JPH03280486A - Hybrid integrated circuit element - Google Patents
Hybrid integrated circuit elementInfo
- Publication number
- JPH03280486A JPH03280486A JP2080292A JP8029290A JPH03280486A JP H03280486 A JPH03280486 A JP H03280486A JP 2080292 A JP2080292 A JP 2080292A JP 8029290 A JP8029290 A JP 8029290A JP H03280486 A JPH03280486 A JP H03280486A
- Authority
- JP
- Japan
- Prior art keywords
- thick film
- integrated circuit
- metal plate
- board
- hybrid integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims description 59
- 230000017525 heat dissipation Effects 0.000 claims description 24
- 238000000034 method Methods 0.000 abstract description 16
- 239000000919 ceramic Substances 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 239000000853 adhesive Substances 0.000 abstract description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052802 copper Inorganic materials 0.000 abstract description 2
- 239000010949 copper Substances 0.000 abstract description 2
- 229910000881 Cu alloy Inorganic materials 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 23
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
- 229940112669 cuprous oxide Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
Landscapes
- Insulated Metal Substrates For Printed Circuits (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Structure Of Printed Boards (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的コ
（産業上の利用分野）
本発明は、混成集積回路素子に係わり特に、高出力に伴
って必要とされる放熱構造に好適する。DETAILED DESCRIPTION OF THE INVENTION [Objective of the Invention (Industrial Application Field) The present invention relates to a hybrid integrated circuit element and is particularly suitable for a heat dissipation structure required for high output.
（従来の技術）
受動素子、能動素子または回路用部品の中から選定した
一種もしくは複数種を半導体基板にモノリシック（Ｍｏ
ｎｏｌｙｔｈｉｃ）に造込む集積回路素子は、最近のＤ
−ＲＡＭに対表されるように集積度が益々増大する傾向
にある。これに対いして、半導体基板にモノリシックに
形成できないし成分などをハイブリッド（Ｈｙｂｒｉｄ
）方式により形成する混成集積回路素子でもバッキング
デンシティ （Ｐａｃｋｉｎｇ Ｄｅｎｓ ｉ ｔｙ
）を改良した製品が開発されその用途の増大は著しいも
のがある。(Prior art) One or more types selected from passive elements, active elements, or circuit components are monolithically mounted on a semiconductor substrate.
integrated circuit elements built into
- There is a trend towards increasing integration density, as shown by RAM. On the other hand, it cannot be formed monolithically on a semiconductor substrate, and the components cannot be formed in a hybrid manner.
Even in hybrid integrated circuit devices formed using the ) method, packing density
) have been developed, and their uses are increasing significantly.
このように集積度の増大の伴う混成集積回路素子の課題
に熱放散対策があり、その解決策の一つとしてヒートシ
ンク（Ｈｅａｔ ５ｉｎｋ）が利用されている。その
要部を示す第１図の断面図により説明すると、例えばア
ルミナセラミックス（Ａｌｕｍｉｎａ Ｃｅｒａｍｉ
ｃｓ）基板１の片面に電子回路に必要な部品２・・・を
実装しており、平坦な他面にヒートシンク即ち放熱用金
属板３を接着剤層４を介して一体としている。As described above, heat dissipation measures are a problem for hybrid integrated circuit elements with increasing degree of integration, and heat sinks (Heat 5 ink) are used as one of the solutions. For example, alumina ceramics (Alumina Cerami
cs) Components 2 necessary for an electronic circuit are mounted on one side of the substrate 1, and a heat sink, that is, a metal plate 3 for heat dissipation is integrated on the other flat side with an adhesive layer 4 interposed therebetween.
ところで、アルミナセラミックス基板１などにハイブリ
ッド方式で形成する部品２・・・には、集積回路素子、
個別半導体素子、ときにはＬ成分などの他にいわゆるト
リミング（Ｔｒｉｍｍｉｎｇ）法により所定値に調整す
る抵抗も含まれており、このような各種部品を実装した
基板を本発明では厚膜基板とする。一方、混成集積回路
素子の集積度を向上するために厚膜基板の両面に各種部
品を実装する方式（第２図参照）も多用されている。By the way, the components 2 formed on the alumina ceramic substrate 1 etc. by the hybrid method include integrated circuit elements,
Individual semiconductor elements, sometimes including resistors that are adjusted to predetermined values by a so-called trimming method, in addition to the L component, and the substrate on which these various components are mounted is referred to as a thick film substrate in the present invention. On the other hand, in order to improve the degree of integration of hybrid integrated circuit elements, a method of mounting various components on both sides of a thick film substrate (see FIG. 2) is also frequently used.
この場合は、アルミナセラミックス基板１の露出面即ち
放熱用金属板５を設置しない表面に半導体素子などを配
置し、他面には、トリミングする抵抗及び配線層を設置
し、両面の各部品の電気的接続には、アルミナセラミッ
クス基板１の厚さ方向を貫通して形成するスルーホール
（Ｔｈｒｏｕｇｈ Ｈｏ１ｅ）６を利用する。In this case, semiconductor elements and the like are placed on the exposed surface of the alumina ceramics substrate 1, that is, the surface on which the metal plate 5 for heat dissipation is not installed, and the resistor and wiring layer to be trimmed are placed on the other side, and the electrical connections of each component on both sides are placed. For the physical connection, a through hole 6 formed to penetrate the alumina ceramic substrate 1 in the thickness direction is used.
ところで、アルミナセラミックス基板１の両面にいわゆ
るスクリーン（Ｓｃｒｅｅｎ）印刷法により形成する配
線層は、薄いガラス（Ｇｌａｓｓ）層を被覆して保護し
ておりまた、他面に取付ける抵抗にも薄いガラス層によ
り保護している。スルーホール６壁面を構成するアルミ
ナセラミックス基板１には、例えばメツキ法により配線
層を形成して、両面に設置する配線層と電気的に接続し
て所定の電子回路の形成に備えている。このスルーホー
ル６に被着する配線層にも保護ガラス層を被覆して絶縁
性を確保しているし、放熱用金属板５は接着剤層４によ
りアルミナセラミックス基板１と一体にするが、両者の
固定を確実にするために圧着工程を最後に行うのが一般
的である。By the way, the wiring layers formed on both sides of the alumina ceramics substrate 1 by the so-called screen printing method are protected by covering them with a thin glass layer, and the resistors attached to the other side are also covered with a thin glass layer. Protecting. A wiring layer is formed on the alumina ceramic substrate 1 constituting the wall surface of the through hole 6 by, for example, a plating method, and is electrically connected to the wiring layers installed on both surfaces in preparation for forming a predetermined electronic circuit. The wiring layer that adheres to this through hole 6 is also coated with a protective glass layer to ensure insulation, and the heat dissipation metal plate 5 is integrated with the alumina ceramic substrate 1 by an adhesive layer 4, but both A crimping process is generally performed last to ensure secure fixation.
（発明が解決しようとする課題）
厚膜基板の両面を利用する型の混成集積回路素子では、
放熱用金属板５の平坦な全面を放熱に利用することがで
きない。と言うのは、スルーホール６の角部が厚膜基板
１表面及び他面との交わる付近に形成した配線層を覆う
ガラス層が圧着工程により剥離したり、薄くなって絶縁
性が損なわれる恐れを解消するのに、この付近に対応す
る放熱用金属板５に凹部７を設置する（第３図参照）。(Problem to be solved by the invention) In a type of hybrid integrated circuit device that uses both sides of a thick film substrate,
The flat entire surface of the metal plate 5 for heat radiation cannot be used for heat radiation. This is because there is a risk that the glass layer covering the wiring layer formed near the intersection of the corner of the through hole 6 with the surface of the thick film substrate 1 and the other surface may peel off or become thinner during the pressure bonding process, resulting in loss of insulation properties. In order to solve this problem, a recess 7 is installed in the heat dissipation metal plate 5 corresponding to this area (see FIG. 3).
このために厚膜基板１の両面を利用する型では、放熱効
率が悪いと共に製造単価が増大する難点の外に、製造工
程時に両者の位置合せが必要となり、工数が増題する欠
点が生ずる。しかも、厚膜基板１の他面に設置した抵抗
体に大電流を流して発熱が起こった場合には、放熱性が
損なわれる難点がある。For this reason, the type that utilizes both sides of the thick film substrate 1 has the drawbacks of poor heat dissipation efficiency and increased manufacturing cost, as well as the need for alignment between the two during the manufacturing process, which increases the number of man-hours. Furthermore, if a large current is passed through the resistor placed on the other surface of the thick film substrate 1 and heat is generated, there is a problem in that the heat dissipation performance is impaired.
本発明は、このような事情により成されたもので特に、
厚膜基板の両面に電子回路用部品を取付ける混成集積回
路素子の放熱効率を改善することを目的とするものであ
る。The present invention was made under these circumstances, and in particular,
The purpose of this invention is to improve the heat dissipation efficiency of a hybrid integrated circuit device in which electronic circuit components are mounted on both sides of a thick film substrate.
［発明の構成］
（課題を解決するための手段）
放熱用金属板と、放熱用金属板に対向して配置する厚膜
基板と、厚膜基板の両面に設置する回路パターンと、前
記厚膜基板の厚さ方向を貫通して設置するスルーホール
と、前記回路パターンを接続し、前記スノーホールを介
して形成する配線層、前記スノーホールに形成する配線
層を保護する絶縁層と、前記放熱用金属板及び厚膜基板
間に一体には位置する熱伝導・絶縁性基板と、これらを
覆って前記放熱用金属板に固着する金属容器に本発明に
係わる混成集積回路素子の特徴がある。[Structure of the Invention] (Means for Solving the Problems) A heat dissipation metal plate, a thick film substrate disposed opposite to the heat dissipation metal plate, a circuit pattern installed on both sides of the thick film substrate, and the thick film a through hole installed through the thickness direction of the substrate; a wiring layer connecting the circuit pattern and forming through the snow hole; an insulating layer protecting the wiring layer formed in the snow hole; and the heat dissipation layer. The hybrid integrated circuit device according to the present invention is characterized by a heat conductive/insulating substrate integrally located between the metal plate for heat dissipation and the thick film substrate, and a metal container covering these and fixed to the metal plate for heat dissipation.
（作用）
本発明に係わる混成集積回路素子は、例えば車輌用とし
て利用する場合もあり、当然コンバク） （Ｃｏｍｐａ
ｃｔ）なものが要求されしかも、所定の電子回路には動
作時に発熱量が大きく、大電流を附勢する抵抗や例えば
ジャイアントトランジスタ（ＧｉａｎｔＴｒａｎｓｉｓ
ｔｅｒ以後Ｇ−Ｔｒと記載する）を設置しなければなら
ない時もある。従来技術でのＧ−Ｔｒなどの設置方法は
、厚膜基板と別の基板を利用するのが一般的であり、必
要な面積が増え車輌用などのように決められた容積また
は面積内に設置するのに不都合となる。(Function) The hybrid integrated circuit device according to the present invention may be used, for example, in a vehicle, and naturally
ct), and a given electronic circuit generates a large amount of heat during operation, and requires a resistor that applies a large current or, for example, a giant transistor (Giant Transistor).
There are times when it is necessary to install a ter (hereinafter referred to as G-Tr). The conventional method of installing G-Tr etc. generally uses a thick film substrate and another substrate, which increases the required area and requires installation within a fixed volume or area such as for vehicles. It is inconvenient to do so.
更に、本発明に係わる混成集積回路素子では動作特発熱
する抵抗が必要であり、厚膜基板の裏面即ち必要な回路
部品をマウント（Ｍｏｕｎｔ）する表面の反対側に設置
する。このように限られた容積または面積内に取付ける
必要がある混成集積回路素子では、集積度向上の観点か
ら厚膜基板に必要な回路部品を設置させざるを得ないの
で、特別な放熱及び絶縁対策として厚膜基板と放熱用金
属板間に熱伝導・絶縁性基板を配置する手法を採用して
いる。更に、車輌用などのような混成集積回路素子は、
金属容器により保護して厳しい環境例えば−４０℃〜１
５０°Ｃに使用に耐えるようにされている。Furthermore, the hybrid integrated circuit device according to the present invention requires a resistor that generates heat during operation, and is installed on the back surface of the thick film substrate, that is, on the opposite side of the surface on which necessary circuit components are mounted. For hybrid integrated circuit devices that need to be installed within such a limited volume or area, the necessary circuit components must be installed on a thick film board from the perspective of increasing the degree of integration, so special heat dissipation and insulation measures are required. As a method, a method is adopted in which a heat conductive/insulating substrate is placed between a thick film substrate and a metal plate for heat dissipation. Furthermore, hybrid integrated circuit devices such as those for vehicles, etc.
Protected by metal container in harsh environments e.g. -40℃~1
It is designed to withstand use at 50°C.
（実施例）
本発明に係わる実施例を第４図乃至第５図を参照して説
明する。即ち、厚さ０．８ｍｍ程度のセラミックからな
る厚膜基板１０の両面には、スクリーン印刷法により導
電性金属からなる配線層（図示せず）を設け、その−面
に電子回路に必要な部品を取付ける。更に厚膜基板１０
の厚さ方向を貫通するスルーホール１１・・・を設置す
ると共に、配線層を例えばメツキ法により被覆して両表
面に形成した配線層の導通を図る。このような処理を終
えた厚膜基板１０の裏面即ち後述の半導体素子などを設
置しない面には、動作時に発熱を生じる抵抗１２を配線
層に接続して形成する。従来技術にあっては、ガラス層
などの絶縁物層で抵抗１２を被覆保護しているが、本発
明では、この抵抗層１２には塗布していない。更に１．
電子回路用部品として樹脂封止型集積回路素子、Ｇ−Ｔ
ｒなどの外にＬ成分や場合によってはコイル（Ｃｏｉｌ
）をいわゆる表面実装方式により抵抗１２を設置しない
地表面に設置する。Ｇ−Ｔｒの設置に当たっては、セラ
ミックス製厚膜基板１０に代えて、窒化アルミニュウム
製基板に亜酸化銅などを介する方法や、アルミナセラミ
ックス基板１０にモリブデン（Ｍｏｌｙｂｄｅｎｕｍ）
製板体（図示せず）を介して設置する方法が採られてい
る。窒化アルミニュウム製基板を厚膜基板１０に接着剤
層を利用して固着する。このように回路部品を取付けた
厚膜基板１０には、熱伝導・絶縁性基板例えばセラミッ
クス基板１３及び例えば銅または調合金製の放熱用金属
板１４を導電性接着剤層１５５．１５により一体に固着
して混成集積回路素子の大部分を形成する。第４図に示
したように３層からなる積層体の表面部分を構成する厚
膜基板１ｏの端部には、金属容器１６をハーメチックシ
ール（Ｈａｒｍｅｔｉｃ ５ｅａｌ）により気密に固
着して車輌用混成集積回路素子を完成する。(Example) An example according to the present invention will be described with reference to FIGS. 4 and 5. That is, a wiring layer (not shown) made of conductive metal is provided on both sides of a thick film substrate 10 made of ceramic with a thickness of about 0.8 mm by a screen printing method, and components necessary for an electronic circuit are placed on the negative side. Install. Furthermore, a thick film substrate 10
Through-holes 11 are installed to penetrate through the thickness direction of the wiring layer, and the wiring layer is coated by, for example, a plating method to ensure electrical continuity between the wiring layers formed on both surfaces. After such processing, a resistor 12 that generates heat during operation is connected to a wiring layer and formed on the back surface of the thick film substrate 10, that is, on the surface on which semiconductor elements, which will be described later, are not installed. In the prior art, the resistor 12 is coated and protected with an insulating layer such as a glass layer, but in the present invention, this resistive layer 12 is not coated. Furthermore 1.
Resin-sealed integrated circuit elements, G-T as electronic circuit components
In addition to r etc., L component and in some cases coil
) is installed on the ground surface where the resistor 12 is not installed using a so-called surface mounting method. When installing the G-Tr, instead of the ceramic thick film substrate 10, a method such as using cuprous oxide on an aluminum nitride substrate, or using molybdenum on the alumina ceramic substrate 10 is possible.
A method of installing via a board (not shown) is adopted. An aluminum nitride substrate is fixed to a thick film substrate 10 using an adhesive layer. On the thick film substrate 10 on which the circuit components are mounted in this way, a heat conductive/insulating substrate 13, such as a ceramic substrate 13, and a heat dissipating metal plate 14 made of, for example, copper or prepared alloy are integrated with a conductive adhesive layer 155.15. It is firmly attached to form the bulk of the hybrid integrated circuit element. As shown in FIG. 4, a metal container 16 is hermetically fixed to the end of the thick film substrate 1o that constitutes the surface portion of the laminate consisting of three layers using a hermetic seal (Harmetic 5eal) to form a hybrid assembly for vehicles. Complete the circuit element.
第３図では、金属容器１６取付前の状態を示した斜視図
である。FIG. 3 is a perspective view showing the state before the metal container 16 is attached.
厚膜基板１０と放熱用金属板１４は、いずれも厚さが上
記のように０．８ｍｍから０．６３５ｍｍ程度であり、
長さは３〜５ｍｍとし、金属容器１６は、はぼ４０Φ位
の大きさが普通である。The thick film substrate 10 and the heat dissipation metal plate 14 both have a thickness of about 0.8 mm to 0.635 mm as described above,
The length is 3 to 5 mm, and the metal container 16 is usually about 40 Φ in size.
［発明の効果コ
本発明では、両面印刷された厚膜基板からの放熱が、片
面印刷された基板と同様な効率で行なえる。また、基板
とヒートシンク用金属基板間に挿入される熱伝導・絶縁
性基板は、絶縁性及び放熱性に優れているので、金属基
板側の厚膜基板は、保護材料で覆う必要がなくなるので
、製造単価が安くなる利点があるばかりではなく更に、
この厚膜基板側に設置する抵抗については、その放熱が
確保できる。更にまた、混成集積回路素子の製造につい
ても厚膜基板、熱伝導・絶縁性基板更に金属基板を接着
剤により一体とするので、特別な位置合せが要らない利
点もあり、製造工数削減ひいては製造単価の低減をもた
らすものである。[Effects of the Invention] According to the present invention, heat can be dissipated from a thick film substrate printed on both sides with the same efficiency as a substrate printed on one side. In addition, the heat conductive/insulating substrate inserted between the substrate and the metal substrate for the heat sink has excellent insulation and heat dissipation properties, so there is no need to cover the thick film substrate on the metal substrate side with a protective material. Not only does it have the advantage of lower manufacturing costs, but also,
Heat dissipation can be ensured for the resistor installed on the thick film substrate side. Furthermore, in the production of hybrid integrated circuit elements, thick film substrates, thermally conductive/insulating substrates, and metal substrates are integrated with adhesive, so there is no need for special alignment, which reduces manufacturing man-hours and reduces manufacturing costs. This results in a reduction in
第１図汝至第３図は、従来の混成集積回路素子の断面図
、第４図は、本発明に係わる混成集積回路素子の概略を
示す斜視図、第５図は、本発明に係わる混成集積回路素
子の断面図である。
１．１０：セラミック基板、厚膜基板、２：部品、 ３
．１４：放熱用金属板、４．１５：接着剤、 ６．１１
ニスルーホール、７：凹部分、 ５．１２：抵抗、
１３：熱伝導・絶縁性基板、 １６：金属容器。FIG. 1 is a cross-sectional view of a conventional hybrid integrated circuit device, FIG. 4 is a perspective view schematically showing a hybrid integrated circuit device according to the present invention, and FIG. 5 is a cross-sectional view of a conventional hybrid integrated circuit device. FIG. 2 is a cross-sectional view of an integrated circuit element. 1.10: Ceramic substrate, thick film substrate, 2: Parts, 3
．． 14: Metal plate for heat dissipation, 4.15: Adhesive, 6.11
Varnish through hole, 7: recessed part, 5.12: resistor, 13: heat conductive/insulating substrate, 16: metal container.
Claims (1)
基板と、前記厚膜基板の両面に設置する回路パターンと
、前記厚膜基板の厚さ方向を貫通して設置するスルーホ
ールと、前記回路パターンを接続し前記スルーホールを
介して形成する配線層と、前記放熱用金属板及び厚膜基
板間に一体配置する熱伝導・絶縁性基板と、これらを覆
って前記放熱用金属板に固着する金属容器を具備するこ
とを特徴とする混成集積回路素子。A metal plate for heat dissipation, a thick film substrate disposed opposite to the metal plate for heat dissipation, a circuit pattern installed on both sides of the thick film substrate, and a through hole installed to penetrate the thick film substrate in the thickness direction. a wiring layer that connects the circuit pattern and is formed through the through hole; a heat conductive/insulating substrate that is integrally arranged between the heat dissipation metal plate and the thick film substrate; and a heat dissipation metal plate that covers these. A hybrid integrated circuit element comprising a metal container fixed to a plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2080292A JP2744108B2 (en) | 1990-03-28 | 1990-03-28 | Hybrid integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2080292A JP2744108B2 (en) | 1990-03-28 | 1990-03-28 | Hybrid integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03280486A true JPH03280486A (en) | 1991-12-11 |
| JP2744108B2 JP2744108B2 (en) | 1998-04-28 |
Family
ID=13714197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2080292A Expired - Fee Related JP2744108B2 (en) | 1990-03-28 | 1990-03-28 | Hybrid integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2744108B2 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4726877U (en) * | 1971-04-16 | 1972-11-27 | ||
| JPS5827225U (en) * | 1981-08-12 | 1983-02-22 | 大盛工業株式会社 | Powder quantitative feeding device |
| JPS60106736A (en) * | 1983-08-12 | 1985-06-12 | ヴオルフガングクラムブロツク | Device for adjusting quantity of bulk cargo |
| JPS6256528U (en) * | 1985-09-27 | 1987-04-08 |
-
1990
- 1990-03-28 JP JP2080292A patent/JP2744108B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4726877U (en) * | 1971-04-16 | 1972-11-27 | ||
| JPS5827225U (en) * | 1981-08-12 | 1983-02-22 | 大盛工業株式会社 | Powder quantitative feeding device |
| JPS60106736A (en) * | 1983-08-12 | 1985-06-12 | ヴオルフガングクラムブロツク | Device for adjusting quantity of bulk cargo |
| JPS6256528U (en) * | 1985-09-27 | 1987-04-08 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2744108B2 (en) | 1998-04-28 |
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