JPH088463A - Thin type led dot matrix unit - Google Patents
Thin type led dot matrix unitInfo
- Publication number
- JPH088463A JPH088463A JP6138600A JP13860094A JPH088463A JP H088463 A JPH088463 A JP H088463A JP 6138600 A JP6138600 A JP 6138600A JP 13860094 A JP13860094 A JP 13860094A JP H088463 A JPH088463 A JP H088463A
- Authority
- JP
- Japan
- Prior art keywords
- thin
- insulating substrate
- dot matrix
- led
- matrix unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、文字や図形等の表示
に使用される薄型ＬＥＤ(発光ダイオード)ドットマトリ
ックスユニットに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin LED (light emitting diode) dot matrix unit used for displaying characters and figures.
【０００２】[0002]
【従来の技術】従来、薄型ＬＥＤドットマトリックスユ
ニットとしては、図１０(a),(b)に示すものがある。こ
の薄型ＬＥＤドットマトリックスユニットは、略正方形
状のケース１０１と、上記ケース１０１の表面側に格子
状に配列された１６個のＬＥＤ部１０２,１０２,…と、
上記ケース１０１の裏面側に取り付けられたリードフレ
ーム１０３,１０３,…とを備えている。2. Description of the Related Art Conventionally, there are thin LED dot matrix units shown in FIGS. 10 (a) and 10 (b). This thin LED dot matrix unit includes a case 101 having a substantially square shape, and 16 LED parts 102, 102, ... Arranged in a lattice on the surface side of the case 101.
It is provided with lead frames 103, 103, ... Attached to the back surface side of the case 101.
【０００３】上記薄型ＬＥＤドットマトリックスユニッ
トは、図１１(a)に示すように、絶縁基板１１０上に互
いに絶縁された金属層１１１,１１２を形成し、一方の
金属層１１１上に導電ペーストを用いて複数のＬＥＤチ
ップ１１３(図１０(a)では一つのみを示す)を固定し、
ＬＥＤチップ１１３の上部を他方の金属層１１２に金属
細線１１５を介して接続している。そして、上記ＬＥＤ
チップ１１３の周囲に反射ケース１１６を取り付けて、
各ＬＥＤチップ１１３が点灯した時に互いに干渉しない
ようにしている。In the thin LED dot matrix unit, as shown in FIG. 11A, metal layers 111 and 112 insulated from each other are formed on an insulating substrate 110, and a conductive paste is used on one of the metal layers 111. Fixing a plurality of LED chips 113 (only one is shown in FIG. 10 (a)),
The upper part of the LED chip 113 is connected to the other metal layer 112 via a thin metal wire 115. And the above LED
Attach the reflective case 116 around the chip 113,
When the LED chips 113 are turned on, they do not interfere with each other.
【０００４】[0004]
【発明が解決しようとする課題】ところで、上記薄型Ｌ
ＥＤドットマトリックスユニットにおいて、上記絶縁基
板１１０上の反射ケース１１６の凹部１１７の寸法は、
ＬＥＤチップ１１３と金属層１１２とを接続する金属細
線１１５に接触しないように考慮する必要がある。ま
た、図１１(b)に示すように、発光時にＬＥＤチップ１
２３からの光が凹部１２１内において均一に反射される
ように、ＬＥＤチップ１２３を凹部１２１の中央に配置
する場合、そのＬＥＤチップ１２３と金属層１２２とを
接続する金属細線の空間を確保するため、反射ケース１
２６の寸法を小さくできず、ＬＥＤチップ１２３の配列
ピッチを狭くできないという欠点がある。By the way, the above-mentioned thin L
In the ED dot matrix unit, the size of the recess 117 of the reflection case 116 on the insulating substrate 110 is as follows.
It is necessary to consider so as not to contact the thin metal wire 115 connecting the LED chip 113 and the metal layer 112. In addition, as shown in FIG. 11 (b), the LED chip 1
When the LED chip 123 is arranged in the center of the recess 121 so that the light from the LED 23 is uniformly reflected in the recess 121, in order to secure a space for the metal thin wire connecting the LED chip 123 and the metal layer 122. , Reflective case 1
There is a drawback that the size of 26 cannot be reduced and the arrangement pitch of the LED chips 123 cannot be narrowed.
【０００５】また、図１１(a),(b)において、上記ＬＥ
Ｄチップ１１３,１２３を配列する絶縁基板１１０,１２
０上に金属層１１１,１２１を形成して、その金属層１
１１,１２１上にＬＥＤチップ１１３,１２３を固定して
いるので、絶縁基板１１０,１２０の厚み分この薄型Ｌ
ＥＤドットマトリックスユニットは厚くなるという問題
がある。Further, in FIGS. 11 (a) and 11 (b), the LE
Insulating substrates 110 and 12 on which D chips 113 and 123 are arranged
0, metal layers 111 and 121 are formed, and the metal layer 1
Since the LED chips 113, 123 are fixed on the 11, 121, the thin L
There is a problem that the ED dot matrix unit becomes thick.
【０００６】そこで、この発明の目的は、薄型化と高精
細化ができ、かつＬＥＤチップの放熱効率を向上できる
薄型ＬＥＤドットマトリックスユニットを提供すること
にある。Therefore, an object of the present invention is to provide a thin LED dot matrix unit which can be made thin and high definition, and which can improve the heat dissipation efficiency of the LED chip.
【０００７】また、この発明のもう一つの目的は、ＬＥ
Ｄチップからの光の反射効率をよくして、明るい薄型Ｌ
ＥＤドットマトリックスユニットを提供することにあ
る。Another object of the present invention is LE
Bright thin L that improves the reflection efficiency of light from the D chip
It is to provide an ED dot matrix unit.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するた
め、請求項１の薄型ＬＥＤドットマトリックスユニット
は、マトリックス状に配列された複数の貫通穴を有する
絶縁基板と、上記絶縁基板の裏面側に設けられ、上記複
数の貫通穴の裏面側の開口部分を塞ぐ第１金属層と、上
記絶縁基板の上記複数の貫通穴内に、夫々、上記第１金
属層に導通するように固定されたＬＥＤチップと、上記
複数の貫通穴の開口部分を除く上記絶縁基板の表面側に
設けられた第２金属層と、上記ＬＥＤチップと上記第２
金属層とを接続する金属細線とを備えたことを特徴とし
ている。In order to achieve the above object, the thin LED dot matrix unit according to claim 1 has an insulating substrate having a plurality of through holes arranged in a matrix, and a back surface side of the insulating substrate. A first metal layer which is provided and closes an opening portion on the back surface side of the plurality of through holes, and an LED chip fixed in the plurality of through holes of the insulating substrate so as to be electrically connected to the first metal layer, respectively. A second metal layer provided on the front surface side of the insulating substrate except the openings of the plurality of through holes, the LED chip and the second metal layer.
It is characterized in that it is provided with a thin metal wire for connecting with a metal layer.
【０００９】また、請求項２の薄型ＬＥＤドットマトリ
ックスユニットは、請求項１の薄型ＬＥＤドットマトリ
ックスユニットにおいて、上記絶縁基板の各貫通穴内
に、夫々、２以上のＬＥＤチップを上記第１金属層に導
電するように固定すると共に、上記２以上のＬＥＤチッ
プに対応して、上記絶縁基板の表面側に互いに絶縁され
た２以上の第２金属層を設けたことを特徴としている。The thin LED dot matrix unit according to a second aspect is the thin LED dot matrix unit according to the first aspect, wherein two or more LED chips are respectively formed in the through holes of the insulating substrate on the first metal layer. It is characterized in that it is fixed so as to be conductive, and two or more second metal layers insulated from each other are provided on the surface side of the insulating substrate in correspondence with the two or more LED chips.
【００１０】また、請求項３の薄型ＬＥＤドットマトリ
ックスユニットは、請求項１または２の薄型ＬＥＤドッ
トマトリックスユニットにおいて、上記絶縁基板の上記
複数の貫通穴内の側面は、上記第１金属層側に向かって
徐々に狭くなるテーパー形状であることを特徴としてい
る。The thin LED dot matrix unit according to a third aspect is the thin LED dot matrix unit according to the first or second aspect, wherein the side surfaces in the plurality of through holes of the insulating substrate face the first metal layer side. It is characterized by a taper shape that gradually narrows.
【００１１】また、請求項４の薄型ＬＥＤドットマトリ
ックスユニットは、請求項１乃至３のいずれか一つの薄
型ＬＥＤドットマトリックスユニットにおいて、上記Ｌ
ＥＤチップおよび上記金属細線の周囲を覆う樹脂からな
る保護部を形成したことを特徴としている。The thin LED dot matrix unit according to claim 4 is the thin LED dot matrix unit according to any one of claims 1 to 3,
It is characterized in that a protective portion made of a resin is formed to cover the periphery of the ED chip and the thin metal wire.
【００１２】[0012]
【作用】上記請求項１の薄型ＬＥＤドットマトリックス
ユニットによれば、上記絶縁基板のマトリックス状に配
列された複数の貫通穴内に、夫々固定されたＬＥＤチッ
プは、上記第１金属層からＬＥＤチップ,金属細線を介
して第２金属層に電流を流すか、または第２金属層から
金属細線,ＬＥＤチップを介して第１金属層に電流を流
すことによって発光する。そして、上記ＬＥＤチップか
らの熱を第１金属層に放熱する。また、上記絶縁基板が
各ＬＥＤチップの点灯時に干渉しないように反射ケース
の役割をする。しかも、上記ＬＥＤチップと第１金属層
は、金属細線を介さず導通しているので、金属細線を用
いて接続するときの空間を必要としない。According to the thin LED dot matrix unit of claim 1, the LED chips fixed in the plurality of through holes arranged in a matrix of the insulating substrate are the LED chips from the first metal layer, Light is emitted by applying a current to the second metal layer through the thin metal wire, or by applying a current from the second metal layer to the first metal layer through the thin metal wire and the LED chip. Then, the heat from the LED chip is radiated to the first metal layer. In addition, the insulating substrate serves as a reflection case so as not to interfere with each other when the LED chips are turned on. Moreover, since the LED chip and the first metal layer are electrically connected to each other without a metal thin wire, no space is required when connecting using the metal thin wire.
【００１３】したがって、上記ＬＥＤチップの一方を金
属細線を用いることなく第１金属層に固定すると共に、
ＬＥＤチップの他方を金属細線を介して貫通穴の外側の
第２金属層に接続するので、絶縁基板の貫通穴を小さく
でき、ＬＥＤチップの配列ピッチを小さくできるので、
高精細な薄型ＬＥＤドットマトリックスユニットを実現
できる。また、上記ＬＥＤチップは、絶縁基板の裏面側
に設けられた第１金属層に固定され、その第1金属層の
下には絶縁基板が無いから、この薄型ＬＥＤドットマト
リックスユニットを薄型化できる。さらに、上記ＬＥＤ
チップの面と第１金属層の面で固定されているので、Ｌ
ＥＤチップから第１金属層への熱伝導率がよく、放熱効
率がよくなって信頼性が向上する。Therefore, one of the LED chips is fixed to the first metal layer without using a metal thin wire, and
Since the other side of the LED chip is connected to the second metal layer outside the through hole via the thin metal wire, the through hole of the insulating substrate can be made small and the arrangement pitch of the LED chips can be made small.
A high-definition thin LED dot matrix unit can be realized. Further, since the LED chip is fixed to the first metal layer provided on the back surface side of the insulating substrate and there is no insulating substrate under the first metal layer, this thin LED dot matrix unit can be thinned. Furthermore, the above LED
Since it is fixed on the surface of the chip and the surface of the first metal layer, L
The thermal conductivity from the ED chip to the first metal layer is good, the heat dissipation efficiency is improved, and the reliability is improved.
【００１４】また、上記請求項２の薄型ＬＥＤドットマ
トリックスユニットによれば、請求項１の薄型ＬＥＤド
ットマトリックスユニットにおいて、上記絶縁基板の各
貫通穴内に、夫々、２以上のＬＥＤチップを上記第１金
属層に導電するように固定すると共に、上記２以上のＬ
ＥＤチップに対応して、上記絶縁基板の表面側に互いに
絶縁された２以上の第２金属層を設ける。したがって、
上記絶縁基板の貫通穴内に異なる色の光を発する２以上
のＬＥＤチップを固定した場合、多色発光で高精細な薄
型ＬＥＤドットマトリックスユニットを実現できる。Further, according to the thin LED dot matrix unit of claim 2, in the thin LED dot matrix unit of claim 1, two or more LED chips are respectively provided in the through holes of the insulating substrate. It is fixed to the metal layer so as to be conductive, and at least two L
Corresponding to the ED chip, two or more second metal layers insulated from each other are provided on the surface side of the insulating substrate. Therefore,
When two or more LED chips emitting light of different colors are fixed in the through holes of the insulating substrate, a high-definition thin LED dot matrix unit with multicolor emission can be realized.
【００１５】また、上記請求項３の薄型ＬＥＤドットマ
トリックスユニットによれば、請求項１または２の薄型
ＬＥＤドットマトリックスユニットにおいて、上記絶縁
基板の上記複数の貫通穴内の側面は、上記第１金属層側
に向かって徐々に狭くなるテーパー形状であるので、上
記ＬＥＤチップから発せられた光のうち貫通穴の側面に
向かって進む光は、貫通穴の側面によって絶縁基板の表
面側の上方に向かって反射する。したがって、上記ＬＥ
Ｄチップからの光を有効に活用して、明るい薄型ＬＥＤ
ドットマトリックスユニットを実現できる。According to the thin LED dot matrix unit of the third aspect, in the thin LED dot matrix unit of the first or second aspect, the side surface in the plurality of through holes of the insulating substrate is the first metal layer. Since it has a taper shape that gradually narrows toward the side, the light emitted from the LED chip and traveling toward the side surface of the through hole is directed upward by the side surface of the through hole due to the side surface of the through hole. reflect. Therefore, the LE
Bright thin LED that effectively utilizes the light from the D chip
A dot matrix unit can be realized.
【００１６】また、上記請求項４の薄型ＬＥＤドットマ
トリックスユニットによれば、請求項１乃至３のいずれ
か一つの薄型ＬＥＤドットマトリックスユニットにおい
て、上記ＬＥＤチップおよび上記金属細線の周囲を覆う
樹脂からなる保護部を形成しているので、外部からの応
力に対してＬＥＤチップと金属細線が保護される。According to the thin LED dot matrix unit of the fourth aspect, in the thin LED dot matrix unit according to any one of the first to third aspects, the thin LED dot matrix unit is made of a resin covering the LED chip and the metal thin wire. Since the protective portion is formed, the LED chip and the thin metal wire are protected against external stress.
【００１７】[0017]
【実施例】以下、この発明の薄型ＬＥＤドットマトリッ
クスユニットを実施例により詳細に説明する。EXAMPLES The thin LED dot matrix unit of the present invention will be described in detail below with reference to examples.
【００１８】（第１実施例）図１はこの発明の第１実施
例の薄型ＬＥＤドットマトリックスユニットの正面図を
示し、図２は図１のII−II線から見た断面図を示してい
る。(First Embodiment) FIG. 1 is a front view of a thin LED dot matrix unit according to the first embodiment of the present invention, and FIG. 2 is a sectional view taken along the line II--II of FIG. .
【００１９】図１,図２において、１はマトリックス状
に３行３列の貫通穴１０,１０,…を設けた略正方形状の
絶縁基板、２a,２b,２cは上記絶縁基板１の貫通穴１０,
１０,…の裏面側の開口部分を塞ぎ、図３に示す貫通穴
１０,１０,…の行毎に絶縁基板１の裏面側と張り合わせ
た第１金属層、３は上記絶縁基板１の各貫通穴１０,１
０,…内の第１金属層２a,２b,２cに導電ペーストによっ
て固定されたＬＥＤチップ、４a,４b,４cは上記貫通穴
１０,１０,…の各列に平行に、貫通穴１０,１０,…の開
口部分を除く絶縁基板１の表面側に張り合わせた第２金
属層、５は上記ＬＥＤチップ３と第２金属層４a,４b,４
cとを夫々接続する金属細線である。なお、上記絶縁基
板１は、ガラスクロスエポキシ樹脂からなると共に、上
記第１金属層２a,２b,２cと第２金属層４a,４b,４cは、
銅フィルムにニッケル層を形成した後、さらにそのニッ
ケル層の上に銀層を形成したものである。また、上記絶
縁基板１の表面側を透明樹脂または着色された半透明樹
脂で封止して、ＬＥＤチップ３と金属細線５を外部応力
から保護してもよい。In FIGS. 1 and 2, 1 is a substantially square insulating substrate having through holes 10, 10, ... In a matrix of 3 rows and 3 columns, 2a, 2b, 2c are through holes of the insulating substrate 1. 10,
The first metal layer 3, which is formed by closing the opening portion on the back surface side of 10, ... And is bonded to the back surface side of the insulating substrate 1 for each row of the through holes 10, 10 ,. Hole 10,1
LED chips 4a, 4b, 4c fixed to the first metal layers 2a, 2b, 2c in 0, ... With conductive pastes are parallel to the rows of the through holes 10, 10 ,. , The second metal layer 5 bonded to the surface side of the insulating substrate 1 excluding the openings of the LED chip 3 and the second metal layers 4a, 4b, 4
It is a thin metal wire that connects with c and respectively. The insulating substrate 1 is made of glass cloth epoxy resin, and the first metal layers 2a, 2b, 2c and the second metal layers 4a, 4b, 4c are
After forming a nickel layer on a copper film, a silver layer is further formed on the nickel layer. The surface side of the insulating substrate 1 may be sealed with a transparent resin or a colored translucent resin to protect the LED chip 3 and the thin metal wire 5 from external stress.
【００２０】上記絶縁基板１の貫通穴１０,１０,…は、
第１金属層２a,２b,２cに向かって徐々に狭くなる円錐
台形状をしており、貫通穴１０,１０,…内の側面はテー
パー形状をしている。この貫通穴１０,１０,…のテーパ
ー形状は、金型を用いて貫通穴１０,１０,…と同時に成
形している。The through holes 10, 10, ... Of the insulating substrate 1 are
It has a truncated cone shape that gradually narrows toward the first metal layers 2a, 2b, 2c, and the side surfaces inside the through holes 10, 10, ... Have a tapered shape. The tapered shape of the through holes 10, 10, ... Is formed simultaneously with the through holes 10, 10 ,.
【００２１】図４は上記薄型ＬＥＤドットマトリックス
ユニットの回路図を示している。上記第１金属層２a,２
b,２cと第２金属層４a,４b,４cは格子状に交差してお
り、３行３列に配列されたＬＥＤチップ３のカソード
は、行毎に第１金属層２a,２b,２cに夫々接続してい
る。一方、上記ＬＥＤチップ３のアノードは、列毎に第
２金属層４a,４b,４cに夫々接続している。例えば、上
記第２金属層４aから第１金属層２cに電流を流すことに
よって、矢印Ａの位置のＬＥＤチップ３を点灯させるこ
とができ、電流を流す第１金属層２a,２b,２cと第２金
属層４a,４b,４cを選択することによって、任意の位置
のＬＥＤチップ３を点灯させることができる。FIG. 4 shows a circuit diagram of the thin LED dot matrix unit. The first metal layer 2a, 2
The b, 2c and the second metal layers 4a, 4b, 4c intersect in a grid pattern, and the cathodes of the LED chips 3 arranged in 3 rows and 3 columns are arranged in the first metal layers 2a, 2b, 2c row by row. They are connected to each other. On the other hand, the anodes of the LED chips 3 are connected to the second metal layers 4a, 4b, 4c for each column. For example, by supplying a current from the second metal layer 4a to the first metal layer 2c, the LED chip 3 at the position of the arrow A can be turned on, and the first metal layers 2a, 2b, 2c and the first metal layers 2a, 2b, and 2c through which the current flows. By selecting the two metal layers 4a, 4b, 4c, the LED chip 3 at an arbitrary position can be turned on.
【００２２】このように、上記ＬＥＤチップ３の裏面を
金属細線を用いず第１金属層２a,２b,２cに固定すると
共に、金属細線５の一端を絶縁基板１の貫通穴１０,１
０,…の外側の第２金属層４a,４b,４cにボンディングす
るので、貫通穴の底部に金属細線をボンディングするの
に比べ絶縁基板１の貫通穴１０,１０,…を小さくでき、
ＬＥＤチップ３の配列ピッチを小さくできるので、高精
細な薄型ＬＥＤドットマトリックスユニットを実現する
ことができる。また、上記ＬＥＤチップ３は、絶縁基板
１の裏面側に設けられた第１金属層２a,２b,２cに固定
され、その第１金属層２a,２b,２cの下には絶縁基板が
無いから、この薄型ＬＥＤドットマトリックスユニット
をさらに薄型化することができる。In this way, the back surface of the LED chip 3 is fixed to the first metal layers 2a, 2b, 2c without using metal thin wires, and one end of the metal thin wire 5 is connected to the through holes 10, 1 of the insulating substrate 1.
Since the second metal layers 4a, 4b, 4c on the outer side of 0, ... Are bonded, the through holes 10, 10, ... Of the insulating substrate 1 can be made smaller than the case where a thin metal wire is bonded at the bottom of the through holes.
Since the arrangement pitch of the LED chips 3 can be reduced, a high-definition thin LED dot matrix unit can be realized. Further, the LED chip 3 is fixed to the first metal layers 2a, 2b, 2c provided on the back surface side of the insulating substrate 1, and there is no insulating substrate under the first metal layers 2a, 2b, 2c. The thin LED dot matrix unit can be made even thinner.
【００２３】さらに、上記ＬＥＤチップ３の裏面と第１
金属層２a,２b,２cの面で熱伝導率よく固定されている
ので、ＬＥＤチップ３から第１金属層２a,２b,２cへの
放熱効率がよくなり、信頼性を向上させることができ
る。Further, the back surface of the LED chip 3 and the first
Since the surfaces of the metal layers 2a, 2b, 2c are fixed with good thermal conductivity, the heat dissipation efficiency from the LED chip 3 to the first metal layers 2a, 2b, 2c is improved, and the reliability can be improved.
【００２４】また、上記絶縁基板１の貫通穴１０,１０,
…内の側面は、第１金属層２a,２b,２c側に向かって徐
々に狭くなるテーパー形状であるので、上記ＬＥＤチッ
プ３から発せられた光のうち、貫通穴１０,１０,…の側
面に向かって進む光は、絶縁基板１の表面側の上方に向
かって反射する。したがって、上記ＬＥＤチップ３から
の光を有効に活用でき、明るい薄型ＬＥＤドットマトリ
ックスユニットを実現できる。Further, the through holes 10, 10,
Since the inner side surfaces have a tapered shape that gradually narrows toward the first metal layers 2a, 2b, 2c side, the side surfaces of the through holes 10, 10, ... Of the light emitted from the LED chip 3 described above. The light traveling toward is reflected upward on the surface side of the insulating substrate 1. Therefore, the light from the LED chip 3 can be effectively utilized, and a bright thin LED dot matrix unit can be realized.
【００２５】この薄型ＬＥＤドットマトリックスユニッ
トの高精細化と薄型化について、図９(a),(b)の具体例
により以下に説明する。なお、図９(a),(b)は説明を容
易にするため、凹部内の側面はテーパー形状ではない。The high definition and thinning of the thin LED dot matrix unit will be described below with reference to specific examples shown in FIGS. 9 (a) and 9 (b). 9 (a) and 9 (b), the side surface inside the recess is not tapered for ease of explanation.
【００２６】図９(a)は従来の薄型ＬＥＤドットマトリ
ックスユニットの断面図を示しており、厚さ０.４mmの
絶縁基板９０の表面側にＬＥＤチップ９３を配置し、Ｌ
ＥＤチップ９３,９３との間の反射ケース９１の幅は０.
４mm、凹部９２,９２の各中心Ａの距離すなわち配列ピ
ッチは１.５mmである。また、上記反射ケース９１の高
さは０.７mmで絶縁基板９０の厚さ０.４mmと合わせて、
全体の厚さは１.１mmである。これに対して、図９(b)は
この発明の薄型ＬＥＤドットマトリックスユニットの断
面図を示しており、絶縁基板９６の互いに隣接する貫通
穴９４,９４の間の幅は０.４mm、互いに隣接する貫通穴
９４,９４の各中心Ｂ,Ｂの距離すなわち配列ピッチは
１.０mmである。また上記絶縁基板９６と第１金属層９
５の厚さ０.４５mmと絶縁基板９６上の透明樹脂からな
る保護部９８の厚さ０.３mmを合わせて、全体の厚さは
０.７５mmである。したがって、図９(b)に示す薄型ＬＥ
Ｄドットマトリックスユニットの配列ピッチは、図９
(a)に示す薄型ＬＥＤドットマトリックスユニットの配
列ピッチに比べて約６７％(＝1.0／1.5×100)高精細化
できると共に、厚さは約６８％(＝0.75／1.1×100)薄型
化できる。FIG. 9 (a) shows a cross-sectional view of a conventional thin LED dot matrix unit, in which an LED chip 93 is arranged on the front surface side of an insulating substrate 90 having a thickness of 0.4 mm.
The width of the reflective case 91 between the ED chips 93, 93 is 0.
4 mm, the distance between the centers A of the recesses 92, 92, that is, the arrangement pitch is 1.5 mm. In addition, the height of the reflection case 91 is 0.7 mm, and the thickness of the insulating substrate 90 is 0.4 mm.
The total thickness is 1.1 mm. On the other hand, FIG. 9B shows a cross-sectional view of the thin LED dot matrix unit of the present invention, in which the width between the through holes 94, 94 of the insulating substrate 96 is 0.4 mm, which are adjacent to each other. The distance between the centers B of the through holes 94, 94, that is, the arrangement pitch is 1.0 mm. In addition, the insulating substrate 96 and the first metal layer 9
The total thickness is 0.75 mm when the thickness of 0.45 mm of No. 5 and the thickness of the protective portion 98 made of transparent resin on the insulating substrate 96 are 0.3 mm. Therefore, the thin LE shown in FIG.
The arrangement pitch of the D dot matrix units is shown in FIG.
Compared to the arrangement pitch of the thin LED dot matrix unit shown in (a), it can be made finer by about 67% (= 1.0 / 1.5 × 100) and can be made thinner by about 68% (= 0.75 / 1.1 × 100). .
【００２７】（第２実施例）図５はこの発明の第２実施
例の薄型ＬＥＤドットマトリックスユニットの正面図を
示し、図６は図５のVI−VI線から見た断面図である。(Second Embodiment) FIG. 5 is a front view of a thin LED dot matrix unit according to a second embodiment of the present invention, and FIG. 6 is a sectional view taken along line VI-VI of FIG.
【００２８】図５,図６において、５１はマトリックス
状に配列された略長方形状の複数の貫通穴６０(図５,図
６では一つのみを示す)を有するガラスエポキシ樹脂製
の絶縁基板、５２は上記絶縁基板５１の裏面側に貼り合
わされた第１金属層、５３は上記貫通穴６０の開口部の
長辺側の縁近傍に、絶縁基板５１の表面と表面が同一平
面となるように貼り合わされた第２金属層、５４は上記
絶縁基板５１上と第２金属層５３上に、貫通穴６０より
開口部が広く、かつ第２金属層５３の貫通穴６０側の略
長方形状の一部を除いて形成された樹脂層、５５は上記
第２金属層５３側で貫通穴６０の開口部の長辺側の近傍
に、樹脂層５４の表面と表面が同一平面となるように張
り合わされ、上記第２金属層５３と互いに絶縁された第
２金属層、５６は上記樹脂層５４上と第２金属層５５上
に、第２金属層５５の貫通穴６０側の略長方形状の一部
を除いて形成された樹脂層である。そして、上記第１金
属層５２上に異なる色の光を発するＬＥＤチップ６１,
６２を導電ペースト６６により固定している。そして、
上記ＬＥＤチップ６１と第２金属層５３を金属細線６３
を介して接続し、ＬＥＤチップ６２と第２金属層５５を
金属細線６４を介して接続している。なお、上記貫通穴
６０の近傍の第２金属層５３,５５の略長方形状の部分
は、階段状に並んで、金属細線６３,６４のボンディン
グが容易なようにしている。そして、上記ＬＥＤチップ
６１,６２と金属細線６３,６４を覆うように透明樹脂か
らなる保護部６５を形成している。In FIGS. 5 and 6, 51 is an insulating substrate made of glass epoxy resin having a plurality of substantially rectangular through holes 60 (only one is shown in FIGS. 5 and 6) arranged in a matrix. Reference numeral 52 denotes a first metal layer bonded to the back surface side of the insulating substrate 51, and 53 denotes a surface of the insulating substrate 51 flush with the surface near the long side edge of the opening of the through hole 60. The bonded second metal layer 54 has a wider opening than the through hole 60 on the insulating substrate 51 and the second metal layer 53, and has a substantially rectangular shape on the through hole 60 side of the second metal layer 53. The resin layer 55 formed by excluding the portion is adhered to the second metal layer 53 side in the vicinity of the long side of the opening of the through hole 60 so that the surface of the resin layer 54 is flush with the surface. , A second metal layer insulated from the second metal layer 53, and 56 is It is a resin layer formed on the resin layer 54 and the second metal layer 55 except for a part of the second metal layer 55 having a substantially rectangular shape on the side of the through hole 60. The LED chips 61, which emit light of different colors, are formed on the first metal layer 52.
62 is fixed by a conductive paste 66. And
The LED chip 61 and the second metal layer 53 are connected to each other by a thin metal wire 63.
The LED chip 62 and the second metal layer 55 are connected to each other via the metal thin wire 64. The substantially rectangular portions of the second metal layers 53, 55 in the vicinity of the through holes 60 are arranged in a staircase pattern so that the thin metal wires 63, 64 can be easily bonded. A protective portion 65 made of transparent resin is formed so as to cover the LED chips 61, 62 and the thin metal wires 63, 64.
【００２９】上記ＬＥＤチップ６１,６２を１ブロック
として、そのブロックを絶縁基板５１に配列することに
よって、２色発光の薄型ＬＥＤドットマトリックスユニ
ットを構成する。なお、上記第１金属層５２,第２金属
層５３および第２金属層５５は、図示しないスルーホー
ル等により上記絶縁基板５１の裏面または樹脂層５６の
表面に導かれ、リードフレーム等を介して外部回路(図
示せず)と接続するようにしている。By forming the LED chips 61 and 62 as one block and arranging the blocks on the insulating substrate 51, a two-color light emitting thin LED dot matrix unit is constructed. The first metal layer 52, the second metal layer 53, and the second metal layer 55 are guided to the back surface of the insulating substrate 51 or the front surface of the resin layer 56 by a through hole or the like (not shown), and through a lead frame or the like. It is designed to be connected to an external circuit (not shown).
【００３０】このようにして、上記第１金属層５２上に
ＬＥＤチップ６１,６２を固定し、絶縁基板５１を反射
ケースにすることによって、ＬＥＤチップ６１,６２を
固定する絶縁基板を無くして、その絶縁基板の厚み分、
この薄型ＬＥＤドットマトリックスユニットを薄型化す
ることができる。In this way, the LED chips 61, 62 are fixed on the first metal layer 52, and the insulating substrate 51 is used as a reflection case, thereby eliminating the insulating substrate for fixing the LED chips 61, 62. The thickness of the insulating substrate,
This thin LED dot matrix unit can be made thin.
【００３１】また、上記ＬＥＤチップ６１,６２の裏面
と第１金属層５２の面で固定されているので、ＬＥＤチ
ップ６１,６２から第１金属６２への熱伝導率がよくな
り、放熱効率が向上する。Since the LED chips 61 and 62 are fixed to the back surface of the LED chip 61 and 62 and the surface of the first metal layer 52, the heat conductivity from the LED chips 61 and 62 to the first metal 62 is improved and the heat dissipation efficiency is improved. improves.
【００３２】また、上記絶縁基板５１の貫通穴６０内に
異なる色の光を発するＬＥＤチップ６１,６２を固定し
ているので、２色発光でかつ高精細な薄型ＬＥＤドット
マトリックスユニットを実現することができる。Since the LED chips 61 and 62 which emit light of different colors are fixed in the through hole 60 of the insulating substrate 51, it is possible to realize a high-definition thin LED dot matrix unit which emits two colors. You can
【００３３】また、上記絶縁基板５１の貫通穴６０内の
側面は、第１金属層５２側に向かって徐々に狭くなるテ
ーパー形状であり、樹脂層５４,５６の側面も貫通穴６
０の側面に沿って上向に向かって徐々に広がるので、上
記ＬＥＤチップ６１,６２から発せられた光のうち、貫
通穴６０の側面と樹脂層５４,５６の側面に向かって進
む光は、上方に向かって反射する。したがって、上記Ｌ
ＥＤチップ６１,６２からの光を有効に活用して、明る
い薄型ＬＥＤドットマトリックスユニットを実現するこ
とができる。The side surface of the insulating substrate 51 inside the through hole 60 has a taper shape that gradually narrows toward the first metal layer 52 side, and the side surfaces of the resin layers 54 and 56 also have the through hole 6.
Since the light gradually spreads upward along the side surface of 0, among the light emitted from the LED chips 61 and 62, the light that proceeds toward the side surface of the through hole 60 and the side surfaces of the resin layers 54 and 56 is Reflect upwards. Therefore, the above L
A bright thin LED dot matrix unit can be realized by effectively utilizing the light from the ED chips 61 and 62.
【００３４】また、上記ＬＥＤチップ６１,６２および
金属細線６３,６４の周囲を覆う透明樹脂からなる保護
部６５によって、外部からの応力に対してＬＥＤチップ
６１,６２と金属細線６３,６４が保護される。The LED chips 61, 62 and the thin metal wires 63, 64 are protected against external stress by the protective portion 65 made of a transparent resin that covers the LED chips 61, 62 and the thin metal wires 63, 64. To be done.
【００３５】（第３実施例）図７はこの発明の第２実施
例の薄型ＬＥＤドットマトリックスユニットの正面図を
示し、図８は図７のVIII−VIII線から見た断面図であ
る。(Third Embodiment) FIG. 7 is a front view of a thin LED dot matrix unit according to a second embodiment of the present invention, and FIG. 8 is a sectional view taken along line VIII-VIII of FIG.
【００３６】図７,図８において、７１はマトリックス
状に配列された略長方形状の複数の貫通穴７０(図７,図
８では一つのみを示す)を有するガラスクロスエポキシ
樹脂製の絶縁基板、７２は上記絶縁基板７１の裏面側に
貼り合わされた第１金属層、７３は上記貫通穴７０の開
口部の長辺側の一方の絶縁基板７１の表面側に貼り合わ
された第２金属層、７４は上記第２金属層７３と絶縁さ
れ、上記貫通穴７０の開口部の長辺側の他方の絶縁基板
７１の表面側に貼り合わされた第２金属層、７５は上記
第２金属層７３上と第２金属層７４上に形成された樹脂
層である。上記絶縁基板７１の貫通穴７０内の第１金属
層７２上に導電ペースト８０を用いて、ＬＥＤチップ８
１,８２を固定を固定している。上記ＬＥＤチップ８１
と第２金属層７３を金属細線７６により接続し、ＬＥＤ
チップ８２と第２金属層７４を金属細線７７により接続
している。そして、上記ＬＥＤチップ８１,８２と金属
細線７６,７７を覆うように透明樹脂からなる保護部８
５を形成している。In FIGS. 7 and 8, 71 is a glass cloth epoxy resin insulating substrate having a plurality of substantially rectangular through holes 70 (only one is shown in FIGS. 7 and 8) arranged in a matrix. , 72 is a first metal layer adhered to the back surface side of the insulating substrate 71, 73 is a second metal layer adhered to the front surface side of one insulating substrate 71 on the long side of the opening of the through hole 70, 74 is a second metal layer that is insulated from the second metal layer 73, and is attached to the surface side of the other insulating substrate 71 on the long side of the opening of the through hole 70, and 75 is on the second metal layer 73. And a resin layer formed on the second metal layer 74. The LED chip 8 is formed by using the conductive paste 80 on the first metal layer 72 in the through hole 70 of the insulating substrate 71.
Fixed 1,82 fixed. The LED chip 81
And the second metal layer 73 are connected by a thin metal wire 76,
The chip 82 and the second metal layer 74 are connected by a thin metal wire 77. The protective portion 8 made of transparent resin covers the LED chips 81, 82 and the thin metal wires 76, 77.
5 is formed.
【００３７】このようにして、上記第１金属層７２上に
ＬＥＤチップ８１,８２を固定し、絶縁基板１を反射ケ
ースにすることによって、ＬＥＤチップ８１,８２を固
定する絶縁基板を無くして、その絶縁基板の厚み分、こ
の薄型ＬＥＤドットマトリックスユニットを薄型化する
ことができる。In this way, the LED chips 81 and 82 are fixed on the first metal layer 72, and the insulating substrate 1 is used as a reflection case, thereby eliminating the insulating substrate fixing the LED chips 81 and 82. This thin LED dot matrix unit can be thinned by the thickness of the insulating substrate.
【００３８】また、上記ＬＥＤチップ８１,８２の裏面
と第１金属層７２の面で固定されているので、ＬＥＤチ
ップ８１,８２から第１金属７２への熱伝導率がよくな
り、放熱効率が向上する。Since the LED chips 81 and 82 are fixed to the back surface of the LED chip 81 and 82 and the surface of the first metal layer 72, the heat conductivity from the LED chips 81 and 82 to the first metal 72 is improved, and the heat dissipation efficiency is improved. improves.
【００３９】また、上記絶縁基板７１の貫通穴７０内に
異なる色の光を発するＬＥＤチップ８１,８２を固定し
ているので、２色発光でかつ高精細な薄型ＬＥＤドット
マトリックスユニットを実現することができる。Since the LED chips 81 and 82 for emitting light of different colors are fixed in the through hole 70 of the insulating substrate 71, it is possible to realize a high-definition thin LED dot matrix unit which emits two colors. You can
【００４０】また、上記絶縁基板７１の貫通穴７０内の
側面は、第１金属層７２側に向かって徐々に狭くなるテ
ーパー形状であるので、上記ＬＥＤチップ８１,８２か
ら発せられた光のうち、貫通穴７０の側面と樹脂層７５
に向かって進む光は、上方に向かって反射する。したが
って、上記ＬＥＤチップ８１,８２からの光を有効に活
用して、明るい薄型ＬＥＤドットマトリックスユニット
を実現することができる。Since the side surface of the insulating substrate 71 inside the through hole 70 has a taper shape which gradually narrows toward the first metal layer 72 side, of the light emitted from the LED chips 81 and 82. , The side surface of the through hole 70 and the resin layer 75
Light traveling toward is reflected upward. Therefore, a bright thin LED dot matrix unit can be realized by effectively utilizing the light from the LED chips 81 and 82.
【００４１】また、上記ＬＥＤチップ８１,８２および
金属細線７６,７７の周囲を覆う透明樹脂からなる保護
部６５によって、外部からの応力に対してＬＥＤチップ
８１,８２と金属細線７６,７７が保護される。Further, the LED chip 81, 82 and the thin metal wire 76, 77 are protected against external stress by the protective portion 65 made of a transparent resin covering the periphery of the LED chip 81, 82 and the thin metal wire 76, 77. To be done.
【００４２】上記第１,２,３実施例では、ガラスクロス
エポキシ製の絶縁基板１,５１,７１を用いたが、これに
限らず、絶縁基板の材料として、液晶ポリマー,ポリエ
ステル系シート,テフロン系シートおよびベーク基板等
を用いてもよい。In the first, second, and third embodiments, the insulating substrates 1, 51, 71 made of glass cloth epoxy are used. However, the material of the insulating substrate is not limited to this, and liquid crystal polymer, polyester sheet, Teflon are used. A system sheet and a bake substrate may be used.
【００４３】また、上記１,２,３実施例では、第１金属
層２a,２b,２c,５２,７２は、銅フィルム上にニッケル
層を形成したのち後、そのニッケル層上に銀層を形成し
たが、銀層の代りに金またはパラジウムの層を形成して
もよい。また、上記第１金属層はこれに限らず、ＬＥＤ
チップを固定して支持できる強度と導電性を有する材料
であればよい。Further, in the above-mentioned 1, 2 and 3 embodiments, the first metal layers 2a, 2b, 2c, 52 and 72 are formed by forming a nickel layer on the copper film and then forming a silver layer on the nickel layer. Although formed, a gold or palladium layer may be formed in place of the silver layer. In addition, the first metal layer is not limited to this, and LED
Any material may be used as long as it has strength and conductivity so that the chip can be fixed and supported.
【００４４】また、上記１,２,３実施例では、第２金属
層４a,４b,４c,５３,７３は、絶縁基板１,５１,７１に
銅フィルムを張り合わせたが、絶縁基板にメッキ,蒸着
等により銅またはニッケル層を形成し、その上にニッケ
ル,銀の層を形成してもよい。また、上記銀の代りに金
またはパラジウムを用いてもよいのは勿論である。Further, in the above-mentioned 1, 2 and 3 embodiments, the second metal layers 4a, 4b, 4c, 53 and 73 are obtained by plating the insulating substrate 1, 51 and 71 with a copper film. A copper or nickel layer may be formed by vapor deposition or the like, and a nickel or silver layer may be formed thereon. Of course, gold or palladium may be used instead of the above silver.
【００４５】また、上記第１実施例では、絶縁基板１の
貫通穴１０,１０,…のテーパー形状を金型を用いて成形
したが、貫通穴のテーパー形状の形成方法はこれに限ら
ず、レーザー加工により絶縁基板を焼いて自然にテーパ
ー形状を形成したり、薬品によるエッチングにより形成
してもよい。Further, in the first embodiment, the tapered shape of the through holes 10, 10, ... Of the insulating substrate 1 is formed by using a mold, but the method of forming the tapered shape of the through hole is not limited to this. The insulating substrate may be burned by laser processing to naturally form a tapered shape, or may be formed by etching with a chemical.
【００４６】また、上記第２,第３実施例では、貫通穴
６０,７０に透明樹脂からなる保護部６５,８５を形成し
たが、着色された半透明樹脂で保護部を形成してもよ
い。In the second and third embodiments, the protective portions 65 and 85 made of transparent resin are formed in the through holes 60 and 70, but the protective portions may be made of colored translucent resin. .
【００４７】[0047]
【発明の効果】以上より明らかなように、請求項１の発
明の薄型ＬＥＤドットマトリックスユニットは、マトリ
ックス状に配列された複数の貫通穴を有する絶縁基板の
裏面側に、上記複数の貫通穴の裏面側の開口部分を塞ぐ
第１金属層を設け、上記絶縁基板の上記複数の貫通穴内
に、夫々、複数のＬＥＤチップを第１金属層に導通する
ように固定し、上記複数の貫通穴の開口部分を除く上記
絶縁基板の表面側に第２金属層を設けて、上記複数のＬ
ＥＤチップと第２金属層とを金属細線により接続したも
のである。As is apparent from the above, the thin LED dot matrix unit according to the invention of claim 1 has a plurality of through holes on the back surface side of the insulating substrate having a plurality of through holes arranged in a matrix. A first metal layer for closing the opening portion on the back surface side is provided, and a plurality of LED chips are fixed in the plurality of through holes of the insulating substrate so as to be electrically connected to the first metal layer. A second metal layer is provided on the front surface side of the insulating substrate except for the opening, and the plurality of L
The ED chip and the second metal layer are connected by a thin metal wire.
【００４８】したがって、請求項１の発明の薄型ＬＥＤ
ドットマトリックスユニットによれば、上記ＬＥＤチッ
プの一方を金属細線を用いずに第１金属層に固定すると
共に、ＬＥＤチップの他方を金属細線を介して絶縁基板
の貫通穴の外側の第２金属層に接続することによって、
絶縁基板の貫通穴を小さくでき、ＬＥＤチップの配列ピ
ッチを小さくできるので、高精細な薄型ＬＥＤドットマ
トリックスユニットを実現することができる。また、上
記ＬＥＤチップは、絶縁基板の裏面側に設けられた第１
金属層に固定され、その第１金属層の下には絶縁基板が
無いから薄型化できる。さらに、上記ＬＥＤチップの裏
面側を第１金属層上に固定し、ＬＥＤチップから第１金
属層への熱伝導率がよいので、放熱効率がよくなって、
信頼性が向上する。Therefore, the thin LED according to the invention of claim 1
According to the dot matrix unit, one of the LED chips is fixed to the first metal layer without using the metal thin wire, and the other of the LED chips is connected to the second metal layer outside the through hole of the insulating substrate through the metal thin wire. By connecting to
Since the through holes of the insulating substrate can be made small and the LED chip arrangement pitch can be made small, a high-definition thin LED dot matrix unit can be realized. In addition, the LED chip is provided on the back side of the insulating substrate.
Since it is fixed to the metal layer and there is no insulating substrate under the first metal layer, the thickness can be reduced. Furthermore, since the back surface side of the LED chip is fixed on the first metal layer and the thermal conductivity from the LED chip to the first metal layer is good, heat dissipation efficiency is improved,
Improves reliability.
【００４９】また、請求項２の発明の薄型ＬＥＤドット
マトリックスユニットは、請求項１に記載の薄型ＬＥＤ
ドットマトリックスユニットにおいて、上記絶縁基板の
各貫通穴内に、夫々、２以上のＬＥＤチップを上記第１
金属層に導電するように固定すると共に、上記２以上の
ＬＥＤチップに対応して、上記絶縁基板の表面側に互い
に絶縁された２以上の第２金属層を設けたものである。The thin LED dot matrix unit according to the invention of claim 2 is the thin LED according to claim 1.
In the dot matrix unit, two or more LED chips are provided in the through holes of the insulating substrate, respectively.
In addition to being fixed so as to be conductive to the metal layer, two or more second metal layers insulated from each other are provided on the front surface side of the insulating substrate corresponding to the two or more LED chips.
【００５０】したがって、請求項２の発明の薄型ＬＥＤ
ドットマトリックスユニットによれば、上記絶縁基板の
貫通穴内に異なる色の光を発する２以上のＬＥＤチップ
を第１金属層に固定した場合、一つの貫通穴内に一つの
ＬＥＤチップを固定するのに比べて、多色発光で高精細
な薄型ＬＥＤドットマトリックスユニットを実現するこ
とができる。Therefore, the thin LED according to the invention of claim 2
According to the dot matrix unit, when two or more LED chips emitting light of different colors are fixed to the first metal layer in the through hole of the insulating substrate, one LED chip is fixed in one through hole as compared with one LED chip. Thus, it is possible to realize a high-definition thin LED dot matrix unit with multicolor emission.
【００５１】また、請求項３の発明の薄型ＬＥＤドット
マトリックスユニットは、請求項１または２に記載の薄
型ＬＥＤドットマトリックスユニットにおいて、上記絶
縁基板の上記複数の貫通穴内の側面は、上記第１金属層
側に向かって徐々に狭くなるテーパー形状にしたもので
ある。A thin LED dot matrix unit according to a third aspect of the present invention is the thin LED dot matrix unit according to the first or second aspect, wherein the side surface inside the plurality of through holes of the insulating substrate is the first metal. The taper shape is gradually narrowed toward the layer side.
【００５２】したがって、請求項３の発明の薄型ＬＥＤ
ドットマトリックスユニットによれば、上記ＬＥＤチッ
プから発せられた光のうち、貫通穴の側面に進む光は、
絶縁基板の表面側の上方に向かって反射する。したがっ
て、上記ＬＥＤチップからの光を有効に活用でき、明る
い薄型ＬＥＤドットマトリックスユニットを実現するこ
とができる。Therefore, the thin LED according to the invention of claim 3
According to the dot matrix unit, of the light emitted from the LED chip, the light traveling to the side surface of the through hole is
It reflects upward on the front surface side of the insulating substrate. Therefore, the light from the LED chip can be effectively used, and a bright thin LED dot matrix unit can be realized.
【００５３】また、請求項４の発明の薄型ＬＥＤドット
マトリックスユニットは、請求項１乃至３のいずれか一
つに記載の薄型ＬＥＤドットマトリックスユニットにお
いて、上記複数のＬＥＤチップおよび上記金属細線の周
囲を覆う樹脂からなる保護部を形成したものである。A thin LED dot matrix unit according to a fourth aspect of the present invention is the thin LED dot matrix unit according to any one of the first to third aspects, in which the plurality of LED chips and the thin metal wires are surrounded. A protective portion made of a covering resin is formed.
【００５４】したがって、請求項４の発明の薄型ＬＥＤ
ドットマトリックスユニットによれば、上記保護部によ
って、外部からの応力に対して複数のＬＥＤチップと金
属細線を保護でき、信頼性が向上する。Therefore, the thin LED according to the invention of claim 4
According to the dot matrix unit, the plurality of LED chips and the thin metal wires can be protected against external stress by the protection section, and reliability is improved.
【図１】 図１はこの発明の第１実施例の薄型ＬＥＤド
ットマトリックスユニットの正面図である。FIG. 1 is a front view of a thin LED dot matrix unit according to a first embodiment of the present invention.
【図２】 図２は図１のII-II線から見た断面図であ
る。FIG. 2 is a sectional view taken along line II-II of FIG.
【図３】 図３は上記薄型ＬＥＤドットマトリックスユ
ニットの裏面図である。FIG. 3 is a rear view of the thin LED dot matrix unit.
【図４】 図４は上記薄型ＬＥＤドットマトリックスユ
ニットの回路図である。FIG. 4 is a circuit diagram of the thin LED dot matrix unit.
【図５】 図５はこの発明の第２実施例の薄型ＬＥＤド
ットマトリックスユニットの正面図である。FIG. 5 is a front view of a thin LED dot matrix unit according to a second embodiment of the present invention.
【図６】 図６は図５のVI−VI線から見た断面図であ
る。6 is a sectional view taken along line VI-VI in FIG.
【図７】 図７はこの発明の第３実施例の薄型ＬＥＤド
ットマトリックスユニットの正面図である。FIG. 7 is a front view of a thin LED dot matrix unit according to a third embodiment of the present invention.
【図８】 図８は図７のＶIII−VIII線から見た断面図
である。FIG. 8 is a sectional view taken along line VIII-VIII in FIG. 7.
【図９】 図９(a)は従来の薄型ＬＥＤドットマトリッ
クスユニットの断面図であり、図９(b)はこの発明の第
１実施例の薄型ＬＥＤドットマトリックスユニットの断
面図である。9 (a) is a sectional view of a conventional thin LED dot matrix unit, and FIG. 9 (b) is a sectional view of a thin LED dot matrix unit according to a first embodiment of the present invention.
【図１０】 図１０(a)は従来の薄型ＬＥＤドットマト
リックスユニットの正面図であり、図１０(b)は上記薄
型ＬＥＤドットマトリックスユニットの側面図である。FIG. 10 (a) is a front view of a conventional thin LED dot matrix unit, and FIG. 10 (b) is a side view of the thin LED dot matrix unit.
【図１１】 図１１(a),(b)は上記薄型ＬＥＤドットマ
トリックスユニットの要部断面図であり、図１１(c)は
この発明の薄型ＬＥＤドットマトリックスユニットの要
部断面図である。11 (a) and 11 (b) are cross-sectional views of main parts of the thin LED dot matrix unit, and FIG. 11 (c) is a cross-sectional view of main parts of the thin LED dot matrix unit of the present invention.
１…絶縁基板、２a,２b,２c…第１金属層、３…ＬＥＤ
チップ、４a,４b,４c…第２金属層、５…金属細線、１
０…貫通穴、１１…導電ペースト。1 ... Insulating substrate, 2a, 2b, 2c ... 1st metal layer, 3 ... LED
Chip, 4a, 4b, 4c ... Second metal layer, 5 ... Metal fine wire, 1
0 ... Through hole, 11 ... Conductive paste.
Claims (4)
穴を有する絶縁基板と、 上記絶縁基板の裏面側に設けられ、上記複数の貫通穴の
裏面側の開口部分を塞ぐ第１金属層と、 上記絶縁基板の上記複数の貫通穴内に、夫々、上記第１
金属層に導通するように固定されたＬＥＤチップと、 上記複数の貫通穴の開口部分を除く上記絶縁基板の表面
側に設けられた第２金属層と、 上記ＬＥＤチップと上記第２金属層とを接続する金属細
線とを備えたことを特徴とする薄型ＬＥＤドットマトリ
ックスユニット。1. An insulating substrate having a plurality of through holes arranged in a matrix, a first metal layer provided on the back surface side of the insulating substrate and closing an opening portion on the back surface side of the plurality of through holes, In each of the plurality of through holes of the insulating substrate, the first
An LED chip fixed so as to be electrically connected to the metal layer, a second metal layer provided on the front surface side of the insulating substrate except the openings of the plurality of through holes, the LED chip and the second metal layer. A thin LED dot matrix unit, comprising:
リックスユニットにおいて、上記絶縁基板の各貫通穴内
に、夫々、２以上のＬＥＤチップを上記第１金属層に導
電するように固定すると共に、上記２以上のＬＥＤチッ
プに対応して、上記絶縁基板の表面側に互いに絶縁され
た２以上の第２金属層を設けたことを特徴とする薄型Ｌ
ＥＤドットマトリックスユニット。2. The thin LED dot matrix unit according to claim 1, wherein two or more LED chips are fixed in each through hole of the insulating substrate so as to be electrically conductive to the first metal layer, and A thin type L characterized in that two or more second metal layers insulated from each other are provided on the surface side of the insulating substrate corresponding to two or more LED chips.
ED dot matrix unit.
ットマトリックスユニットにおいて、上記絶縁基板の上
記複数の貫通穴内の側面は、上記第１金属層側に向かっ
て徐々に狭くなるテーパー形状であることを特徴とする
薄型ＬＥＤドットマトリックスユニット。3. The thin LED dot matrix unit according to claim 1, wherein a side surface of each of the plurality of through holes of the insulating substrate has a tapered shape that gradually narrows toward the first metal layer side. A thin LED dot matrix unit characterized by the following.
薄型ＬＥＤドットマトリックスユニットにおいて、上記
ＬＥＤチップおよび上記金属細線の周囲を覆う樹脂から
なる保護部を形成したことを特徴とする薄型ＬＥＤドッ
トマトリックスユニット。4. The thin LED dot matrix unit according to any one of claims 1 to 3, wherein a protective portion made of a resin covering the LED chip and the thin metal wire is formed. LED dot matrix unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6138600A JPH088463A (en) | 1994-06-21 | 1994-06-21 | Thin type led dot matrix unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6138600A JPH088463A (en) | 1994-06-21 | 1994-06-21 | Thin type led dot matrix unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH088463A true JPH088463A (en) | 1996-01-12 |
Family
ID=15225883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6138600A Pending JPH088463A (en) | 1994-06-21 | 1994-06-21 | Thin type led dot matrix unit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH088463A (en) |
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| JPH11163412A (en) * | 1997-11-25 | 1999-06-18 | Matsushita Electric Works Ltd | Led illuminator |
| GB2361581A (en) * | 2000-04-20 | 2001-10-24 | Lite On Electronics Inc | A light emitting diode device |
| JP2002043632A (en) * | 2000-07-21 | 2002-02-08 | Citizen Electronics Co Ltd | Light emitting diode |
| EP1253650A2 (en) * | 2001-04-25 | 2002-10-30 | Agilent Technologies Inc | Surface-mount type light emitting diode |
| JP2002336275A (en) * | 2001-05-17 | 2002-11-26 | Yoshida Dental Mfg Co Ltd | Dental light irradiator |
| JP2003078219A (en) * | 2001-09-04 | 2003-03-14 | Katsurayama Technol:Kk | Recessed printed wiring board and its manufacturing method |
| WO2003023857A2 (en) * | 2001-09-13 | 2003-03-20 | Lucea Ag | Led-luminous panel and carrier plate |
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| WO2005062382A3 (en) * | 2003-12-02 | 2005-12-08 | 3M Innovative Properties Co | Light emitting diode based illumination assembly |
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1994
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