JPH0317903B2 - - Google Patents
Info
- Publication number
- JPH0317903B2 JPH0317903B2 JP56501203A JP50120381A JPH0317903B2 JP H0317903 B2 JPH0317903 B2 JP H0317903B2 JP 56501203 A JP56501203 A JP 56501203A JP 50120381 A JP50120381 A JP 50120381A JP H0317903 B2 JPH0317903 B2 JP H0317903B2
- Authority
- JP
- Japan
- Prior art keywords
- deposited
- coating
- substrate
- deposition
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000576 coating method Methods 0.000 claims description 235
- 239000000758 substrate Substances 0.000 claims description 221
- 239000011248 coating agent Substances 0.000 claims description 192
- 239000000463 material Substances 0.000 claims description 145
- 238000000151 deposition Methods 0.000 claims description 129
- 230000008021 deposition Effects 0.000 claims description 86
- 238000000034 method Methods 0.000 claims description 81
- 230000007547 defect Effects 0.000 claims description 33
- 230000009643 growth defect Effects 0.000 claims description 33
- 238000004544 sputter deposition Methods 0.000 claims description 31
- 238000010438 heat treatment Methods 0.000 claims description 25
- 230000004907 flux Effects 0.000 claims description 22
- 239000011148 porous material Substances 0.000 claims description 17
- 238000005240 physical vapour deposition Methods 0.000 claims description 15
- 230000002829 reductive effect Effects 0.000 claims description 10
- 230000007423 decrease Effects 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 6
- 238000011282 treatment Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 4
- 238000009825 accumulation Methods 0.000 claims description 3
- 230000035515 penetration Effects 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 230000009466 transformation Effects 0.000 claims 1
- 238000000844 transformation Methods 0.000 claims 1
- 230000008569 process Effects 0.000 description 20
- 239000010408 film Substances 0.000 description 18
- 230000001154 acute effect Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 239000007789 gas Substances 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 238000000879 optical micrograph Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 8
- 239000012071 phase Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000005755 formation reaction Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910000601 superalloy Inorganic materials 0.000 description 4
- -1 argon ions Chemical class 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000007733 ion plating Methods 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000011253 protective coating Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 235000019987 cider Nutrition 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/9335—Product by special process
- Y10S428/938—Vapor deposition or gas diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12014—All metal or with adjacent metals having metal particles
- Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
- Y10T428/12063—Nonparticulate metal component
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Conductive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/131,922 US4336118A (en) | 1980-03-21 | 1980-03-21 | Methods for making deposited films with improved microstructures |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57500434A JPS57500434A (en, 2012) | 1982-03-11 |
| JPH0317903B2 true JPH0317903B2 (en, 2012) | 1991-03-11 |
Family
ID=22451613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56501203A Expired JPH0317903B2 (en, 2012) | 1980-03-21 | 1981-03-13 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US4336118A (en, 2012) |
| EP (1) | EP0048732A1 (en, 2012) |
| JP (1) | JPH0317903B2 (en, 2012) |
| CA (1) | CA1156968A (en, 2012) |
| DE (1) | DE3140611T1 (en, 2012) |
| GB (1) | GB2083505B (en, 2012) |
| WO (1) | WO1981002694A1 (en, 2012) |
Families Citing this family (64)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4520039A (en) * | 1982-09-23 | 1985-05-28 | Sovonics Solar Systems | Compositionally varied materials and method for synthesizing the materials |
| US4664960A (en) * | 1982-09-23 | 1987-05-12 | Energy Conversion Devices, Inc. | Compositionally varied materials and method for synthesizing the materials |
| US4705613A (en) * | 1984-04-16 | 1987-11-10 | Eastman Kodak Company | Sputtering method of making thin film head having improved saturation magnetization |
| US4539089A (en) * | 1984-06-29 | 1985-09-03 | International Business Machines Corporation | Method for depositing material with nanometer dimensions |
| EP0202572B1 (en) * | 1985-05-13 | 1993-12-15 | Nippon Telegraph And Telephone Corporation | Method for forming a planarized aluminium thin film |
| US4654269A (en) * | 1985-06-21 | 1987-03-31 | Fairchild Camera & Instrument Corp. | Stress relieved intermediate insulating layer for multilayer metalization |
| CH665428A5 (de) * | 1985-07-26 | 1988-05-13 | Balzers Hochvakuum | Verfahren zur beschichtung von mikrovertiefungen. |
| US4891112A (en) * | 1985-11-12 | 1990-01-02 | Eastman Kodak Company | Sputtering method for reducing hillocking in aluminum layers formed on substrates |
| EP0228910B1 (en) * | 1985-12-28 | 1991-07-31 | Canon Kabushiki Kaisha | Apparatus for forming deposited film |
| DE3601439C1 (de) * | 1986-01-20 | 1987-04-09 | Glyco Metall Werke | Schichtverbundwerkstoff,insbesondere fuer Gleit- und Reibelemente,sowie Verfahren zu seiner Herstellung |
| US4690746A (en) * | 1986-02-24 | 1987-09-01 | Genus, Inc. | Interlayer dielectric process |
| US4756810A (en) * | 1986-12-04 | 1988-07-12 | Machine Technology, Inc. | Deposition and planarizing methods and apparatus |
| JP2602276B2 (ja) * | 1987-06-30 | 1997-04-23 | 株式会社日立製作所 | スパツタリング方法とその装置 |
| JP2501118B2 (ja) * | 1988-06-17 | 1996-05-29 | 忠弘 大見 | 半導体装置の製造方法 |
| US4944858A (en) * | 1988-12-08 | 1990-07-31 | United Technologies Corporation | Method for applying diffusion aluminide coating |
| US4988421A (en) * | 1989-01-12 | 1991-01-29 | Ford Motor Company | Method of toughening diamond coated tools |
| US5419822A (en) * | 1989-02-28 | 1995-05-30 | Raytheon Company | Method for applying a thin adherent layer |
| KR950009939B1 (ko) * | 1990-11-30 | 1995-09-01 | 가부시끼가이샤 히다찌세이사꾸쇼 | 박막 형성 방법 및 그에 의해 형성된 반도체 장치 |
| US5556713A (en) * | 1995-04-06 | 1996-09-17 | Southwest Research Institute | Diffusion barrier for protective coatings |
| US6264812B1 (en) * | 1995-11-15 | 2001-07-24 | Applied Materials, Inc. | Method and apparatus for generating a plasma |
| US6254746B1 (en) | 1996-05-09 | 2001-07-03 | Applied Materials, Inc. | Recessed coil for generating a plasma |
| US6368469B1 (en) | 1996-05-09 | 2002-04-09 | Applied Materials, Inc. | Coils for generating a plasma and for sputtering |
| KR100489918B1 (ko) * | 1996-05-09 | 2005-08-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마발생및스퍼터링용코일 |
| US5866204A (en) | 1996-07-23 | 1999-02-02 | The Governors Of The University Of Alberta | Method of depositing shadow sculpted thin films |
| US6254737B1 (en) | 1996-10-08 | 2001-07-03 | Applied Materials, Inc. | Active shield for generating a plasma for sputtering |
| US6190513B1 (en) | 1997-05-14 | 2001-02-20 | Applied Materials, Inc. | Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition |
| US5961793A (en) * | 1996-10-31 | 1999-10-05 | Applied Materials, Inc. | Method of reducing generation of particulate matter in a sputtering chamber |
| TW358964B (en) * | 1996-11-21 | 1999-05-21 | Applied Materials Inc | Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma |
| EP0909340B1 (de) * | 1996-12-06 | 2003-03-19 | Theva Dünnschichttechnik GmbH | Schichtmaterial sowie vorrichtung und verfahren zum herstellen von schichtmaterial |
| US6451179B1 (en) | 1997-01-30 | 2002-09-17 | Applied Materials, Inc. | Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasma |
| US6599399B2 (en) * | 1997-03-07 | 2003-07-29 | Applied Materials, Inc. | Sputtering method to generate ionized metal plasma using electron beams and magnetic field |
| US6103070A (en) * | 1997-05-14 | 2000-08-15 | Applied Materials, Inc. | Powered shield source for high density plasma |
| US6210539B1 (en) | 1997-05-14 | 2001-04-03 | Applied Materials, Inc. | Method and apparatus for producing a uniform density plasma above a substrate |
| US6579426B1 (en) | 1997-05-16 | 2003-06-17 | Applied Materials, Inc. | Use of variable impedance to control coil sputter distribution |
| US6361661B2 (en) | 1997-05-16 | 2002-03-26 | Applies Materials, Inc. | Hybrid coil design for ionized deposition |
| US6077402A (en) * | 1997-05-16 | 2000-06-20 | Applied Materials, Inc. | Central coil design for ionized metal plasma deposition |
| US6652717B1 (en) | 1997-05-16 | 2003-11-25 | Applied Materials, Inc. | Use of variable impedance to control coil sputter distribution |
| AU8526098A (en) * | 1997-07-30 | 1999-02-22 | Governors Of The University Of Alberta, The | Glancing angle deposition of thin films |
| US6235169B1 (en) | 1997-08-07 | 2001-05-22 | Applied Materials, Inc. | Modulated power for ionized metal plasma deposition |
| US6375810B2 (en) | 1997-08-07 | 2002-04-23 | Applied Materials, Inc. | Plasma vapor deposition with coil sputtering |
| US6345588B1 (en) | 1997-08-07 | 2002-02-12 | Applied Materials, Inc. | Use of variable RF generator to control coil voltage distribution |
| US5902461A (en) * | 1997-09-03 | 1999-05-11 | Applied Materials, Inc. | Apparatus and method for enhancing uniformity of a metal film formed on a substrate with the aid of an inductively coupled plasma |
| US6143141A (en) * | 1997-09-12 | 2000-11-07 | Southwest Research Institute | Method of forming a diffusion barrier for overlay coatings |
| US6565717B1 (en) | 1997-09-15 | 2003-05-20 | Applied Materials, Inc. | Apparatus for sputtering ionized material in a medium to high density plasma |
| US6042700A (en) * | 1997-09-15 | 2000-03-28 | Applied Materials, Inc. | Adjustment of deposition uniformity in an inductively coupled plasma source |
| US6023038A (en) * | 1997-09-16 | 2000-02-08 | Applied Materials, Inc. | Resistive heating of powered coil to reduce transient heating/start up effects multiple loadlock system |
| US6280579B1 (en) | 1997-12-19 | 2001-08-28 | Applied Materials, Inc. | Target misalignment detector |
| US6506287B1 (en) | 1998-03-16 | 2003-01-14 | Applied Materials, Inc. | Overlap design of one-turn coil |
| US6254738B1 (en) | 1998-03-31 | 2001-07-03 | Applied Materials, Inc. | Use of variable impedance having rotating core to control coil sputter distribution |
| TW434636B (en) | 1998-07-13 | 2001-05-16 | Applied Komatsu Technology Inc | RF matching network with distributed outputs |
| US6231725B1 (en) | 1998-08-04 | 2001-05-15 | Applied Materials, Inc. | Apparatus for sputtering material onto a workpiece with the aid of a plasma |
| US6238528B1 (en) | 1998-10-13 | 2001-05-29 | Applied Materials, Inc. | Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source |
| US6217718B1 (en) | 1999-02-17 | 2001-04-17 | Applied Materials, Inc. | Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma |
| US6409890B1 (en) | 1999-07-27 | 2002-06-25 | Applied Materials, Inc. | Method and apparatus for forming a uniform layer on a workpiece during sputtering |
| US6921579B2 (en) * | 2000-09-11 | 2005-07-26 | Cardinal Cg Company | Temporary protective covers |
| US9180599B2 (en) * | 2004-09-08 | 2015-11-10 | Bic-Violex S.A. | Method of deposition of a layer on a razor blade edge and razor blade |
| US20080011599A1 (en) | 2006-07-12 | 2008-01-17 | Brabender Dennis M | Sputtering apparatus including novel target mounting and/or control |
| US7790604B2 (en) * | 2007-08-20 | 2010-09-07 | Applied Materials, Inc. | Krypton sputtering of thin tungsten layer for integrated circuits |
| KR101475103B1 (ko) * | 2007-10-24 | 2014-12-22 | 세키스이가가쿠 고교가부시키가이샤 | 도전성 미립자, 이방성 도전 재료, 접속 구조체 및 도전성 미립자의 제조 방법 |
| DE102008023591A1 (de) * | 2008-05-14 | 2009-11-19 | Mtu Aero Engines Gmbh | Schutzschicht und Verfahren zum Aufbringen einer Schutzschicht |
| USD709596S1 (en) | 2014-02-21 | 2014-07-22 | Access Business Group International Llc | Auxiliary faucet |
| FR3025929B1 (fr) * | 2014-09-17 | 2016-10-21 | Commissariat Energie Atomique | Gaines de combustible nucleaire, procedes de fabrication et utilisation contre l'oxydation. |
| WO2017100118A1 (en) | 2015-12-11 | 2017-06-15 | Cardinal Cg Company | Method of coating both sides of a substrate |
| EP3541762B1 (en) | 2016-11-17 | 2022-03-02 | Cardinal CG Company | Static-dissipative coating technology |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3021271A (en) * | 1959-04-27 | 1962-02-13 | Gen Mills Inc | Growth of solid layers on substrates which are kept under ion bombardment before and during deposition |
| US3736242A (en) * | 1968-01-31 | 1973-05-29 | Bell Telephone Labor Inc | Sputtering technique |
| US3639151A (en) * | 1969-03-13 | 1972-02-01 | United Aircraft Corp | Vapor randomization in vacuum deposition of coatings |
| US3628994A (en) * | 1969-03-13 | 1971-12-21 | United Aircraft Corp | Method of coating a plurality of substrates by vapor deposition |
| GB1365492A (en) * | 1971-02-05 | 1974-09-04 | Triplex Safety Glass Co | Metal oxide films |
| US4006268A (en) * | 1975-03-17 | 1977-02-01 | Airco, Inc. | Vapor collimation in vacuum deposition of coatings |
| US3979273A (en) * | 1975-05-27 | 1976-09-07 | United Technologies Corporation | Method of forming aluminide coatings on nickel-, cobalt-, and iron-base alloys |
| US4036723A (en) * | 1975-08-21 | 1977-07-19 | International Business Machines Corporation | RF bias sputtering method for producing insulating films free of surface irregularities |
| US4038171A (en) * | 1976-03-31 | 1977-07-26 | Battelle Memorial Institute | Supported plasma sputtering apparatus for high deposition rate over large area |
| US4150905A (en) * | 1977-02-09 | 1979-04-24 | Ultramet | Spheres obtained by vapor deposition for use in ball point pens |
| US4124472A (en) * | 1977-02-28 | 1978-11-07 | Riegert Richard P | Process for the protection of wear surfaces |
-
1980
- 1980-03-21 US US06/131,922 patent/US4336118A/en not_active Expired - Lifetime
-
1981
- 1981-03-13 WO PCT/US1981/000314 patent/WO1981002694A1/en active Application Filing
- 1981-03-13 GB GB8134630A patent/GB2083505B/en not_active Expired
- 1981-03-13 EP EP81900902A patent/EP0048732A1/en not_active Withdrawn
- 1981-03-13 DE DE813140611T patent/DE3140611T1/de active Granted
- 1981-03-13 JP JP56501203A patent/JPH0317903B2/ja not_active Expired
- 1981-03-20 CA CA000373474A patent/CA1156968A/en not_active Expired
-
1982
- 1982-02-22 US US06/350,738 patent/US4468437A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| GB2083505A (en) | 1982-03-24 |
| CA1156968A (en) | 1983-11-15 |
| GB2083505B (en) | 1985-01-30 |
| WO1981002694A1 (en) | 1981-10-01 |
| DE3140611C2 (en, 2012) | 1990-01-11 |
| JPS57500434A (en, 2012) | 1982-03-11 |
| US4336118A (en) | 1982-06-22 |
| US4468437A (en) | 1984-08-28 |
| EP0048732A1 (en) | 1982-04-07 |
| DE3140611T1 (de) | 1982-07-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0317903B2 (en, 2012) | ||
| TWI839710B (zh) | 用於pvd濺射腔室的可偏壓通量優化器/準直器 | |
| US4756810A (en) | Deposition and planarizing methods and apparatus | |
| EP2084307B1 (en) | Multilayer nitride-containing coatings | |
| JPH09217168A (ja) | 金属及びセラミック基体のコーティング方法 | |
| US8821697B2 (en) | Silver selenide sputtered films and method and apparatus for controlling defect formation in silver selenide sputtered films | |
| US20050072668A1 (en) | Sputter target having modified surface texture | |
| JPS6378740A (ja) | 特に、滑り軸受のための、拡散阻止層を備えた層複合材料並びにその製造方法 | |
| EP2758561B1 (en) | Coated cutting tool | |
| JPH10229058A (ja) | コーティング付き堆積チャンバ装置 | |
| EP1639149B1 (en) | A method for forming a superhard amorphous carbon coating in vacuum | |
| Musil et al. | Deposition of copper films by unbalanced dc magnetron sputtering | |
| KR101739328B1 (ko) | 다기능성 코팅재 및 다기능성 박막층 형성 방법 | |
| JP3544907B2 (ja) | マグネトロンスパッタ装置 | |
| Mawella et al. | Sputtered alloy coatings by codeposition: Effects of bias voltage | |
| US6774009B1 (en) | Silicon target assembly | |
| US5013274A (en) | Process for restoring locally damaged parts, particularly anticathodes | |
| JP7262235B2 (ja) | スパッタリング装置及びスパッタリング方法 | |
| JP3439993B2 (ja) | マグネトロンスパッタ装置 | |
| US6303994B1 (en) | Method and apparatus for reducing the first wafer effect | |
| JPH07113172A (ja) | 薄膜加工用コリメーター、薄膜加工装置、薄膜加工方法並びに半導体装置の配線形成方法 | |
| JP4396885B2 (ja) | マグネトロンスパッタ装置 | |
| EP0634779A1 (en) | Collimation chamber with rotatable pedestal | |
| EP0415206A2 (en) | Production method of metal foil and metal foil produced by the method | |
| JPH0314905B2 (en, 2012) |