JPH03177363A - Method for burning semiconductor ceramics - Google Patents

Method for burning semiconductor ceramics

Info

Publication number
JPH03177363A
JPH03177363A JP1316859A JP31685989A JPH03177363A JP H03177363 A JPH03177363 A JP H03177363A JP 1316859 A JP1316859 A JP 1316859A JP 31685989 A JP31685989 A JP 31685989A JP H03177363 A JPH03177363 A JP H03177363A
Authority
JP
Japan
Prior art keywords
sheath
burning
firing
pod
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1316859A
Other languages
Japanese (ja)
Inventor
Masatsune Oguro
小黒 正恒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1316859A priority Critical patent/JPH03177363A/en
Publication of JPH03177363A publication Critical patent/JPH03177363A/en
Pending legal-status Critical Current

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  • Furnace Charging Or Discharging (AREA)
  • Thermistors And Varistors (AREA)

Abstract

PURPOSE:To reduce dispersion in resistance value in a burning sheath in burning a large amount thereof by covering a perforated auxiliary sheath on an opening formed in a sheath bottom in burning a ceramic compact sensitive to a reducing atmosphere on placing powder on a setter in the burning sheath. CONSTITUTION:An opening 17 having an area corresponding to about 1% based on the bottom area is provided in the bottom of a burning sheath 11 and covered with an auxiliary sheath 19 perforated in a honeycomb form. Corrugated setters 12 are then placed on the bottom of the sheath 11 and placing powder 13 is laid thereon to arrange ring compacts 14 composed of a semiconductor ceramic material thereon. Further, zirconia side plates 18 are arranged on the inner wall surfaces of the sheath 11 for filling thereof so as to prevent the compacts 14 from directly touching the inner walls of the sheath 11. A lid 16 is placed through a spacer 15 on the top opening of the sheath 11 to carry out burning in the air in a tunnel kiln. Air flows through the opening 17 to reduce the dispersion in resistance value in the sheath 11 according to the aforementioned method.

Description

【発明の詳細な説明】 産業上の利用分野 本発明はチタン酸バリウム系半導体磁器のように焼成時
の還元性雰囲気に敏感な半導体セラミックスの焼成方法
に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for firing semiconductor ceramics that are sensitive to a reducing atmosphere during firing, such as barium titanate semiconductor ceramics.

従来の技術 従来より、焼成時の還元性雰囲気に敏感なセラミックス
であるチタン酸バリウム(BaTiO:+)系半導体磁
器は、キュリー点付近で抵抗値が急激に増加を示す正の
抵抗温度係数を示す特徴を有しており、かかる特性を利
用して、定温発熱体素子9電流制御用素子、温度制御用
素子などに広く応用されている。
Conventional technology Barium titanate (BaTiO:+)-based semiconductor porcelain, which is a ceramic that is sensitive to the reducing atmosphere during firing, exhibits a positive temperature coefficient of resistance that shows a rapid increase in resistance near the Curie point. Utilizing these characteristics, it is widely applied to constant temperature heating element 9, current control element, temperature control element, etc.

そして、このようなりaTiO:+系半導体磁器は、B
aCO3,T i 02.PbO,S rcO3゜など
の主原料と、A j’ 203+  S iO2などの
添加物と、Y2O3,Nb2O5,希土類などの半導体
化材とを秤量配合し、湿式混合した後、1050〜12
00℃の温度で大気中で2時間程度仮焼し、次いでそれ
をボールミルで粉砕し、バインダーを加えて造粒し、そ
の後所定の形状に圧縮成形し、次にその成形体を電気炉
を用いて1300〜1350℃の温度で大気中で2時間
程度焼践して得られる。
Then, the aTiO:+ semiconductor porcelain becomes B
aCO3, T i 02. Main raw materials such as PbO, SrcO3゜, additives such as Aj' 203+ SiO2, and semiconducting materials such as Y2O3, Nb2O5, rare earths, etc. are weighed and blended, wet-mixed, and then 1050~12
It is calcined in the air at a temperature of 00°C for about 2 hours, then crushed in a ball mill, added with a binder and granulated, then compression molded into a predetermined shape, and then the molded body is molded in an electric furnace. It is obtained by baking it in the air at a temperature of 1300 to 1350°C for about 2 hours.

従来、BaTiC)+系半導体磁器の焼成方法は、第4
図に示すような構成で行われていた。第4図において、
1は焼成用サヤ、2は波形セッター3はZrO2からな
る敷粉、4はBaTi0:+系半導体磁器からなるリン
グ形状成形体、5はスペーサ、6はフタ、7はジルコニ
ア側板である。
Conventionally, the firing method for BaTiC)+ based semiconductor porcelain is based on the fourth method.
The configuration was as shown in the figure. In Figure 4,
1 is a firing sheath, 2 is a corrugated setter 3 is a bedding powder made of ZrO2, 4 is a ring-shaped molded body made of BaTi0:+ semiconductor porcelain, 5 is a spacer, 6 is a lid, and 7 is a zirconia side plate.

そして、BaTi0.+系半導体磁器は、焼成により抵
抗値特性が左右されるので、その焼成工程は重要である
。また、大量焼成にはトンネル炉が一般的に用いられ、
サヤ詰め姿勢は横並へ、バラ詰めなどで焼成される。
And BaTi0. The firing process of + series semiconductor porcelain is important because its resistance value characteristics are affected by firing. Additionally, tunnel furnaces are commonly used for mass firing.
The pods are packed horizontally and fired in bulk.

発明が解決しようとする課題 上記のような従来の構成では、成形体の形状がリング形
状を取る時、成形体のバインダ分解によって発生する還
元性ガスにより、成形体が部分的に還元されたり、サヤ
内部と壁側との間の熱分布の不均一性により、成形体の
再酸化が均一に行われず、焼成時の還元性雰囲気に敏感
なセラミックスであるB a T i O3系半導体磁
器のサヤ内における抵抗値バラツキが大きくなるという
問題があった。
Problems to be Solved by the Invention In the conventional configuration as described above, when the molded body takes a ring shape, the molded body may be partially reduced by the reducing gas generated by the decomposition of the binder of the molded body. Due to non-uniform heat distribution between the inside of the pod and the wall side, reoxidation of the molded body does not occur uniformly. There was a problem in that the variation in resistance value within the range increased.

本発明はこのような課題に鑑み、大量焼成において、サ
ヤ内における抵抗値バラツキを低減することのできる半
導体セラミックスの焼成方法を提供することを目的とす
るものである。
In view of these problems, it is an object of the present invention to provide a method for firing semiconductor ceramics that can reduce resistance value variations within a pod during mass firing.

課題を解決するための手段 この課題を解決するために本発明は、底部に開孔を設け
、その間孔部上に側面にハニカム状に孔の開いた補助用
サヤをかぶせた焼成用サヤの中にセンターを置き、その
上に敷かれた敷粉上に焼成時の還元性雰囲気に敏感な半
導体セラミックス材料よりなる成形体を並べ、上記焼成
用サヤの上面開口部にフタをして上記成形体を焼成する
ようにしたものである。
Means for Solving the Problems In order to solve this problem, the present invention provides a firing pod which has holes in its bottom and covers the holes with an auxiliary pod having honeycomb-like holes on the sides. A molded body made of a semiconductor ceramic material that is sensitive to the reducing atmosphere during firing is placed on top of the powder spread on the center, and a lid is placed on the upper opening of the firing pod to remove the molded body. It is designed to be fired.

作用 本発明は上記した構成により、サヤ底部に開孔を設け、
その間孔部上に側面にハニカム状に孔の開いた補助用サ
ヤをかぶせることにより、空気の流通路が設定され、バ
インダ分解により発生する還元性ガスの抜は方がスムー
ズになり、かつサヤ内の熱分布の均一性、再酸化の均一
性が進み、サヤ内の抵抗値バラツキを低減することがで
きることとなる。
Function The present invention has the above-mentioned configuration, with an opening provided at the bottom of the pod,
By covering the auxiliary pod with honeycomb-like holes on the side over the hole between the holes, an air flow path is established, and reducing gas generated by binder decomposition can be smoothly removed, and inside the pod. The uniformity of the heat distribution and the uniformity of reoxidation are improved, and it is possible to reduce the variation in resistance value within the pod.

実施例 第1図は本発明の一実施例によるチタン酸バリウム系半
導体磁器の焼成方法を説明するための断面図である。第
1図において、1■は焼成用サヤ、12は波形セッター
、13はZrO2からなる敷粉、14はBaTiO3系
半導体磁器からなるリング形状成形体、15はスペーサ
、16はフタ、17は焼成用サヤ11の底部に設けられ
た開孔、18はジルコニア側板、19は第2図に示すよ
うに側面にハニカム状に孔の開いた補助用サヤであり、
上記開孔17部上にかぶせられている。そして、第1図
に示すように、例えば縦270 mm X横270帥×
高さ90帥の焼成用サヤ11の底部に底面積の1%に当
る開孔17を設け、その開孔17部上に高さ60mmの
側面にハニカム状に孔の開いた補助用サヤ19(孔面積
は側面面積の1%〜5%)をかぶせる。また、焼成用サ
ヤ11の底部上にアルミナからなる波形セッター12を
置き、その上にZrO2からなる敷粉13を載せ、その
敷粉13上にリング形状成形体14を並へる。さらに、
焼成用サヤ11の内壁面にジルコニア側板18を並へ、
リング形状成形体14が直接焼成用サヤ11の内壁にあ
たらないようにサヤ詰する。さらに、スペーサ15を介
してフタ16を焼成用サヤ11の上面開口部に載せた姿
勢で、温度1300°C〜1350℃のトンネル炉で大
気中でもって焼成した。
Embodiment FIG. 1 is a sectional view for explaining a method of firing barium titanate-based semiconductor porcelain according to an embodiment of the present invention. In Fig. 1, 1■ is a sheath for firing, 12 is a waveform setter, 13 is a bedding powder made of ZrO2, 14 is a ring-shaped molded body made of BaTiO3 semiconductor porcelain, 15 is a spacer, 16 is a lid, and 17 is for baking. An opening provided at the bottom of the sheath 11, 18 is a zirconia side plate, and 19 is an auxiliary sheath with honeycomb-shaped holes on the side as shown in FIG.
It is placed over the opening 17. Then, as shown in Figure 1, for example, 270 mm long x 270 mm wide x
An opening 17 corresponding to 1% of the bottom area is provided at the bottom of the firing pod 11 with a height of 90 mm, and an auxiliary pod 19 ( The hole area is covered by 1% to 5% of the side surface area. Further, a wave setter 12 made of alumina is placed on the bottom of the firing sheath 11, a bedding powder 13 made of ZrO2 is placed thereon, and ring-shaped molded bodies 14 are arranged on the bedding powder 13. moreover,
A zirconia side plate 18 is placed on the inner wall surface of the firing sheath 11,
The ring-shaped molded body 14 is packed in the pod so that it does not directly contact the inner wall of the firing pod 11. Further, the lid 16 was placed on the upper opening of the firing pod 11 via the spacer 15, and fired in the atmosphere in a tunnel furnace at a temperature of 1300°C to 1350°C.

ここで開孔17の大きさは、広すぎると焼成用サヤ11
の強度が落ち、かつサヤ11に詰めるリング形状成形体
14の数が減少し生産性が落ちる。逆に、狭すぎると空
気の流通が悪くなり、サヤ11内の抵抗値バラツキが低
減する効果はなくなる。また、側面にハニカム状に孔の
開いた補助用サヤ19の側面孔面積は側面積のl〜5%
か良い。即ち、1%未満では抵抗値バラツキを低減させ
る効果はない。一方、5%を超えて広くなると強度が落
ちるため、1〜5%程度が良い。次に、上記のようにし
て焼成したBaTi0:+系半導体磁器のサヤ内におけ
る抵抗値バラツキを従来古注と本発明方法とで比較する
と、第3図に示すように本発明方法によるものは、サヤ
内における抵抗値バラツキが著しく小さいことがわかる
。ここで、バラツキ表示としては、(シグマ/平均値)
xloo(%)を用いた。
Here, if the size of the opening 17 is too wide, the firing pod 11
strength is reduced, and the number of ring-shaped molded bodies 14 packed into the pod 11 is reduced, resulting in a drop in productivity. On the other hand, if it is too narrow, air circulation will be poor and the effect of reducing resistance value variations within the sheath 11 will be lost. In addition, the side hole area of the auxiliary pod 19 with honeycomb-shaped holes on the side is 1 to 5% of the side surface area.
Good. That is, if it is less than 1%, there is no effect of reducing resistance value variation. On the other hand, if the width exceeds 5%, the strength decreases, so a range of about 1 to 5% is preferable. Next, when comparing the resistance value variation within the pod of the BaTi0:+ semiconductor porcelain fired as described above between the conventional old pottery and the method of the present invention, as shown in FIG. It can be seen that the variation in resistance within the pod is extremely small. Here, the variation display is (sigma/average value)
xloo (%) was used.

なお、本発明は上記実施例のBaTi0:+系半導体磁
器に限定されるものではなく、焼成時の還元性雰囲気に
敏感なその他の半導体セラミックスにも適用できるもの
である。
Note that the present invention is not limited to the BaTi0:+ semiconductor ceramics of the above embodiments, but can also be applied to other semiconductor ceramics that are sensitive to the reducing atmosphere during firing.

発明の効果 以上のように本発明によれば、チタン酸バリウム系半導
体磁器などのように焼成時の還元性雰囲気に敏感な半導
体セラミックスのサヤ内における抵抗値バラツキを小さ
くし、安定して焼成が可能であり、生産性向上に寄与す
るという効果が得られる。
Effects of the Invention As described above, according to the present invention, it is possible to reduce the variation in the resistance value within the pod of semiconductor ceramics, such as barium titanate-based semiconductor ceramics, which are sensitive to the reducing atmosphere during firing, and to ensure stable firing. It is possible, and the effect of contributing to productivity improvement can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例によるチタン酸バリウム系半
導体磁器の焼成方法を説明するための断面図、第2図は
本発明方法において用いる補助用サヤの斜視図、第3図
は本発明方法と従来方法におけるサヤ内の抵抗値バラツ
キを比較して示す図、第4図は従来方法の焼成方法を説
明するための断面図である。 11・・・・・・焼成用サヤ、12・・・・・・波形セ
ッター13・・・・・・敷粉、14・・・・・・リング
形状成形体、15・・・・・・スペーサ、16・・・・
・・フタ、17・・・・・・開孔、18・・・・・・ジ
ルコニア側板、19・・・・・・側面にハニカム状に孔
の開いたフタ。
FIG. 1 is a cross-sectional view for explaining a method of firing barium titanate-based semiconductor porcelain according to an embodiment of the present invention, FIG. 2 is a perspective view of an auxiliary sheath used in the method of the present invention, and FIG. 3 is a diagram of the present invention. FIG. 4 is a cross-sectional view for explaining the firing method of the conventional method. 11... Saya for firing, 12... Corrugated setter 13... Powder, 14... Ring shaped molded body, 15... Spacer , 16...
... Lid, 17... Openings, 18... Zirconia side plate, 19... Lid with honeycomb-shaped holes on the side.

Claims (1)

【特許請求の範囲】[Claims]  底部に開孔を設け、その開孔部上に側面にハニカム状
に孔の開いた補助用サヤをかぶせた焼成用サヤの中にセ
ッターを置き、その上に敷かれた敷粉上に焼成時の還元
性雰囲気に敏感な半導体セラミックス材料よりなる成形
体を並べ、上記焼成用サヤの上面開口部にフタをして上
記成形体を焼成することを特徴とする半導体セラミック
スの焼成方法。
A setter is placed inside a firing pod with a hole in the bottom and an auxiliary pod with honeycomb-shaped holes on the side is placed over the opening, and the setter is placed on top of the bedding powder during firing. A method for firing semiconductor ceramics, comprising arranging molded bodies made of a semiconductor ceramic material sensitive to a reducing atmosphere, and firing the molded bodies by placing a lid on the upper opening of the firing pod.
JP1316859A 1989-12-06 1989-12-06 Method for burning semiconductor ceramics Pending JPH03177363A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1316859A JPH03177363A (en) 1989-12-06 1989-12-06 Method for burning semiconductor ceramics

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1316859A JPH03177363A (en) 1989-12-06 1989-12-06 Method for burning semiconductor ceramics

Publications (1)

Publication Number Publication Date
JPH03177363A true JPH03177363A (en) 1991-08-01

Family

ID=18081708

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1316859A Pending JPH03177363A (en) 1989-12-06 1989-12-06 Method for burning semiconductor ceramics

Country Status (1)

Country Link
JP (1) JPH03177363A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005321161A (en) * 2004-05-11 2005-11-17 Mitsui Mining & Smelting Co Ltd Kiln tool for baking
EP2100675A1 (en) * 2007-12-03 2009-09-16 Howmet Corporation Apparatus and method for use in firing cores

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005321161A (en) * 2004-05-11 2005-11-17 Mitsui Mining & Smelting Co Ltd Kiln tool for baking
EP2100675A1 (en) * 2007-12-03 2009-09-16 Howmet Corporation Apparatus and method for use in firing cores

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