JPH0318330B2 - - Google Patents
Info
- Publication number
- JPH0318330B2 JPH0318330B2 JP8619681A JP8619681A JPH0318330B2 JP H0318330 B2 JPH0318330 B2 JP H0318330B2 JP 8619681 A JP8619681 A JP 8619681A JP 8619681 A JP8619681 A JP 8619681A JP H0318330 B2 JPH0318330 B2 JP H0318330B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon single
- single crystal
- semiconductor device
- defects
- defect density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 36
- 229910052710 silicon Inorganic materials 0.000 claims description 36
- 239000010703 silicon Substances 0.000 claims description 36
- 230000007547 defect Effects 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8619681A JPS57201032A (en) | 1981-06-04 | 1981-06-04 | Silicon single crystal semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8619681A JPS57201032A (en) | 1981-06-04 | 1981-06-04 | Silicon single crystal semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57201032A JPS57201032A (en) | 1982-12-09 |
| JPH0318330B2 true JPH0318330B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-03-12 |
Family
ID=13880021
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8619681A Granted JPS57201032A (en) | 1981-06-04 | 1981-06-04 | Silicon single crystal semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57201032A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6031231A (ja) * | 1983-07-29 | 1985-02-18 | Toshiba Corp | 半導体基体の製造方法 |
| US4851358A (en) * | 1988-02-11 | 1989-07-25 | Dns Electronic Materials, Inc. | Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing |
| US4868133A (en) * | 1988-02-11 | 1989-09-19 | Dns Electronic Materials, Inc. | Semiconductor wafer fabrication with improved control of internal gettering sites using RTA |
-
1981
- 1981-06-04 JP JP8619681A patent/JPS57201032A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57201032A (en) | 1982-12-09 |