JPH03203353A - Package of semiconductor device - Google Patents

Package of semiconductor device

Info

Publication number
JPH03203353A
JPH03203353A JP34289089A JP34289089A JPH03203353A JP H03203353 A JPH03203353 A JP H03203353A JP 34289089 A JP34289089 A JP 34289089A JP 34289089 A JP34289089 A JP 34289089A JP H03203353 A JPH03203353 A JP H03203353A
Authority
JP
Japan
Prior art keywords
package
cap
sealing surface
groove
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP34289089A
Other languages
Japanese (ja)
Inventor
Akihiro Yamaguchi
晶大 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP34289089A priority Critical patent/JPH03203353A/en
Publication of JPH03203353A publication Critical patent/JPH03203353A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To relieve the concentration of stress caused by heat applied at the time of packaging, and prevent the generation of cracks in a package by arranging a groove in a glass sealing surface of the package of a semiconductor device. CONSTITUTION:A semiconductor chip 8 is fixed in a recessed part of a package base 1, covered with a cap 2, and sealed with sealing glass 4. In this constitution, a groove 5 for relieving stress is made in the central part of a sealing surface 3 having a width W in the manner in which the groove is aligned to the package base 1 and the cap 2. Thus the sealing surface 3 is divided into an outer region and an inner region by the groove 5, and the area is reduced, so that the stress also becomes one-half. Thereby cracks are hardly generated in the package base 1 and the cap 2.

Description

【発明の詳細な説明】 C産業上の利用分野〕 本発明は半導体装置のパッケージ、特にガラス封止のパ
ッケージに関する。
DETAILED DESCRIPTION OF THE INVENTION C. Industrial Application Field The present invention relates to a package for a semiconductor device, and particularly to a glass-sealed package.

〔従来の技術〕[Conventional technology]

第3図はこの種の従来の半導体装置のパッケージと収容
半導体チップを示す断面図である。第3図において、中
央に半導体チップを固着する凹所を有するパッケージ基
体1の凹所に半導体チップ8を固着後、基体1と同様に
周壁を有するキャップ2を、基体1の封止面に封止ガラ
ス4をはさんで突き合せ重ね、封止ガラス4の溶着によ
り内部を気密に封止しておった。
FIG. 3 is a cross-sectional view showing the package and the accommodated semiconductor chip of this type of conventional semiconductor device. In FIG. 3, after a semiconductor chip 8 is fixed in a recess of a package base 1 having a recess in the center for fixing a semiconductor chip, a cap 2 having a peripheral wall like the base 1 is sealed to the sealing surface of the base 1. They were butted together with the sealing glass 4 in between, and the interior was hermetically sealed by welding the sealing glass 4.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の半導体装置のパッケージは、突き合せの
封止面全面にガラスを溶着しているために、パッケージ
基体およびキャップと封止用ガラスの熱膨張係数の違い
により、封止面に大きな応力が生じる。そのために、パ
ッケージを半田づけによって基板に実装する際の熱応力
により、パッケージにクラックが入りやすいという欠点
を有する。
In the conventional semiconductor device package described above, glass is welded to the entire surface of the butted sealing surface, so the difference in thermal expansion coefficient between the package base, cap, and sealing glass causes large stress on the sealing surface. occurs. Therefore, there is a drawback that the package is likely to crack due to thermal stress when the package is mounted on the board by soldering.

〔課題を解決するための手段〕[Means to solve the problem]

上記課題に対し本発明では、パッケージ基体とキャップ
との突合せ封止面に、応力の集中を緩和するための溝を
設けている。
In order to solve the above problem, the present invention provides a groove in the abutting sealing surface between the package base and the cap to alleviate stress concentration.

〔実施例〕〔Example〕

つぎに本発明を実施例により説明する。 Next, the present invention will be explained by examples.

第1図(a)は本発明の一実施例と収容半導体チップを
示す断面図、同図(b)は同図(a)に示すパッケージ
基体の平面図である。これらの図において、これを第3
図の従来例と比べると、パッケージ基体1の凹所に半導
体チップを固着し、キャップ2をかぶせて、封止ガラス
4により封止していることは同じである。但し本例では
、幅Wを有する周壁土面の封止面3には、幅の中心に沿
って応力緩和用の溝5が基体1とキャップ2の両方に設
けられている。この溝5により、ガラス封止面3は外側
の領域と内側の領域に2分され、一つの領域の面積は分
割前のほぼ半分になり、この面積が小さくなっただけ応
力も半分になり、クラックが入り難くなる。
FIG. 1(a) is a sectional view showing an embodiment of the present invention and a housed semiconductor chip, and FIG. 1(b) is a plan view of the package base shown in FIG. 1(a). In these figures, we refer to this as the third
Compared to the conventional example shown in the figure, the semiconductor chip is fixed in a recess of a package base 1, covered with a cap 2, and sealed with a sealing glass 4, which is the same. However, in this example, in the sealing surface 3 of the peripheral wall soil surface having a width W, a groove 5 for stress relaxation is provided in both the base body 1 and the cap 2 along the center of the width. This groove 5 divides the glass sealing surface 3 into an outer region and an inner region, and the area of one region is approximately half of that before division, and as this area is reduced, the stress is also halved. It becomes difficult to crack.

第2図は本発明の第2の実施例に係るパッケージ基体の
平面図である。第2図において、四角形の凹所を囲む周
壁土面のガラス封止面3の四隅には、鉤状に内外2重の
溝6aと6bが彫られている。図示していないが、キャ
ップの封止面の四隅にも、基体1の溝と対#に溝が彫ら
れているのは、いうまでもない。パッケージに加わる熱
応力は四隅に集中しやすいので、本実施例のように封止
面の四隅に溝が設けられていることにより、四隅の応力
を効果的に緩和することができる。
FIG. 2 is a plan view of a package base according to a second embodiment of the present invention. In FIG. 2, hook-shaped double inner and outer grooves 6a and 6b are carved in the four corners of the glass sealing surface 3 of the peripheral wall surrounding the rectangular recess. Although not shown, it goes without saying that grooves are also carved in the four corners of the sealing surface of the cap in pairs with the grooves of the base body 1. Since the thermal stress applied to the package tends to concentrate at the four corners, by providing grooves at the four corners of the sealing surface as in this embodiment, the stress at the four corners can be effectively alleviated.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、半導体装置のパッケージ
のガラス封止面に溝を有することにより、実装時に加わ
る熱による応力の集中を緩和でき、パッケージにクラッ
クが入りにくくなるという効果がある。
As described above, the present invention has the effect that by providing a groove in the glass sealing surface of a semiconductor device package, stress concentration due to heat applied during mounting can be alleviated, and the package is less likely to crack.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)は本発明の第1の実施例と収容半導体チッ
プを示す断面図、同図(b)は同図(a)に示すパッケ
ージ基体の平面図、第2図は本発明の第2実施例に係る
パッケージ基体の平面図、第3図は従来の半導体装置の
パッケージと収容半導体チップを示す断面図である。 1・・・・・・パッケージ基体、2・・・・・・キャッ
プ、3・・・・・・ガラス封止面、4・・・・・・封止
ガラス、5,6a、6b・・・・・・応力緩和用溝、8
・・・・・・半導体チップ。
FIG. 1(a) is a cross-sectional view showing the first embodiment of the present invention and the accommodated semiconductor chip, FIG. 1(b) is a plan view of the package base shown in FIG. 1(a), and FIG. FIG. 3 is a plan view of a package base according to a second embodiment, and a cross-sectional view showing a conventional semiconductor device package and an accommodated semiconductor chip. DESCRIPTION OF SYMBOLS 1...Package base, 2...Cap, 3...Glass sealing surface, 4...Sealing glass, 5, 6a, 6b... ... Stress relaxation groove, 8
・・・・・・Semiconductor chip.

Claims (1)

【特許請求の範囲】[Claims] 半導体チップが固着されるパッケージ基体と、このパッ
ケージ基体の凹所に半導体チップを固着後前記凹所開口
に蓋をするキャップとを有し、かつ、前記パッケージ基
体とキヤップとの間がガラスにて封止されるガラス封止
の半導体装置のパッケージにおいて、前記ガラス封止の
封止面に応力緩和用の溝が設けられていることを特徴と
する半導体装置のパッケージ。
The package has a package base to which a semiconductor chip is fixed, and a cap that covers an opening of the recess after the semiconductor chip is fixed to a recess of the package base, and a glass is provided between the package base and the cap. 1. A glass-sealed semiconductor device package, characterized in that a stress-relaxing groove is provided in a sealing surface of the glass seal.
JP34289089A 1989-12-29 1989-12-29 Package of semiconductor device Pending JPH03203353A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34289089A JPH03203353A (en) 1989-12-29 1989-12-29 Package of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34289089A JPH03203353A (en) 1989-12-29 1989-12-29 Package of semiconductor device

Publications (1)

Publication Number Publication Date
JPH03203353A true JPH03203353A (en) 1991-09-05

Family

ID=18357306

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34289089A Pending JPH03203353A (en) 1989-12-29 1989-12-29 Package of semiconductor device

Country Status (1)

Country Link
JP (1) JPH03203353A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007258936A (en) * 2006-03-22 2007-10-04 Fujitsu Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007258936A (en) * 2006-03-22 2007-10-04 Fujitsu Ltd Semiconductor device

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