrate itself made of alumina or the like, or peeling of the metallized layer may occur. On the other hand, there are metals such as Kovar and 42 alloy that match the PII expansion coefficient of alumina, but these are not practical because of their extremely low thermal conductivity.
■ 従来使用されている厚さ６００〜１０００μｍ程度
のアルミナ絶縁基板では厚みが大きいため、基板自体の
熱伝導性が悪く、熱伝導性絶縁金属基板としての性能に
劣る。(2) Since the alumina insulating substrate conventionally used has a thickness of about 600 to 1000 μm, the substrate itself has poor thermal conductivity and is inferior in performance as a thermally conductive insulated metal substrate.
■ 熱伝導性の良いヘリリヤ絶縁基板は、毒性があるこ
とから国内では殆ど製造できず、供給地がアメリカなど
一部の場所に限定されるため、コスト高となる。また、
窒化アルミニウム絶縁基板では、表面が変質する、或い
は、コストが高い等の難題がある。■ Heliriya insulating substrates, which have good thermal conductivity, can hardly be manufactured domestically because they are toxic, and their supply is limited to a few places such as the United States, resulting in high costs. Also,
Aluminum nitride insulating substrates have problems such as surface deterioration and high cost.
このように、従来の熱伝導性絶縁金属基板では上記のよ
うな欠点があり、いずれも、性能、品質、コスト、信頼
性等の面で問題があった。As described above, conventional thermally conductive insulated metal substrates have the above-mentioned drawbacks, and all of them have problems in terms of performance, quality, cost, reliability, etc.
本発明は上記従来の問題点を解決し、パワーハイブリッ
ドｒｃ用熱伝導性絶縁金属基板として好適な、高性能、
高信頼性、高品質かつ安価な高熱伝導性絶縁金属基板を
提供することを目的とする。The present invention solves the above-mentioned conventional problems and provides a high-performance, high-performance, thermally conductive insulated metal substrate for power hybrid RC.
The purpose of the present invention is to provide a highly reliable, high quality, and inexpensive high thermal conductivity insulated metal substrate.
［課題を解決するための手段］
請求項（１）の高熱伝導性絶縁金属基板は、銅−タング
ステン合金板と、厚さ１０〜１５０４ｍのアルミナフィ
ルムとを貼り合せてなることを特徴とする
請求項（２）の高熱伝導性絶縁金属基板は、請求項（１
）において、該銅−タングステン合金板が銅５〜３０重
量％を含有してなることを特徴とする。[Means for Solving the Problem] The highly thermally conductive insulated metal substrate of claim (1) is characterized in that it is formed by laminating a copper-tungsten alloy plate and an alumina film with a thickness of 10 to 1504 m. The highly thermally conductive insulated metal substrate of claim (2) is the highly thermally conductive insulated metal substrate of claim (1).
), the copper-tungsten alloy plate is characterized in that it contains 5 to 30% by weight of copper.
即ち、本発明者らは、前記従来の問題点を解決すべく種
々検討した結果、絶縁基板として従来にない超薄型のア
ルミナフィルムを用いることにより熱伝導性を良くシ、
また、このアルミナフィルムと熱膨張係数の近似した、
しかも熱伝導性の高い金属板、即ち銅−タングステン合
金板を貼り合せて一体化することにより、前述の種々の
問題が解決されることを見出し、本発明を完成させた。That is, as a result of various studies to solve the above-mentioned conventional problems, the present inventors have found that by using an unprecedented ultra-thin alumina film as an insulating substrate, thermal conductivity can be improved.
In addition, a material with a thermal expansion coefficient similar to that of this alumina film,
Furthermore, the inventors have discovered that the various problems described above can be solved by bonding and integrating metal plates with high thermal conductivity, that is, copper-tungsten alloy plates, and have completed the present invention.
以下に本発明の詳細な説明する。The present invention will be explained in detail below.
本発明で使用される銅−タングステン合金板は、例えば
、タングステン粉末を焼結して多孔体とし、これに銅を
溶浸することにより製造される複合材料であり、銅とタ
ングステンとの配合比により、熱膨張係数又は熱伝導率
を任意に変えることができる。従って、銅とタングステ
ンとの配合比を調整することにより、少なくともアルミ
ナフィルムの熱膨張係数に近似した銅−タングステン合
金板を使用するのが好ましい。即ち、アルミナの熱膨張
係数は７３ Ｘ １０−７前後であるので、これに適合
させるために銅−タングステン合金中の銅含有量は５〜
３０重量％の範囲とするのが好適であり、特に１０〜３
０ｆｉ量％の範囲とするのが好ましい。The copper-tungsten alloy plate used in the present invention is a composite material manufactured by, for example, sintering tungsten powder to form a porous body and infiltrating it with copper, and the mixing ratio of copper and tungsten is The thermal expansion coefficient or thermal conductivity can be changed arbitrarily. Therefore, it is preferable to use a copper-tungsten alloy plate whose coefficient of thermal expansion is at least close to that of the alumina film by adjusting the blending ratio of copper and tungsten. That is, since the coefficient of thermal expansion of alumina is around 73 x 10-7, the copper content in the copper-tungsten alloy should be adjusted to 5 to 5 to match this.
A preferable range is 30% by weight, especially 10 to 3% by weight.
It is preferable to set it as the range of 0fi amount %.
なお、銅−タングステン合金は市販品が提供されている
ため、これを購入使用することができる。Note that the copper-tungsten alloy is commercially available and can be purchased and used.
一方、本発明で使用されるアルミナフィルムは厚さ１０
〜１５０μｍのものであり、このような極薄アルミナフ
ィルムは、従来のアルミナ粉末法では製造不可能である
。このような極薄アルミナフィルムは、水酸化アルミニ
ウムのコロイド物Ｘを出発原料として製造することが好
ましく、例えば、アルコキシド加水分解法は好適な製造
方法の一つである。即ち、アルミニウムアルコキシドを
合成した後、これに水を加えて加水分解し、ベーマイト
を生成させる。更に、これに酸を添加して解膠させ、超
微粒子のコロイドを作製する６次いで、これに有機バイ
ンダーを加え、粘度調整し、成形乾燥した後、得られた
グリーンシートを焼成する。このような方法によって、
１０〜１５０μｍという掻く薄い、緻密なアルミナフィ
ルムを作ることができる。もちろん、本発明に係るアル
ミナフィルムの製造方法は上記アルコキシド加水分解法
に何ら限定されるものではなく、その他の方法、例えば
無機塩加水分解法でも製造できる。On the other hand, the alumina film used in the present invention has a thickness of 10
~150 μm, and such ultra-thin alumina films cannot be manufactured using conventional alumina powder methods. Such an ultra-thin alumina film is preferably manufactured using aluminum hydroxide colloid X as a starting material, and for example, an alkoxide hydrolysis method is one of the suitable manufacturing methods. That is, after synthesizing aluminum alkoxide, water is added to it and hydrolyzed to produce boehmite. Furthermore, an acid is added to this to peptize it to produce a colloid of ultrafine particles.6 Next, an organic binder is added to this to adjust the viscosity, and after shaping and drying, the obtained green sheet is fired. By such a method,
A thin and dense alumina film of 10 to 150 μm can be made. Of course, the method for producing an alumina film according to the present invention is not limited to the alkoxide hydrolysis method described above, and may also be produced by other methods, such as an inorganic salt hydrolysis method.
銅−タングステン合金板とアルミナフィルムとを貼り合
せて一体化する方法としては、特に制限はなく、銀ろう
付け、ハンダ付は等による接合法或いは有機樹脂等によ
る接着法を採用することができる。There are no particular limitations on the method of bonding and integrating the copper-tungsten alloy plate and the alumina film, and a joining method such as silver brazing or soldering, or an adhesive method using an organic resin or the like can be employed.
銀ろう付け、ハンダ付は等で接合する場合には、銅−タ
ングステン合金板及びアルミナフィルムの接合面側に、
銅、ニッケル、銀、金の接合用メタライズ層を予めめっ
ぎ或いは厚膜法で形成しておけば良い、また、樹脂で接
着する場合には、熱伝導性の良いシリコーン樹脂等を用
いて直接接着すれば良い。その他、熱伝導性グリースを
使用することもできる。When joining with silver brazing, soldering, etc., on the joining surface side of the copper-tungsten alloy plate and alumina film,
It is sufficient to form a metallized layer for joining copper, nickel, silver, and gold in advance by plating or a thick film method.Also, when bonding with resin, use a silicone resin etc. with good thermal conductivity. You can just glue it directly. In addition, thermally conductive grease can also be used.
厚さ１０〜１５０μｍの極薄アルミナフィルムは、熱抵
抗が小さく、また、銅−タングステン合金はアルミナと
熱膨張係数が近似しているため、銅−タングステン合金
板とアルミナフィルムとを一体化することにより熱衝撃
に強い高熱伝導性絶縁金属基板が提供される。特に、銅
−タングステン合金の銅含有量を５〜３０重量％とじた
場合には、熱膨張係数をアルミナに著しく近づけること
ができ、より一層優れた効果が奏される。Ultra-thin alumina film with a thickness of 10 to 150 μm has low thermal resistance, and copper-tungsten alloy has a thermal expansion coefficient similar to that of alumina, so it is possible to integrate the copper-tungsten alloy plate and alumina film. This provides a highly thermally conductive insulated metal substrate that is resistant to thermal shock. In particular, when the copper content of the copper-tungsten alloy is 5 to 30% by weight, the coefficient of thermal expansion can be made extremely close to that of alumina, resulting in even more excellent effects.
［実施例コ
以下に図面を参照して本発明の実施例について説明する
。[Embodiments] Examples of the present invention will be described below with reference to the drawings.
第１図〜第５図は本発明の高熱伝導性絶縁金属基板の実
施例を示す断面図である。1 to 5 are cross-sectional views showing embodiments of the highly thermally conductive insulated metal substrate of the present invention.
実施例１
第１図に示す本発明の高熱伝導性絶縁金属基板１を製造
した。Example 1 A highly thermally conductive insulated metal substrate 1 of the present invention shown in FIG. 1 was manufactured.
第１図において、アルミナフィルム２は、１００μｍの
厚みを有している。このアルミナフィルム２は、超微粒
子のベーマイトゾルを出発原料とするものであり、アル
コキシド加水分解法により作製されている。具体的には
、アルミニウムインゴットとアルコールとを反応させ、
アルミニウムアルコキシドを合成し、加水分解した後、
更に酸を添加して解膠し、ベーマイトゾルを生成させた
。これに有機バインダーを加え、スラリー化した後は、
ドクターブレードを通しキャスティングしながら成形、
乾燥してグリーンシートとした。その後、所定の形状に
切断して、焼成炉で焼成し、緻密なアルミナフィルムを
得ることができた。なお、アルミナ粒は微粒子からなっ
ているため、焼成体の厚みが薄くな）てもピンホールが
なく、表面の平滑性も非常に良いものであった。また、
アルミナフィルムの厚みも所望の厚みに制御できた。In FIG. 1, the alumina film 2 has a thickness of 100 μm. This alumina film 2 uses ultrafine boehmite sol as a starting material, and is produced by an alkoxide hydrolysis method. Specifically, an aluminum ingot and alcohol are reacted,
After synthesizing and hydrolyzing aluminum alkoxide,
Further, acid was added to peptize the mixture to produce a boehmite sol. After adding an organic binder to this and making it into a slurry,
Molding while casting through a doctor blade.
It was dried and made into a green sheet. Thereafter, it was cut into a predetermined shape and fired in a firing furnace, making it possible to obtain a dense alumina film. Furthermore, since the alumina grains are made up of fine particles, there were no pinholes even though the thickness of the fired body was small, and the surface smoothness was very good. Also,
The thickness of the alumina film could also be controlled to a desired thickness.
このようにして得られた１００μｍ厚みのアルミナフィ
ルム２にパラジウム処理して、無電解めっきにより銅メ
タライズ層３Ａを形成した。The alumina film 2 with a thickness of 100 μm thus obtained was treated with palladium, and a copper metallized layer 3A was formed by electroless plating.
次に、銅１０重量％、タンクゲステン９０重量％の組成
の銅−タングステン合金板４に電気めっきにより２〜３
μｍの銅メタライズ層３Ｂを形成した後、共晶ハンダ５
でハンダ付けを行ない、アルミナフィルム２と銅−タン
グステン合金板４とを一体化した。Next, 2 to 3
After forming the μm copper metallized layer 3B, the eutectic solder 5
Soldering was performed to integrate the alumina film 2 and the copper-tungsten alloy plate 4.
実施例２
′Ｍ２図に示す本発明の高熱伝導性絶縁金属基板ＩＡを
製造した。Example 2 A highly thermally conductive insulated metal substrate IA of the present invention shown in Figure M2 was manufactured.
第２図の高熱伝導性絶縁金属基板ＩＡは、実施例１と同
様にして得られた１０μｍ厚さのアルミナフィルム２Ａ
と、銅２０重量％、タングステン８０重量％の組成の２
ｍｍ厚さの銅−タングステン合金板４Ａとをシリコーン
樹脂６で接着し一体化したものである。The highly thermally conductive insulated metal substrate IA in FIG. 2 is an alumina film 2A with a thickness of 10 μm obtained in the same manner as in Example 1.
2 with a composition of 20% copper and 80% tungsten by weight.
A copper-tungsten alloy plate 4A having a thickness of mm is bonded and integrated with a silicone resin 6.
実施例３
第３図に示す本発明の高熱伝導性絶縁金属基上１Ｂを製
造した。Example 3 A highly thermally conductive insulating metal substrate 1B of the present invention shown in FIG. 3 was manufactured.
第３図の高熱伝導性絶縁金属基板ＩＢは、実方例１と同
様にして得られた１５０μｍ厚さのアノ１ミナフイルム
２Ｂに、無電解めっきにより２〜４μｍ厚みのニッケル
メタライズ層７Ａを形成したものと、銅２２．５重量％
、タングステ〉７７．５重量％の組成の銅−タングステ
ン合金相４Ｂに同様にニッケルメタライズ層７Ｂを形成
したものとを銀ろう８でろう付けし一体化したものであ
る。The highly thermally conductive insulated metal substrate IB shown in FIG. 3 is made by forming a nickel metallized layer 7A with a thickness of 2 to 4 μm by electroless plating on a 150 μm thick Ano 1 Mina film 2B obtained in the same manner as Example 1. and 22.5% by weight of copper
A copper-tungsten alloy phase 4B having a composition of 77.5% by weight of tungsten and a nickel metallized layer 7B formed thereon are brazed together with a silver solder 8.
実施例４
第４図に示す本発明の高熱伝導性絶縁金属基板ＩＣを製
造した。Example 4 A highly thermally conductive insulated metal substrate IC of the present invention shown in FIG. 4 was manufactured.
第４図の高熱伝導性絶縁金属基板ＩＣは、実施例１と同
様にして得られた１００μｍｙＸさのアルミナフィルム
２Ｃに無電解めっきにより銅メタライズ層３Ａを形成し
たものと、銅２５重量％、タングステン７５重量％の組
成の銅−タングステン合金板４Ｃに同様に銅メタライズ
層３Ｂを形成したものとを、銅面を介して共晶ハンダ５
でハンダ付けしたものである。The highly thermally conductive insulated metal substrate IC shown in FIG. 4 is made of an alumina film 2C with a thickness of 100 μmy A copper-tungsten alloy plate 4C with a composition of 75% by weight and a copper metallized layer 3B formed in the same manner is bonded with eutectic solder 5 through the copper surface.
It is soldered.
実施例５
第５図に示す本発明の高熱伝導性絶縁金属基板ＩＤを製
造した。Example 5 A highly thermally conductive insulated metal substrate ID of the present invention shown in FIG. 5 was manufactured.
第５図の高熱伝導性絶縁金属基板ＩＤは、実施例１と同
様にして得られた５０μｍ厚さのアルミナフィルム２Ｄ
に、銅導体パターン９と銅メタライズ層３Ａとを厚膜法
で形成したものと、銅３０重量％、タングステン７０重
量％の組成の銅−タングステン合金板４Ｄに無電解めっ
ぎにより銅メタライズ層３Ｂを形成したものとを、共晶
ハンダ５でハンダ付けして一体化したものである。The highly thermally conductive insulated metal substrate ID in FIG. 5 is a 50 μm thick alumina film 2D obtained in the same manner as in Example 1.
A copper conductor pattern 9 and a copper metallized layer 3A are formed by a thick film method, and a copper metallized layer is formed by electroless plating on a copper-tungsten alloy plate 4D having a composition of 30% by weight of copper and 70% by weight of tungsten. 3B are integrated by soldering with eutectic solder 5.
上記実施例１〜５で製造した高熱伝導性絶縁金属基板１
、ＩＡ、ＩＢ、ＩＣ，ＩＤについて、それぞれ、温度サ
イクル及びサーマルショック等の熱衝撃試験を行ない、
また、熱抵抗等を調べた結果、いずれも、接合部分のメ
タライズの剥れ、アルミナのクラックや破損がなく、ま
た、熱抵抗も従来のものよりも低く、高性能、高信頼性
のものであることが確認された。High thermal conductivity insulated metal substrate 1 manufactured in Examples 1 to 5 above
, IA, IB, IC, and ID were subjected to thermal shock tests such as temperature cycling and thermal shock, respectively.
In addition, as a result of examining the thermal resistance, etc., it was found that there was no peeling of the metallization at the joints, no cracking or damage of the alumina, and the thermal resistance was lower than that of conventional products, resulting in high performance and high reliability. It was confirmed that there is.
［発明の効果］
以上詳述した通り、請求項（１）の高熱伝導性絶縁金属
基板によれば、熱衝撃に強く、しかも熱抵抗の小さい、
高性能、高信頼性かつ低コストの高熱伝導性絶縁金属基
板が提供される。[Effects of the Invention] As detailed above, the highly thermally conductive insulated metal substrate of claim (1) is resistant to thermal shock and has low thermal resistance.
A highly thermally conductive insulated metal substrate with high performance, high reliability, and low cost is provided.
特に、請求項（２）の高熱伝導性絶縁金属基板によれば
、より一層優れた効果が奏される。In particular, the highly thermally conductive insulated metal substrate of claim (2) provides even more excellent effects.
第１図、第２図、第３図、第４図及び第５図は本発明の
高熱伝導性絶縁金属基板の実施例を示す断面図、第６図
及び′ｔＳ７図は従来例を示す断面図である。
１、ＩＡ、ＩＢ、ＩＣ，ＩＤ
・・・高熱伝導性絶縁金属基板、
２．２Ａ、２Ｂ、２Ｃ，２Ｄ
・・・アルミナフィルム、
４ 。
４Ａ。
４Ｂ。
４Ｃ。
Ｄ
・・・銅−タングステン合金板。1, 2, 3, 4, and 5 are cross-sectional views showing embodiments of the highly thermally conductive insulated metal substrate of the present invention, and FIG. 6 and 'tS7 are cross-sectional views showing conventional examples. It is a diagram. 1, IA, IB, IC, ID...High thermal conductivity insulated metal substrate, 2.2A, 2B, 2C, 2D...Alumina film, 4. 4A. 4B. 4C. D...Copper-tungsten alloy plate.
Claims (2)
ｍのアルミナフィルムとを貼り合せてなることを特徴と
する高熱伝導性絶縁金属基板。(1) Copper-tungsten alloy plate with a thickness of 10 to 150μ
A highly thermally conductive insulated metal substrate characterized by being laminated with an alumina film of m.
含有してなることを特徴とする特許請求の範囲第１項記
載の高熱伝導性絶縁金属基板。(2) The highly thermally conductive insulated metal substrate according to claim 1, wherein the copper-tungsten alloy plate contains 5 to 30% by weight of copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7837690A JPH03277543A (en) | 1990-03-27 | 1990-03-27 | Pyroconductive insulating metallic base plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7837690A JPH03277543A (en) | 1990-03-27 | 1990-03-27 | Pyroconductive insulating metallic base plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03277543A true JPH03277543A (en) | 1991-12-09 |
Family
ID=13660300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7837690A Pending JPH03277543A (en) | 1990-03-27 | 1990-03-27 | Pyroconductive insulating metallic base plate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03277543A (en) |
-
1990
- 1990-03-27 JP JP7837690A patent/JPH03277543A/en active Pending
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