JPH0317225B2 - - Google Patents

Info

Publication number
JPH0317225B2
JPH0317225B2 JP59029130A JP2913084A JPH0317225B2 JP H0317225 B2 JPH0317225 B2 JP H0317225B2 JP 59029130 A JP59029130 A JP 59029130A JP 2913084 A JP2913084 A JP 2913084A JP H0317225 B2 JPH0317225 B2 JP H0317225B2
Authority
JP
Japan
Prior art keywords
layer
semiconductor substrate
recessed
region
gate region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59029130A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60171770A (ja
Inventor
Hiroaki Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nihon Inter Electronics Corp
Original Assignee
Nihon Inter Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nihon Inter Electronics Corp filed Critical Nihon Inter Electronics Corp
Priority to JP59029130A priority Critical patent/JPS60171770A/ja
Publication of JPS60171770A publication Critical patent/JPS60171770A/ja
Publication of JPH0317225B2 publication Critical patent/JPH0317225B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors

Landscapes

  • Thyristors (AREA)
JP59029130A 1984-02-17 1984-02-17 半導体装置の製造方法 Granted JPS60171770A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59029130A JPS60171770A (ja) 1984-02-17 1984-02-17 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59029130A JPS60171770A (ja) 1984-02-17 1984-02-17 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60171770A JPS60171770A (ja) 1985-09-05
JPH0317225B2 true JPH0317225B2 (enrdf_load_stackoverflow) 1991-03-07

Family

ID=12267711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59029130A Granted JPS60171770A (ja) 1984-02-17 1984-02-17 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60171770A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS60171770A (ja) 1985-09-05

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