JPH0328770U - - Google Patents
Info
- Publication number
- JPH0328770U JPH0328770U JP8929189U JP8929189U JPH0328770U JP H0328770 U JPH0328770 U JP H0328770U JP 8929189 U JP8929189 U JP 8929189U JP 8929189 U JP8929189 U JP 8929189U JP H0328770 U JPH0328770 U JP H0328770U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- confining layer
- current confining
- laser device
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000005253 cladding Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Description
第１図は本考案に係る半導体レーザー装置の実
施例を示す図で、第１図は要部断面図、第２図は
従来の半導体レーザー装置を示す要部断面図であ
る。 １１……電流狭さく層、１２……Ｐ型キヤツプ
層、１３……Ｐ型クラツド層、１４……活性層、
１５……ｎ型クラツド層、１６……電極、１７…
…基板。
施例を示す図で、第１図は要部断面図、第２図は
従来の半導体レーザー装置を示す要部断面図であ
る。 １１……電流狭さく層、１２……Ｐ型キヤツプ
層、１３……Ｐ型クラツド層、１４……活性層、
１５……ｎ型クラツド層、１６……電極、１７…
…基板。
Claims (1)
- 半導体レーザー素子表面に電流狭さく層を形成
し、該電流狭さく層の一部が取り除かれた構成の
半導体レーザー装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8929189U JPH0328770U (ja) | 1989-07-28 | 1989-07-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8929189U JPH0328770U (ja) | 1989-07-28 | 1989-07-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0328770U true JPH0328770U (ja) | 1991-03-22 |
Family
ID=31638873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8929189U Pending JPH0328770U (ja) | 1989-07-28 | 1989-07-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0328770U (ja) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5735068B2 (ja) * | 1978-03-15 | 1982-07-27 | ||
| JPS5931086A (ja) * | 1982-08-14 | 1984-02-18 | Nippon Telegr & Teleph Corp <Ntt> | 電流狭窄型半導体レ−ザ |
-
1989
- 1989-07-28 JP JP8929189U patent/JPH0328770U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5735068B2 (ja) * | 1978-03-15 | 1982-07-27 | ||
| JPS5931086A (ja) * | 1982-08-14 | 1984-02-18 | Nippon Telegr & Teleph Corp <Ntt> | 電流狭窄型半導体レ−ザ |