JPH0321517B2 - - Google Patents
Info
- Publication number
- JPH0321517B2 JPH0321517B2 JP60012946A JP1294685A JPH0321517B2 JP H0321517 B2 JPH0321517 B2 JP H0321517B2 JP 60012946 A JP60012946 A JP 60012946A JP 1294685 A JP1294685 A JP 1294685A JP H0321517 B2 JPH0321517 B2 JP H0321517B2
- Authority
- JP
- Japan
- Prior art keywords
- graphite
- single crystal
- silicon carbide
- reaction tube
- crystallinity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 27
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 26
- 229910002804 graphite Inorganic materials 0.000 claims description 24
- 239000010439 graphite Substances 0.000 claims description 24
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000001947 vapour-phase growth Methods 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000002524 electron diffraction data Methods 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021382 natural graphite Inorganic materials 0.000 description 1
- 229930014626 natural product Natural products 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60012946A JPS61174198A (ja) | 1985-01-24 | 1985-01-24 | 黒鉛単結晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60012946A JPS61174198A (ja) | 1985-01-24 | 1985-01-24 | 黒鉛単結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61174198A JPS61174198A (ja) | 1986-08-05 |
| JPH0321517B2 true JPH0321517B2 (zh) | 1991-03-22 |
Family
ID=11819444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60012946A Granted JPS61174198A (ja) | 1985-01-24 | 1985-01-24 | 黒鉛単結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61174198A (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0699238B2 (ja) * | 1989-09-18 | 1994-12-07 | 科学技術庁無機材質研究所長 | 黒鉛薄膜を有する金属炭化物とその製造法 |
| FR2956124A1 (fr) * | 2010-02-08 | 2011-08-12 | Centre Nat Rech Scient | Procede de fabrication de graphite monocristallin |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5935092A (ja) * | 1982-08-23 | 1984-02-25 | Sumitomo Electric Ind Ltd | ダイヤモンドの気相合成法 |
| JPS59182300A (ja) * | 1983-03-30 | 1984-10-17 | Mitsubishi Metal Corp | ダイヤモンドの気相合成法 |
-
1985
- 1985-01-24 JP JP60012946A patent/JPS61174198A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5935092A (ja) * | 1982-08-23 | 1984-02-25 | Sumitomo Electric Ind Ltd | ダイヤモンドの気相合成法 |
| JPS59182300A (ja) * | 1983-03-30 | 1984-10-17 | Mitsubishi Metal Corp | ダイヤモンドの気相合成法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61174198A (ja) | 1986-08-05 |
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