JPH03191550A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH03191550A JPH03191550A JP33200689A JP33200689A JPH03191550A JP H03191550 A JPH03191550 A JP H03191550A JP 33200689 A JP33200689 A JP 33200689A JP 33200689 A JP33200689 A JP 33200689A JP H03191550 A JPH03191550 A JP H03191550A
- Authority
- JP
- Japan
- Prior art keywords
- branch
- circuit block
- line power
- power supply
- supply bus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000011159 matrix material Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置に関し、 方式の半導体装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a semiconductor device, The present invention relates to a semiconductor device of this type.
特にゲートアレー
〔従来の技術〕
従来のゲートアレ一方式の半導体装置は、第2区に示す
ように、半導体基板1の上に行列状に配列して設けた内
部ゲート2と、内部ゲート2を選択的に結線して設けた
回路ブロック3と、回路ブロック3に電力を供給するた
めの′枠状に設けたAu層からなる主幹電源バス4と、
内部ゲート2のそれぞれの上に配置して主幹電源バス4
と回路ブロック3との間を接続する支線電源バス5を備
えて構成される。In particular, gate array [prior art] In a conventional gate array one-type semiconductor device, as shown in the second section, internal gates 2 are arranged in rows and columns on a semiconductor substrate 1, and internal gates 2 are selected. a main power supply bus 4 made of a frame-shaped Au layer for supplying power to the circuit block 3;
The main power bus 4 is placed above each of the internal gates 2.
and a branch power supply bus 5 that connects between the circuit block 3 and the circuit block 3.
上述した従来の半導体装置は、内部ゲートの集積度が高
くなり、回路ブロックへ供給する電力が増大するため電
力供給用の電源バスは、Au層の様に大電流を流せる材
料を用いて強化した設計がされている。しかし、この電
源バスは、品種による内部ゲートの使用率、内部ゲート
の配置が考慮されないため、内部ゲートの使用率が低い
回路ブロックの場合にも、Au層によって強化した太い
配線の設計がなされ、製造工程において、Auめっきの
Auの使用量が多くなり製造コストが内部ゲートの使用
率に無関係で高いという欠点がある。In the conventional semiconductor devices mentioned above, the degree of integration of internal gates has increased, and the power supplied to the circuit blocks has increased, so the power supply bus for power supply has been strengthened using a material that can flow a large current, such as an Au layer. It is designed. However, this power supply bus does not take into account the usage rate of internal gates and the placement of internal gates depending on the product type, so even in the case of a circuit block with a low usage rate of internal gates, a thick wiring reinforced with an Au layer is designed. In the manufacturing process, there is a drawback that the amount of Au used in Au plating is large, and the manufacturing cost is high regardless of the usage rate of the internal gate.
本発明のゲートアレー半導体装置は、半導体基板上に行
列状に配列して設けた内部ゲートと、前記内部ゲートを
選択的に結線して設けた回路ブロックと、前記回路ブロ
ックに電力を供給するための主幹電源バスと、前記主幹
電源バスと前記回路ブロックとの間を接続する支線電源
バスを備えた半導体装置において、前記支線電源バスが
前記回路ブロックに要する電流容量に比例した配線幅を
有している。The gate array semiconductor device of the present invention includes internal gates arranged in rows and columns on a semiconductor substrate, a circuit block provided by selectively connecting the internal gates, and a circuit block for supplying power to the circuit block. In a semiconductor device comprising a main power supply bus and a branch power supply bus connecting between the main power supply bus and the circuit block, the branch power supply bus has a wiring width proportional to the current capacity required for the circuit block. ing.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図は本発明の一実施例のレイアウト図である。FIG. 1 is a layout diagram of an embodiment of the present invention.
第11図に示すように、半導体基板1の上に行列状に配
列して設けた内部ゲート2と、内部ゲート2を選択的に
結線して設けた回路ブロック(図面状で平行斜線を記入
した領域)3と、回路ブロック3に電力を供給するため
の枠状に設けたAu層からなる主幹電源バス4と、回路
ブロック3のそれぞれに要する電流容量に比例した配線
幅を有するAu層からなる支線電源バス5t!:備えて
構成される。As shown in FIG. 11, internal gates 2 are arranged in rows and columns on a semiconductor substrate 1, and a circuit block is provided by selectively connecting internal gates 2 (parallel diagonal lines are drawn in the drawing). area) 3, a main power supply bus 4 consisting of a frame-shaped Au layer for supplying power to the circuit blocks 3, and an Au layer having a wiring width proportional to the current capacity required for each circuit block 3. Branch line power bus 5 tons! : Prepared and configured.
ここで、支線電源バス5は回路ブロック3を形成してい
る内部ゲート2の領域にのみ電流容量に比例した幅の支
線電源バス5を設けており、回路ブロックを形成してい
ない内部ゲート2の領域には支線電源バス5を設けてい
ないため、支線電源バス5に使用されるAuの使用量を
節減できる。Here, the branch power supply bus 5 is provided with a width proportional to the current capacity only in the area of the internal gate 2 forming the circuit block 3, and the width of the branch power supply bus 5 is proportional to the current capacity. Since the branch power bus 5 is not provided in the area, the amount of Au used for the branch power bus 5 can be reduced.
以上説明したように本発明は、ゲートアレ一方式の半導
体装置で内部ゲートの回路ブロックに要する電流容量に
比例した支線電源バスを設けることにより、半導体チッ
プ面積に対するA 0層の領域が減少し、Au使用量が
減少して、製造コストをさげることができるという効果
を有する。As explained above, the present invention reduces the area of the A0 layer relative to the semiconductor chip area by providing a branch power supply bus proportional to the current capacity required for the circuit block of the internal gate in a gate array type semiconductor device. This has the effect of reducing the amount used and reducing manufacturing costs.
第1図は本発明の一実施例のレイアウト図である。第2
図は、従来の半導体装置の一例を示す14791〜図で
ある。
1・・・半導体基板、2・・・内部ゲート、3・・・回
路ブロック、4・・・主幹電源バス、5・・・支線電源
バス。FIG. 1 is a layout diagram of an embodiment of the present invention. Second
The figures are diagrams 14791 to 14791 showing an example of a conventional semiconductor device. DESCRIPTION OF SYMBOLS 1... Semiconductor board, 2... Internal gate, 3... Circuit block, 4... Main power supply bus, 5... Branch power supply bus.
Claims (1)
前記内部ゲートを選択的に結線して設けた回路ブロック
と、前記回路ブロックに電力を供給するための主幹電源
バスと、前記主幹電源バスと前記回路ブロックとの間を
接続する支線電源バスを備えた半導体装置において、前
記支線電源バスが前記回路ブロックに要する電流容量に
比例した配線幅を有していることを特徴とする半導体装
置。internal gates arranged in rows and columns on a semiconductor substrate;
A circuit block provided by selectively connecting the internal gates, a main power supply bus for supplying power to the circuit block, and a branch power supply bus for connecting between the main power supply bus and the circuit block. 2. A semiconductor device according to claim 1, wherein the branch power supply bus has a wiring width proportional to a current capacity required for the circuit block.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33200689A JPH03191550A (en) | 1989-12-20 | 1989-12-20 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33200689A JPH03191550A (en) | 1989-12-20 | 1989-12-20 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03191550A true JPH03191550A (en) | 1991-08-21 |
Family
ID=18250086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP33200689A Pending JPH03191550A (en) | 1989-12-20 | 1989-12-20 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03191550A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006287198A (en) * | 2005-03-08 | 2006-10-19 | Sanyo Epson Imaging Devices Corp | Semiconductor circuit, circuit of driving electrooptical device, and electronic apparatus |
US7847759B2 (en) | 2005-03-08 | 2010-12-07 | Epson Imaging Devices Corporation | Semiconductor circuit, driving circuit of electro-optical device, and electronic apparatus |
-
1989
- 1989-12-20 JP JP33200689A patent/JPH03191550A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006287198A (en) * | 2005-03-08 | 2006-10-19 | Sanyo Epson Imaging Devices Corp | Semiconductor circuit, circuit of driving electrooptical device, and electronic apparatus |
US7847759B2 (en) | 2005-03-08 | 2010-12-07 | Epson Imaging Devices Corporation | Semiconductor circuit, driving circuit of electro-optical device, and electronic apparatus |
US8537152B2 (en) | 2005-03-08 | 2013-09-17 | Epson Imaging Devices Corporation | Semiconductor circuit, driving circuit of electro-optical device, and electronic apparatus |
US8552935B2 (en) | 2005-03-08 | 2013-10-08 | Epson Imaging Devices Corporation | Semiconductor circuit, driving circuit of electro-optical device, and electronic apparatus |
JP2013214071A (en) * | 2005-03-08 | 2013-10-17 | Epson Imaging Devices Corp | Electro-optical device and electronic apparatus |
US9262985B2 (en) | 2005-03-08 | 2016-02-16 | Epson Imaging Devices Corporation | Semiconductor circuit, driving circuit of electro-optical device, and electronic apparatus |
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