JPH03233978A - Light emitting device - Google Patents
Light emitting deviceInfo
- Publication number
- JPH03233978A JPH03233978A JP2029020A JP2902090A JPH03233978A JP H03233978 A JPH03233978 A JP H03233978A JP 2029020 A JP2029020 A JP 2029020A JP 2902090 A JP2902090 A JP 2902090A JP H03233978 A JPH03233978 A JP H03233978A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- electrode
- conductor layer
- circuit conductor
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims abstract description 26
- 229920005989 resin Polymers 0.000 claims abstract description 8
- 239000011347 resin Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000011521 glass Substances 0.000 abstract description 8
- 238000000034 method Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 6
- 239000012212 insulator Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- IHWJXGQYRBHUIF-UHFFFAOYSA-N [Ag].[Pt] Chemical compound [Ag].[Pt] IHWJXGQYRBHUIF-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、発光ダイオードなどを用いた発光装置に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a light emitting device using a light emitting diode or the like.
従来の技術 従来の発光装置を第４図に示す。Conventional technology A conventional light emitting device is shown in FIG.
すなわち、回路導体層３１を形成した基板３２の表面上
に発光ダイオード３３があり、発光ダイオード３３の第
２電極３４は回路導体層３１の所定の位置に接続し、発
光ダイオード３３の発光面の中心部にある第１電極３５
は金属細線３６で所定の回路導体層３１と電気的接続を
とり、その後透明樹脂３７で封止している。That is, the light emitting diode 33 is located on the surface of the substrate 32 on which the circuit conductor layer 31 is formed, the second electrode 34 of the light emitting diode 33 is connected to a predetermined position of the circuit conductor layer 31, and the second electrode 34 of the light emitting diode 33 is connected to the center of the light emitting surface of the light emitting diode 33. The first electrode 35 in the
is electrically connected to a predetermined circuit conductor layer 31 using a thin metal wire 36, and then sealed with a transparent resin 37.
発明が解決しようとする課題
しかしながら、このような発光装置では、発光面の中心
部の第１電極３５と金属細線３６が発光面から発される
光の遮光体となり、発光量が低下するという課題があっ
た。Problems to be Solved by the Invention However, in such a light emitting device, the first electrode 35 and the thin metal wire 36 at the center of the light emitting surface act as a shield for light emitted from the light emitting surface, resulting in a reduction in the amount of light emitted. was there.
そこで本発明はこの発光量の低下を目的とするものであ
る。Therefore, the present invention aims to reduce the amount of light emitted.
課題を解決するための手段
そしてこの目的を達成するために、本発明は発光素子の
発光面側の周辺に形成した第１電極を回路導体層に直接
実装し、それぞれの発光素子の第２電極を回路導体層の
所定の位置に接続するもの、である。Means for Solving the Problems In order to achieve this object, the present invention directly mounts the first electrode formed around the light emitting surface side of the light emitting element on the circuit conductor layer, and the second electrode of each light emitting element. is connected to a predetermined position on the circuit conductor layer.
作用
上記本発明によれば、発光素子の第１電極を発光面側の
周辺に形成するため、発光面の中心部に遮光体がなくな
り、発光量の向上が可能なものとなる。さらに発光面側
を透明基板上に直接実装するため、個々の発光素子の発
光面が同一面上に位置することになり発光方向が一致し
、発光効率の高いものとなる。Effects According to the present invention, since the first electrode of the light emitting element is formed around the light emitting surface side, there is no light shielding body in the center of the light emitting surface, making it possible to improve the amount of light emitted. Furthermore, since the light-emitting surface side is directly mounted on the transparent substrate, the light-emitting surfaces of the individual light-emitting elements are located on the same surface, and the light-emitting directions match, resulting in high light-emitting efficiency.
実施例 以下、本発明の一実施例を図面を用いて説明する。Example An embodiment of the present invention will be described below with reference to the drawings.
第１図（ａ）、（ｂ）は本発明の第１の実施例における
発光装置を示したものである。■は発光素子の一例とし
て用いた発光ダイオードであり、２はそれぞれの発光ダ
イオード１の電気的接続をとる金属細線である。３は発
光ダイオード１、及び金属細線２を保護するための保護
膜である。４は発光ダイオード１の発光面側に設けた第
１電極である。５はガラス透明基板であり、６はガラス
透明基板５の表面上に形威しである回路導体層である。FIGS. 1(a) and 1(b) show a light emitting device according to a first embodiment of the present invention. 2 is a light emitting diode used as an example of a light emitting element, and 2 is a thin metal wire for electrically connecting each light emitting diode 1. 3 is a protective film for protecting the light emitting diode 1 and the thin metal wire 2. Reference numeral 4 denotes a first electrode provided on the light emitting surface side of the light emitting diode 1. 5 is a glass transparent substrate, and 6 is a circuit conductor layer formed on the surface of the glass transparent substrate 5.
７は発光ダイオード１を回路導体層６に実装するための
透明紫外線硬化型絶縁樹脂である。８は発光ダイオード
２の第２電極であり回路導体層６の所定の位置に金属細
線２によって接続する。7 is a transparent ultraviolet curing insulating resin for mounting the light emitting diode 1 on the circuit conductor layer 6. A second electrode 8 of the light emitting diode 2 is connected to a predetermined position of the circuit conductor layer 6 by a thin metal wire 2.
また、第２図（ａ）、（ｂ）は、発光ダイオードエの第
１電極４、第２電極８を示したものである。Moreover, FIGS. 2(a) and 2(b) show the first electrode 4 and the second electrode 8 of the light emitting diode.
以上の様に構成される発光装置の製造方法を説明する。A method of manufacturing the light emitting device configured as described above will be explained.
まず、ＧａＡｓやＧａＰなどの単結晶Ｎ形基板をエピタ
キシャル成長基板として液相エピタキシャル成長技術を
用いてＰＮ接合を形威する。次に発光ダイオード１の第
１電極４は、金などを蒸着してフォトリソ法、あるいは
透明白金蒸着膜を用いて発光ダイオード１の４つの角々
に約１０ａｍ角、厚さ約数μｍ程度で形威し、発光ダイ
オードｌの発光面の中心に遮光体を作らない構造とする
。また、第２電極８は、発光ダイオード１と同等の面積
で厚さ約数μｍ程度で形成する。これらの方法により発
光ダイオード１を作製する。First, a PN junction is formed using a liquid phase epitaxial growth technique using a single crystal N-type substrate such as GaAs or GaP as an epitaxial growth substrate. Next, the first electrode 4 of the light-emitting diode 1 is formed by vapor-depositing gold or the like and using a photolithography method, or by using a transparent platinum vapor-deposited film, to form a shape of about 10 am square and about several μm thick on each of the four corners of the light-emitting diode 1. However, the structure is such that no light shield is formed at the center of the light emitting surface of the light emitting diode l. Further, the second electrode 8 is formed to have an area equivalent to that of the light emitting diode 1 and a thickness of about several μm. The light emitting diode 1 is manufactured by these methods.
次に、ガラス透明基板５上に金や銀−白金等の金属をス
クリーン印刷法または、薄膜形成法とフォトリソ法を用
いて回路導体層６を形成する。このガラス透明基板５の
所定の位置に透明紫外線硬化型絶縁樹脂７をデイスペン
サー等で所定量を塗布し、その上に発光ダイオード１を
フェースダウンで第１電極４を下方にして配置する。そ
の後、この発光ダイオード１に上方から圧力を加えなが
ら透明紫外線硬化型絶縁樹脂７にガラス透明基板５を通
して紫外線を照射し、硬化させ実装を完了する。次に、
発光ダイオード１の第２電極８を所定の回路導体層６に
金属細線２によって接続する。Next, a circuit conductor layer 6 is formed on the glass transparent substrate 5 using a screen printing method or a thin film forming method and a photolithography method using a metal such as gold or silver-platinum. A predetermined amount of transparent ultraviolet curable insulating resin 7 is applied to a predetermined position of the glass transparent substrate 5 using a dispenser or the like, and the light emitting diode 1 is placed thereon face down with the first electrode 4 facing downward. Thereafter, while applying pressure to the light emitting diode 1 from above, the transparent ultraviolet curing insulating resin 7 is irradiated with ultraviolet rays through the glass transparent substrate 5, and is cured to complete the mounting. next,
A second electrode 8 of the light emitting diode 1 is connected to a predetermined circuit conductor layer 6 by a thin metal wire 2.
さらにその上から、シリコン樹脂等をデイスペンサーで
塗布し保護膜３を形成する。Furthermore, silicone resin or the like is applied from above using a dispenser to form a protective film 3.
以上の様に構成された発光装置についてその動作を説明
する。発光ダイオードｌのＰＮ接合で発生した光は、透
明紫外線硬化型絶縁樹脂７とガラス透明基板５を通して
外部に発光する。The operation of the light emitting device configured as above will be explained. Light generated at the PN junction of the light emitting diode 1 is emitted to the outside through the transparent ultraviolet curing insulating resin 7 and the transparent glass substrate 5.
以下、本発明の第２の実施例を図面を用いて説明する。A second embodiment of the present invention will be described below with reference to the drawings.
第３図（ａ）、（ｂ）は、本発明の第２の実施例におけ
る発光装置を示したものである。２１は発光ダイオード
であり、２２はそれぞれの発光ダイオード２１の電気的
接続をとる導電性ペーストである。FIGS. 3(a) and 3(b) show a light emitting device according to a second embodiment of the present invention. 21 is a light emitting diode, and 22 is a conductive paste for electrically connecting each light emitting diode 21.
２３は発光ダイオード２１、及び導電性ペースト２２を
保護するための保護膜である。２４は絶縁体、２５は回
路導体層で、他の第１．第２電極４．８は第１図の槽底
と同様なものである。23 is a protective film for protecting the light emitting diode 21 and the conductive paste 22. 24 is an insulator, 25 is a circuit conductor layer, and the other first . The second electrode 4.8 is similar to the bottom of the tank in FIG.
以上の様に構成される発光装置の製造方法を説明する。A method of manufacturing the light emitting device configured as described above will be explained.
まず第１の実施例と同様な方法で作製した発光ダイオー
ド２１を所定の回路導体層２５にフェースダウンで実装
する。次に絶縁体２４を設けてフォトリソ法、スクリー
ン印刷法、華着法、スパッタ法、フォトエツチング法等
を用いて回路を構成し、導電性物質の一例である導電性
ペースト２２を発光ダイオード２１の第２電極側に塗布
し電気的接続をとる。さらにその上からシリコン樹脂等
をデイスペンサーで塗布し保護膜２３を形成する。First, a light emitting diode 21 manufactured in the same manner as in the first embodiment is mounted face down on a predetermined circuit conductor layer 25. Next, an insulator 24 is provided, a circuit is constructed using a photolithography method, a screen printing method, a flower bonding method, a sputtering method, a photoetching method, etc., and a conductive paste 22, which is an example of a conductive material, is applied to the light emitting diode 21. Apply it to the second electrode side and make an electrical connection. Further, silicone resin or the like is applied thereon using a dispenser to form a protective film 23.
以上の様に構成された発光装置についてその動作は第１
の実施例と同様である。The operation of the light emitting device configured as described above is as follows.
This is similar to the embodiment.
発明の効果
以上の様に本発明によれば、発光素子の発光面側の周辺
に第１電極を設けるので発光面からの発光を遮光するも
のがなくなり、発光量の低下が防止できる。さらに透明
基板上の回路導体層に直接実装することで個々の発光素
子の発光面が同一面上に位置することになり発光方向が
一致し、この点からも発光効率を高めることができる。Effects of the Invention As described above, according to the present invention, since the first electrode is provided around the light-emitting surface side of the light-emitting element, there is nothing blocking the light emitted from the light-emitting surface, and a decrease in the amount of light emitted can be prevented. Furthermore, by directly mounting the light-emitting elements on the circuit conductor layer on the transparent substrate, the light-emitting surfaces of the individual light-emitting elements are located on the same plane, so that the light-emitting directions match, and from this point of view as well, the light-emitting efficiency can be increased.
第１図（ａ）、（ｂ）は本発明の第１の実施例の側断面
図と正面図、第２図（ａ）、（ｂ）は本発明の第１の実
施例の発光素子の正面図と底面図、第３図（ａ）、（ｂ
）は本発明の第２の実施例の側断面図と正面図である。
第４図（ａ）、（ｂ）は従来例の側断面図と正面図であ
る。
１・・・・・・発光ダイオード、２・・・・・・金属細
線、３・・・・・・保護膜、４・・・・・・第１電極、
５・・・・・・ガラス透明基板、６・・・・・・回路導
体層、７・・・・・・透明紫外線硬化型絶縁樹脂、８・
・・・・・第２電極、２１・・・・・・発光ダイオード
、２２・・・・・・導電性ペースト、２３・・・・・・
保護膜、２４・・・・・・絶縁体、２５・・・・・・回
路導体層。FIGS. 1(a) and (b) are side sectional views and front views of the first embodiment of the present invention, and FIGS. 2(a) and (b) are of the light emitting device of the first embodiment of the present invention. Front view and bottom view, Figure 3 (a), (b)
) are a side sectional view and a front view of a second embodiment of the present invention. FIGS. 4(a) and 4(b) are a side sectional view and a front view of a conventional example. DESCRIPTION OF SYMBOLS 1... Light emitting diode, 2... Thin metal wire, 3... Protective film, 4... First electrode,
5...Glass transparent substrate, 6...Circuit conductor layer, 7...Transparent ultraviolet curing insulating resin, 8...
...Second electrode, 21...Light emitting diode, 22...Conductive paste, 23...
Protective film, 24... Insulator, 25... Circuit conductor layer.
Claims (5)
の表面上に実装した複数の発光素子とを備え、前記発光
素子はその発光面側の周辺に第１電極を有し、その第１
電極を所定の前記回路導体層に直接実装し、それぞれの
発光素子の裏面側に設けた第２電極を前記回路導体層の
所定の位置に接続した発光装置。(1) A transparent substrate on which a circuit conductor layer is formed, and a plurality of light emitting elements mounted on the surface of the transparent substrate, the light emitting element having a first electrode around the light emitting surface side, 1
A light emitting device in which an electrode is directly mounted on a predetermined circuit conductor layer, and a second electrode provided on the back side of each light emitting element is connected to a predetermined position on the circuit conductor layer.
た請求項１に記載した発光装置。(2) The light emitting device according to claim 1, wherein the first electrode of the light emitting element is formed around the light emitting element.
化型絶縁樹脂を介して実装した請求項１に記載した発光
装置。(3) The light emitting device according to claim 1, wherein the light emitting element is mounted on a circuit conductor layer on a transparent substrate via a transparent photocurable insulating resin.
体層の所定の位置に接続した請求項１に記載した発光装
置。(4) The light emitting device according to claim 1, wherein the second electrode of the light emitting element is connected to a predetermined position of the circuit conductor layer using a thin metal wire.
層の所定の位置に接続した請求項１に記載した発光装置
。(5) The light emitting device according to claim 1, wherein the second electrode of the light emitting element is connected to a predetermined position of the circuit conductor layer using a conductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2029020A JPH03233978A (en) | 1990-02-08 | 1990-02-08 | Light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2029020A JPH03233978A (en) | 1990-02-08 | 1990-02-08 | Light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03233978A true JPH03233978A (en) | 1991-10-17 |
Family
ID=12264731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2029020A Pending JPH03233978A (en) | 1990-02-08 | 1990-02-08 | Light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03233978A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004023058A (en) * | 2002-06-20 | 2004-01-22 | Seiko Epson Corp | Semiconductor device, manufacturing method therefor, electro-optical device and electronic apparatus |
| JP2015076613A (en) * | 2013-10-07 | 2015-04-20 | 廣▲ジャー▼光電股▲ふん▼有限公司 | Light emitting diode module and method for manufacturing the same |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55532A (en) * | 1978-06-14 | 1980-01-05 | Sanyo Electric Co | Display unit |
| JPS61184889A (en) * | 1985-02-12 | 1986-08-18 | Toshiba Corp | Semiconductor light emitting device |
| JPS622675A (en) * | 1985-06-28 | 1987-01-08 | Konishiroku Photo Ind Co Ltd | Light emitting diode |
| JPS62132378A (en) * | 1985-11-29 | 1987-06-15 | アメリカン テレフオン アンド テレグラフ カムパニ− | Semiconductor light emitting device and manufacture of the same |
| JPH01122462A (en) * | 1987-11-07 | 1989-05-15 | Alps Electric Co Ltd | Photowriting head |
-
1990
- 1990-02-08 JP JP2029020A patent/JPH03233978A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55532A (en) * | 1978-06-14 | 1980-01-05 | Sanyo Electric Co | Display unit |
| JPS61184889A (en) * | 1985-02-12 | 1986-08-18 | Toshiba Corp | Semiconductor light emitting device |
| JPS622675A (en) * | 1985-06-28 | 1987-01-08 | Konishiroku Photo Ind Co Ltd | Light emitting diode |
| JPS62132378A (en) * | 1985-11-29 | 1987-06-15 | アメリカン テレフオン アンド テレグラフ カムパニ− | Semiconductor light emitting device and manufacture of the same |
| JPH01122462A (en) * | 1987-11-07 | 1989-05-15 | Alps Electric Co Ltd | Photowriting head |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004023058A (en) * | 2002-06-20 | 2004-01-22 | Seiko Epson Corp | Semiconductor device, manufacturing method therefor, electro-optical device and electronic apparatus |
| US7435998B2 (en) | 2002-06-20 | 2008-10-14 | Seiko Epson Corporation | Semiconductor device, method of manufacturing the same, electro-optic device and electronic apparatus with a protective film |
| US7709283B2 (en) | 2002-06-20 | 2010-05-04 | Seiko Epson Corporation | Method of manufacturing a semiconductor device having an insulating protective film covering at least a portion of a tile-shaped element |
| JP2015076613A (en) * | 2013-10-07 | 2015-04-20 | 廣▲ジャー▼光電股▲ふん▼有限公司 | Light emitting diode module and method for manufacturing the same |
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