JPH03187983A - Method for cementing silicon nitride-based sintered compact to aluminum - Google Patents
Method for cementing silicon nitride-based sintered compact to aluminumInfo
- Publication number
- JPH03187983A JPH03187983A JP32517289A JP32517289A JPH03187983A JP H03187983 A JPH03187983 A JP H03187983A JP 32517289 A JP32517289 A JP 32517289A JP 32517289 A JP32517289 A JP 32517289A JP H03187983 A JPH03187983 A JP H03187983A
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- aluminum
- sintered body
- nitride sintered
- active metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 62
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 62
- 229910052782 aluminium Inorganic materials 0.000 title claims description 50
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims description 50
- 238000000034 method Methods 0.000 title claims description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 238000004381 surface treatment Methods 0.000 claims abstract description 18
- 238000005219 brazing Methods 0.000 claims abstract description 10
- 238000005304 joining Methods 0.000 claims description 23
- 229910000679 solder Inorganic materials 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 229910052726 zirconium Inorganic materials 0.000 abstract description 3
- 239000000919 ceramic Substances 0.000 description 9
- 229910052575 non-oxide ceramic Inorganic materials 0.000 description 6
- 239000011225 non-oxide ceramic Substances 0.000 description 6
- 239000002335 surface treatment layer Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 150000004678 hydrides Chemical class 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 229910017309 Mo—Mn Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229910000976 Electrical steel Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910009871 Ti5Si3 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum alloy) Chemical compound 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Abstract
Description
（Ｍ業主の利用分野〕
この発明は、セラミックスと金属との接合方法に係わり
、とくにセラミックスの中でも強度および靭性にすぐれ
た窒化珪素質焼結体と金属の中でも耐食性にすぐれると
共に軽量であるアルミニウムとを接合するのに利用され
る窒化珪素質焼結体とアルミニウムとの接合方法に関す
るものである。
（従来の技術）
従来、窒化珪素質焼結体とアルミニウムとを接合する公
知例は全くなく、窒化珪素質焼結体以外のアルミナセラ
ミックス等の酸化物系のセラミックスを対象としたもの
では、Ｍ ｏ 、 Ｍ ｏ −Ｍ ｎ 。
Ｗなどの微粉末を有機バインターおよび溶剤等と共に混
練してペースト状にし、これを酸化物系のセラミックス
表面に塗布した後、加湿水素中で１３００−１７００℃
で焼成することによって、前記Ｍｏ 、Ｍｏ−Ｍｎ 、
Ｗ等の高融点金属の一部が酸化物を形成するようにし、
これによってセラミックス中のガラス相に溶は込ませる
ことによりメタライズを行い、このメタライズ面は酸化
防止のためにＮｉメツキ処理を施し、次いでろう材を用
いて他の金属と接合するようにした方法があった。
また、窒化珪素等の非酸化物系のセラミックスととくに
鋼との接合方法としてはＴｉ、Ｚｒあるいはその水素化
物をＡｇろうやＣｕろうに添加してろう付は接合するい
わゆる活性金属法が知られている。
（発明が解決しようとする課題）
しかしながら、このような従来の窒化珪素等の非酸化物
系のセラミックスと鋼との接合方法にあっては、Ｔｉ、
Ｚｒあるいはその水素化物をＡｇろう、Ｃｕろう等に添
加し、８００〜１０００℃の温度で加熱してろう付は接
合するようにしていたため、アルミニウムのような低融
点金属との接合は不可能であるという課題があった。
また、メタライズを行ったのちＮｉメツキ処理を施して
ろう付は接合する方法では、窒化珪素等の非酸化物系の
セラミックスと金属との接合は不可能であり、工程にお
いても加湿水素中でメタライズ処理を行った後にＮｉメ
ツキ処理を施してろう付は接合するという複雑なもの〒
あるという課題があった。
（発明の目的）
この発明は、このような従来の課題にかんがみてなされ
たもので、簡単な工程により窒化珪素質焼結体とアルミ
ニウムとの接合を強固に行うことが可能である窒化珪素
質焼結体とアルミニウムとの接合方法を提供することを
目的としている。(Field of application for business owner M) This invention relates to a method of joining ceramics and metals, and particularly relates to a silicon nitride sintered body, which has excellent strength and toughness among ceramics, and aluminum, which has excellent corrosion resistance and light weight among metals. The present invention relates to a method of joining a silicon nitride sintered body and aluminum, which is used for joining them together. (Prior art) Until now, there has been no known example of joining a silicon nitride sintered body and aluminum. , For oxide ceramics such as alumina ceramics other than silicon nitride sintered bodies, fine powders such as Mo, Mo-Mn.W are kneaded with organic binder and solvent to form a paste. After applying this to the surface of oxide-based ceramics, it was heated at 1300-1700℃ in humidified hydrogen.
By firing with
A part of the high melting point metal such as W forms an oxide,
As a result, metallization is performed by melting into the glass phase of ceramics, the metallized surface is plated with Ni to prevent oxidation, and then it is bonded to other metals using a brazing filler metal. there were. In addition, as a method for joining non-oxide ceramics such as silicon nitride, especially to steel, the so-called active metal method is known, in which Ti, Zr, or their hydrides are added to Ag or Cu solder for joining. ing. (Problems to be Solved by the Invention) However, in the conventional method of joining non-oxide ceramics such as silicon nitride and steel, Ti,
Since Zr or its hydride was added to Ag solder, Cu solder, etc., and the solder was heated at a temperature of 800 to 1000°C, it was impossible to join with low melting point metals such as aluminum. There was an issue. In addition, with the method of metallizing and then Ni plating and brazing, it is impossible to join non-oxide ceramics such as silicon nitride with metal, and metallization is performed in humidified hydrogen during the process. It is a complex item that requires Ni plating after treatment and brazing to join.
There was an issue. (Purpose of the Invention) This invention was made in view of such conventional problems, and is a silicon nitride sintered body that can firmly bond a silicon nitride sintered body and aluminum through a simple process. The purpose of this invention is to provide a method for joining a sintered body and aluminum.
（課題を解決するための手段）
この発明に係わる窒化珪素質焼結体とアルミニウムとの
接合方法は、前記窒化珪素質焼結体と前記アルミニウム
（アルミニウム合金を含む。）とを接合するに際し、前
記窒化珪素質焼結体の接合面に活性金属を接触させた状
態にして１０−４Ｔｏｒｒ以下の真空中において温度８
００〜１１００℃で熱処理を行うことにより前記窒化珪
素質焼結体に表面処理を行う第１工程を経たのち、前記
表面処理を行った窒化珪素質焼結体の接合面にアルミニ
ウムろうを用いて前記アルミニウムの接合面をろう付は
接合する第２工程を経る構成としたことを特徴としてお
り、このような窒化珪素質焼結体とアルミニウムとの接
合方法、の構成を前述した従来の課題を解決するための
手段としている。
この発明に係わる窒化珪素質焼結体とアルミニウムとの
接合方法において、前記窒化珪素質焼結体としては、珪
素を出発原料とするものや窒化珪素を出発原料とするも
のなどがあり、さらには焼結助剤や焼結条件を適宜特定
したものなどがあるが、とくに限定はされない。
また、アルミニウムとしては、純アルミニウムのほか、
アルミニウム合金に適用することも可能であるが、これ
もまた特に限定はされない。
そして、前記窒化珪素質焼結体の接合面に活性金属を用
いた表面処理を行うに際しては、前記活性金属としてＴ
ｉ、Ｚｒなどが用いられるが、これもまた特に限定はさ
れない。
そして、この表面処理にあたっては、窒化珪素質焼結体
の接合面に活性金属を接触させた状態にして、１ｏ−３
Ｔｏｒｒ以下の真空中において温度８００〜１１００℃
で熱処理を行うことにより。
前記窒化珪素質焼結体の接合表面に活性金属表面処理層
を形成させる第１工程を経る。
この場合１表面処理温度が８００℃よりも低いときおよ
び表面処理温度が１１００℃よりも高いときには、いず
れも接合体の引張強度が低くなるので好ましくない。
次いで、前記活性金属表面層を形成させた窒化珪素質焼
結体の接合面にアルミニウムろうを用いて前記アルミニ
ウムの接合面をろう付は接合する第２工程を経ることに
より、前記・窒化珪素質焼結体と前記アルミニウムとを
接合する。
（発明の作用）
この発明に係わる窒化珪素質焼結体とアルミニウムとの
接合方法では、前記窒化珪素質焼結体の接合面に活性金
属を接触させた状態にして１０−３Ｔｏｒｒ以下の真空
中において温度８００〜１１００℃で熱処理を行うこと
により前記窒化珪素質焼結体に表面処理を行う第１工程
を経たのち、前記表面処理を行った窒化珪素質焼結体の
接合面にアルミニウムろうを用いて前記アルミニウムの
接合面をろう付けする第２工程を経るようにしたから、
従来接合が困難であった窒化珪素質焼結体とアルミニウ
ムとの接合が強固になされるようになるという作用がも
たらされる。
（実施例）
第１図はこの発明の一実施例を示す図であり、直径１０
ｍｍの窒化珪素質焼結体１の接合面１ａに、活性金属で
あるＴｉにより表面処理された活性金属表面処理層３が
形成されており、この活性金属表面処理層３はアルミニ
ウムろう４を用いることにより、同じく直径１０ｍｍの
アルミニウム２の接合面２ａと接合されている。
次に、このような構造を有する接合体の製造工程を第２
図（ａ）〜（ｄ、）に基づいて説明する。
まず、第２図（ａ）に示すように、窒化珪素質焼結体１
の接合面１ａにＴｉ箔３ａを配置し、２Ｘ１０＝Ｔｏｒ
ｒの真空度で約８００℃、約９００℃、約１０００℃、
約１１００℃、約１２００℃の５種類の表面処理温度で
それぞれ６０ｍ１ｎの熱処理を施した。
次いで、第２図（ｂ）に示すように、熱処理後に余剰の
Ｔｉ３ｂを取り除くと、窒化珪素質焼結体１の接合面１
ａに、金属光沢を示す活性金属表面処理層３が形成され
る。
続いて、第２図（Ｃ）に示すように、活性金属表面処理
層３の上面にアルミニウムろう（箔；ＪＩＳ ＢＡ４
００４）４を介してアルミニウム（ＪＩＳ Ａ６０６
１およびＪＩＳ Ａ１０５０の２種類）２をそれぞれ
配置し、２Ｘ１０−’ＴＯｒｒの真空度で６００℃、６
０ｍ１ｎのろう付は処理を行うと、第２図（ｄ）に示す
ように、窒化珪素質焼結体１とアルミニウム２との接合
体が得られる。
第３図は前記表面処理温度による引張強度の依存性を調
べた結果を示すものである。
この第３図は、前述したように、約８００℃、約９００
℃、約１ｏｏｏ℃、約１１００°Ｃ１約工２００°Ｃの
各温度で表面処理を行い、その後６００℃で純アルミニ
ウム（ＪＩＳＡ１０５０）またはアルミニウム合金（Ｊ
ＩＳＡ６０８１）からなるアルミニウム２をアルミニウ
ムろう（箔、ＪＩＳ ＢＡ４００４）４を用いて接合
した接合体の試験温度２７℃における引張強度を示した
ものである。
この第３図に示すように、接合体の引張強度は表面処理
温度９００℃で最大値を示した。そこで、表面処理温度
は、使用される接合部材の要求強度にもよるが、８００
〜１１００℃が適切と考えられる。
また、この表面処理を行った窒化珪素質焼結体１の接合
面１ａをＸＰＳ（Ｘ線光電子分光分析）により解析した
結果を第４図（ａ）〜（Ｃ）に示す、この第４図は、約
９００℃で表面処理した窒化珪素質焼結体１をＡｒスパ
ッタリングにより活性金属表面処理層３を深さ方向に各
深さでスパッタさせた時の各元素または化合物のプロフ
ィールの変化を示したものであるが、活性金属表面処理
層３は、約３０００λでこの層にはＴｉ。
Ｔ ｉ Ｎ 、 Ｔ ｉ ５ Ｓ ｉ ３ 、 Ｓ
ｉが含まれていることがわかる。したがって、これらの
元素または化合物がアルミニウムろう４と反応して接合
するものと考えられた。
本発明は、セラミックスの中でも構造用部材に適用され
つつある非酸化物系セラミックスである窒化珪素質焼結
体と、軽量で軟質であるアルミニウムとの接合方法であ
る。
従来技術としては、前述したように、アルミナ等の酸化
物系セラミックスに対してＭ ｏ −Ｍ ｎ等の微粉末
を有機バインダーと混合してセラミックスの接合面に塗
布した後、加湿水素中で１３００〜１７００℃で焼成す
るとセラミックスの接合面にメタライズ層が形成され、
このメタライズ面にＮｉメフキ処理を施してろう付けす
ることにより金属と接合する方法がある。
しかし、この方法を窒化珪素質焼結体の接合に適用して
も、第１表の比較例１の欄に示すようにメタライズ層を
形成することができなかった。こ０
れはＭｏ 、Ｗの酸化物を形成しても非酸化物系セラミ
ックスである窒化珪素質焼結体には溶けこまないためと
思われる。
また、非酸化物系セラミックスでは、Ｔｉ。
Ｚｒおよびその水素化物を使用してろう付けするいわゆ
る活性金属法がある。
しかし、この方法をアルミニウムとの接合に適用しても
、第１表の比較例２の欄に示すように全く接合しなかっ
た。これは６００℃程度の低温では窒化珪素質焼結体と
活性金属とが反応しないためと考えられる。
さらに、窒化珪素質焼結体の接合面にあらかじめ蒸着に
よりＴｉをコーティングしておき、この面にアルミニウ
ムろうによりアルミニウムをろう付けしても、第１表の
比較例３の欄に示すように接合は全く生じなかった。こ
れは窒化珪素質焼結体の表面に物理的に活性金属を配置
しただけでは接合力が得られず、第１表の実施例の欄に
示すようにこれを熱処理することにより前述したような
Ｔｉ 、ＴｉＮ、Ｔｉ５Ｓｉ３ 、Ｓｉ等の化合物が生
成するようにしないとアルミニウムろうと接合しないも
のと考えられる。
さらにまた、窒化珪素質焼結体の接合面にＴｉ箔を配置
しただけでアルミニウムとの接合を試みた第１表の比較
例４に示す接合方法では、これも全く接合は生じなかっ
た。そして、これもまた６００℃程度の低温では窒化珪
素質焼結体と活性金属が反応しないためと考えられる。
１
２(Means for Solving the Problems) A method for joining a silicon nitride sintered body and aluminum according to the present invention includes, when joining the silicon nitride sintered body and the aluminum (including aluminum alloy), The silicon nitride sintered body was heated to a temperature of 8 in a vacuum of 10-4 Torr or less with an active metal in contact with the joint surface.
After the first step of surface-treating the silicon nitride sintered body by heat treatment at 00 to 1100°C, aluminum solder is used on the joint surface of the silicon nitride sintered body that has undergone the surface treatment. The invention is characterized in that the joining surface of the aluminum is brazed through a second step of joining, and the structure of the method of joining such a silicon nitride sintered body and aluminum overcomes the above-mentioned conventional problem. It is used as a means to solve the problem. In the method for joining a silicon nitride sintered body and aluminum according to the present invention, the silicon nitride sintered body includes those using silicon as a starting material and those using silicon nitride as a starting material; There are some examples in which sintering aids and sintering conditions are appropriately specified, but there are no particular limitations. In addition to pure aluminum, aluminum also includes
It is also possible to apply to aluminum alloys, but this is also not particularly limited. When performing surface treatment using an active metal on the bonding surface of the silicon nitride sintered body, the active metal is T.
i, Zr, etc. are used, but these are also not particularly limited. In this surface treatment, the bonding surface of the silicon nitride sintered body is brought into contact with the active metal, and 1o-3
Temperature 800-1100℃ in vacuum below Torr
By performing heat treatment on. A first step is performed in which an active metal surface treatment layer is formed on the bonding surface of the silicon nitride sintered body. In this case, it is undesirable if the surface treatment temperature is lower than 800° C. or higher than 1100° C., since the tensile strength of the bonded body decreases in both cases. Next, the silicon nitride sintered body on which the active metal surface layer has been formed undergoes a second step of brazing or bonding the aluminum joint surface using an aluminum solder. The sintered body and the aluminum are joined. (Function of the Invention) In the method of joining a silicon nitride sintered body and aluminum according to the present invention, an active metal is brought into contact with the joining surface of the silicon nitride sintered body in a vacuum of 10-3 Torr or less. After the first step of surface-treating the silicon nitride sintered body by heat treatment at a temperature of 800 to 1100°C, an aluminum solder is applied to the joint surface of the silicon nitride sintered body that has undergone the surface treatment. Since the second step is to braze the joint surface of the aluminum using
This brings about the effect that the silicon nitride sintered body and aluminum, which have been difficult to bond in the past, can be firmly bonded. (Embodiment) FIG. 1 is a diagram showing an embodiment of the present invention, with a diameter of 10 mm.
An active metal surface treatment layer 3 surface-treated with Ti, which is an active metal, is formed on the joint surface 1a of the silicon nitride sintered body 1 with a diameter of As a result, it is joined to the joint surface 2a of the aluminum 2, which also has a diameter of 10 mm. Next, the manufacturing process of the joined body having such a structure is carried out in the second stage.
This will be explained based on FIGS. (a) to (d). First, as shown in FIG. 2(a), a silicon nitride sintered body 1
Ti foil 3a is placed on the joint surface 1a of 2X10=Tor
About 800℃, about 900℃, about 1000℃ at r vacuum degree,
Heat treatment was performed for 60 m1n at five types of surface treatment temperatures of about 1100°C and about 1200°C. Next, as shown in FIG. 2(b), when the excess Ti3b is removed after the heat treatment, the bonding surface 1 of the silicon nitride sintered body 1 is removed.
An active metal surface treatment layer 3 exhibiting metallic luster is formed on a. Subsequently, as shown in FIG. 2(C), aluminum solder (foil; JIS BA4
004) Aluminum (JIS A606
1 and JIS A1050) 2 were placed respectively, and heated at 600°C with a vacuum degree of 2 x 10-' TOrr.
When 0 m1n of brazing is performed, a joined body of silicon nitride sintered body 1 and aluminum 2 is obtained as shown in FIG. 2(d). FIG. 3 shows the results of investigating the dependence of tensile strength on the surface treatment temperature. As mentioned above, this figure 3 shows temperatures of about 800°C and about 900°C.
Surface treatment is performed at temperatures of approximately 100°C, approximately 1100°C, approximately 200°C, and then treated at 600°C with pure aluminum (JISA1050) or aluminum alloy (J
This figure shows the tensile strength at a test temperature of 27° C. of a joined body in which aluminum 2 made of ISA6081) was joined using aluminum solder (foil, JIS BA4004) 4. As shown in FIG. 3, the tensile strength of the bonded body reached its maximum value at a surface treatment temperature of 900°C. Therefore, the surface treatment temperature depends on the required strength of the joining member used, but the surface treatment temperature is 800
~1100°C is considered appropriate. Further, the results of analyzing the joint surface 1a of the silicon nitride sintered body 1 subjected to this surface treatment by XPS (X-ray photoelectron spectroscopy) are shown in FIGS. 4(a) to 4(C). shows the change in the profile of each element or compound when the active metal surface treatment layer 3 is sputtered at various depths in the depth direction by Ar sputtering on the silicon nitride sintered body 1 that has been surface treated at about 900 ° C. However, the active metal surface treatment layer 3 has a thickness of about 3000λ and contains Ti. T i N, T i 5 S i 3, S
It can be seen that i is included. Therefore, it was considered that these elements or compounds react with the aluminum solder 4 to form a bond. The present invention is a method of joining a silicon nitride sintered body, which is a non-oxide ceramic that is increasingly being applied to structural members among ceramics, and aluminum, which is lightweight and soft. As mentioned above, in the conventional technique, fine powder such as Mo-Mn is mixed with an organic binder and applied to the joint surface of the ceramic, and then the mixture is coated on the joint surface of the ceramic in humidified hydrogen at 1300°C. When fired at ~1700℃, a metallized layer is formed on the bonding surface of the ceramic,
There is a method of bonding to metal by subjecting this metallized surface to Ni brushing treatment and brazing it. However, even when this method was applied to bonding silicon nitride sintered bodies, it was not possible to form a metallized layer as shown in the column of Comparative Example 1 in Table 1. This seems to be because even if oxides of Mo and W are formed, they do not dissolve into the silicon nitride sintered body, which is a non-oxide ceramic. In addition, in non-oxide ceramics, Ti. There is a so-called active metal method of brazing using Zr and its hydrides. However, even when this method was applied to bonding with aluminum, no bonding occurred as shown in the column of Comparative Example 2 in Table 1. This is considered to be because the silicon nitride sintered body and the active metal do not react at a low temperature of about 600°C. Furthermore, even if the bonding surface of the silicon nitride sintered body is coated with Ti by vapor deposition in advance and aluminum is brazed to this surface using an aluminum solder, the bonding does not occur as shown in the Comparative Example 3 column of Table 1. did not occur at all. This is because bonding strength cannot be obtained simply by physically placing an active metal on the surface of a silicon nitride sintered body, and by heat-treating it as shown in the Examples column of Table 1, the above-mentioned effect can be achieved. It is thought that unless compounds such as Ti, TiN, Ti5Si3, and Si are generated, bonding with the aluminum solder will not occur. Furthermore, in the bonding method shown in Comparative Example 4 in Table 1, in which bonding with aluminum was attempted by simply placing a Ti foil on the bonding surface of the silicon nitride sintered body, no bonding occurred at all. This is also considered to be because the silicon nitride sintered body and the active metal do not react at a low temperature of about 600°C. 1 2
この発明に係わる窒化珪素質焼結体とアルミニウムとの
接合方法では、前記窒化珪素質焼結体とアルミニウムと
を接合するに際し、前記窒化珪素質焼結体の接合面に活
性金属を接触させた状態にして１０−″Ｔｏｒｒ以下の
真空中において温度８００〜１１００℃で熱処理を行う
ことにより前記窒化珪素質焼結体に表面処理を行う第１
工程と、前記表面処理を行った窒化珪素質焼結体の接合
面にアルミニウムろうを用いてアルミニウムの接合面を
ろう付けする第２工程との２段階を採用する構成とした
から、今まで接合することができなかった窒化珪素質焼
結体とアルミニウムとの接合が強固にできるようになる
という著しく優れた効果がもたらされる。In the method for joining a silicon nitride sintered body and aluminum according to the present invention, when joining the silicon nitride sintered body and aluminum, an active metal is brought into contact with the joint surface of the silicon nitride sintered body. A first step of surface-treating the silicon nitride sintered body by heat-treating the silicon nitride sintered body at a temperature of 800 to 1100°C in a vacuum of 10-'' Torr or less.
The structure employs two steps: the first step and the second step of brazing the aluminum joint surface using an aluminum solder to the joint surface of the silicon nitride sintered body that has undergone the surface treatment. This brings about an extremely excellent effect in that it becomes possible to firmly bond the silicon nitride sintered body and aluminum, which had previously been impossible.
第１図はこの発明の一実施例による窒化珪素質焼結体と
アルミニウムとの接合体を示す部分破断説明図、第２図
（ａ）〜（ｄ）はこの発明の一実施例による窒化珪素質
焼結体とアルミニウムとの接合工程を順次示す説明図、
第３図は窒化珪素質焼結体とアルミニウムとの接合体の
表面処理温度による引張強度への影響を調べた結果を例
示するグラフ、第４図（ａ）（ｂ）（ｃ）は表面処理を
行った窒化珪素質焼結体の接合面をＸＰＳ（Ｘ線光電子
分光分析）により解析した結果を示すグラフである。
１・・・窒化珪素質焼結体、
２・・・アルミニウム、
３・・・活性金属表面処理層、
４・・・アルミニウムろう。FIG. 1 is a partially broken explanatory diagram showing a joined body of a silicon nitride sintered body and aluminum according to an embodiment of the present invention, and FIGS. 2(a) to 2(d) are silicon nitride according to an embodiment of the present invention. Explanatory diagrams sequentially showing the process of joining a quality sintered body and aluminum,
Figure 3 is a graph illustrating the results of investigating the effect of surface treatment temperature on tensile strength of a bonded body of silicon nitride sintered body and aluminum, Figure 4 (a), (b), and (c) are surface treatment It is a graph showing the results of analyzing the joint surface of the silicon nitride sintered body subjected to the above process using XPS (X-ray photoelectron spectroscopy). DESCRIPTION OF SYMBOLS 1... Silicon nitride sintered body, 2... Aluminum, 3... Active metal surface treatment layer, 4... Aluminum solder.
Claims (1)
際し、前記窒化珪素質焼結体の接合面に活性金属を接触
させた状態にして１０＾−＾３Ｔｏｒｒ以下の真空中に
おいて温度８００〜１１００℃で熱処理を行うことによ
り前記窒化珪素質焼結体に表面処理を行ったのち、前記
表面処理を行った窒化珪素質焼結体の接合面にアルミニ
ウムろうを用いて前記アルミニウムの接合面をろう付け
することを特徴とする窒化珪素質焼結体とアルミニウム
との接合方法。(1) When joining a silicon nitride sintered body and aluminum, the bonding surface of the silicon nitride sintered body is brought into contact with an active metal at a temperature of 800~3 Torr or less in a vacuum. After surface-treating the silicon nitride sintered body by heat-treating it at 1100°C, the aluminum solder is used to bond the aluminum solder to the joint surface of the silicon nitride sintered body that has undergone the surface treatment. A method of joining a silicon nitride sintered body and aluminum, characterized by brazing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32517289A JPH03187983A (en) | 1989-12-15 | 1989-12-15 | Method for cementing silicon nitride-based sintered compact to aluminum |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32517289A JPH03187983A (en) | 1989-12-15 | 1989-12-15 | Method for cementing silicon nitride-based sintered compact to aluminum |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03187983A true JPH03187983A (en) | 1991-08-15 |
Family
ID=18173814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32517289A Pending JPH03187983A (en) | 1989-12-15 | 1989-12-15 | Method for cementing silicon nitride-based sintered compact to aluminum |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03187983A (en) |
-
1989
- 1989-12-15 JP JP32517289A patent/JPH03187983A/en active Pending
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