JPH03183696A - 大型CaSi↓2単結晶の製造方法 - Google Patents

大型CaSi↓2単結晶の製造方法

Info

Publication number
JPH03183696A
JPH03183696A JP32052089A JP32052089A JPH03183696A JP H03183696 A JPH03183696 A JP H03183696A JP 32052089 A JP32052089 A JP 32052089A JP 32052089 A JP32052089 A JP 32052089A JP H03183696 A JPH03183696 A JP H03183696A
Authority
JP
Japan
Prior art keywords
single crystal
casi2
sized
production
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP32052089A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0512316B2 (enExample
Inventor
Toshiyuki Hirano
敏幸 平野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute for Materials Science
Original Assignee
National Research Institute for Metals
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Research Institute for Metals filed Critical National Research Institute for Metals
Priority to JP32052089A priority Critical patent/JPH03183696A/ja
Publication of JPH03183696A publication Critical patent/JPH03183696A/ja
Publication of JPH0512316B2 publication Critical patent/JPH0512316B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP32052089A 1989-12-12 1989-12-12 大型CaSi↓2単結晶の製造方法 Granted JPH03183696A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32052089A JPH03183696A (ja) 1989-12-12 1989-12-12 大型CaSi↓2単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32052089A JPH03183696A (ja) 1989-12-12 1989-12-12 大型CaSi↓2単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPH03183696A true JPH03183696A (ja) 1991-08-09
JPH0512316B2 JPH0512316B2 (enExample) 1993-02-17

Family

ID=18122358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32052089A Granted JPH03183696A (ja) 1989-12-12 1989-12-12 大型CaSi↓2単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPH03183696A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100480904B1 (ko) * 1998-12-24 2005-08-30 주식회사 하이닉스반도체 반응로및이를이용한단결정실리콘층형성방법
JP2011126759A (ja) * 2009-12-21 2011-06-30 Toyota Central R&D Labs Inc MnSix粉末及びその製造方法、並びに、MnSix粉末製造用CaSiy粉末及びその製造方法
JP2015093804A (ja) * 2013-11-12 2015-05-18 株式会社豊田中央研究所 Ca−Si−F系化合物、並びに、半導体及び電池

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100480904B1 (ko) * 1998-12-24 2005-08-30 주식회사 하이닉스반도체 반응로및이를이용한단결정실리콘층형성방법
JP2011126759A (ja) * 2009-12-21 2011-06-30 Toyota Central R&D Labs Inc MnSix粉末及びその製造方法、並びに、MnSix粉末製造用CaSiy粉末及びその製造方法
JP2015093804A (ja) * 2013-11-12 2015-05-18 株式会社豊田中央研究所 Ca−Si−F系化合物、並びに、半導体及び電池

Also Published As

Publication number Publication date
JPH0512316B2 (enExample) 1993-02-17

Similar Documents

Publication Publication Date Title
US4147572A (en) Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition technique
JPH03183696A (ja) 大型CaSi↓2単結晶の製造方法
Tyutyunnik et al. Lithium hydride single crystal growth by bridgman-stockbarger method using ultrasound
JPS5938190B2 (ja) Hg↓1−↓xCd↓xTeの結晶の製造方法
Fullmer et al. Crystal growth of the solid electrolyte RbAg4I5
US4764350A (en) Method and apparatus for synthesizing a single crystal of indium phosphide
US3767472A (en) Growth of ternary compounds utilizing solid, liquid and vapor phases
JPS61222911A (ja) 燐化化合物の合成方法
CN117535798A (zh) 一种二碲化钒单晶材料的液相生长方法及应用
JPH04132695A (ja) アルミナ系高融点酸化物単結晶の製造方法
JPS6222960B2 (enExample)
JPS62288106A (ja) 2−6族化合物の製造方法
JPH07101800A (ja) 1−lll−VI2 族化合物単結晶の製造方法
JPS60171296A (ja) 化合物半導体の製造方法
UA151667U (uk) СПОСІБ ВИРОЩУВАННЯ Ag<sub>7</sub>PS<sub>6</sub> МЕТОДОМ СПРЯМОВАНОЇ КРИСТАЛІЗАЦІЇ З РОЗПЛАВУ
US3302998A (en) Semiconductor compound crystals
JP3912959B2 (ja) β−FeSi2結晶の製造方法および製造装置
CN117187957A (zh) 一种a(bc)d型钙钛矿材料的制备方法
JPH0321511B2 (enExample)
Nadler et al. Growth of ZnSiAs2 by vapor transport
JP2611163B2 (ja) 化合物半導体結晶の製造方法
JPS59207816A (ja) InP結晶製造方法
JPH0375291A (ja) ZnSe単結晶の製造方法
JPH027919B2 (enExample)
JPS5973500A (ja) 化合物半導体製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term