JPH0318349B2 - - Google Patents

Info

Publication number
JPH0318349B2
JPH0318349B2 JP55175288A JP17528880A JPH0318349B2 JP H0318349 B2 JPH0318349 B2 JP H0318349B2 JP 55175288 A JP55175288 A JP 55175288A JP 17528880 A JP17528880 A JP 17528880A JP H0318349 B2 JPH0318349 B2 JP H0318349B2
Authority
JP
Japan
Prior art keywords
transistor
voltage
row line
threshold voltage
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55175288A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57100686A (en
Inventor
Hiroshi Iwahashi
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP17528880A priority Critical patent/JPS57100686A/ja
Publication of JPS57100686A publication Critical patent/JPS57100686A/ja
Publication of JPH0318349B2 publication Critical patent/JPH0318349B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP17528880A 1980-12-12 1980-12-12 Nonvolatile semiconductor memory Granted JPS57100686A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17528880A JPS57100686A (en) 1980-12-12 1980-12-12 Nonvolatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17528880A JPS57100686A (en) 1980-12-12 1980-12-12 Nonvolatile semiconductor memory

Publications (2)

Publication Number Publication Date
JPS57100686A JPS57100686A (en) 1982-06-22
JPH0318349B2 true JPH0318349B2 (enrdf_load_stackoverflow) 1991-03-12

Family

ID=15993490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17528880A Granted JPS57100686A (en) 1980-12-12 1980-12-12 Nonvolatile semiconductor memory

Country Status (1)

Country Link
JP (1) JPS57100686A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5952497A (ja) * 1982-09-17 1984-03-27 Nec Corp デコ−ダ回路
IT1214607B (it) * 1985-05-14 1990-01-18 Ates Componenti Elettron Circuito di precarica per linee di riga di un sistema di memoria, in particolare a celle programmabili.

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5831677B2 (ja) * 1979-11-26 1983-07-07 富士通株式会社 半導体記億装置

Also Published As

Publication number Publication date
JPS57100686A (en) 1982-06-22

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