JPS622675A - Light emitting diode - Google Patents

Light emitting diode

Info

Publication number
JPS622675A
JPS622675A JP14224285A JP14224285A JPS622675A JP S622675 A JPS622675 A JP S622675A JP 14224285 A JP14224285 A JP 14224285A JP 14224285 A JP14224285 A JP 14224285A JP S622675 A JPS622675 A JP S622675A
Authority
JP
Japan
Prior art keywords
light emitting
light
emitting surface
electrode
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14224285A
Inventor
Masatada Kawai
Riyuuji Kurogama
Seiki Murakami
Original Assignee
Konishiroku Photo Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konishiroku Photo Ind Co Ltd filed Critical Konishiroku Photo Ind Co Ltd
Priority to JP14224285A priority Critical patent/JPS622675A/en
Publication of JPS622675A publication Critical patent/JPS622675A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Abstract

PURPOSE:To implement a light emitting diode uniform illuminance, by providing an electrode so that the electrode is deviated from the center of the light emitting surface. CONSTITUTION:An electrode 11 is formed at one corner of a light emitting surface 10. The electrode is provided so that it is deviated from the center of the light emitting surface 10. Therefore, the light at the central part of the light emitting surface 10. Therefore, the light at the central part of the light emitting surface is not shielded. The light is not shielded in the diagonal direction (direction of A-A'). When LEDs or LED chips are aligned in the diagonal direction, the light having uniform brightness can be obtained at least in the diagonal direction. The length of the uniform lighting can be freely set.
JP14224285A 1985-06-28 1985-06-28 Light emitting diode Pending JPS622675A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14224285A JPS622675A (en) 1985-06-28 1985-06-28 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14224285A JPS622675A (en) 1985-06-28 1985-06-28 Light emitting diode

Publications (1)

Publication Number Publication Date
JPS622675A true JPS622675A (en) 1987-01-08

Family

ID=15310742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14224285A Pending JPS622675A (en) 1985-06-28 1985-06-28 Light emitting diode

Country Status (1)

Country Link
JP (1) JPS622675A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03233978A (en) * 1990-02-08 1991-10-17 Matsushita Electric Ind Co Ltd Light emitting device
JPH0494380U (en) * 1991-01-11 1992-08-17
JPH04135557U (en) * 1991-06-12 1992-12-16
JPH0526962U (en) * 1991-09-17 1993-04-06 村田機械株式会社 Bobbin inspection equipment
JPH06338632A (en) * 1993-05-31 1994-12-06 Nichia Chem Ind Ltd Gallium nitride compound semiconductor light-emitting element
JP3027676U (en) * 1996-02-06 1996-08-13 日亜化学工業株式会社 GaN-based semiconductor light-emitting element
JP2002374004A (en) * 2001-06-14 2002-12-26 Nitto Kogaku Kk Led array panel and lighting device
US6507041B2 (en) 1993-04-28 2003-01-14 Nichia Chemical Industries, Ltd. Gallium nitride-based III-V group compound semiconductor

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03233978A (en) * 1990-02-08 1991-10-17 Matsushita Electric Ind Co Ltd Light emitting device
JPH0494380U (en) * 1991-01-11 1992-08-17
JPH04135557U (en) * 1991-06-12 1992-12-16
JPH0526962U (en) * 1991-09-17 1993-04-06 村田機械株式会社 Bobbin inspection equipment
US7205220B2 (en) 1993-04-28 2007-04-17 Nichia Corporation Gallium nitride based III-V group compound semiconductor device and method of producing the same
US7375383B2 (en) 1993-04-28 2008-05-20 Nichia Corporation Gallium nitride based III-V group compound semiconductor device and method of producing the same
US6507041B2 (en) 1993-04-28 2003-01-14 Nichia Chemical Industries, Ltd. Gallium nitride-based III-V group compound semiconductor
US6610995B2 (en) 1993-04-28 2003-08-26 Nichia Corporation Gallium nitride-based III-V group compound semiconductor
US6998690B2 (en) 1993-04-28 2006-02-14 Nichia Corporation Gallium nitride based III-V group compound semiconductor device and method of producing the same
JPH06338632A (en) * 1993-05-31 1994-12-06 Nichia Chem Ind Ltd Gallium nitride compound semiconductor light-emitting element
JP3027676U (en) * 1996-02-06 1996-08-13 日亜化学工業株式会社 GaN-based semiconductor light-emitting element
JP2002374004A (en) * 2001-06-14 2002-12-26 Nitto Kogaku Kk Led array panel and lighting device

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