JPS62169125A - Preparation of liquid crystal display panel - Google Patents

Abstract

PURPOSE:To prevent disconnection of wiring of a liquid crystal display panel and to reduce preparation cost of the liquid crystal display panel by etching thin film of a high resistance semiconductor, then etching thin film of a low resistance semiconductor. CONSTITUTION:Thin film 2 of a transparent conductor and thin film 3 of a low resistance semiconductor are formed on a transparent insulating substrate 1, then the low resistance semiconductor thin film 3 and the transparent conductor 2 are etched in the order. The low resistance semiconductor thin film 3 is etched further. Thereafter, the thin film 4 of high resistance semiconductor, thin film 5 of insulating body, and thin film 6 of the conductor are formed in the order, then the conductor thin film 6, insulator thin film 5, and the high resistance semiconductor thin film 4 are etched. Further, the low resistance semiconductor thin film 3 is etched. By this method, photoetching stage which has been required conventionally to be repeated 4 times, is saved to two times, shortening thus the preparation stage.

Description

[Detailed Description of the Invention] [Industrial Field of Application] The present invention relates to a method for manufacturing an active matrix substrate for a liquid crystal display panel. [Summary of the Invention] The present invention relates to a method for manufacturing an active matrix substrate for a liquid crystal display panel. In the method, a) a transparent conductor thin film, a low-resistance semiconductor thin film, a high-resistance semiconductor thin film, an insulator thin film, and a conductor thin film are each formed in the same pattern, and an active matrix J[ b) etching the low-resistance semiconductor thin film after etching the transparent conductor thin film; C) etching the low-resistance semiconductor thin film after etching the high-resistance semiconductor thin film; The active matrix substrate is formed twice, b) prevents wire breakage and reduces the cost of the liquid crystal display panel, and c) improves display characteristics by removing unnecessary low-resistance semiconductors without increasing the number of photo-etching steps. 〇 [Prior art] A conventional liquid crystal display panel equipped with a non-active matrix substrate is as shown in 83D GEST, PM56 from S, and as explained according to Fig. 2, 81 semiconductor thin film is formed on a transparent insulating substrate 1. After forming and photo-etching into a predetermined shape, a gate insulating film is formed, a poly S1 film is formed, and a gate 111i25 is formed by photo-etching. A source 24 and a drain 23 are formed by 0 ion implantation. An interlayer insulating film is formed, a contact hole is opened by photo-etching, a transparent conductive film is formed, and a pixel electrode 21 and data@22 are formed by photo-etching to form a transparent matrix substrate and a normal liquid crystal panel. A liquid crystal display panel is produced by aligning the liquid crystal according to the process described above, forming a cell having a predetermined gap with the counter substrate subjected to the alignment process, and filling the cell with liquid crystal. [Problems to be Solved by the Invention] ] However, with the above-mentioned conventional technology, the manufacturing process of the active matrix substrate is long and complicated, and has the following problems: (a) the cost of the liquid crystal display panel is extremely high, (h) the yield is low, and (C) it is difficult to produce a large screen. ◇ The present invention is intended to solve these problems, and its purpose is to provide a method of manufacturing a liquid crystal display panel that allows a large-screen liquid crystal display panel to be produced at low cost.

[Means for solving problems]

The method for manufacturing a liquid crystal display panel of the present invention includes: a) connecting a data line, a pixel electrode, and a source and drain electrode of a transistor;
The channel part (semiconductor layer) of the transistor, the gate insulating film, the gate electrode, and the timing line are formed in one photoetching process.
b) The low-resistance semiconductors forming the source and drain, the transparent electrodes forming the data lines and pixel electrodes are sequentially etched, and then the low-resistance semiconductor is etched again. c) After sequentially etching the conductor thin film constituting the gate electrode and timing line, the gate insulating film, and the high resistance semiconductor thin film constituting the channel part, the low resistance semiconductor thin film exposed on the unnecessary pixel electrode was removed. It is characterized by

[For production]

According to the above-described manufacturing method of the present invention, a) an active matrix substrate can be manufactured in two photoetching steps, which is half the conventional four times, and b) a low-resistance semiconductor thin film and a transparent conductor thin film can be manufactured. When the transparent conductor thin film 32 is etched in this order, the side etching progresses more than the low resistance semiconductor thin film 33 as shown in FIG. However, by further etching the low-resistance semiconductor thin film, and by further performing side etching on the transparent conductor thin film pattern as shown in FIG. ) Although an active matrix substrate can be formed by photo-etching twice, a low-resistance semiconductor thin film remains on the pixel electrode. Due to this light absorption by the semiconductor thin film, the transmittance of the liquid crystal display panel decreases and coloring occurs.

Therefore, the above-mentioned problem can be solved without increasing the number of steps by removing the low-resistance semiconductor thin film on the pixel electrode after etching the high-resistance semiconductor thin film.

〔Example〕

FIG. 1 shows a main cross-sectional view of an active matrix substrate of a liquid crystal display panel in an embodiment of the present invention. A transparent conductor thin film 2 is formed on a transparent insulating substrate 1. The transparent conductor thin film is made of tin oxide, indium oxide, or a mixture thereof, and can be formed by vapor phase growth or sputter deposition, and the film thickness ranges from 20 nm to 400 nm.
A film thickness of m is appropriate. A low-resistance semiconductor thin film 3 is formed on this transparent conductor thin film 2 by a general method (eg, vapor phase growth method). Low-resistance semiconductors include amorphous silicon and polysilicon doped with impurities such as phosphorus and poron, and the film thickness ranges from several nm to 100 nm.
is suitable 0 7 photoresist pattern 4 on this substrate
First, the low resistance semiconductor thin film 3 is selectively etched according to the resist pattern 4, and the low resistance semiconductor thin film 3 is removed and the exposed transparent conductor thin film 2 is etched. At this time, as shown in FIG.
is side-etched, so the low-resistance semiconductor thin film 3 is side-etched again so that it is inside the transparent conductor thin film 2, as shown in Figure 4.@After removing the resist film, the high-resistance semiconductor thin film is etched. A gate insulating film 5 is formed to a thickness of 10 mm to 300 nm using a vapor phase epitaxy method or a sputter deposition method. Silicon oxide or silicon oxide is generally used as the gate insulating film 5. This insulating film is used not only as a gate insulating film but also as an interlayer insulating film.@Furthermore, a conductive thin film 6 is formed by sputter deposition or vapor deposition. As the zero conductor thin film, metals such as aluminum and τα, low resistance semiconductors, and conductive metal oxides such as indium oxide can be used. By patterning the transparent conductive thin film 2 and the low resistance semiconductor thin film 3, the data I!
By patterning the zero-order high resistance semiconductor film FII4, the insulating thin film 5, and the conductive thin film 6 that form the source 24 and the drain 25, the channel part 25, the gate electrode 22 and the pixel electrode 21, (Since the channel part and the gate electrode overlap, they are both indicated by the subscript 25),
Forming the timing line 26 ・Form the organic film such as polyimide resin, which performs the liquid crystal alignment treatment normally performed, on the surface of the transparent insulating substrate on which the transparent matrix has been formed by the above steps. By doing this, alignment treatment of the liquid crystal is performed. Further, the facing substrates are similarly aligned, and a predetermined gap is maintained between the two substrates, and the periphery is sealed.Liquid crystal is injected into this gap and sealed to form a liquid crystal panel.

〔Effect of the invention〕

As described above, according to the present invention, the complicated and long active matrix substrate manufacturing process that conventionally required four photo-etching processes can be reduced to two photo-etching processes, thereby simplifying the manufacturing process. 6o Also, the semiconductor thin film on the pixel electrode can be removed. By doing so, it is possible to provide a bright display without coloring on the liquid crystal display panel.

[Brief explanation of drawings]

Figure 1 shows the active material of the liquid crystal display panel of the present invention.
Main cross-sectional view of the J-custom board. Figure 2 is a main sectional view of an active matrix substrate of a conventional liquid crystal display panel. ◇ Figure 3 is a sectional view showing side etching of a transparent conductive film pattern. FIG. 4 is a sectional view showing side etching of a semiconductor pattern. 5 and 6 are main plan views showing examples of the active matrix substrate of the liquid crystal display panel of the present invention 02...Transparent conductive film 3...Low resistance semiconductor film 4...High resistance semiconductor film 5. ...Insulating film 6...Conductor film 2
1... Pixel electrode 22... Data! I 2
3...Drain 24...Source 25.
...Gate 26...Above the timing line

Claims (1)

[Claims] A method for manufacturing a liquid crystal display panel in which transistors are arranged in a matrix includes the steps of: a) forming a transparent conductor thin film and a low-resistance semiconductor thin film on a transparent insulating substrate; and b) forming a water resist pattern into a predetermined shape. forming and etching the low resistance semiconductor thin film and the transparent conductor thin film in this order,
further etching the low resistance semiconductor thin film;
c) forming thin films in the order of a high-resistance semiconductor thin film, an insulator thin film, and a conductor thin film, and d) forming a photoresist pattern into a predetermined shape, and etching the conductor thin film, the insulator thin film, and the high-resistance semiconductor thin film. A method for manufacturing a liquid crystal display panel, further comprising the step of etching the low resistance semiconductor thin film.