JPH03212969A - Ferroelectric device - Google Patents
Ferroelectric deviceInfo
- Publication number
- JPH03212969A JPH03212969A JP873090A JP873090A JPH03212969A JP H03212969 A JPH03212969 A JP H03212969A JP 873090 A JP873090 A JP 873090A JP 873090 A JP873090 A JP 873090A JP H03212969 A JPH03212969 A JP H03212969A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- film
- ferroelectric
- si3n4
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 4
- 230000006866 deterioration Effects 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 2
- 229910002113 barium titanate Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 238000003980 solgel method Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910005091 Si3N Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 1
Landscapes
- Ceramic Capacitors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は強誘電体装置の構造に係り、主として軍使材料
と強誘電体膜界面構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to the structure of a ferroelectric device, and mainly relates to the interfacial structure between a military material and a ferroelectric film.
［従来の技術］
従来、Ｐ Ｚ Ｔ （Ｐ ｂ −Ｚ ｒ −Ｔ ｉ ｆ
ｊ／ｌ化物）に代表される強誘電体装置を例えば半導体
装置に組み込む場合には、ｐｔ電電膜膜上ＰＺＴ膜等の
強誘電体膜を形成し、更に上部電極もＰｔｔ使膜を用い
る場合もあった。[Prior art] Conventionally, P Z T (P b −Z r −T i f
For example, when a ferroelectric device such as a ferroelectric device (J/L compound) is incorporated into a semiconductor device, a ferroelectric film such as a PZT film is formed on a PT film, and a Ptt film is also used for the upper electrode. There was also.
［発明が解決しようとする課題］
しかし、上記従来技術によると強誘電体膜の少な（とも
−主面には高価なｐｔ電極を用いなければならないと言
５課題があった。[Problems to be Solved by the Invention] However, the above-mentioned prior art has five problems, including the need to use an expensive PT electrode on the main surface of the ferroelectric film.
本発明は、かかる従来技術の課題を解決し、Ｐｔ’を極
を用いな（ても良い強誘電体装置の強誘電体と電極との
界面構造を提供する事を目的とする。It is an object of the present invention to solve the problems of the prior art and to provide an interface structure between a ferroelectric and an electrode of a ferroelectric device that does not use Pt' as a pole.
［課題を解決するための手段］
上記課題を解決するために、本発明は、強誘電体装置に
関し、強誘電体膜の一主面又は二主面にＳｉ３Ｎ、を介
してｉｔｍを形成する手段を取る。[Means for Solving the Problems] In order to solve the above problems, the present invention relates to a ferroelectric device, and provides means for forming itm on one or two main surfaces of a ferroelectric film via Si3N. I take the.
［実施例コ 以下、実施例により本発明を詳述する。[Example code] Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図は本発明の一実施例を示すＣ−ＭＯ３半導体装置
に組み込んだ強誘電体装置の断面図である。FIG. 1 is a sectional view of a ferroelectric device incorporated in a C-MO3 semiconductor device showing an embodiment of the present invention.
いま、Ｏ−Ｍ ＯＳ半導体基板が、８１基板１Ｐウエル
又はＮウェル２．ソース３．ドレイン４、Ｓｉ０，５．
ゲート６及びガラス（１）７から成り該基板上に下部電
極８としてｐｔ以外のＰＯ１ｙＳ１やＴｉ、Ｗ、ＴｉＮ
、ＷＳｉ、Ａｔ等をスパッタ法等により形成し、該下部
電極８の上にプラズマＧＩＶＤ法等により５ｉｓＮ＋（
１）９の膜を形成後、Ｉ’ＺＴやＢａＴｉＯ３、Ｐｂ５
Ｇｅ３０Ｈ。Now, the O-MOS semiconductor substrate is 81 substrates 1P well or N well 2. Source 3. Drain 4, Si0,5.
It consists of a gate 6 and glass (1) 7, and a lower electrode 8 on the substrate is made of PO1yS1 other than pt, Ti, W, TiN.
, WSi, At, etc. are formed by sputtering or the like, and 5isN+(
1) After forming the film 9, I'ZT, BaTiO3, Pb5
Ge30H.
Ｂ１４Ｔｉ、Ｏ，、等の強誘電体１０をスパッタ法やゾ
ル・ゲル法により膜として形成し、更に、Ｓ ｉ３Ｎ、
（２１１１を形成後上部電極１２を下部電極１１と同
様の方法、材料にて形成し、ガラス（２）１３を介して
Ａｔ、、等の金属電極を前記下部電極８及び下部電極１
２と接続して成る。A ferroelectric material 10 such as B14Ti, O, etc. is formed as a film by sputtering or sol-gel method, and then Si3N,
(After forming 2111, the upper electrode 12 is formed using the same method and material as the lower electrode 11, and a metal electrode such as At, etc. is connected to the lower electrode 8 and the lower electrode 1 through the glass (2) 13.
It is connected to 2.
本発明によるＳｉ３Ｎ４膜の作用は強誘電体膜とｔｔ極
との反応による強誘電体膜特性の劣化、とりわけリーク
電流の防止であり、Ｓｉ３Ｎ、膜と強誘電体膜との反応
はｐｔと強誘電体膜との反応と同等又はそれ以下に押え
ることができる作用がある。The action of the Si3N4 film according to the present invention is to prevent deterioration of the ferroelectric film properties, especially leakage current, due to the reaction between the ferroelectric film and the tt electrode, and the reaction between the Si3N film and the ferroelectric film is to It has the effect of suppressing the reaction with the dielectric film to a level equal to or lower than that.
［発明の効果コ
本発明により、低コストで劣化の無い強誘電体装置を提
供することができる効果がある。[Effects of the Invention] The present invention has the effect of providing a ferroelectric device at low cost and free from deterioration.
第１図は本発明の一実施例を示す０−ＭＯＳ半導体装置
に組み込んだ強誘電体装置の断面図である。
１・・・・・・・・・Ｓ１基板
２・・・・・・・・・Ｐウェル又はＮウェル３・・・・
・・・・・ソース
４・・・・・・・・・ドレイン
５・・・・・・・・・Ｓ ｉ ０゜
６・・・・・・・・・ゲート
７・・・・・・・・・ガラス（１）
８・・・・・・・・・下部電極
９・・・・・・・・・Ｓｉ３Ｎ、（２１１０・・・・・
・強誘電体
１ ・・・・・・ Ｓｉ ３Ｎ４
２・・・・・・上部電極
３・・・・・・ガラス（２）
４・・・・・・ＡｔFIG. 1 is a cross-sectional view of a ferroelectric device incorporated in an 0-MOS semiconductor device showing one embodiment of the present invention. 1...S1 substrate 2...P well or N well 3...
...Source 4...Drain 5...S i 0゜6...Gate 7...・・Glass (1) 8 ・・・・・ Lower electrode 9 ・・・・・ Si3N, (2110 ・・・
・Ferroelectric material 1...Si 3N4 2...Top electrode 3...Glass (2) 4...At
Claims (1)
を介して電極が形成されて成る事を特徴とする強誘電体
装置。A ferroelectric device characterized in that an electrode is formed on one or two main surfaces of a ferroelectric film via a Si_3N_4 film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP873090A JPH03212969A (en) | 1990-01-18 | 1990-01-18 | Ferroelectric device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP873090A JPH03212969A (en) | 1990-01-18 | 1990-01-18 | Ferroelectric device |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11126080A Division JP2000036565A (en) | 1999-05-06 | 1999-05-06 | Ferroelectric apparatus |
| JP2000127806A Division JP2000307072A (en) | 2000-01-01 | 2000-04-27 | Ferroelectric device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03212969A true JPH03212969A (en) | 1991-09-18 |
Family
ID=11701071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP873090A Pending JPH03212969A (en) | 1990-01-18 | 1990-01-18 | Ferroelectric device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03212969A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100231604B1 (en) * | 1996-12-20 | 1999-11-15 | 김영환 | Manufacturing method of capacitor of semiconductor device |
| KR100398569B1 (en) * | 2000-12-19 | 2003-09-19 | 주식회사 하이닉스반도체 | Method for manufactruing capacitor in semiconductor device |
-
1990
- 1990-01-18 JP JP873090A patent/JPH03212969A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100231604B1 (en) * | 1996-12-20 | 1999-11-15 | 김영환 | Manufacturing method of capacitor of semiconductor device |
| KR100398569B1 (en) * | 2000-12-19 | 2003-09-19 | 주식회사 하이닉스반도체 | Method for manufactruing capacitor in semiconductor device |
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