JPH0324062B2 - - Google Patents
Info
- Publication number
- JPH0324062B2 JPH0324062B2 JP28936088A JP28936088A JPH0324062B2 JP H0324062 B2 JPH0324062 B2 JP H0324062B2 JP 28936088 A JP28936088 A JP 28936088A JP 28936088 A JP28936088 A JP 28936088A JP H0324062 B2 JPH0324062 B2 JP H0324062B2
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- gate
- electrode
- shot
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 26
- 150000001875 compounds Chemical class 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 16
- 230000005669 field effect Effects 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims 3
- 238000000034 method Methods 0.000 description 25
- 125000006850 spacer group Chemical group 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000005530 etching Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28936088A JPH01157574A (ja) | 1988-11-16 | 1988-11-16 | 電界効果トランジスタ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28936088A JPH01157574A (ja) | 1988-11-16 | 1988-11-16 | 電界効果トランジスタ |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56060381A Division JPS57173980A (en) | 1981-04-21 | 1981-04-21 | Semiconductor device and manufacture thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01157574A JPH01157574A (ja) | 1989-06-20 |
JPH0324062B2 true JPH0324062B2 (enrdf_load_stackoverflow) | 1991-04-02 |
Family
ID=17742197
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP28936088A Granted JPH01157574A (ja) | 1988-11-16 | 1988-11-16 | 電界効果トランジスタ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01157574A (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04223342A (ja) * | 1990-12-26 | 1992-08-13 | Mitsubishi Electric Corp | 半導体装置のゲート電極とその製造方法 |
JP2002270445A (ja) * | 2001-03-13 | 2002-09-20 | Sony Corp | 回転トランスおよびその製造方法 |
JP4860546B2 (ja) | 2007-05-23 | 2012-01-25 | ミネベア株式会社 | コイルボビンおよびその製造方法 |
-
1988
- 1988-11-16 JP JP28936088A patent/JPH01157574A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH01157574A (ja) | 1989-06-20 |