JPS58115853A - Manufacture of image sensor - Google Patents
Manufacture of image sensorInfo
- Publication number
- JPS58115853A JPS58115853A JP56212538A JP21253881A JPS58115853A JP S58115853 A JPS58115853 A JP S58115853A JP 56212538 A JP56212538 A JP 56212538A JP 21253881 A JP21253881 A JP 21253881A JP S58115853 A JPS58115853 A JP S58115853A
- Authority
- JP
- Japan
- Prior art keywords
- type layer
- image sensor
- amorphous silicon
- leakage current
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052737 gold Inorganic materials 0.000 claims abstract description 3
- 239000010931 gold Substances 0.000 claims abstract description 3
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 3
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 3
- 239000010948 rhodium Substances 0.000 claims abstract description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims abstract description 3
- 230000002265 prevention Effects 0.000 claims description 15
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000969 carrier Substances 0.000 abstract description 4
- 230000008020 evaporation Effects 0.000 abstract description 4
- 229910052796 boron Inorganic materials 0.000 abstract description 3
- 238000001259 photo etching Methods 0.000 abstract description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 2
- 238000005566 electron beam evaporation Methods 0.000 abstract description 2
- 239000011521 glass Substances 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 2
- 239000011574 phosphorus Substances 0.000 abstract description 2
- 238000001017 electron-beam sputter deposition Methods 0.000 abstract 1
- -1 etc. Inorganic materials 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 238000003475 lamination Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 238000003860 storage Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- MGDOJPNDRJNJBK-UHFFFAOYSA-N ethylaluminum Chemical compound [Al].C[CH2] MGDOJPNDRJNJBK-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Abstract
Description
【発明の詳細な説明】
本発明は可視光又は赤外光等の光信号を電気変換するセ
ンサがホトダイオードから成るイメージセンサの製造方
法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing an image sensor in which a sensor that electrically converts an optical signal such as visible light or infrared light is a photodiode.
本発明はホトダイオードと積層して成るもれ電流防止ダ
イオードに優れた特性をもつダイオードの製造方法を提
供するものである。The present invention provides a method for manufacturing a leakage current prevention diode that is laminated with a photodiode and has excellent characteristics.
従来ファクシミリ送信機の光電変換素には、ＣＯＤある
いはＭＯＳなどのＩＣセンサが使用されている。Conventionally, an IC sensor such as COD or MOS is used as a photoelectric conversion element in a facsimile transmitter.
しかしセンサが小型・高密度であるためレンズ光学系に
よシ原稿を縮少させる必要があシ、装置の小型化が困難
でしかも高価格である欠点を有している。However, since the sensor is small and has a high density, it is necessary to reduce the size of the document using a lens optical system, which makes it difficult to miniaturize the device and is expensive.
そこで硫化ガドミウム（ｃｄｓ）や非晶質シリコンの光
導電素子又は非晶質シリコンのホトダイオードを用い、
導光用に集束性光ファイバー素子等を用いるイメージセ
ンサの研究が進められている０ｃｄｓは感度が高く、大
面積化が容易である反面、膜の均一性が悪い、緑色から
赤色の光に対する感度が低い、光のオン・オフに対する
応答速度が遅い、毒性を有する等積さの欠点を有してい
る。Therefore, using a photoconductive element made of gadmium sulfide (CDS) or amorphous silicon, or a photodiode made of amorphous silicon,
0CDS, which is currently being researched into image sensors that use focusing optical fiber elements for light guiding, has high sensitivity and can be easily made into large areas, but has poor film uniformity and sensitivity to light from green to red. It has the drawbacks of low response speed to light on/off, and toxic isovolume.
非晶質シリコン、微結晶シリコン、多結晶シリコン等よ
シ形成されるホトダイオード並びにもれ電流防止ダイオ
ードを積層して成るイメージセンサは前記欠点を有して
いない特性の優れたイメージセンサであるが、該もれ電
流防止ダイオードにＰＮ接合又はＰＩＮ接合を用いると
、順方向電圧このとき（ホトダイオードには逆方向に電
圧が印加される。）を大きくしないと電流が取り出せな
い。又、該ＰＮ接合等では少数キャリアーの注入による
蓄積効果があり、イメージセンサの応答時間が遅くなる
等の欠点を有していた。An image sensor formed by laminating a photodiode formed of amorphous silicon, microcrystalline silicon, polycrystalline silicon, etc. and a leakage current prevention diode is an image sensor with excellent characteristics that does not have the above-mentioned drawbacks. When a PN junction or a PIN junction is used as the leakage current prevention diode, current cannot be extracted unless the forward voltage is increased (a voltage is applied to the photodiode in the reverse direction). In addition, the PN junction and the like have an accumulation effect due to injection of minority carriers, resulting in drawbacks such as slow response time of the image sensor.
本発明はかかる欠点を除去したもので、印加電圧が小さ
く、もれ電流防止ダイオードの少数キャリアーの蓄積効
果の非常に小書なイメージセンサを提供するものである
。The present invention eliminates such drawbacks and provides an image sensor that requires a small applied voltage and has a very small accumulation effect of minority carriers in a leakage current prevention diode.
最初に、イメージセンサの動作について簡単に説明する
。First, the operation of the image sensor will be briefly explained.
第１図はイメージセンサの等価回路を示す図で、Ｒ，、
Ｒ，・・・・・・Ｒｎは共通電極、 Ｃｔ、 Ｃｍ・・
・・・・ＩＯｍは個別電極ｅ Ｄｔ 、 Ｄ嘗””Ｄｍ
、 Ｄｍｔ、＠ Ｄｍｔ”Ｄｍｍ・・・Ｄｍｎはもれ電
流防止ダイオードｒｌｌ、 ｒｌｌ・・・ｒ□。Figure 1 is a diagram showing the equivalent circuit of an image sensor, R,...
R,...Rn is a common electrode, Ct, Cm...
・・・・IOm is an individual electrode e Dt , D嘗””Dm
, Dmt, @Dmt"Dmm...Dmn are leakage current prevention diodes rll, rll...r□.
ｒｓｔ・・・ｒｌｌｌｌ・・・ｒｌ・・・ｒａｍはホト
ダイオード、ＲＬは負荷抵抗、Ｅは電源であるｏ ｒｓ
・・・ｒａｍ上に集束光ファイバー等により導光された
画家がｒＩ・・・ｒ□により電気信号に変換される。こ
のとき共通電極Ｒ１をオンし、個別電極Ｃ＝、 ＣＩ・
・・・・・Ｃｍを順次オンすることにより、ｒｌ・・・
ｒａｍの出力信号が検知される。rst...rllll...rl...ram is a photodiode, RL is a load resistance, E is a power supply or rs
...The painter's light guided by a focusing optical fiber or the like onto the RAM is converted into an electrical signal by rI...r□. At this time, the common electrode R1 is turned on, and the individual electrodes C=, CI・
...By turning on Cm sequentially, rl...
The output signal of the ram is detected.
以下これを繰り返し、１走査分の信号を得ていく。Thereafter, this process is repeated to obtain signals for one scan.
このとき必要に応じて電源Ｅによりｒｌ・・・ｒｍｍ
Ｋ電圧が印加される。このとき、もれ電流防止ダイオー
ドはたとえばＲ１，ＣｔをオンしｒＩＩの出力を取シ出
す時、ｒｍｔ・・・ｒａｎ による種々出力がｒｏ
の出力の上にのるのを防ぎ、正確なｒｌ哀の出力を堆シ
出す働きをする。At this time, if necessary, use the power supply E to adjust rl...rmm.
K voltage is applied. At this time, when the leakage current prevention diode turns on R1 and Ct and takes out the output of rII, the various outputs due to rmt...ran are ro
It works to prevent the output from being overlaid on the output of the rl file and to output the correct rl output.
第２図に従来の非晶質シリコン、微結晶シリコン、多結
晶シリコンより成るイメージセンサにおいて通常用いら
れる非晶質シリコンイメージセンサの断面構造を示す。FIG. 2 shows a cross-sectional structure of an amorphous silicon image sensor commonly used in conventional image sensors made of amorphous silicon, microcrystalline silicon, and polycrystalline silicon.
２１はガラス等の絶縁性基板、２２は共通電極、２５．
２７はボロン等を混入したプラズマＣＶＤ法よ多形成さ
れる非晶質シリコン層（ｐ層）、２４．２６は混入を行
わない非晶質シリコン層（１層）、２５はリン等を混入
した非結晶シリコン層（ｎ層）、２８は個別電極である
。光は個別電極側より入射され、＃ｐ層２５゜＃、ｉ層
２４及び該ｎ層２５より成るもれ電流防止ダイオードと
該ｐ層２７．該１層２６及び該ｎ層２５より成るホトダ
イオードの積層構造よりイメージセンサが形成される。21 is an insulating substrate such as glass, 22 is a common electrode, 25.
27 is an amorphous silicon layer (p layer) formed by plasma CVD method with boron etc. mixed in, 24.26 is an amorphous silicon layer (1 layer) without any mixing, 25 is a layer mixed with phosphorus etc. The amorphous silicon layer (n layer) 28 is an individual electrode. Light is incident from the individual electrode side, and a leakage current prevention diode consisting of the #p layer 25°#, the i layer 24, and the n layer 25, and the p layer 27. An image sensor is formed from a laminated structure of photodiodes consisting of the one layer 26 and the n layer 25.
このとき、該共通電極２２は該もれ電流防止ダイオード
の正電極となるＯすなわちもれ電流防止ダイオードが順
方向になる時電気的な正側になる電極を正電極とするＯ
該共通電極は従来アルミニウム、モリブデン、ニッケル
、クロム、ステンレス等非晶質シリコン、微結晶シリコ
ン、多結晶シリコンとオーシック接合を行う金属によっ
て製造されていた。At this time, the common electrode 22 becomes the positive electrode of the leakage current prevention diode (O), that is, the electrode that becomes electrically positive when the leakage current prevention diode is in the forward direction is the positive electrode.
The common electrode has conventionally been made of a metal such as aluminum, molybdenum, nickel, chromium, stainless steel, etc., which forms an orthic bond with amorphous silicon, microcrystalline silicon, or polycrystalline silicon.
本発明は該正電極をシ■ットキー接合を形成する金属に
よシ製造し従来の欠点を改善した。The present invention improves the drawbacks of the prior art by fabricating the positive electrode from a metal that forms a Schottky junction.
以下、本発明により製造したイメージセンナの製造方法
について詳しく説明を行う。Hereinafter, a method for manufacturing an image sensor manufactured according to the present invention will be explained in detail.
本実施例のイメージセンサの断面構造は第２図に示した
従来のイメージセンナと同様な構造であり、前記正電極
すなわち前記共通電極の製造方法以外はその製造方法も
同様である。具体的には、前記個別電極２８は、アルミ
ニウム、クロム、ニッケル、ステンレス等の導電性材料
を蒸着し、必要な形状にホトエツチングプロセスで形成
し、前記ｐ、ｉ、ｎ層の主たる製造方法は、水素、ヘリ
ウム、ネオン、アルゴン、キセノン等をペースガスとし
、モノシラン、四弗化シラン、ジクロルシラン郷をキャ
リアーガスとする所定ガスを排気系を具備する真空槽内
に導入して所定の内圧とし、紋真空檜内に放電を起こさ
しめ、該ガスを分解し、所定温度に加熱された基板上に
非晶質シリコン層を析出するプラズマＣＶＤ法を用いた
。このとき、周期律表第厘−ｂ族並び第ｖ−ｂ族を混入
しない非晶質シリコン層（１層）が得られる。又、該非
晶質シリコン中に周期律表第■−ｂ族を混入するｐ層は
前記ガス導入時にジボラン（Ｂ、Ｈ，）、 ）リエチル
アルミニウム等ドーピング−ガスを前記ベースガスとと
もに導入し得られる。又、咳非晶質シリコン中に周期律
表第ｖ−ｂ族を混入するｎ層はホスフィン、アルシン等
ドーピングガスを同様に導入し得られる。本実施では前
記もれ電流防止ダイオードを製造する際にｐ層を設けた
が、ｐ層を設けなくとも同様の効果が得られる事を確認
した。The cross-sectional structure of the image sensor of this embodiment is similar to that of the conventional image sensor shown in FIG. 2, and the manufacturing method thereof is also the same except for the manufacturing method of the positive electrode, that is, the common electrode. Specifically, the individual electrodes 28 are formed by depositing a conductive material such as aluminum, chromium, nickel, stainless steel, etc. into the required shape by a photoetching process, and the main manufacturing method for the p, i, and n layers is as follows. A predetermined gas containing hydrogen, helium, neon, argon, xenon, etc. as a pace gas and monosilane, tetrafluorosilane, dichlorosilane as a carrier gas is introduced into a vacuum chamber equipped with an exhaust system to achieve a predetermined internal pressure, A plasma CVD method was used in which a discharge is caused in a vacuum cylinder to decompose the gas and deposit an amorphous silicon layer on a substrate heated to a predetermined temperature. At this time, an amorphous silicon layer (one layer) is obtained that does not contain any of Group B-B and Group V-B of the periodic table. In addition, for the p layer in which Group Ⅲ-b of the periodic table is mixed into the amorphous silicon, a doping gas such as diborane (B, H, ), ethylaluminum, etc. may be introduced together with the base gas at the time of introducing the gas. It will be done. Further, an n layer in which a group V-B of the periodic table is mixed into amorphous silicon can be obtained by similarly introducing a doping gas such as phosphine or arsine. In this embodiment, a p-layer was provided when manufacturing the leakage current prevention diode, but it was confirmed that the same effect could be obtained without providing a p-layer.
本発明による前記共通電極は基板上にあらかじめクロム
金属を真空蒸着し、その上に金、白金、バナジウム、ロ
ジウム又はイリジウム等を１０λ〜１０００λ程度真空
加熱蒸着、電子ビーム蒸着、又はスパクタ蒸着し、その
後必要な形状にホトエツチングし製造した。The common electrode according to the present invention is made by vacuum-depositing chromium metal on a substrate in advance, and then depositing gold, platinum, vanadium, rhodium, iridium, etc. on the substrate by vacuum heating evaporation, electron beam evaporation, or sputter evaporation for about 10λ to 1000λ, and then It was manufactured by photoetching into the required shape.
第３図に従来のもれ電流防止ダイオード並びに本発明に
よるもれ電流防止ダイオードのダイオード特性を示す。FIG. 3 shows diode characteristics of a conventional leakage current prevention diode and a leakage current prevention diode according to the present invention.
１ａは従来の順方向のダイオード特性、 ２＆は従来の
逆方向特性、１ｂは本実施例のダイオード特性、 ２ｂ
は本実施例の逆方向特性ｌｎＩ は電流の対数値、■
は印加電圧である。1a is the conventional forward diode characteristic, 2& is the conventional reverse characteristic, 1b is the diode characteristic of this embodiment, 2b
is the reverse characteristic lnI of this example, is the logarithm of the current, ■
is the applied voltage.
ダイオードの順方向特性は通常以下の式であら１
わせる。The forward characteristics of a diode are usually expressed by the following formula:
make it happen
Ｉ＝ＩｏＸＡＸｅｘｐ（−ｉＭ） 但しＶ２１００ｍ
ＶＫＴ
両辺対数をとると
ｉｎ Ｉ ＝ Ｉｎ Ｉｏ ｍ Ａ ＋−１−ｖＫＴ
■は印加電圧、工は電流＋ Ｉｏは電流密度、Ａは素子
面積、ｑは単位電荷、にはボルツアン定数、Ｔは測定時
の給体温度、ｎはダイオードクオリイテイ係数と呼ばれ
ダイオード特性の目やすとなり、理想的には１である。I=IoXAXexp(-iM) However, V2100m
VKT If we take the logarithm on both sides, in I = In Iom A +-1-vKT ■ is the applied voltage, D is the current + Io is the current density, A is the element area, q is the unit charge, is the Boltzian constant, and T is the measurement value The feed temperature at that time, n, is called the diode quality coefficient and serves as a measure of the diode characteristics, and ideally it is 1.
従来のもれ電流防止ダイオードはｎが１．７〜２．１程
度であるが、本実施例のもれ電流ダイオードけｎが１，
５以下で、通常の印加電圧で１ケタ程度大きな電流の得
られる優れたダイオードである。又、注入キャリアーの
蓄積効果が滅シ従来のイメージセンサよシも応答速度が
５倍以上高速化できる。Conventional leakage current prevention diodes have n of about 1.7 to 2.1, but the leakage current diode of this embodiment has n of about 1.
5 or less, it is an excellent diode that can obtain about one digit large current with normal applied voltage. Furthermore, the accumulation effect of injected carriers is eliminated, and the response speed can be increased by more than five times compared to conventional image sensors.
本発明によれば高速で印加電圧の小さなイメージセンサ
が得られ、ファクシミリやビデオカメラ等に応用でき有
用である。According to the present invention, a high-speed image sensor with a small applied voltage can be obtained, which is useful for applications such as facsimiles and video cameras.
第１図はイメージセンサの等価回路である。
第２図は従来のイメージセンサの断面図である。
第５図は従来及び本実施例のもれ電流ダイオードの特性
を示す。
以上
第１１１ｎ
第２図
γ
第３図FIG. 1 shows an equivalent circuit of an image sensor. FIG. 2 is a cross-sectional view of a conventional image sensor. FIG. 5 shows the characteristics of the leakage current diodes of the conventional and this embodiment. Above 111n Figure 2 γ Figure 3
Claims (1)
ンより形成されるホトダイオード並びにもれ電流防止ダ
イオードを積層して成るイメージセンサにおいて、該も
れ電流防止ダイオードの正電極を金、白金、バナジウム
、ロジウム、イリジウム等該非晶質シリコン、微結晶シ
リコン又は多結晶シリコンとショットキー接合を形成す
る金属で製造する事を特徴とするイメージセンサの製造
方法０■ In an image sensor formed by laminating a photodiode and a leakage current prevention diode made of amorphous silicon, microcrystalline silicon, or polycrystalline silicon, the positive electrode of the leakage current prevention diode is made of gold, platinum, vanadium, or rhodium. , Iridium, or other metal that forms a Schottky junction with the amorphous silicon, microcrystalline silicon, or polycrystalline silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56212538A JPS58115853A (en) | 1981-12-28 | 1981-12-28 | Manufacture of image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56212538A JPS58115853A (en) | 1981-12-28 | 1981-12-28 | Manufacture of image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58115853A true JPS58115853A (en) | 1983-07-09 |
Family
ID=16624326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56212538A Pending JPS58115853A (en) | 1981-12-28 | 1981-12-28 | Manufacture of image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58115853A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3526166A1 (en) * | 1984-07-23 | 1986-01-30 | Asahi Kasei Kogyo K.K., Osaka | PRINTED REEL UNIT FOR A LOW-DIMENSION ACTUATOR |
| JPS61161752A (en) * | 1985-01-11 | 1986-07-22 | Ricoh Co Ltd | Photoelectric conversion element |
-
1981
- 1981-12-28 JP JP56212538A patent/JPS58115853A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3526166A1 (en) * | 1984-07-23 | 1986-01-30 | Asahi Kasei Kogyo K.K., Osaka | PRINTED REEL UNIT FOR A LOW-DIMENSION ACTUATOR |
| US4658162A (en) * | 1984-07-23 | 1987-04-14 | Asahi Kasei Kogyo Kabushiki Kaisha | Printed coil unit for small size actuator |
| JPS61161752A (en) * | 1985-01-11 | 1986-07-22 | Ricoh Co Ltd | Photoelectric conversion element |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4677289A (en) | Color sensor | |
| CA1168739A (en) | Method of manufacturing photosensors | |
| US6310382B1 (en) | Multicolor sensor | |
| Brown et al. | Visible-blind UV digital camera based on a 32× 32 array of GaN/AlGaN pin photodiodes | |
| JPS55108780A (en) | Thin film solar cell | |
| JP3236624B2 (en) | Photosensitive electronic device, color sensor using the device, and method of manufacturing the device | |
| JPH0652802B2 (en) | Light receiving device | |
| JPH0660845B2 (en) | Color discrimination method | |
| JPS58115853A (en) | Manufacture of image sensor | |
| Zhu et al. | A Novel α-Si (C): H Color Sensor Array | |
| US5942788A (en) | Solid state image sensing device | |
| JPS6322074B2 (en) | ||
| JPH0653537A (en) | Semiconductor light receiving element | |
| JP2001284630A (en) | Semiconductor photoelectric converter element, its use method and manufacturing method | |
| JPS5879756A (en) | Amorphous si image sensor | |
| JPS59143379A (en) | Photoconductor and manufacture thereof | |
| JPS58115852A (en) | Image sensor | |
| JPS6257261B2 (en) | ||
| JPH0323679A (en) | Photoelectric transducer | |
| JPH08153888A (en) | Photoelectric converter and optical sensor employing it | |
| JPS6199387A (en) | Photoelectric conversion element and manufacture thereof | |
| JPH02148773A (en) | Optical sensor | |
| JPS6242447A (en) | Solid-state image pickup device | |
| JPS6161460A (en) | Manufacture of photodetector | |
| JPS60186073A (en) | Photodetector |