JPH03205872A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPH03205872A JPH03205872A JP2001829A JP182990A JPH03205872A JP H03205872 A JPH03205872 A JP H03205872A JP 2001829 A JP2001829 A JP 2001829A JP 182990 A JP182990 A JP 182990A JP H03205872 A JPH03205872 A JP H03205872A
- Authority
- JP
- Japan
- Prior art keywords
- ram
- macros
- semiconductor integrated
- integrated circuit
- gate array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000010586 diagram Methods 0.000 description 4
- 238000003491 array Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体集積回路に関し、特に論理回路用ゲート
アレイと複数のRAMマクロを有するRAM付ゲートア
レイ型半導体集積回路に関する.
〔従来の技術〕
従来のRAM付ゲートアレイ型半導体集積回路は、第3
図に示すように、個別品種設計において品種として必要
なビット数,ワード数を実現する為に、搭載された複数
のRAMマクロ301,302,303,304,30
5,306を任意に配線パターンにて切り換えている。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor integrated circuit, and more particularly to a gate array type semiconductor integrated circuit with a RAM having a gate array for a logic circuit and a plurality of RAM macros. [Prior art] A conventional gate array type semiconductor integrated circuit with RAM has a third
As shown in the figure, multiple RAM macros 301, 302, 303, 304, 30 are installed in order to realize the number of bits and words required for each product in individual product design.
5, 306 are arbitrarily switched by the wiring pattern.
この際、全く入出力信号を必要としないRAMマクロ3
07,308については、電力供給の為の配線パターン
は接続しいないことが一般的であった。At this time, RAM macro 3 that does not require any input/output signals
Regarding 07 and 308, the wiring pattern for power supply was generally not connected.
近年、コンピュータ等の情報処理装置の高性能化に伴な
い、システムサイクルタイムの短縮化が求められている
。この為、論理回路用ゲートアレイと、複数のRAMマ
クロが搭載されたいわゆるRAM付ゲートアレイ型の半
導体集積回路が、現在生流となっている.
RAMについては、個別品種ごとに、品種としてビット
数,ワード数,その他の機能構戒を任意に変えられるよ
うに、複数マクロを搭載しているのが一般的である。そ
の為に、単数マクロあるいは複数マクロを使ったRAM
ブロック(配線工程のパターンであって、ビット数,ワ
ード数等の機能構成を実現する為のもの〉を複数種類あ
らかじめ用意しておき、個別品種設計では、これらの中
ら選択し、配置していた.
このとき、入出力信号を必要としないRAMマクロにつ
いては電力供給ための配線パターンは接続していなかっ
たが、RAMブロックが大規模集積になってくるととも
に、次のような問題が出てくるようになった。In recent years, as information processing devices such as computers have become more sophisticated, there has been a demand for shorter system cycle times. For this reason, so-called RAM-equipped gate array type semiconductor integrated circuits, which are equipped with a gate array for logic circuits and a plurality of RAM macros, are now popular. Generally speaking, RAM is equipped with a plurality of macros so that the number of bits, number of words, and other functional configurations can be changed arbitrarily for each type of RAM. For that purpose, RAM using a single macro or multiple macros
Multiple types of blocks (patterns for the wiring process, used to realize functional configurations such as the number of bits and number of words) are prepared in advance, and in the design of individual products, one selects and places them from among these. At this time, wiring patterns for power supply were not connected to RAM macros that did not require input/output signals, but as RAM blocks became larger-scale integration, the following problems arose. It started coming.
(A)チップ内の温度分布が不均一になる。(A) Temperature distribution within the chip becomes non-uniform.
(B)使用マクロと未使用マクロとで電流経路が異なる
ことによる、電圧低下の不均一(C)上記理由による、
回路特性の不均一化。(B) Uneven voltage drop due to different current paths between used and unused macros (C) Due to the above reasons,
Non-uniformity of circuit characteristics.
本発明の半導体集積回路は、所望の品種を構成するビッ
ト数及びワード数を実現した際に、入出力信号の必要な
くなった未使用ブロックに、電力供給用の配線を接続し
たダミーRAMブロックを有して構戒される.
〔実施例〕
次に、本発明の実施例について図面を参照して説明する
。The semiconductor integrated circuit of the present invention has a dummy RAM block in which power supply wiring is connected to an unused block that no longer requires input/output signals when the number of bits and words constituting a desired product type is achieved. He is reprimanded for doing so. [Example] Next, an example of the present invention will be described with reference to the drawings.
第1図は本発明の第1の実施例を示すレイアウト図であ
る。FIG. 1 is a layout diagram showing a first embodiment of the present invention.
半導体チップの中央にゲートアレイ109を配し、周囲
に8ヶのRAMマクロを配するRAM付ゲートアレイで
ある,RAMマクロ101,102,103,104,
105,106は必要とするビット数,ワード数を実現
する為に用意されている。同時に1個のマクロで1個の
ブロック(機能実現の為の配線パターン〉を構戒したR
AMブロック111,112,113,114,115
,116を有する。RAMマクロ107,108は品種
の機能実現には不必要な未使用RAMマクロであり、そ
こには、電力供給の為の配線群を設けたダミーRAMブ
ロック117.118が設けられている.
第2図は本発明の第2実施例を示すレイアウト図である
。RAM macros 101, 102, 103, 104, which are gate arrays with RAM, have a gate array 109 in the center of a semiconductor chip and eight RAM macros around it.
105 and 106 are provided to realize the required number of bits and words. R with one block (wiring pattern for realizing function) using one macro at the same time
AM blocks 111, 112, 113, 114, 115
, 116. RAM macros 107 and 108 are unused RAM macros that are unnecessary for realizing the functions of the product, and dummy RAM blocks 117 and 118 are provided therein with wiring groups for power supply. FIG. 2 is a layout diagram showing a second embodiment of the present invention.
2個のRAMマクロを1個のブロックとした、ブロック
構戒をとるRAM付ゲートアレイである.RAMマクロ
201,202で1個のRAMブロック211を形成し
、未使用RAMマクロ203.204でダミーRAMブ
ロック212を形成する。This is a gate array with RAM that uses block configuration, with two RAM macros as one block. One RAM block 211 is formed by the RAM macros 201 and 202, and a dummy RAM block 212 is formed by the unused RAM macros 203 and 204.
以上説明したように本発明は、RAM付ゲートアレイ型
半導体集積回路の個別品種において、使用していなかっ
たRAMマクロにも、電力供給する為の配線を接続した
ダミーブロックを配置することにより、電力消費による
チップ内の温度分布を均一にし、電圧分布を一定にする
ことによって、チップ内素子の特性を均一にすることが
できるので、従来不良となっていたものも、本発明の採
用によって救済できる効果がある。又、多品種との特性
のばらつきを平均化することができるので、システムの
動作マージン確保の上で有益である。As explained above, the present invention provides power supply by arranging dummy blocks to which wiring for power supply is connected even to unused RAM macros in individual types of gate array type semiconductor integrated circuits with RAM. By making the temperature distribution within the chip uniform due to consumption and making the voltage distribution constant, the characteristics of the elements within the chip can be made uniform, so even things that were previously defective can be repaired by adopting the present invention. effective. Furthermore, it is possible to average out variations in characteristics among various products, which is useful in securing the operating margin of the system.
第1図及び第2図は本発明の第1及び第2の実施例を示
すレイアウト図、第3図は従来の半導体集積回路の一例
を示すレイアウト図である。
10,20.30・・・LSIチップ、101,102
,103,104,105,106,201,202,
203,204,301,302,303,304,3
05.306・・・RAMマクロ、107,108,2
03,204・・・未使用RAMマクロ、109,20
5,309・・・ゲートアレイ、111,112,11
3,114,115,116,211・・・RAMブロ
ック、212・・・ダミーRAMブロック、307.3
08・・・未使用RAMマクロ。1 and 2 are layout diagrams showing first and second embodiments of the present invention, and FIG. 3 is a layout diagram showing an example of a conventional semiconductor integrated circuit. 10,20.30...LSI chip, 101,102
,103,104,105,106,201,202,
203, 204, 301, 302, 303, 304, 3
05.306...RAM macro, 107,108,2
03,204...Unused RAM macro, 109,20
5,309...gate array, 111,112,11
3,114,115,116,211...RAM block, 212...Dummy RAM block, 307.3
08...Unused RAM macro.
Claims (1)
含み且つ前記RAMマクロの一部を未使用とする機能構
成を有するRAM付ゲートアレイ型半導体集積回路にお
いて、前記未使用RAMマクロに電力を供給する配線を
設けたダミーブロックを構成することを特徴とする半導
体集積回路。 2、RAMマクロの夫々が1個ずつのブロック又はダミ
ーブロックからなる請求項1記載の半導体集積回路。 3、ダミーブロックが2個のRAMマクロから構成され
る請求項1記載の半導体集積回路。[Scope of Claims] 1. In a gate array type semiconductor integrated circuit with a RAM having a functional configuration including a gate array for a logic circuit and a plurality of RAM macros and leaving a part of the RAM macros unused, A semiconductor integrated circuit comprising a dummy block provided with wiring for supplying power to a RAM macro. 2. The semiconductor integrated circuit according to claim 1, wherein each of the RAM macros comprises one block or a dummy block. 3. The semiconductor integrated circuit according to claim 1, wherein the dummy block is composed of two RAM macros.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001829A JPH03205872A (en) | 1990-01-08 | 1990-01-08 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001829A JPH03205872A (en) | 1990-01-08 | 1990-01-08 | Semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03205872A true JPH03205872A (en) | 1991-09-09 |
Family
ID=11512455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001829A Pending JPH03205872A (en) | 1990-01-08 | 1990-01-08 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03205872A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5898636A (en) * | 1993-06-21 | 1999-04-27 | Hitachi, Ltd. | Semiconductor integrated circuit device with interleaved memory and logic blocks |
US6629300B1 (en) | 1999-07-27 | 2003-09-30 | Nec Electronics Corporation | CAD system for an ASIC |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5940547A (en) * | 1982-08-30 | 1984-03-06 | Ricoh Co Ltd | Master slice integrated circuit |
JPS63293942A (en) * | 1987-05-27 | 1988-11-30 | Hitachi Ltd | Semiconductor integrated circuit device |
-
1990
- 1990-01-08 JP JP2001829A patent/JPH03205872A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5940547A (en) * | 1982-08-30 | 1984-03-06 | Ricoh Co Ltd | Master slice integrated circuit |
JPS63293942A (en) * | 1987-05-27 | 1988-11-30 | Hitachi Ltd | Semiconductor integrated circuit device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5898636A (en) * | 1993-06-21 | 1999-04-27 | Hitachi, Ltd. | Semiconductor integrated circuit device with interleaved memory and logic blocks |
US6034912A (en) * | 1993-06-21 | 2000-03-07 | Hitachi, Ltd. | Semiconductor integrated circuit device and method of manufacturing the same |
US6629300B1 (en) | 1999-07-27 | 2003-09-30 | Nec Electronics Corporation | CAD system for an ASIC |
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