JPH03220780A - Thin film element of amorphous silicon hydride - Google Patents
Thin film element of amorphous silicon hydrideInfo
- Publication number
- JPH03220780A JPH03220780A JP2015871A JP1587190A JPH03220780A JP H03220780 A JPH03220780 A JP H03220780A JP 2015871 A JP2015871 A JP 2015871A JP 1587190 A JP1587190 A JP 1587190A JP H03220780 A JPH03220780 A JP H03220780A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- film
- thin film
- type
- hydrogenated amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 34
- 239000010409 thin film Substances 0.000 title claims abstract description 22
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 title abstract description 7
- 239000010408 film Substances 0.000 claims abstract description 63
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000011253 protective coating Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 2
- -1 hydride silicon Chemical compound 0.000 abstract 1
- 238000000605 extraction Methods 0.000 description 11
- 230000001681 protective effect Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 4
- 239000011651 chromium Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、水素化非晶質（アモルファス）シリコンから
成るタイオード、フォトダイオード等の薄膜素子に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to thin film elements such as diodes and photodiodes made of hydrogenated amorphous silicon.
［従来の技術］
水素化非晶質シリコン（ａ−３ｔ：Ｈ）がら成るフォト
ダイオードは公知である。このフォトタイオードは、絶
縁基板の上に下部電極、Ｎ型の水素化非晶質シリコン膜
、■型（真性）の水素化非晶質シリコン膜、Ｐ型の水素
化非晶質シリコン膜、透明の上部電極を順次に形成し、
これ等の少なくとも側面に眉間絶縁膜（絶縁被覆）を設
け、この上に引き出し電極を設けることによって得られ
る。[Prior Art] Photodiodes made of hydrogenated amorphous silicon (a-3t:H) are known. This photodiode includes a lower electrode on an insulating substrate, an N-type hydrogenated amorphous silicon film, a ■-type (intrinsic) hydrogenated amorphous silicon film, a P-type hydrogenated amorphous silicon film, A transparent upper electrode is sequentially formed,
This can be obtained by providing a glabella insulating film (insulating coating) on at least the side surfaces of these and providing an extraction electrode thereon.
［発明が解決しようとする課題］
ところで、従来の眉間絶縁膜は、ポリイミド樹脂又はＳ
ｉＯ□又は５ｉＮｘ（窒化シリコン）で形成されている
ので、信頼性の高い薄膜素子を容易に製造することか困
難であった。即ち、ポリイミド樹脂を使用する場合には
、キエア温度が３５０〜４５０℃と高温であるがゆえに
、水素化非晶質シリコンの特性劣化がまぬがれなかった
。また、５ｉｏｔ又はＳｉＮｘを使用する場合には電極
や水素化非晶質シリコンのための真空成膜装置の他に、
ＳｉＯ２やＳｉＮｘの真空成膜装置を用意することが必
要になり、製造が面倒であった。[Problems to be Solved by the Invention] By the way, the conventional glabella insulating film is made of polyimide resin or S
Since it is formed of iO□ or 5iNx (silicon nitride), it has been difficult to easily manufacture a highly reliable thin film element. That is, when polyimide resin is used, the characteristics of hydrogenated amorphous silicon cannot be avoided because the air temperature is as high as 350 to 450°C. In addition, when using 5iot or SiNx, in addition to the vacuum film forming equipment for electrodes and hydrogenated amorphous silicon,
It was necessary to prepare a vacuum film forming apparatus for SiO2 or SiNx, which made manufacturing troublesome.
そこで、本発明の目的は、信頼性の高い水素化非晶質シ
リコン薄膜素子を容易に製造することができる方法を提
供することにある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a method for easily manufacturing a highly reliable hydrogenated amorphous silicon thin film element.
［課題を解決するための手段］
上記目的を達成するための本発明は、第１及び第２の電
極と、前記第１及び第２の電極の間に配置されたＰＩＮ
層又はＰＮ層を含む水素化非晶質シリコン薄膜と、前記
水素化非晶質シリコン薄膜の少なくとも側面を覆うよう
に配設された保護被覆とから成る水素化非晶質シリコン
薄膜素子において、前記保護被覆が実質的に真性半導体
とみなすことができる水素化非晶質シリコンから成る水
素化非晶質シリコン薄膜素子に係わるものである。[Means for Solving the Problems] The present invention for achieving the above object includes first and second electrodes and a PIN disposed between the first and second electrodes.
A hydrogenated amorphous silicon thin film element comprising a hydrogenated amorphous silicon thin film including a hydrogenated amorphous silicon thin film or a PN layer, and a protective coating disposed to cover at least a side surface of the hydrogenated amorphous silicon thin film. The present invention relates to a hydrogenated amorphous silicon thin film device in which the protective coating essentially consists of hydrogenated amorphous silicon that can be considered an intrinsic semiconductor.
なお、真性半導体からなる保護被覆の」二にＰ型又はＮ
型の水素化非晶質シリコン膜を設けることができる。Note that the protective coating made of an intrinsic semiconductor is P-type or N-type.
A type of hydrogenated amorphous silicon film can be provided.
［作用コ
本発明に従う実質的に真性半導体（■型）とみなすこと
かできる水素化非晶質シリコンの体積固有抵抗率は１０
〜１０１１（Ωｃｍ＋）であり、表面を保護すること及
び第１及び第２の電極間を十分に電気的に分離すること
ができる。この保護被覆は、素子本体部と同一材料であ
るので、同一の製造装置によって容易に形成し得る。[Function] The volume specific resistivity of hydrogenated amorphous silicon, which can be considered as a substantially intrinsic semiconductor (type) according to the present invention, is 10.
~1011 (Ωcm+), and can protect the surface and sufficiently electrically isolate the first and second electrodes. Since this protective coating is made of the same material as the element main body, it can be easily formed using the same manufacturing equipment.
請求項２に従って、Ｐ型又はＮ型の膜を設ける場合には
、Ｐ型又はＮ型膜とＩ型膜との間が逆バイアス状態にな
るようにＰ型膜又はＮ型膜を選択する。これにより、Ｐ
型膜又はＮ型膜の上の電極と内部とが良好に分離される
。According to claim 2, when a P-type or N-type film is provided, the P-type or N-type film is selected so that a reverse bias state is created between the P-type or N-type film and the I-type film. As a result, P
The electrode on the type film or the N-type film and the inside are well separated.
［第１の実施例〕
次に、第１図及び第２図を参照して本発明の第１の実施
例に係わる一次元イメージセンサのフォトダイオード及
びその製造方法を説明する。[First Embodiment] Next, a photodiode of a one-dimensional image sensor and a method for manufacturing the same according to a first embodiment of the present invention will be described with reference to FIGS. 1 and 2.
まず、第１図（Ａ）に示すようにガラス基板１上に下部
電極（第１の電極）２と、Ｎ型の水素化非晶質シリコン
膜（以下、Ｎ型膜と言う〉３と、■型（真性半導体）の
水素化非晶質シリコン膜（以下、Ｉ型膜と言う）４と、
Ｐ型の水素化非晶質シリコン膜（以下、Ｐ型膜と言う）
５と、透明電極（第２の電極又は上部電極）６とから戒
る素子本体部を形成した。First, as shown in FIG. 1(A), a lower electrode (first electrode) 2 and an N-type hydrogenated amorphous silicon film (hereinafter referred to as N-type film) 3 are placed on a glass substrate 1. ■ type (intrinsic semiconductor) hydrogenated amorphous silicon film (hereinafter referred to as I type film) 4;
P-type hydrogenated amorphous silicon film (hereinafter referred to as P-type film)
5 and a transparent electrode (second electrode or upper electrode) 6 to form an element main body.
各部の製造方法を詳しく述べると、下部電極２はクロム
（Ｃｒ）を膜厚１０００オングストロームにスパッタリ
ングすることによって形成した。To describe in detail the manufacturing method of each part, the lower electrode 2 was formed by sputtering chromium (Cr) to a thickness of 1000 angstroms.
Ｎ型膜３、■型膜４、及びＰ型膜５はグロー放電法によ
り夫々形成した。更に詳細には、Ｎ型膜３はＳ ｉ Ｈ
４、Ｐ）（３及びＨ２の混合ガスを用いて約３００オン
グストロームの膜厚に形成し、Ｐ（リン）のドープ量を
０．６％とした。１型膜４は、Ｓ ｉＨ４、Ｈ２の混合
ガスを用いて膜厚約５０００オングストロームに形成し
、導電型決定不純物は勿論添加しなかった。Ｐ型膜５は
、５ｉＨ−、Ｂ２ Ｈ６、Ｈ２の混合ガスを用いて膜厚
約３００オングストロームに形成し、Ｂ（ボロン）のド
ープ量を０．６％とした。The N-type film 3, the ■-type film 4, and the P-type film 5 were each formed by a glow discharge method. More specifically, the N-type film 3 is S i H
4. The film was formed to a thickness of about 300 angstroms using a mixed gas of SiH4 and H2, and the doping amount of P (phosphorus) was 0.6%. The P-type film 5 was formed to a thickness of about 5000 angstroms using a mixed gas, and no impurity to determine the conductivity type was added.The P-type film 5 was formed to a thickness of about 300 angstroms using a mixed gas of 5iH-, B2 H6, and H2. The doping amount of B (boron) was set to 0.6%.
透明電極６は電子ビーム蒸着法によりＴＴＯ（酸化イン
ジウムスズ）を膜厚９００オンダストロームに蒸着する
ことによって得た。なお、下部型＠２、Ｎ型膜３、■型
膜４、Ｐ型膜５、透明電極６のパターンニングは同時に
行った。The transparent electrode 6 was obtained by depositing TTO (indium tin oxide) to a thickness of 900 angstroms by electron beam evaporation. Note that the patterning of the lower mold@2, the N-type film 3, the ■-type film 4, the P-type film 5, and the transparent electrode 6 was performed at the same time.
次に、第１図（Ｂ）に示す■型膜から成る眉間絶縁膜と
して機能する保護［７を■型膜４と同様にグロー放電法
によって形成した。更に詳細には、この保護膜７はＳｉ
Ｈ＜、Ｈ２の混合ガスを用いて約１μｍの膜厚に形威し
、導電型決定不純物をノンドープとした。しかる後、透
明電極６が露出するようにパターンニングした。なお、
保護１１！７は電気的分離及び表面保護を達成するため
にＮ型１１！３と■型膜４とＰ型膜５と透明電極６の側
面の全部を覆い、且つ下部電極２の側面の大部分を覆っ
ている。Next, the protection [7] which functions as an insulating film between the eyebrows and is made of a ■-shaped film shown in FIG. 1(B) was formed by the glow discharge method in the same manner as the ■-shaped film 4. More specifically, this protective film 7 is made of Si.
A mixed gas of H<, H2 was used to form a film with a thickness of about 1 μm, and conductivity type determining impurities were not doped. After that, patterning was performed so that the transparent electrode 6 was exposed. In addition,
The protection 11!7 covers all of the sides of the N-type 11!3, the ■-type film 4, the P-type film 5, and the transparent electrode 6, and covers the entire side surface of the lower electrode 2 in order to achieve electrical isolation and surface protection. covering part.
次に、第１図（Ｃ）に示す透明電極６の引き出し電［！
８を形成した。なお、この引き出し電極８は、スパッタ
リング法でＣｒ膜を膜厚６００オングストロームに形成
し、続いてＡ１膜を膜厚１μｍに形成し、その後パター
ニングを行うことによって形成した。この引き出し電極
８は第２図に示すように複数のフォトダイオードに対し
て共通に接続されている。Next, the extraction voltage of the transparent electrode 6 shown in FIG. 1(C) [!
8 was formed. The extraction electrode 8 was formed by forming a Cr film to a thickness of 600 angstroms by sputtering, followed by forming an A1 film to a thickness of 1 μm, and then patterning. This extraction electrode 8 is commonly connected to a plurality of photodiodes as shown in FIG.
完成したフォトタイオードを一次元イメージセンサの走
査回路を用いて駆動させたところ、下部電極２と引き出
し電＠８との間に短絡による不良は発生せず、且つイメ
ージセンサとして十分な出力波形が得られた。When the completed photodiode was driven using the scanning circuit of a one-dimensional image sensor, no defects due to short circuits occurred between the lower electrode 2 and the extraction voltage @8, and the output waveform was sufficient as an image sensor. Obtained.
また、保護膜７か十分な電気的分離及び表面安定化（パ
ッシベーション）機能を有するか否かを判定するために
、保護膜７の形成前と後とにおいて、薄膜素子（フォ）
〜ダイオード）に−３■の逆バイアス電圧を印加し、暗
状態（光入力無しの状態）におけるリーク電流を測定し
、これ等を比較したところ、差はなかった。In addition, in order to determine whether the protective film 7 has sufficient electrical isolation and surface stabilization (passivation) functions, the thin film element (foil) was tested before and after the formation of the protective film 7.
A reverse bias voltage of -3■ was applied to the diode), the leakage current in a dark state (no light input) was measured, and when these were compared, there was no difference.
［第２の実施例］
次に、第３図に示す第２の実施例のイメージセンサを説
明する。但し、第３図及び後述する第４図において、第
１図と共通ずる部分には同一の符号を付し、その説明を
省略する。この実施例では、■を膜から成る保護膜７の
上にＰ型膜９が設けられている。このフォトダイオード
は、逆バイアス状態で使用されるので、下部電極２を基
準にして上部電極６及び引き出し電極８には負電位が与
えられる。従って、■型膜から成る保護１１！７とＰ型
膜９との間が逆バイアス状態となり、下部型＃１２と引
き出し電極８との間の絶縁分離が良好に達成され、リー
ク電流が小さくなる。[Second Example] Next, the image sensor of the second example shown in FIG. 3 will be described. However, in FIG. 3 and FIG. 4, which will be described later, the same parts as those in FIG. In this embodiment, a P-type film 9 is provided on a protective film 7 made of a 3-layer film. Since this photodiode is used in a reverse bias state, a negative potential is applied to the upper electrode 6 and the extraction electrode 8 with respect to the lower electrode 2. Therefore, a reverse bias state is created between the protection 11!7 consisting of the ■-type film and the P-type film 9, and good insulation separation between the lower mold #12 and the extraction electrode 8 is achieved, and the leakage current is reduced. .
［第３の実施例］
第４図に示す第３の実施例のフォトダイオードは、下か
ら上に向かっ゛ζＰ型１１！５、■型膜４、Ｎ型膜３の
順に配置されている６又、保護膜７の上にＮ型膜１０が
設けられている。この実施例のフォトダイオードも逆バ
イアスで使用されるので、下部電極２を基準にして上部
電極６及び引き出し電極８には正の電位が与えられる。[Third Embodiment] The photodiode of the third embodiment shown in FIG. Further, an N-type film 10 is provided on the protective film 7. Since the photodiode of this embodiment is also used with a reverse bias, a positive potential is applied to the upper electrode 6 and the extraction electrode 8 with the lower electrode 2 as a reference.
このため、■型膜から成る保護膜７とＮ型ＷＡ１０との
間は逆バイアス状態となり、下部電極２と引き出し電極
８との間の電気的分離が良好に達成され、リーク電流が
小さくなる。Therefore, a reverse bias state is created between the protective film 7 made of the ■-type film and the N-type WA 10, and good electrical isolation between the lower electrode 2 and the extraction electrode 8 is achieved, and leakage current is reduced.
［変形例］
本発明は上述の実施例に限定されるものでなく、例えば
次の変形が可能なものである。[Modifications] The present invention is not limited to the above-described embodiments, and, for example, the following modifications are possible.
（１） 上部電極６と引き出し電極８を一体に形成する
ことができる。(1) The upper electrode 6 and the extraction electrode 8 can be formed integrally.
（２） フォー・タイオードに限ることなく、整流ダイ
オード、容量としして使用するダイオード等にも適用可
能である。(2) The invention is not limited to four diodes, but can also be applied to rectifier diodes, diodes used as capacitors, etc.
［発明の効果コ
上述のように、本発明によれば、保護被覆が薄膜素子の
本体部と同一の水素化非晶質シリコンであるので、容易
に形成することが可能になる。[Effects of the Invention] As described above, according to the present invention, since the protective coating is made of the same hydrogenated amorphous silicon as the main body of the thin film element, it can be easily formed.
請求項２によれば、保護被覆におけるＩＰ又はＩＮ間を
逆バイアス状態にして良好な分離を達成することができ
る。According to claim 2, good separation can be achieved by putting the IP or IN in the protective coating into a reverse bias state.
第１図（Ａ）（Ｂ）（Ｃ）は本発明の実施例に係わるフ
ォトダイオードを第２図のＩ−Ｉ線によって製造工程順
に示す断面図、
第２図は第１図のフォトタイオードの平面図、第３図は
第２の実施例のフォトダイオードを示す断面図、
第４図は第３の実方拒例のフォトダイオードを示す断面
図である。
２・・・下部電極、３・・・Ｎ型膜、４・・・■型膜、
５・・・Ｐ型膜、６・・・上部電極、７・・・ 保護膜
、８・・・引き出し電極、９・・・Ｐ型膜、１０・・・
Ｎ型膜。1(A), 1(B), and 1(C) are cross-sectional views showing a photodiode according to an embodiment of the present invention along the line I-I in FIG. 2 in the order of manufacturing steps. 3 is a sectional view showing the photodiode of the second embodiment, and FIG. 4 is a sectional view showing the photodiode of the third real rejection example. 2... Lower electrode, 3... N-type film, 4... ■-type film,
5... P-type film, 6... Upper electrode, 7... Protective film, 8... Extraction electrode, 9... P-type film, 10...
N-type membrane.
Claims (1)
ＰＮ層を含む水素化非晶質シリコン薄膜と、 前記水素化非晶質シリコン薄膜の少なくとも側面を覆う
ように配設された保護被覆とから成る水素化非晶質シリ
コン薄膜素子において、 前記保護被覆が実質的に真性半導体とみなすことができ
る水素化非晶質シリコンから成ることを特徴とする水素
化非晶質シリコン薄膜素子。 ［２］更に、前記真性半導体とみなすことができる水素
化非晶質シリコンの上にＰ型又はＮ型の水素化非晶質シ
リコン膜が形成されていることを特徴とする水素化非晶
質シリコン薄膜素子。[Scope of Claims] [1] A hydrogenated amorphous silicon thin film including first and second electrodes, a PIN layer or a PN layer disposed between the first and second electrodes, and the hydrogen A hydrogenated amorphous silicon thin film element comprising a protective coating disposed to cover at least a side surface of a hydrogenated amorphous silicon thin film, the protective coating comprising a hydrogenated amorphous silicon thin film that can be substantially regarded as an intrinsic semiconductor. A hydrogenated amorphous silicon thin film device characterized by being made of high quality silicon. [2] Further, a hydrogenated amorphous silicon film characterized in that a P-type or N-type hydrogenated amorphous silicon film is formed on the hydrogenated amorphous silicon that can be regarded as an intrinsic semiconductor. Silicon thin film element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015871A JPH03220780A (en) | 1990-01-25 | 1990-01-25 | Thin film element of amorphous silicon hydride |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015871A JPH03220780A (en) | 1990-01-25 | 1990-01-25 | Thin film element of amorphous silicon hydride |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03220780A true JPH03220780A (en) | 1991-09-27 |
| JPH0576192B2 JPH0576192B2 (en) | 1993-10-22 |
Family
ID=11900865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015871A Granted JPH03220780A (en) | 1990-01-25 | 1990-01-25 | Thin film element of amorphous silicon hydride |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03220780A (en) |
-
1990
- 1990-01-25 JP JP2015871A patent/JPH03220780A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0576192B2 (en) | 1993-10-22 |
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