JPH0328066B2 - - Google Patents

Info

Publication number
JPH0328066B2
JPH0328066B2 JP60286747A JP28674785A JPH0328066B2 JP H0328066 B2 JPH0328066 B2 JP H0328066B2 JP 60286747 A JP60286747 A JP 60286747A JP 28674785 A JP28674785 A JP 28674785A JP H0328066 B2 JPH0328066 B2 JP H0328066B2
Authority
JP
Japan
Prior art keywords
indium
layer
crystal semiconductor
mixed crystal
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60286747A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62145779A (ja
Inventor
Goro Sasaki
Hideki Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP60286747A priority Critical patent/JPS62145779A/ja
Priority to US06/939,716 priority patent/US4764796A/en
Priority to DE8686117164T priority patent/DE3688318T2/de
Priority to EP86117164A priority patent/EP0228624B1/en
Priority to KR1019860010809A priority patent/KR900000073B1/ko
Priority to CA000525579A priority patent/CA1247755A/en
Publication of JPS62145779A publication Critical patent/JPS62145779A/ja
Publication of JPH0328066B2 publication Critical patent/JPH0328066B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP60286747A 1985-12-19 1985-12-19 電界効果トランジスタ Granted JPS62145779A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP60286747A JPS62145779A (ja) 1985-12-19 1985-12-19 電界効果トランジスタ
US06/939,716 US4764796A (en) 1985-12-19 1986-12-09 Heterojunction field effect transistor with two-dimensional electron layer
DE8686117164T DE3688318T2 (de) 1985-12-19 1986-12-09 Feldeffekttransistor.
EP86117164A EP0228624B1 (en) 1985-12-19 1986-12-09 field effect transistor
KR1019860010809A KR900000073B1 (ko) 1985-12-19 1986-12-17 전계효과트랜지스터
CA000525579A CA1247755A (en) 1985-12-19 1986-12-17 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60286747A JPS62145779A (ja) 1985-12-19 1985-12-19 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS62145779A JPS62145779A (ja) 1987-06-29
JPH0328066B2 true JPH0328066B2 (cs) 1991-04-17

Family

ID=17708507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60286747A Granted JPS62145779A (ja) 1985-12-19 1985-12-19 電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS62145779A (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2672180B2 (ja) * 1990-05-23 1997-11-05 シャープ株式会社 ▲ｉｉｉ▼―ｖ族化合物半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2492167A1 (fr) * 1980-10-14 1982-04-16 Thomson Csf Transistor a effet de champ a frequence de coupure elevee

Also Published As

Publication number Publication date
JPS62145779A (ja) 1987-06-29

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term