JPH0324075B2 - - Google Patents
Info
- Publication number
- JPH0324075B2 JPH0324075B2 JP61049770A JP4977086A JPH0324075B2 JP H0324075 B2 JPH0324075 B2 JP H0324075B2 JP 61049770 A JP61049770 A JP 61049770A JP 4977086 A JP4977086 A JP 4977086A JP H0324075 B2 JPH0324075 B2 JP H0324075B2
- Authority
- JP
- Japan
- Prior art keywords
- hall
- voltage
- magnetic sensor
- hall element
- hall elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 10
- 230000000694 effects Effects 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000001514 detection method Methods 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
Landscapes
- Hall/Mr Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61049770A JPS62208682A (ja) | 1986-03-07 | 1986-03-07 | 磁気センサ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61049770A JPS62208682A (ja) | 1986-03-07 | 1986-03-07 | 磁気センサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62208682A JPS62208682A (ja) | 1987-09-12 |
| JPH0324075B2 true JPH0324075B2 (de) | 1991-04-02 |
Family
ID=12840403
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61049770A Granted JPS62208682A (ja) | 1986-03-07 | 1986-03-07 | 磁気センサ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62208682A (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62206889A (ja) * | 1986-03-07 | 1987-09-11 | Seiko Instr & Electronics Ltd | 磁気センサ |
| JPH02192781A (ja) * | 1989-01-20 | 1990-07-30 | Mitsubishi Electric Corp | ホール素子および磁気センサシステム |
| JP2014006061A (ja) * | 2012-06-21 | 2014-01-16 | Asahi Kasei Electronics Co Ltd | センサ駆動回路 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5357983A (en) * | 1976-11-05 | 1978-05-25 | Toshiba Corp | Hall effect device |
| JPS54143085A (en) * | 1978-04-28 | 1979-11-07 | Yokogawa Hokushin Electric Corp | Hall element |
| JPS5795686A (en) * | 1980-12-05 | 1982-06-14 | Toshiba Corp | Resin sealed type semiconductor magnetic sensitive device |
-
1986
- 1986-03-07 JP JP61049770A patent/JPS62208682A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5357983A (en) * | 1976-11-05 | 1978-05-25 | Toshiba Corp | Hall effect device |
| JPS54143085A (en) * | 1978-04-28 | 1979-11-07 | Yokogawa Hokushin Electric Corp | Hall element |
| JPS5795686A (en) * | 1980-12-05 | 1982-06-14 | Toshiba Corp | Resin sealed type semiconductor magnetic sensitive device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62208682A (ja) | 1987-09-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4875011A (en) | Magnetic sensor using integrated silicon Hall effect elements formed on the (100) plane of a silicon substrate | |
| US4739264A (en) | Magnetic sensor using a plurality of Hall effect devices | |
| US4125789A (en) | Biasing and scaling circuit for transducers | |
| US5191233A (en) | Flip-flop type level-shift circuit | |
| US4573020A (en) | Fully differential operational amplifier with D.C. common-mode feedback | |
| JPS6096021A (ja) | トリガ回路 | |
| GB2048598A (en) | Cmos class a amplifier | |
| JPH0658614B2 (ja) | Ｃｍｏｓ分圧回路 | |
| US5132560A (en) | Voltage comparator with automatic output-level adjustment | |
| US5210503A (en) | Amplitude limiting amplifier circuit | |
| JPH0324075B2 (de) | ||
| JPH0823238A (ja) | バッファ回路及び画像表示装置 | |
| JPS62208683A (ja) | 磁気センサ | |
| US5262665A (en) | Semiconductor device with current sensing function | |
| US4947056A (en) | MOSFET for producing a constant voltage | |
| JP2651246B2 (ja) | Ｃｍｏｓ入力バッファ回路 | |
| JPH0119303B2 (de) | ||
| US4404477A (en) | Detection circuit and structure therefor | |
| JP2614444B2 (ja) | 磁気センサ | |
| JPH0226816B2 (de) | ||
| JPH0350762A (ja) | 電流検出回路 | |
| JPS61148906A (ja) | Ｍｏｓ増幅出力回路 | |
| JPH02148907A (ja) | ヒステリシス回路 | |
| JPS6245203A (ja) | Ｍｏｓ増幅出力回路 | |
| JPH0368572B2 (de) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| EXPY | Cancellation because of completion of term |