JPH0322689B2 - - Google Patents

Info

Publication number
JPH0322689B2
JPH0322689B2 JP60140850A JP14085085A JPH0322689B2 JP H0322689 B2 JPH0322689 B2 JP H0322689B2 JP 60140850 A JP60140850 A JP 60140850A JP 14085085 A JP14085085 A JP 14085085A JP H0322689 B2 JPH0322689 B2 JP H0322689B2
Authority
JP
Japan
Prior art keywords
solution
growth
solution storage
jig
reservoir
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60140850A
Other languages
Japanese (ja)
Other versions
JPS622528A (en
Inventor
Noryuki Hirayama
Masaaki Ooshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14085085A priority Critical patent/JPS622528A/en
Publication of JPS622528A publication Critical patent/JPS622528A/en
Publication of JPH0322689B2 publication Critical patent/JPH0322689B2/ja
Granted legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Description

【発明の詳細な説明】 産業上の利用分野 本発明は半導体レーザ等の化合物半導体素子作
成において行なわれる液相エピタキシヤル成長の
液相エピタキシヤル成長溶液の製造装置に関す
る。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an apparatus for producing a liquid phase epitaxial growth solution for liquid phase epitaxial growth performed in the production of compound semiconductor devices such as semiconductor lasers.

従来の技術 従来、液相エピタキシヤル成長は半導体レーザ
等の化合物半導体素子作成において広く行なわれ
ているが、成長の際には必要な半導体材料を所定
の量だけ秤量しなければならない。この秤量作業
は成長毎に行なうとかなりの手間となるため、第
5図に示すような治具を用いて、半導体材料から
一括して多数の成長溶液を製造することが行なわ
れている(特開昭59−89411号公報)。第5図にお
いて11は溶液収納治具、12は溶液収納凹部、
13は補助溶液収納治具、14は補助溶液収納
部、15は溶液溜め、16は成長溶液、17は補
助溶液収納治具用スライド棒、18は溶液溜め用
スライド棒である。第5図を用いて成長溶液の製
造工程を説明すると、まず必要な半導体材料を所
定の量だけ溶液溜め15中に仕込み、飽和温度以
上の温度に昇温して溶解混合し成長溶液16とす
る(第5図a)。この状態で一定時間保つたのち、
溶液溜用スライド棒18によつて溶液溜め15を
補助溶液収納治具13上でスライドさせ、成長溶
液16の一部を補助溶液収納部14中に分配する
(第5図b)。次に補助溶液収納治具用スライド棒
17によつて補助溶液収納部14が溶液収納凹部
12上にくるように補助溶液収納治具13をスラ
イドさせ、前工程における補助溶液収納部14中
の成長溶液16の一部を溶液収納凹部12中に移
動させる(第5図c)。続いて補助溶液収納治具
用スライド棒17により補助溶液収納部が溶液収
納凹部12上外にくるように補助溶液収納治具1
3をスライドさせ前述の工程をくり返して溶液溜
め15中の成長溶液16を溶液収納凹部12中に
分配する。
BACKGROUND ART Conventionally, liquid phase epitaxial growth has been widely used in the production of compound semiconductor devices such as semiconductor lasers, but during growth, a predetermined amount of the necessary semiconductor material must be weighed. This weighing operation would be quite time-consuming if performed for each growth, so a jig as shown in Figure 5 is used to manufacture a large number of growth solutions from semiconductor materials at once (in particular Publication No. 1989-89411). In FIG. 5, 11 is a solution storage jig, 12 is a solution storage recess,
13 is an auxiliary solution storage jig, 14 is an auxiliary solution storage section, 15 is a solution reservoir, 16 is a growth solution, 17 is a slide rod for the auxiliary solution storage jig, and 18 is a slide rod for the solution reservoir. To explain the manufacturing process of the growth solution using FIG. 5, first, a predetermined amount of the necessary semiconductor material is charged into the solution reservoir 15, and the temperature is raised to a temperature higher than the saturation temperature to dissolve and mix to form the growth solution 16. (Figure 5a). After remaining in this state for a certain period of time,
The solution reservoir 15 is slid on the auxiliary solution storage jig 13 using the solution reservoir slide rod 18, and a portion of the growth solution 16 is distributed into the auxiliary solution storage section 14 (FIG. 5b). Next, the auxiliary solution storage jig 13 is slid using the auxiliary solution storage jig slide rod 17 so that the auxiliary solution storage part 14 is placed above the solution storage recess 12, and the growth in the auxiliary solution storage part 14 in the previous step is removed. A portion of the solution 16 is moved into the solution storage recess 12 (FIG. 5c). Next, use the slide rod 17 for the auxiliary solution storage jig to move the auxiliary solution storage jig 1 so that the auxiliary solution storage part is above and outside the solution storage recess 12.
3 and repeat the above steps to distribute the growth solution 16 in the solution reservoir 15 into the solution storage recess 12.

発明が解決しようとする問題点 以上説明した製造工程では、飽和温度以上の温
度に昇温して一定時間保つた際、溶液溜め15中
の成長溶液16が完全には均一に溶解混合しない
ため、分配される各成長溶液間で組成のばらつき
が生じないように補助溶液収納部14を介して少
量ずつ分配しているが、成長溶液16の一部を溶
液収納凹部12中へ分配するのに3回のスライド
工程を要する。すべて分配するにはこの3回のス
ライド工程を何回も繰返さなければならず、成長
溶液16の量が増すにつれて繰返しも増え、煩雑
になる。また成長溶液16の分配が終了する最後
のスライド工程においては必らずしも各補助溶液
収納部14中に等量ずつ分配されないので、結局
分配された各成長溶液間でばらつきが出る。これ
は、これらの成長溶液を用いて行なつて得られる
液相エピタキシヤル成長層間で膜厚のばらつきを
大きくするため不具合となる。
Problems to be Solved by the Invention In the manufacturing process described above, when the temperature is raised to the saturation temperature or higher and maintained for a certain period of time, the growth solution 16 in the solution reservoir 15 does not dissolve and mix completely and uniformly. Although the growth solution 16 is distributed little by little through the auxiliary solution storage part 14 so as not to cause variations in composition among the growth solutions to be distributed, it takes three It requires several sliding steps. These three sliding steps must be repeated many times to dispense everything, and as the amount of growth solution 16 increases, the number of repetitions increases and becomes more complicated. Furthermore, in the final sliding step where the distribution of the growth solution 16 is completed, the same amount is not necessarily distributed into each of the auxiliary solution storage sections 14, resulting in variations among the distributed growth solutions. This is a problem because it increases the variation in film thickness between the liquid phase epitaxially grown layers obtained using these growth solutions.

本発明は以上のような問題点を解決すべく製造
工程におけるスライド工程を少なくして煩雑さを
なくし、それぞれ組成が均一かつ重量のばらつき
がなく、したがつて、それらを用いて行なつて得
られる液相エピタキシヤル成長層間で組成及び膜
厚が均一となる液相エピタキシヤル成長溶液の製
造方法を提供することを目的とする。
In order to solve the above-mentioned problems, the present invention reduces the number of sliding steps in the manufacturing process to eliminate complexity, has a uniform composition and no variation in weight, and is therefore advantageous when used. An object of the present invention is to provide a method for producing a liquid phase epitaxial growth solution in which the composition and film thickness are uniform between the liquid phase epitaxial growth layers.

問題点を解決するための手段 本発明は複数の溶液収納貫通孔を有する溶液収
納治具と前記溶液収納治具に対して摺動可能で溶
液収納治具を上下からはさみ、該上部及び下部に
前記複数の溶液収納貫通孔に対応する複数の上部
貫通孔及び下部凹部を有し、また溶液溜め中に仕
込んだ半導体材料の成長溶液上ずみを除去する上
ずみ除去部と上ずみ受け凹部を有する基台と、前
記基台上で摺動可能で下部に溶液分配用の貫通孔
を有する溶液溜めとを用いて液相エピタキシヤル
成長溶液の製造を行なうことにより上記目的を達
成するものである。
Means for Solving the Problems The present invention includes a solution storage jig having a plurality of solution storage through holes, a solution storage jig that is slidable with respect to the solution storage jig, and is sandwiched from above and below, and the solution storage jig is sandwiched between the upper and lower parts. It has a plurality of upper through-holes and a lower recess corresponding to the plurality of solution storage through-holes, and also has a top removal part and a top drop receiving recess for removing the top of the growth solution of the semiconductor material charged in the solution reservoir. The above object is achieved by manufacturing a liquid phase epitaxial growth solution using a base and a solution reservoir that is slidable on the base and has a through hole in its lower part for distributing the solution.

作 用 本発明は上記構成により、基台上で成長溶液を
収納した溶液溜めをスライドする際、特に組成の
不均一となつている成長溶液上ずみを基台の上ず
み除去部を介して除去して成長溶液を溶液収納治
具の溶液収納貫通孔に分配するために、分配され
た成長溶液間で組成のばらつきをなくし、かつ溶
液収納治具に対して基台をスライドすることによ
つて成長溶液を溶液収納貫通孔の容積いつぱいに
確実に収納できるために分配された各成長溶液の
重量を等しくできるようにしたものである。
Effects According to the above-mentioned structure, when the solution reservoir containing the growth solution is slid on the base, the top of the growth solution, which has a non-uniform composition, is removed through the top removal part of the base. In order to distribute the growth solution to the solution storage through holes of the solution storage jig, it is possible to eliminate variations in composition among the distributed growth solutions and by sliding the base with respect to the solution storage jig. In order to reliably store the growth solution in the full volume of the solution storage through-hole, the weight of each distributed growth solution can be made equal.

実施例 以下に図面を参照して本発明の一実施例を詳細
に説明する。第1図は本発明の一実施例において
用いる治具の断面図である。21は基台、22は
溶液収納治具、23は溶液溜め、24は成長溶
液、25は溶液収納治具支持棒、26は溶液溜め
スライド棒、27は基台スライド棒、28は基
板、29は上板、30は貫通孔、31は凹部、3
2は上ずみ除去部、33は上ずみ受け凹部であ
る。製造工程を説明すると、まず第1図に示すよ
うな各位置関係において、溶液溜め23中に必要
な半導体材料を所定の量だけ仕込み飽和温度以上
に昇温して溶解混合し、成長溶液24とする。こ
こで一定時間保ち成長溶液の組成が均一となるよ
うにする。一般に成長溶液を大量に仕込んだ場
合、一定時間中には組成が完全には均一となら
ず、位置的に特に溶液上部が不均一になつてい
る。本実施例では以下の工程において説明するよ
うに溶液溜め中の成長溶液を各溶液収納貫通孔へ
分配する前に成長溶液上ずみを除去することによ
つて解決している。
Embodiment An embodiment of the present invention will be described in detail below with reference to the drawings. FIG. 1 is a sectional view of a jig used in an embodiment of the present invention. 21 is a base, 22 is a solution storage jig, 23 is a solution reservoir, 24 is a growth solution, 25 is a solution storage jig support rod, 26 is a solution reservoir slide rod, 27 is a base slide rod, 28 is a substrate, 29 3 is a top plate, 30 is a through hole, 31 is a recess, 3
Reference numeral 2 denotes a sag removing portion, and 33 a sagging receiving recess. To explain the manufacturing process, first, in each positional relationship as shown in FIG. do. This is maintained for a certain period of time so that the composition of the growth solution becomes uniform. Generally, when a large amount of growth solution is charged, the composition does not become completely uniform over a certain period of time, and the position, particularly in the upper part of the solution, becomes non-uniform. In this embodiment, as explained in the following steps, the problem is solved by removing the top of the growth solution before distributing the growth solution in the solution reservoir to each solution storage through hole.

以下の工程を説明すると溶液溜めスライド溝2
6により溶液溜め23を第2図に示すごとくスラ
イドさせて基台21の上板29の貫通孔30をへ
て溶液収納治具21の溶液収納貫通孔及び基台2
1の基板28に設けた凹部31へ成長溶液を分配
するとともに基台21の上ずみ除去部32によつ
て上ずみは基台21の上ずみ受け凹部33へ除去
される。第3図は溶液溜め23のスライドが終了
した状態で、図に示すように成長溶液24が分配
される。このように分配された個々の成長溶液の
重量を調べて見ると溶液溜め23のスライドスピ
ードや溶液の粘性により下部においてすきまがで
きてしまうために分配量にばらつきが出て重量を
均等に分配できない。しかし、本実施例では第4
図に示すごとく基台21を基台スライド棒27に
よつてスライドし、第3図で分配された成長溶液
の上下部を除去することにより、溶液収納貫通孔
の容積いつぱいに満たされた成長溶液を得ること
ができる。以上のようにして得られた各成長溶液
は一様な重量を持ち、しかも前述のように溶液溜
め中にある成長溶液の組成が不均一になつている
上ずみを除去して分配しているので組成もばらつ
きがなく、これらの成長溶液を用いた液相エピタ
キシヤル層では膜厚、組成とも非常に均一なもの
が得られた。
To explain the following process, the solution reservoir slide groove 2
6, slide the solution reservoir 23 as shown in FIG.
The growth solution is distributed to the recesses 31 provided in the substrate 28 of 1, and the growth is removed by the growth removal section 32 of the base 21 to the growth receiving recess 33 of the base 21. FIG. 3 shows a state in which the sliding of the solution reservoir 23 has been completed, and the growth solution 24 is dispensed as shown in the figure. When examining the weight of each individual growth solution distributed in this way, it is found that due to the slide speed of the solution reservoir 23 and the viscosity of the solution, a gap is created at the bottom, resulting in variations in the amount distributed and the weight cannot be distributed evenly. . However, in this example, the fourth
As shown in the figure, by sliding the base 21 with the base slide rod 27 and removing the upper and lower parts of the growth solution distributed as shown in Figure 3, the growth solution is filled to the full volume of the solution storage through hole. can be obtained. Each of the growth solutions obtained in the above manner has a uniform weight, and as mentioned above, the growth solution in the solution reservoir is distributed by removing the top layer that makes the composition of the solution non-uniform. Therefore, there was no variation in composition, and liquid phase epitaxial layers using these growth solutions were extremely uniform in both thickness and composition.

発明の効果 以上のように本発明は分配前の成長溶液の特に
組成が不均一となつている溶液上部を除去したの
ち成長溶液を分配し、さらに分配された成長溶液
の重量を、粘性によつて収納部とすきまがあいた
部分を除去することにより均等にすることが可能
であることから、本発明を用いて製造した成長溶
液を用いた液相エピタキシヤル成長においては組
成の均一でかつ膜厚ばらつきのごく少ない良質の
エピタキシヤル層を再現性よく得られ、また本発
明の溶液製造工程は2回のスライド工程を必要と
するだけで容易であり、その効果は大なるもので
ある。
Effects of the Invention As described above, the present invention distributes the growth solution after removing the upper part of the growth solution, in particular where the composition is non-uniform, and further calculates the weight of the distributed growth solution based on the viscosity. Since it is possible to achieve uniformity by removing the space between the storage part and the gap, liquid-phase epitaxial growth using the growth solution produced using the present invention has a uniform composition and a uniform film thickness. A high-quality epitaxial layer with very little variation can be obtained with good reproducibility, and the solution manufacturing process of the present invention is easy, requiring only two sliding steps, and its effects are great.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例において用いる治具
の断面図、第2図〜第4図は第1図の治具を用い
た製造工程を説明する図、第5図は従来用いられ
ていた治具における製造工程を説明する図であ
る。 21……基台、22……溶液収納治具、23…
…溶液溜め、24……成長溶液、25……溶液収
納治具支持棒、26……溶液溜め用スライド棒、
27……基台スライド棒、28……基板、29…
…上板、30……貫通孔、31……凹部、32…
…上ずみ除去部、33……上ずみ受け凹部。
Fig. 1 is a cross-sectional view of a jig used in one embodiment of the present invention, Figs. 2 to 4 are diagrams explaining the manufacturing process using the jig shown in Fig. 1, and Fig. 5 is a cross-sectional view of a jig used in an embodiment of the present invention. It is a figure explaining the manufacturing process in the jig. 21... Base, 22... Solution storage jig, 23...
...Solution reservoir, 24...Growth solution, 25...Solution storage jig support rod, 26...Sliding rod for solution reservoir,
27... Base slide rod, 28... Board, 29...
...Upper plate, 30...Through hole, 31...Recess, 32...
... Swelling removal part, 33... Swelling receiving recessed part.

Claims (1)

【特許請求の範囲】 1 複数の溶液収納貫通孔を有する溶液収納治具
と、前記溶液収納治具に対して摺動可能で溶液収
納治具を上下部からはさむ上板と基板を有し、前
記上板及び基板の前記複数の溶液収納貫通孔に対
応する位置に各々複数の貫通孔と凹部を設けた基
台と、前記上板の上を摺動可能で溶液分配用の貫
通孔を有する溶液溜めを有する液相エピタキシヤ
ル成長溶液の製造装置。 2 基台は溶液溜め中に仕込んだ半導体材料の成
長溶液上ずみを除去する上ずみ除去部を有する特
許請求の範囲第1項記載の液相エピタキシヤル成
長溶液の製造装置。
[Scope of Claims] 1. A solution storage jig having a plurality of solution storage through holes, and an upper plate and a substrate that are slidable relative to the solution storage jig and sandwich the solution storage jig from above and below, A base having a plurality of through holes and recesses at positions corresponding to the plurality of solution storage through holes of the upper plate and the substrate, and a through hole for distributing a solution that is slidable on the upper plate. A liquid phase epitaxial growth solution manufacturing device having a solution reservoir. 2. The apparatus for manufacturing a liquid phase epitaxial growth solution according to claim 1, wherein the base has a top removal section for removing top of the growth solution of the semiconductor material charged in the solution reservoir.
JP14085085A 1985-06-27 1985-06-27 Manufacture device for liquid-phase epitaxial growth solution Granted JPS622528A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14085085A JPS622528A (en) 1985-06-27 1985-06-27 Manufacture device for liquid-phase epitaxial growth solution

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14085085A JPS622528A (en) 1985-06-27 1985-06-27 Manufacture device for liquid-phase epitaxial growth solution

Publications (2)

Publication Number Publication Date
JPS622528A JPS622528A (en) 1987-01-08
JPH0322689B2 true JPH0322689B2 (en) 1991-03-27

Family

ID=15278184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14085085A Granted JPS622528A (en) 1985-06-27 1985-06-27 Manufacture device for liquid-phase epitaxial growth solution

Country Status (1)

Country Link
JP (1) JPS622528A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7297149B2 (en) 2005-04-14 2007-11-20 Ethicon Endo-Surgery, Inc. Surgical clip applier methods
US7740641B2 (en) 2005-04-14 2010-06-22 Ethicon Endo-Surgery, Inc. Clip applier with migrational resistance features
CN103889359B (en) 2011-10-19 2017-02-15 伊西康内外科公司 Clip applier adapted for use with a surgical robot

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5515316U (en) * 1978-07-17 1980-01-31
JPS5651158A (en) * 1979-10-03 1981-05-08 Ricoh Co Ltd Reproducing method of binary picture
JPS5886723A (en) * 1981-11-18 1983-05-24 Nec Corp Growing device for semiconductor crystal
JPS59101823A (en) * 1982-12-03 1984-06-12 Nec Corp Liquid-phase epitaxial growth device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5515316U (en) * 1978-07-17 1980-01-31
JPS5651158A (en) * 1979-10-03 1981-05-08 Ricoh Co Ltd Reproducing method of binary picture
JPS5886723A (en) * 1981-11-18 1983-05-24 Nec Corp Growing device for semiconductor crystal
JPS59101823A (en) * 1982-12-03 1984-06-12 Nec Corp Liquid-phase epitaxial growth device

Also Published As

Publication number Publication date
JPS622528A (en) 1987-01-08

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