JPH03167529A - Active matrix type liquid crystal display device - Google Patents

Active matrix type liquid crystal display device

Info

Publication number
JPH03167529A
JPH03167529A JP1307909A JP30790989A JPH03167529A JP H03167529 A JPH03167529 A JP H03167529A JP 1307909 A JP1307909 A JP 1307909A JP 30790989 A JP30790989 A JP 30790989A JP H03167529 A JPH03167529 A JP H03167529A
Authority
JP
Japan
Prior art keywords
liquid crystal
bus line
gate bus
display device
active matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1307909A
Other languages
Japanese (ja)
Other versions
JPH07119917B2 (en
Inventor
Yoshiro Koike
善郎 小池
Kenichi Oki
沖 賢一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP30790989A priority Critical patent/JPH07119917B2/en
Publication of JPH03167529A publication Critical patent/JPH03167529A/en
Publication of JPH07119917B2 publication Critical patent/JPH07119917B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To collect an impure ion in a moment when a panel is driven and to realize display which is uniform and high quality by making at least a part of the surface of a gate bus line abut on a liquid crystal through an oriented film. CONSTITUTION:A thin film transistor for driving a picture element and the gate bus line GB which impresses a selecting signal on the thin film transistor are provided on one of a pair of insulating substrates interposing the liquid crystal and a part of the surface of the gate bus line GB is made to abut on the liquid crystal through only the oriented film. Since the oriented film is thin, the potential of the gate bus line GB acts on the liquid crystal at the part of the oriented film and attracts a positive ion in the liquid crystal by the negative potential. Thus, the positive ion exists extremely few in the liquid crystal at the other part and the excellent display is obtained.

Description

【発明の詳細な説明】 〔概 要〕 アクティブマトリクス型液晶表示装置に関し、パネル内
で液晶抵抗の低下が発生しても、その抵抗低下の原因と
なる不純物イオンを回収する機能を設けることを目的と
し、 液晶を挟持する一対の絶縁性基板の、一方の絶縁性基板
上に画素駆動用の薄膜トランジスタと、該薄膜トランジ
スタに選択信号を印加するゲートバスラインとを具備し
、且つ該ゲートバスライン表面の少なくとも一部が、配
向膜を介して前記液晶と接するようにした構成とする。
[Detailed Description of the Invention] [Summary] An object of the present invention is to provide a function for collecting impurity ions that cause a decrease in resistance even if a decrease in liquid crystal resistance occurs within the panel in an active matrix type liquid crystal display device. A thin film transistor for pixel driving is provided on one of the insulating substrates of a pair of insulating substrates sandwiching the liquid crystal, and a gate bus line for applying a selection signal to the thin film transistor, and a surface of the gate bus line is provided. At least a portion of the liquid crystal is in contact with the liquid crystal via an alignment film.

〔産業上の利用分野〕[Industrial application field]

本発明は、アクティブマトリクス型液晶表示装置に関し
、特に液晶抵抗の低下防止、更に高抵抗化のためのTP
T基板構造に関する。
The present invention relates to an active matrix type liquid crystal display device, and in particular to a TP for preventing a drop in liquid crystal resistance and further increasing the resistance.
Regarding T-substrate structure.

アクティブマトリクス型液晶表示装置においては、TP
Tのオフ特性とともに、液晶抵抗が表示品質上きわめて
重要となる。
In active matrix liquid crystal display devices, TP
Along with the off-characteristics of T, the liquid crystal resistance is extremely important in terms of display quality.

TPTのオフ特性は、そのオフ電流が少なければ少ない
ほど良く、また、液晶抵抗は高ければ高いほど高コント
ラスト表示が得られる。このような観点から、TPT素
子特性におけるオフ電流低減の研究が進められ、液晶抵
抗に関しては製造工程での液晶汚染防止技術、並びに、
液晶高抵抗化の研究がなされている。
The smaller the off-state current is, the better the TPT's off-state characteristics are, and the higher the liquid crystal resistance, the higher the contrast display can be obtained. From this perspective, research on reducing off-state current in TPT element characteristics is progressing, and regarding liquid crystal resistors, technology to prevent liquid crystal contamination during the manufacturing process, and
Research is being conducted on increasing the resistance of liquid crystals.

また、上記液晶抵抗に関しては、表示領域内で均一に液
晶抵抗を高抵抗化し、更に、高信頼性を保つには、この
高抵抗状態を長期にわたって維持しなければならないと
いう要求がある。
Furthermore, regarding the liquid crystal resistor, there is a requirement that this high resistance state must be maintained for a long period of time in order to uniformly increase the resistance of the liquid crystal resistor within the display area and maintain high reliability.

〔従来の技術〕[Conventional technology]

従来のアクティブマトリクス型液晶表示装置においては
、液晶抵抗を高めるために、 ■ 注入する液晶として、抵抗値の高いものを用いる。
In conventional active matrix liquid crystal display devices, in order to increase the liquid crystal resistance, (1) a liquid crystal with a high resistance value is used as the injected liquid crystal;

■ 配向材料として、電圧保持特性の優れたものを用い
る。
■ Use a material with excellent voltage holding properties as the alignment material.

という二つの要件があり、この二つが同時に満たされた
場合に、始めて高抵抗特性を有する液晶表示パネルが得
られる。
There are two requirements, and only when these two requirements are met simultaneously can a liquid crystal display panel having high resistance characteristics be obtained.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、上記液晶の高抵抗化を妨げる要因として
、パネル化の際に、パネル内に混入した異物(特に人体
ゴミ)による局所的な液晶抵抗の低下部が発生したり、
また、長期のランニング、または保存により、基板の下
地汚染が少しずつ液晶層に溶け出し、液晶抵抗を低下さ
せるという問題が存在した。
However, factors that prevent the above-mentioned liquid crystal from becoming high in resistance include the occurrence of localized areas where the liquid crystal resistance decreases due to foreign matter (particularly human body dust) mixed into the panel during panel fabrication;
Furthermore, there is a problem in that, due to long-term running or storage, the underlying contamination of the substrate gradually dissolves into the liquid crystal layer, reducing the liquid crystal resistance.

本発明は、パネル内で液晶抵抗の低下が発生しても、そ
の抵抗低下の原因となる不純物イオンを回収する機能を
設けることを目的とする。
An object of the present invention is to provide a function to recover impurity ions that cause a decrease in liquid crystal resistance even if a decrease in liquid crystal resistance occurs within the panel.

〔課題を解決するための手段〕[Means to solve the problem]

本発明は、画素駆動用の薄膜トランジスタに選択信号を
印加するゲートバスライン表面の少なくとも一部が、配
向膜を介して液晶と接するようにした。
In the present invention, at least a part of the surface of the gate bus line that applies a selection signal to the pixel driving thin film transistor is in contact with the liquid crystal via an alignment film.

このような構造は、ゲートバスライン上に通常形成され
ている絶縁膜の一部を、ゲートバスライン上で除去して
、底部でゲートバスラインの表面を露出する開口を形威
した上で、配向膜を形或することにより、容易に作製で
きる。
In such a structure, a part of the insulating film normally formed on the gate bus line is removed on the gate bus line to form an opening that exposes the surface of the gate bus line at the bottom. It can be easily manufactured by shaping the alignment film.

〔作 用〕[For production]

アクティブマトリクス型液晶表示装置において、液晶抵
抗低下の原因となる不純物イオンの主なものは、金属陽
イオン(Na”等)であることが知られている。
In active matrix liquid crystal display devices, it is known that the main impurity ions that cause a decrease in liquid crystal resistance are metal cations (such as Na'').

本発明は、この金属陽イオンを電気的に回収し得る構成
を実現したものである。
The present invention realizes a configuration in which these metal cations can be recovered electrically.

アクティブマトリクス型液晶表示装置は、表示画素ごと
に薄膜トランジスタ素子を具備し、TPTのオン,オフ
により、表示画素の書込み保持を行なう。
An active matrix liquid crystal display device includes a thin film transistor element for each display pixel, and writes and holds data in the display pixel by turning on and off TPT.

ここで、TPTをオンにするためには、ゲートに正の電
圧を印加し、オフ(電圧保持状態)とするためには、ゲ
ートに負の電圧を印加する。この繰り返しにより、種々
な画像表示を行なう。
Here, to turn on the TPT, a positive voltage is applied to the gate, and to turn it off (voltage holding state), a negative voltage is applied to the gate. By repeating this process, various images are displayed.

一つのゲートバスラインに印加される電圧の時間変化は
、選択された時にのみ、そのゲートバスラインに正の電
圧が印加され、他のラインを選択している時には、当該
バスラインには負の電圧が印加されている。即ち、殆ど
の時間、ゲートパスラインには、負の電圧が印加されて
いる。
The time change in the voltage applied to one gate bus line is such that a positive voltage is applied to the gate bus line only when it is selected, and a negative voltage is applied to the bus line when another line is selected. Voltage is applied. That is, a negative voltage is applied to the gate pass line most of the time.

本発明では、ゲートバスライン表面の一部が、配向膜の
みを介して液晶に接している。配向膜は薄いので、この
部分では、上記ゲートバスラインの電位が液晶に作用を
及ぼし、上記負電位により液晶中の陽イオンを吸着する
ので、他の部分では液晶中に陽イオンが極めて少なくな
り、良好な表示が得られる。
In the present invention, a portion of the gate bus line surface is in contact with the liquid crystal only through the alignment film. Since the alignment film is thin, the potential of the gate bus line acts on the liquid crystal in this part, and the negative potential adsorbs the cations in the liquid crystal, so in other parts there are very few cations in the liquid crystal. , a good display can be obtained.

本発明では、このようにアクティブマトリクス型液晶表
示装置を駆動することによって、液晶抵抗を高める機能
があるため、液晶抵抗の低下が関与するあらゆる表示不
良を解消することが可能であり、信頼性が高く、高表示
品質の液晶表示装置が得られる。
Since the present invention has a function of increasing the liquid crystal resistance by driving the active matrix type liquid crystal display device in this way, it is possible to eliminate any display defects related to a decrease in liquid crystal resistance, and the reliability can be improved. A liquid crystal display device with high display quality can be obtained.

〔実 施 例〕〔Example〕

以下本発明の一実施例の構或を第1図に、従来の薄膜ト
ランジスタマトリクスの構或を比較のために第4図に示
す。
The structure of an embodiment of the present invention is shown in FIG. 1, and the structure of a conventional thin film transistor matrix is shown in FIG. 4 for comparison.

従来は第4図に示すように、ゲートバスラインGB上に
、通常ゲート絶縁膜が形成され、ゲート?スラインCB
を覆っている。そのため、前述したように駆動時には殆
どの時間、ゲートバスラインGBが負の電位に保たれて
いるにもかかわらず、その電位が液晶に作用を及ぼすこ
とはなく、不純物イオンを集める働きはない。
Conventionally, as shown in FIG. 4, a gate insulating film is usually formed on the gate bus line GB, and the gate? Sline CB
is covered. Therefore, as described above, even though the gate bus line GB is kept at a negative potential most of the time during driving, that potential does not affect the liquid crystal and does not collect impurity ions.

これに対し、本実施例では第1図に示す如く、ゲートバ
スラインGB上に形或されたゲー1縁膜の一部を、選択
的にエッチング除去して、ゲート絶縁膜に開口部1を設
け、その底部でゲートバスラインGBの一部を露出させ
る。
In contrast, in this embodiment, as shown in FIG. 1, a part of the gate 1 edge film formed on the gate bus line GB is selectively etched away to form an opening 1 in the gate insulating film. A part of the gate bus line GB is exposed at the bottom thereof.

本実施例においては、ゲート絶縁膜として、厚さ約30
00人のSiN.膜を形威した。次いで、化学気相エソ
チング( Chemical Dry Etching
 )法を施して、図にハッチを付して示す部分を選択的
に除去し、この部分でゲートバスラインGBの表面を露
出させた。
In this example, the gate insulating film has a thickness of approximately 30 mm.
00 SiN. The membrane was shaped. Next, chemical vapor phase etching (Chemical Dry Etching)
) method to selectively remove the hatched portion in the figure, exposing the surface of the gate bus line GB at this portion.

エソチング条件は、CF4と0■が2:1の割合の混合
ガス雰囲気中で、圧力0.3Torr,RFバワー50
0Wとした。
The ethoching conditions were a mixed gas atmosphere with a ratio of 2:1 of CF4 and 0■, a pressure of 0.3 Torr, and an RF power of 50
It was set to 0W.

なお、図において、Eは画素電極、Gはゲート電極、S
はソース電極、Dはドレイン電極、DBはドレインバス
ラインを示す。
In the figure, E is a pixel electrode, G is a gate electrode, and S is a pixel electrode.
indicates a source electrode, D indicates a drain electrode, and DB indicates a drain bus line.

このようにして作製したTPT基板と、従来のTPT基
板(SiNXがゲートバスラインを全て覆う)とを用い
て液晶表示装置を作製し、両者の表示状態を比較した。
A liquid crystal display device was manufactured using the thus manufactured TPT substrate and a conventional TPT substrate (SiNX covers all gate bus lines), and the display states of the two were compared.

その表示状態を第2図(a),(blに示す。The display state is shown in FIGS. 2(a) and (bl).

従来パネルにおいては、混入異物による液晶汚染が起こ
り、(a)に参照符号10を付して示す如く、部分的に
コントラストの低い部分が観察される(クロスニコル方
式では白くなる)。
In the conventional panel, contamination of the liquid crystal occurs due to foreign matter, and as shown in FIG. 3A with the reference numeral 10, a portion with low contrast is observed (white in the crossed Nicols method).

これに対し本実施例では、(blに示すごとく、一様な
高コントラスト表示が得られた。また、長期のランニン
グおよび保存試験においても、何ら異常は発生しなかっ
た。更に、液晶中の不純物は、パネル駆動後殆ど瞬間的
に回収され、問題のないレベルとなることがわかった。
In contrast, in this example, a uniform high-contrast display was obtained as shown in (bl). Also, no abnormality occurred during long-term running and storage tests. Furthermore, impurities in the liquid crystal was recovered almost instantaneously after the panel was driven, and was found to be at a non-problematic level.

次に本発明の効果をより明確にするため、パネルに注入
する液晶として、約1010Ωcmの抵抗率を有するも
のを用い、従来構造及び本発明の構造の液晶表示装置を
作製し、両者の表示の様子を比較した。その結果を第3
図(a), (b)に示す。
Next, in order to clarify the effects of the present invention, liquid crystal display devices having a conventional structure and a structure according to the present invention were manufactured using a liquid crystal having a resistivity of about 1010 Ωcm to be injected into the panel, and the display of both was We compared the situation. The result is the third
Shown in Figures (a) and (b).

従来構造の表示装置においては、液晶中の不純物が、注
入口付近に吸着され、同図(a)に示すように、縞状の
表示のむら1lが発生した。
In the display device with the conventional structure, impurities in the liquid crystal were adsorbed near the injection port, resulting in striped display irregularities 1l, as shown in FIG.

一方、本発明構造の表示装置では、従来例と同様、注入
口近くに不純物イオンが吸着され、液晶抵抗が低下した
にもかかわらず、(b)に示す如く、その不均一性は表
示状態では観察されない。
On the other hand, in the display device with the structure of the present invention, as in the conventional example, impurity ions are adsorbed near the injection port, and although the liquid crystal resistance is reduced, the non-uniformity remains in the display state as shown in (b). Not observed.

これは、本発明構造においては、駆動を開始した瞬間に
、不純物イオンが速やかにゲートバスラインGBのむき
出し領域に吸着回収され、表示画素部の液晶抵抗が均一
高抵抗化するためと解される。
This is understood to be because in the structure of the present invention, impurity ions are quickly adsorbed and collected in the exposed area of the gate bus line GB at the moment driving is started, and the liquid crystal resistance of the display pixel portion becomes uniformly high. .

(発明の効果) 以上説明した如く本発明によれば、液晶抵抗の低下に起
因するすべての表示不良や表示ムラに対し、パネル駆動
時に瞬間的に不純物イオンを回収し、均一且つ高品質の
表示が可能となる。
(Effects of the Invention) As explained above, according to the present invention, impurity ions are instantly collected during panel drive to eliminate all display defects and display unevenness caused by a decrease in liquid crystal resistance, thereby providing a uniform and high-quality display. becomes possible.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明一実施例の構成説明図、第2図および第
3図は、上記一実施例の効果説明図、 第4図は従来装置の構成説明図である。 図において、GBはゲートバスライン、■はゲート絶縁
膜に設けた開口部を示す。 (Q) (b)
FIG. 1 is an explanatory diagram of the configuration of an embodiment of the present invention, FIGS. 2 and 3 are explanatory diagrams of the effects of the above-mentioned embodiment, and FIG. 4 is an explanatory diagram of the configuration of a conventional device. In the figure, GB indicates a gate bus line, and ■ indicates an opening provided in the gate insulating film. (Q) (b)

Claims (1)

【特許請求の範囲】[Claims] 液晶を挟持する一対の絶縁性基板の、一方の絶縁性基板
上に画素駆動用の薄膜トランジスタと、該薄膜トランジ
スタに選択信号を印加するゲートバスライン(GB)と
を具備し、且つ該ゲートバスライン表面の少なくとも一
部が、配向膜を介して前記液晶と接するようにしたこと
を特徴とするアクティブマトリクス型液晶表示装置。
A thin film transistor for driving a pixel and a gate bus line (GB) for applying a selection signal to the thin film transistor are provided on one of a pair of insulating substrates sandwiching a liquid crystal, and a surface of the gate bus line is provided. An active matrix type liquid crystal display device, wherein at least a part of the liquid crystal is in contact with the liquid crystal via an alignment film.
JP30790989A 1989-11-27 1989-11-27 Active matrix liquid crystal display device Expired - Lifetime JPH07119917B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30790989A JPH07119917B2 (en) 1989-11-27 1989-11-27 Active matrix liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30790989A JPH07119917B2 (en) 1989-11-27 1989-11-27 Active matrix liquid crystal display device

Publications (2)

Publication Number Publication Date
JPH03167529A true JPH03167529A (en) 1991-07-19
JPH07119917B2 JPH07119917B2 (en) 1995-12-20

Family

ID=17974632

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30790989A Expired - Lifetime JPH07119917B2 (en) 1989-11-27 1989-11-27 Active matrix liquid crystal display device

Country Status (1)

Country Link
JP (1) JPH07119917B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996030801A1 (en) * 1995-03-29 1996-10-03 Hitachi, Ltd. Liquid crystal display

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62148927A (en) * 1985-12-24 1987-07-02 Toshiba Corp Production of active matrix type liquid crystal display device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62148927A (en) * 1985-12-24 1987-07-02 Toshiba Corp Production of active matrix type liquid crystal display device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996030801A1 (en) * 1995-03-29 1996-10-03 Hitachi, Ltd. Liquid crystal display

Also Published As

Publication number Publication date
JPH07119917B2 (en) 1995-12-20

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