JPH06232328A - Loc semiconductor device - Google Patents

Loc semiconductor device

Info

Publication number
JPH06232328A
JPH06232328A JP50A JP1556993A JPH06232328A JP H06232328 A JPH06232328 A JP H06232328A JP 50 A JP50 A JP 50A JP 1556993 A JP1556993 A JP 1556993A JP H06232328 A JPH06232328 A JP H06232328A
Authority
JP
Japan
Prior art keywords
power supply
signal
pads
lead wiring
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50A
Other languages
Japanese (ja)
Inventor
Toshiyuki Ogawa
俊行 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50A priority Critical patent/JPH06232328A/en
Publication of JPH06232328A publication Critical patent/JPH06232328A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/4826Connecting between the body and an opposite side of the item with respect to the body

Abstract

PURPOSE:To provide an LOC semiconductor device of a structure, wherein reduction in a source resistance and reduction in the input capacitance of a signal input in the interior of a semiconductor chip are made possible, by a method wherein wirings for power supply use and wirings for signal use in the interior of the semiconductor chip are made short. CONSTITUTION:Power pads 5a and 5b and signal pads 6 are arranged in the surface of a semiconductor chip 1 in a plurality of rows, a lead wiring frame 2 for first power supply use and a lead wiring frame 3 for second power supply use are arranged between the pads 5a, 5b and 6 installed in this plurality of rows and lead wiring frames 4 for signal use are respectively arranged on the respective outsides of the pads 5a, 5b and 6.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、半導体チップの表面
に、電源用リード配線フレーム、信号用リード配線フレ
ーム、電源用リード配線フレームを接続するための電源
パッドおよび信号用リード配線フレームを接続するため
の信号パッドをそれぞれ配置したLOC(リード オン
チップ)型半導体装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention connects a power supply lead wiring frame, a signal lead wiring frame, a power supply pad for connecting a power supply lead wiring frame and a signal lead wiring frame to the surface of a semiconductor chip. The present invention relates to a LOC (lead-on-chip) type semiconductor device in which signal pads are arranged respectively.

【0002】[0002]

【従来の技術】図2は従来のLOC型半導体装置の一例
を示し、図において、符号1は半導体チップ、2は第1
電源用リード配線フレーム、3は第2電源用リード配線
フレーム、4は信号用リード配線フレーム、5a,5b
は第1電源用リード配線用フレーム2、第2電源用リー
ド配線フレーム3をそれぞれ接続するための電源パッ
ド、そして、符号6は信号用リード配線フレーム4を接
続するための信号パッドである。
2. Description of the Related Art FIG. 2 shows an example of a conventional LOC type semiconductor device. In the figure, reference numeral 1 is a semiconductor chip and 2 is a first.
Power supply lead wiring frame, 3 is a second power supply lead wiring frame, 4 is a signal lead wiring frame, 5a, 5b
Is a power supply pad for connecting the first power supply lead wiring frame 2 and the second power supply lead wiring frame 3, respectively, and reference numeral 6 is a signal pad for connecting the signal lead wiring frame 4.

【0003】第1電源用リード配線フレーム2、第2電
源用リード配線フレーム3及び信号用リード配線フレー
ム4は、半導体チップ1の表面に配置され、また電源パ
ッド5a,5b及び信号パッド6は半導体チップ1のほ
ぼ中央部に一列に設置されている。そして、この電源パ
ット5aと5bに第1電源用リード配線フレーム2と第
2電源用リード配線フレーム3とがそれぞれ接続され、
また信号パッド6に信号用リード配線フレーム4が接続
されている。
The first power supply lead wiring frame 2, the second power supply lead wiring frame 3 and the signal lead wiring frame 4 are arranged on the surface of the semiconductor chip 1, and the power supply pads 5a and 5b and the signal pad 6 are semiconductors. The chips 1 are arranged in a line at approximately the center. Then, the first power supply lead wiring frame 2 and the second power supply lead wiring frame 3 are connected to the power supply pads 5a and 5b, respectively.
The signal lead wiring frame 4 is connected to the signal pad 6.

【0004】[0004]

【発明が解決しようとする課題】従来のLOC型半導体
装置は以上のように構成されているので、半導体チップ
の内部における電源パット5a,5bから半導体チップ
に組み込まれた回路素子(図省略)までの電源配線が長
くなり、このため電源抵抗が大きくなる等の課題があっ
た。
Since the conventional LOC type semiconductor device is configured as described above, from the power supply pads 5a and 5b inside the semiconductor chip to the circuit elements (not shown) incorporated in the semiconductor chip. However, there is a problem in that the power supply wiring becomes long, which increases the power supply resistance.

【0005】また、半導体チップ内部における信号パッ
ト6から回路素子までの信号配線も長くなり、このた
め、信号入力の入力容量が大きくなり、半導体装置が作
動しにくくなる等の課題があった。
Further, the signal wiring from the signal pad 6 to the circuit element inside the semiconductor chip is also lengthened, which increases the input capacitance of the signal input, making it difficult to operate the semiconductor device.

【0006】この発明は以上の課題を解決するためにな
されたもので、半導体チップの内部における電源抵抗の
低減及び信号入力の入力容量の低減を可能にしたLOC
型半導体装置を提供することを目的とする。
The present invention has been made to solve the above problems, and it is possible to reduce the power supply resistance inside the semiconductor chip and the input capacitance of the signal input.
An object of the present invention is to provide a semiconductor device.

【0007】[0007]

【課題を解決するための手段】この発明に係るLOC型
半導体装置は、半導体チップの表面に、電源用リード配
線フレーム及び信号用リード配線フレームをそれぞれ接
続するための電源パッドと信号パッドとを複数列に配置
し、この複数列に配置された電源パッド及び信号パッド
の間に前記電源用リード配線フレームを設置し、かつ前
記電源パッド及び信号パッドの外側に前記信号用リード
配線フレームを配置したものである。
In a LOC type semiconductor device according to the present invention, a plurality of power supply pads and signal pads for respectively connecting a power supply lead wiring frame and a signal lead wiring frame are provided on the surface of a semiconductor chip. The power supply lead wiring frame is arranged between the power supply pads and the signal pads arranged in a plurality of rows, and the signal lead wiring frame is arranged outside the power supply pads and the signal pads. Is.

【0008】[0008]

【作用】この発明に係るLOC型半導体装置において
は、電源パッド及び信号パッドが半導体チップの表面に
複数列に設置され、この複数列に設置された電源パッド
及び信号パッドの間に電源用リード配線フレームが設置
されていることにより、半導体チップ内部における電源
パッドから半導体チップの中に組み込まれた回路素子ま
での電源用配線が短くなり、これにより半導体チップ内
部の電源抵抗の低減が図れる。また、半導体チップの内
部における信号用配線も短くなり、これにより信号入力
の入力容量の低減が図れる。
In the LOC type semiconductor device according to the present invention, the power supply pads and the signal pads are arranged in a plurality of rows on the surface of the semiconductor chip, and the power supply lead wiring is provided between the power supply pads and the signal pads arranged in the plurality of rows. The installation of the frame shortens the power supply wiring from the power supply pad inside the semiconductor chip to the circuit element incorporated in the semiconductor chip, thereby reducing the power supply resistance inside the semiconductor chip. Further, the signal wiring inside the semiconductor chip is also shortened, so that the input capacitance of the signal input can be reduced.

【0009】[0009]

【実施例】図1はこの発明に係るLOC型半導体装置の
一実施例を示し、図において、符号1は半導体チップ、
2は第1電源用リード配線フレーム、3は第2電源用リ
ード配線フレーム、4は信号用リード配線フレーム、5
aと5bは第1電源用リード配線用フレーム2と第2電
源用リード配線フレーム3をそれぞれ接続するための電
源パッド、そして符号6は信号用リード配線フレーム4
を接続するための信号パッドである。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows an embodiment of the LOC semiconductor device according to the present invention.
Reference numeral 2 is a first power supply lead wiring frame, 3 is a second power supply lead wiring frame, 4 is a signal lead wiring frame, 5
a and 5b are power supply pads for connecting the first power supply lead wiring frame 2 and the second power supply lead wiring frame 3, respectively, and reference numeral 6 is a signal lead wiring frame 4
Is a signal pad for connecting to.

【0010】電源パッド5a,5b及び信号パッド6
は、半導体チップ1の表面に2列に配置されている。ま
た、第1電源用リード配線フレーム2及び第2電源用リ
ード配線フレーム3は、2列に設けられた電源パッド5
a,5b及び信号パッド6の間に、これらの電源パッド
5a,5b及び信号パッド6に沿って設置され、かつ、
任意の部分で電源パット5a及び5bとワイヤー7によ
って電気的に接続されている。
Power supply pads 5a, 5b and signal pad 6
Are arranged in two rows on the surface of the semiconductor chip 1. The first power supply lead wiring frame 2 and the second power supply lead wiring frame 3 are provided with power supply pads 5 arranged in two rows.
a, 5b and the signal pad 6 are installed along the power supply pads 5a, 5b and the signal pad 6, and
The power pads 5a and 5b are electrically connected by wires 7 at arbitrary portions.

【0011】また、信号用リード配線フレーム4は、2
列に設けられた電極パッド5a,5b及び信号パッド6
の外側に配置され、それぞれ信号パット6とワイヤー8
によって接続されている。
Further, the signal lead wiring frame 4 has two
Electrode pads 5a, 5b and signal pads 6 provided in the row
Placed on the outside of the signal pad 6 and wire 8 respectively
Connected by.

【0012】上記のLOC型半導体装置においては、電
源パッド5a、5b及び信号パッド6が半導体チップ1
の表面に2列に設置され、この列の間に電源用リード配
線フレーム2,3が配置されているので、半導体チップ
1内部における電源パッド5a、5bから半導体チップ
1内部に組み込まれた回路素子までの電源配線を短くす
ることができる。
In the LOC type semiconductor device described above, the power supply pads 5a and 5b and the signal pad 6 are the semiconductor chip 1.
Since the power supply lead wiring frames 2 and 3 are arranged in two rows on the surface of the semiconductor chip, the circuit elements incorporated in the semiconductor chip 1 from the power supply pads 5a and 5b in the semiconductor chip 1 are arranged. The power wiring up to can be shortened.

【0013】また、電源パッド5a,5bと電源用リー
ド配線フレーム2,3とを電源用リード配線フレーム
2,3の任意の部分でワイヤー7を介して接続すること
ができる。
Further, the power supply pads 5a and 5b and the power supply lead wiring frames 2 and 3 can be connected to each other through a wire 7 at any portion of the power supply lead wiring frames 2 and 3.

【0014】さらに、半導体チップ1内部における信号
パッド6から回路素子までの信号用配線も短くすること
ができる。
Further, the signal wiring from the signal pad 6 to the circuit element inside the semiconductor chip 1 can be shortened.

【0015】なお、上記実施例では電源パッド5a,5
bおよび信号パッド6により形成された列は2列であっ
たが、3列以上であってもよいのは勿論である。
In the above embodiment, the power supply pads 5a, 5a
The number of columns formed by b and the signal pads 6 is two, but it is needless to say that the number of columns may be three or more.

【0016】[0016]

【発明の効果】以上説明したように、この発明に係るL
OC型半導体装置によれば、電源パッド及び信号パッド
が半導体チップの表面に複数列に配置され、この複数列
に配置された電源パッド及び信号パッドの間に電源用リ
ード配線フレームが設置されているので、半導体チップ
内部における電源パッドから半導体チップ内部に組み込
まれた回路素子までの電源配線を短くすることができ、
これにより半導体チップ内部の電源抵抗の低減が可能と
なる効果がある。また、電源パッドと電源用リード配線
フレームとを電源用リード配線フレームの任意の部分で
接続することができる効果がある。さらに、半導体チッ
プ内部における信号パッドから回路素子までの信号用配
線も短くすることができ、これにより信号入力の入力容
量を低減することができ、半導体装置の作動の低下を防
止することができる効果がある。
As described above, the L according to the present invention is
According to the OC type semiconductor device, the power supply pads and the signal pads are arranged in a plurality of rows on the surface of the semiconductor chip, and the power supply lead wiring frame is installed between the power supply pads and the signal pads arranged in the plurality of rows. Therefore, the power supply wiring from the power supply pad in the semiconductor chip to the circuit element incorporated in the semiconductor chip can be shortened,
This has an effect that the power supply resistance inside the semiconductor chip can be reduced. In addition, there is an effect that the power supply pad and the power supply lead wiring frame can be connected at any portion of the power supply lead wiring frame. Further, it is possible to shorten the signal wiring from the signal pad to the circuit element inside the semiconductor chip, which can reduce the input capacitance of the signal input and prevent the operation of the semiconductor device from being lowered. There is.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明に係るLOC型半導体装置の一実施例
の平面図である。
FIG. 1 is a plan view of an embodiment of an LOC semiconductor device according to the present invention.

【図2】従来のLOC型半導体装置の一例を示す平面図
である。
FIG. 2 is a plan view showing an example of a conventional LOC semiconductor device.

【符号の説明】[Explanation of symbols]

1 半導体チップ 2 第1電源用リード配線フレーム 3 第2電源用リード配線フレーム 4 信号用リード配線フレーム 5a 電源パッド 5b 電源パッド 6 信号パッド 1 semiconductor chip 2 first power supply lead wiring frame 3 second power supply lead wiring frame 4 signal lead wiring frame 5a power supply pad 5b power supply pad 6 signal pad

【手続補正書】[Procedure amendment]

【提出日】平成5年10月13日[Submission date] October 13, 1993

【手続補正1】[Procedure Amendment 1]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】請求項1[Name of item to be corrected] Claim 1

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【手続補正2】[Procedure Amendment 2]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0004[Correction target item name] 0004

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0004】[0004]

【発明が解決しようとする課題】従来のLOC型半導体
装置は以上のように構成されているので、半導体チップ
の内部における電源パット5a,5bから半導体チップ
に組み込まれた回路素子(図省略)までの電源配線が
半導体内の配線材料で施され、このため電源抵抗が大き
くなる等の課題があった。
Since the conventional LOC type semiconductor device is configured as described above, the power supply pads 5a and 5b inside the semiconductor chip can be removed from the semiconductor chip.
Power wiring to the integrated circuit elements (FIG omitted) within the
Since the wiring material is used in the semiconductor, there is a problem that the power supply resistance increases.

【手続補正3】[Procedure 3]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0005[Name of item to be corrected] 0005

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0005】また、半導体チップ内部における信号パッ
ト6に接続される信号用リードフレーム4も長くなり、
このため、信号入力の入力容量が大きくなり、半導体装
置が作動しにくくなる等の課題があった。
Further, the signal lead frame 4 connected to the signal pad 6 inside the semiconductor chip also becomes longer,
Therefore, there is a problem that the input capacitance of the signal input becomes large and the semiconductor device becomes difficult to operate.

【手続補正4】[Procedure amendment 4]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0006[Correction target item name] 0006

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0006】この発明は以上の課題を解決するためにな
されたもので、半導体チップの電源抵抗の低減及び信号
入力の入力容量の低減を可能にしたLOC型半導体装置
を提供することを目的とする。
[0006] and aims this invention to provide an above problems has been made to solve the, LOC type semiconductor device that enables a reduction in the input capacitance of the reduction and the signal input of the power resistance of the semiconductor chip To do.

【手続補正5】[Procedure Amendment 5]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0007[Correction target item name] 0007

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0007】[0007]

【課題を解決するための手段】この発明に係るLOC型
半導体装置は、半導体チップの表面に、電源用リード配
線フレーム及び信号用リード配線フレームをそれぞれ接
続するための電源パッドと信号パッドとを複数列に配置
し、この複数列に配置された電源パッド及び信号パッド
の間に前記電源用リード配線フレームを設置し、これを
用いて前記複数列に配置された電源パッドに接続し、
つ前記電源パッド及び信号パッドの外側に前記信号用リ
ード配線フレームを配置したものである。
In a LOC type semiconductor device according to the present invention, a plurality of power supply pads and signal pads for respectively connecting a power supply lead wiring frame and a signal lead wiring frame are provided on the surface of a semiconductor chip. place the column, placing the power lead wire frame between the power pads and signal pads arranged in the plurality of rows, this
It is used to connect to the power supply pads arranged in the plurality of columns, and the signal lead wiring frame is arranged outside the power supply pads and the signal pads.

【手続補正6】[Procedure correction 6]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0008[Correction target item name] 0008

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0008】[0008]

【作用】この発明に係るLOC型半導体装置において
は、電源パッド及び信号パッドが半導体チップに複数列
に設置され、この複数列に設置された電源パッド及び信
号パッドの間に電源用リード配線フレームが設置されて
いることにより、半導体チップ内部における電源パッド
から半導体チップの中に組み込まれた回路素子までの電
源用配線が短くなり、これにより半導体チップ内部の電
源抵抗の低減が図れる。また、半導体チップのパッドか
ら外部への信号用配線フレームも短くなり、これにより
信号入力の入力容量の低減が図れる。
[Action] In LOC type semiconductor device according to the present invention, power pads and signal pads are disposed in a plurality of rows in a semiconductor chip, power lead wire frame between the power pads and signal pads installed in the plurality of rows By installing the power supply wiring, the power supply wiring from the power supply pad inside the semiconductor chip to the circuit element incorporated in the semiconductor chip is shortened, whereby the power supply resistance inside the semiconductor chip can be reduced. Also, the pad of the semiconductor chip
Also, the signal wiring frame to the outside is shortened, whereby the input capacitance of the signal input can be reduced.

【手続補正7】[Procedure Amendment 7]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0014[Correction target item name] 0014

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0014】さらに、半導体チップ1信号パッド6か
外部への信号用配線フレームも短くすることができ
る。
Further, the signal wiring frame from the signal pad 6 of the semiconductor chip 1 to the outside can be shortened.

【手続補正8】[Procedure Amendment 8]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0016[Correction target item name] 0016

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0016】[0016]

【発明の効果】以上説明したように、この発明に係るL
OC型半導体装置によれば、電源パッド及び信号パッド
が半導体チップの表面に複数列に配置され、この複数列
に配置された電源パッド及び信号パッドの間に電源用リ
ード配線フレームが設置されているので、半導体チップ
内部における電源パッドから半導体チップ内部に組み込
まれた回路素子までの電源配線を短くすることができ、
これにより半導体チップ内部の電源抵抗の低減が可能と
なる効果がある。また、電源パッドと電源用リード配線
フレームとを電源用リード配線フレームの任意の部分で
接続することができる効果がある。さらに、半導体チッ
信号パッドから外部への信号用配線も短くすること
ができ、これにより信号入力の入力容量を低減すること
ができ、半導体装置の作動の低下を防止することができ
る効果がある。
As described above, the L according to the present invention is
According to the OC type semiconductor device, the power supply pads and the signal pads are arranged in a plurality of rows on the surface of the semiconductor chip, and the power supply lead wiring frame is installed between the power supply pads and the signal pads arranged in the plurality of rows. Therefore, the power supply wiring from the power supply pad in the semiconductor chip to the circuit element incorporated in the semiconductor chip can be shortened,
This has an effect that the power supply resistance inside the semiconductor chip can be reduced. In addition, there is an effect that the power supply pad and the power supply lead wiring frame can be connected at any portion of the power supply lead wiring frame. Further, it is possible to shorten the signal wiring from the signal pad of the semiconductor chip to the outside , thereby reducing the input capacitance of the signal input and preventing the deterioration of the operation of the semiconductor device. .

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 半導体チップの表面に、電源用リード配
線フレーム、信号用リード配線フレーム、電源用リード
配線フレームを接続するための電源パッドおよび信号用
リード配線フレームを接続するための信号パッドをそれ
ぞれ配置したLOC型半導体装置において、前記電源パ
ッド、前記信号パッドを複数列に配置するとともに、こ
の複数列に配置された電源パッド、信号パッドの間に前
記電源用リード配線フレームを配置し、また前記電源パ
ッド、前記信号パッドの外側に前記信号用リード配線フ
レームを配置したことを特徴とするLOC型半導体装
置。
1. A power supply lead wiring frame, a signal lead wiring frame, a power supply pad for connecting the power supply lead wiring frame, and a signal pad for connecting the signal lead wiring frame to the surface of the semiconductor chip, respectively. In the arranged LOC semiconductor device, the power supply pads and the signal pads are arranged in a plurality of columns, and the power supply lead wiring frame is arranged between the power supply pads and the signal pads arranged in the plurality of columns, and A LOC type semiconductor device, wherein the signal lead wiring frame is arranged outside a power supply pad and the signal pad.
JP50A 1993-02-02 1993-02-02 Loc semiconductor device Pending JPH06232328A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50A JPH06232328A (en) 1993-02-02 1993-02-02 Loc semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50A JPH06232328A (en) 1993-02-02 1993-02-02 Loc semiconductor device

Publications (1)

Publication Number Publication Date
JPH06232328A true JPH06232328A (en) 1994-08-19

Family

ID=11892377

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50A Pending JPH06232328A (en) 1993-02-02 1993-02-02 Loc semiconductor device

Country Status (1)

Country Link
JP (1) JPH06232328A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0926734A2 (en) * 1997-12-22 1999-06-30 Texas Instruments Incorporated Method and apparatus for delivering electrical power to a semiconducteur die
US6016003A (en) * 1996-10-29 2000-01-18 Nec Corporation Chip-lead interconnection structure in a semiconductor device
KR100401536B1 (en) * 1997-12-31 2004-01-24 주식회사 하이닉스반도체 Method for altering center pad type semiconductor chip to peripheral pad type semiconductor chip
CN103928431A (en) * 2012-10-31 2014-07-16 矽力杰半导体技术(杭州)有限公司 Inversion packaging device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6016003A (en) * 1996-10-29 2000-01-18 Nec Corporation Chip-lead interconnection structure in a semiconductor device
EP0926734A2 (en) * 1997-12-22 1999-06-30 Texas Instruments Incorporated Method and apparatus for delivering electrical power to a semiconducteur die
EP0926734A3 (en) * 1997-12-22 2002-04-03 Texas Instruments Incorporated Method and apparatus for delivering electrical power to a semiconducteur die
KR100401536B1 (en) * 1997-12-31 2004-01-24 주식회사 하이닉스반도체 Method for altering center pad type semiconductor chip to peripheral pad type semiconductor chip
CN103928431A (en) * 2012-10-31 2014-07-16 矽力杰半导体技术(杭州)有限公司 Inversion packaging device

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