JPS62148927A - Production of active matrix type liquid crystal display device - Google Patents
Production of active matrix type liquid crystal display deviceInfo
- Publication number
- JPS62148927A JPS62148927A JP60289197A JP28919785A JPS62148927A JP S62148927 A JPS62148927 A JP S62148927A JP 60289197 A JP60289197 A JP 60289197A JP 28919785 A JP28919785 A JP 28919785A JP S62148927 A JPS62148927 A JP S62148927A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- insulating film
- film
- display device
- crystal display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13392—Gaskets; Spacers; Sealing of cells spacers dispersed on the cell substrate, e.g. spherical particles, microfibres
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は第1基板にマトリックス状に配列形成された複
数の表示画素電極それぞれに、この表示画素電極を選択
駆動させる薄膜トランジスタが設けられてなるアクティ
ブマトリックス型液晶装置の製造方法に係り、特に第1
基板に形成された画素電極と第2基板に形成された対向
電極との間隔(以下ギャップと云う)を均一に保ち、良
好な表示品位を得られるようにするアクティブマトリッ
クス型液晶表示装置の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an active display device in which a plurality of display pixel electrodes arranged in a matrix on a first substrate are each provided with a thin film transistor for selectively driving the display pixel electrodes. It relates to a method for manufacturing a matrix type liquid crystal device, especially the first method.
A method for manufacturing an active matrix liquid crystal display device that maintains a uniform interval (hereinafter referred to as the gap) between a pixel electrode formed on a substrate and a counter electrode formed on a second substrate to obtain good display quality. It is related to.
最近の液晶表示装置として、テレビ表示やグラフィック
スディスプレイ等を指向した大容量、高密度のアクティ
ブマトリックス型液晶表示装置の開発、実用化が盛んで
ある。このような液晶表示装置では、クロストークのな
い高コントラス1−の表示が行えるように各画素の駆動
、制御を行う手段として半導体スイッチが用いられてい
る。この半導体スイッチとしては単結晶Si基板上に形
成されたMOSFETや最近では透過型表示が可能であ
り、また大面積化も容易であるなどの理由がら透明絶縁
基板上に形成された薄膜トランジスタ(TPT)などが
用いられている。As recent liquid crystal display devices, active matrix type liquid crystal display devices with large capacity and high density are being actively developed and put into practical use for use in television displays, graphics displays, and the like. In such a liquid crystal display device, a semiconductor switch is used as a means for driving and controlling each pixel so that a high contrast 1- display without crosstalk can be performed. These semiconductor switches include MOSFETs formed on single-crystal Si substrates and, recently, thin film transistors (TPTs) formed on transparent insulating substrates because they are capable of transmissive display and are easy to increase in area. etc. are used.
次に、第2図によりアクティブマトリックス型液晶表示
装置の一例を説明する。Next, an example of an active matrix liquid crystal display device will be explained with reference to FIG.
即ち、ガラスまたはプラスチックからなる第1基板(1
)にはITO膜などの透明導電膜からなる画素電極(2
)と、この画素電極(2)と一体のドレイン電極(3)
及びソース電極(4)と、このドレイン電極(3)とソ
ース電極(4)とに一部が重なるように設けられた半導
体膜(5)と、この半導体層(5)に5i02などから
なる絶縁膜(6)を介して設けられたゲート電極(7)
と、これらの上面に被着形成された配向膜を兼ねる絶縁
膜(10)とから構成されている。一方、第2基板(1
2)にはITO膜などの透明導電膜からなる対向電極(
13)が形成されている。That is, the first substrate (1
) is a pixel electrode (2) made of a transparent conductive film such as an ITO film.
), and a drain electrode (3) integrated with this pixel electrode (2)
and a source electrode (4), a semiconductor film (5) provided so as to partially overlap the drain electrode (3) and the source electrode (4), and an insulating film made of 5i02 or the like on the semiconductor layer (5). Gate electrode (7) provided through the membrane (6)
and an insulating film (10) which also serves as an alignment film and is formed on the upper surface of these. On the other hand, the second substrate (1
2) has a counter electrode (made of a transparent conductive film such as an ITO film).
13) is formed.
然るに、このようなアクティブマトリックス型液晶表示
装置においては、第1基板(1)上の凹凸は配向膜を兼
ねる絶縁膜(10)を入れると約4μm(4000人)
程度にもなり、画素電極(2)と対向電極(13)との
ギャップを12μm程度に均一におさえるためにスペー
サ材(11)を入れると、画素電極(2)では良いが1
〜ランジスタと、または図示しない列・行選択線の立体
交差部上などにスペーサ材(]−1+)が乗ると、ギャ
ップはこのスペーサ材(11,1)できまることになる
。そのため、スペーサ材(11,1)は変形し、更に、
1〜ランジスタや列・行選択線の立体交差部などを押圧
することになり、回路的な絶縁破壊の原因となるし、ま
た、画素電極(2)と共通電極(13)間のギャップを
均一に出来ないため、表示品位や製造歩留を悪くする原
因となっている。However, in such an active matrix type liquid crystal display device, the unevenness on the first substrate (1) is approximately 4 μm (4000 people) when an insulating film (10) that also serves as an alignment film is included.
If a spacer material (11) is inserted to uniformly suppress the gap between the pixel electrode (2) and the counter electrode (13) to about 12 μm, the pixel electrode (2) is fine, but
~ If a spacer material (]-1+) is placed on the transistor or on the overpass of a column/row selection line (not shown), the gap will be defined by this spacer material (11, 1). Therefore, the spacer material (11, 1) is deformed, and furthermore,
1~ Pressing the transistors and the three-dimensional intersections of column/row selection lines will cause dielectric breakdown in the circuit, and the gap between the pixel electrode (2) and the common electrode (13) should be made uniform. This is a cause of deterioration in display quality and manufacturing yield.
これは、トランジスタの上に光による漏れ電流を防ぐた
めの遮光用の金属膜を設ける場合も同様である。This also applies to the case where a light-shielding metal film is provided on the transistor to prevent leakage current due to light.
本発明は」二連した問題点に鑑みてなされたものであり
、スペーサ材を画素電極の上にのみ散布することが可能
なアクティツマ1−リツクス型液晶表示装置の製造方法
を提供することを目的としている。The present invention has been made in view of two problems, and an object of the present invention is to provide a method for manufacturing an active matrix type liquid crystal display device in which a spacer material can be sprayed only on pixel electrodes. It is said that
本発明は、複数の薄膜トランジスタにより選択駆動され
る複数の画素電極がマトリックス状に配列形成されてな
る第1基板と対向電極が形成された第2基板との間に液
晶層が挟持されると共にスペーサ材により所定の間隔に
保たれてなるアクティブマトリックス型液晶表示装置の
製造方法において、スペーサ材を電気的に同一極性とし
、前記画素電極をこれと反対の極性に帯電させることに
より、スペーサ材を画素電極の上にのみ散布させること
を特徴とするアクティブマトリックス型液晶表示装置の
製造方法である。In the present invention, a liquid crystal layer is sandwiched between a first substrate on which a plurality of pixel electrodes selectively driven by a plurality of thin film transistors are arranged in a matrix, and a second substrate on which a counter electrode is formed, and a spacer is provided. In a method for manufacturing an active matrix liquid crystal display device in which the spacer materials are kept at a predetermined interval by a material, the spacer materials are made to have the same electrical polarity and the pixel electrodes are charged to the opposite polarity. This is a method for manufacturing an active matrix liquid crystal display device, characterized in that the spray is applied only on the electrodes.
次に本発明のアクティブマトリックス型液晶表示装置の
製造方法の一実施例を第1図により説明する。但し、対
向電極を有する第2の基板及び液晶層は省略する。Next, an embodiment of the method for manufacturing an active matrix liquid crystal display device of the present invention will be described with reference to FIG. However, the second substrate having a counter electrode and the liquid crystal layer are omitted.
即ち、ガラスまたはプラスチックからなる基板(21)
上にはITOなどの透明導電膜からなる画素電極(22
)と、この画素電極(22)と一体のドレイン電極(2
3)及びソース電極(24)と、このドレイン電極(2
3)とソース電極(24)とに一部が重なるように設け
られた半導体膜(25)と、この半導体層(25)に5
i02などからなる絶縁膜(26)を介して設けられた
ゲート電極(27)と、ソース電極(24)と一体形成
された列選択線(28)と、ゲート電極(27)と一体
形成された行選択線(29)と、これらの上面に被着形
成された配向膜を兼ねる絶縁膜(30)が形成されてい
る。 上述した構成からなる複数の薄膜トランジスタに
より選択駆動される複数の画素電極がマトリックス状に
配列形成されてがる基板(21)上の画素電極(22)
上にのみスペーサ材(31)を散布させるためには、先
ず、配向膜を兼ねる絶縁膜(30)を布でラビングして
配向性をもたせると共に負−に帯電させておく。That is, a substrate (21) made of glass or plastic
On top is a pixel electrode (22) made of a transparent conductive film such as ITO.
), and a drain electrode (2) integrated with this pixel electrode (22).
3) and the source electrode (24), and this drain electrode (2
3) and a semiconductor film (25) provided so as to partially overlap with the source electrode (24);
A gate electrode (27) provided through an insulating film (26) made of i02 or the like, a column selection line (28) formed integrally with the source electrode (24), and a column selection line (28) formed integrally with the gate electrode (27). A row selection line (29) and an insulating film (30) which also serves as an alignment film are formed on top of these lines. A pixel electrode (22) on a substrate (21) on which a plurality of pixel electrodes selectively driven by a plurality of thin film transistors configured as described above are arranged in a matrix.
In order to spread the spacer material (31) only on the top, first, the insulating film (30), which also serves as an alignment film, is rubbed with a cloth to give it orientation and to be negatively charged.
次に、列選択線(28)と行選択線(29)に画素電極
(22)上の配向膜を兼ねる絶縁膜(30+ )の負−
の帯電が打消されない程度の圧子電位を印加する。これ
は列選択線(28)と行選択線(29)を連結して印加
すればよい。この様にして列選択線(28)、行選択線
(29)、薄膜1−ランジスタ上の配向膜を兼ねる絶縁
膜(30□)は圧子に帯電される。Next, a negative −
Apply an indenter potential to the extent that the electrification of the indenter is not canceled. This can be applied by connecting the column selection line (28) and row selection line (29). In this way, the column selection line (28), the row selection line (29), and the insulating film (30□) which also serves as an alignment film on the thin film 1-transistor are charged to the indenter.
次に、ガラス、プラスチックなどの均一・径を有する丸
棒、球などのスペーサ材(:H)を止子電価に帯電した
ちの髪種々な散布方法で散布すると、列選択線(28)
、行選択線(29)及び薄膜トランジスターLの配向膜
を兼ねる絶縁膜(302)上には散布されず、画素電極
(22)上の配向膜を兼ねる絶縁膜(30+)上にのみ
散布されることになる。Next, when a spacer material (:H) such as a round rod or ball made of glass or plastic with a uniform diameter is sprinkled on the hair charged with a stopper electric value using various scattering methods, the column selection line (28) is applied.
, is not scattered on the row selection line (29) and the insulating film (302) that also serves as the alignment film of the thin film transistor L, but is sprayed only on the insulating film (30+) that also serves as the alignment film on the pixel electrode (22). It turns out.
このような製造方法は列選択線(28)、行選択線(2
9)を連結しておしづばよく、これはトランジスタの静
電破壊防止」−の必要条件であり、またラビングにより
画素電極(22)、、hの配向膜を兼ねる絶縁膜(30
+)は必然的に帯電するため、スペーサ材(31)を配
向膜を兼ねる絶縁膜(:XO>をラビングした時の帯電
と逆特性に帯電させるだけで上述のような選択散布が可
能である。This manufacturing method includes a column selection line (28) and a row selection line (28).
9), which is a necessary condition for preventing electrostatic damage to the transistor.Also, by rubbing, the insulating film (30
+) is inevitably charged, so selective dispersion as described above is possible by simply charging the spacer material (31) with an opposite charge to that when rubbing the insulating film (:XO>) that also serves as an alignment film. .
一1〕述のように本発明のアクティブマトリックス型液
晶表示装置の製造方法によれば次の効果がある。11] As described above, the method for manufacturing an active matrix liquid crystal display device of the present invention has the following effects.
即ち、薄膜トランジスタや行・列選択線−1−にス7一
ペーザ月がないので、回路的な絶縁破壊を防ぐことが出
来るし、画素電極と共通電極とのギャップが均一となり
表示品位の向上、製造歩留の向」二が計れる。That is, since there is no spacer in the thin film transistor or the row/column selection line -1, it is possible to prevent dielectric breakdown in the circuit, and the gap between the pixel electrode and the common electrode is uniform, improving display quality. The direction of manufacturing yield can be measured.
第1−図は本発明のアクティブマ1へワックス型液晶表
示装置の製造方法の一実施例を示す図であり、第1図(
a)は平面図、第1図(1))は第1図(a)のA−A
断面図、第1図(c)はスペーサ材を示す説明図、第2
図は従来の製造方法によるアクティブマトリックス型液
晶表示装置の説明用断面図である。
1.21・・・第1基板 12・・第2基板3
.23・ トレイン電極 4,24・・ソース電極
5.25・・・半導体膜 6,26・絶縁膜7
.27・・・グー1〜電極 1.0.30・・配
向膜を兼ねる絶縁膜11、31・・・スペーサ材
13・・・対向電極28・・列選択線
29・行選択線代理人 弁理士 井 」−−−一 男
\QFIG. 1 is a diagram showing an embodiment of the method for manufacturing a wax-type liquid crystal display device using an active material 1 according to the present invention.
a) is a plan view, and Figure 1 (1)) is A-A in Figure 1 (a).
A cross-sectional view, FIG. 1(c) is an explanatory view showing the spacer material, and FIG.
The figure is an explanatory cross-sectional view of an active matrix type liquid crystal display device manufactured by a conventional manufacturing method. 1.21...First substrate 12...Second substrate 3
.. 23. Train electrode 4, 24... Source electrode 5. 25... Semiconductor film 6, 26. Insulating film 7
.. 27...Goo 1~electrode 1.0.30...Insulating film 11, which also serves as alignment film, 31...Spacer material
13...Counter electrode 28...Column selection line
29・Line selection line agent Patent attorney I” --- Kazuo\Q
Claims (1)
素電極がマトリックス状に配列形成されてなる第1基板
と対向電極が形成された第2基板との間に液晶層が挟持
されると共に、スペーサ材により所定の間隔に保たれて
なるアクティブマトリックス型液晶表示装置の製造方法
において、前記スペーサ材を電気的に同一極性とし、前
記画素電極をこれと反対の極性に帯電させることにより
、前記スペーサ材を前記画素電極の上にのみ散布させる
ことを特徴とするアクティブマトリックス型液晶表示装
置の製造方法。A liquid crystal layer is sandwiched between a first substrate on which a plurality of pixel electrodes selectively driven by a plurality of thin film transistors are arranged in a matrix, and a second substrate on which a counter electrode is formed, and the liquid crystal layer is held in a predetermined position by a spacer material. In the method for manufacturing an active matrix liquid crystal display device, the spacer material is electrically polarized to the same polarity, and the pixel electrode is electrically charged to the opposite polarity. A method for manufacturing an active matrix liquid crystal display device, characterized in that the liquid crystal display device is sprayed only on electrodes.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60289197A JPH083587B2 (en) | 1985-12-24 | 1985-12-24 | Method for manufacturing active matrix type liquid crystal display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60289197A JPH083587B2 (en) | 1985-12-24 | 1985-12-24 | Method for manufacturing active matrix type liquid crystal display device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62148927A true JPS62148927A (en) | 1987-07-02 |
JPH083587B2 JPH083587B2 (en) | 1996-01-17 |
Family
ID=17740033
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60289197A Expired - Lifetime JPH083587B2 (en) | 1985-12-24 | 1985-12-24 | Method for manufacturing active matrix type liquid crystal display device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH083587B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6424231A (en) * | 1987-07-21 | 1989-01-26 | Alps Electric Co Ltd | Thin film transistor |
JPH01284830A (en) * | 1988-05-12 | 1989-11-16 | Canon Inc | Spreading device for spacer material |
JPH03167529A (en) * | 1989-11-27 | 1991-07-19 | Fujitsu Ltd | Active matrix type liquid crystal display device |
FR2674662A1 (en) * | 1991-03-27 | 1992-10-02 | France Telecom | METHOD FOR DEPOSITING LIQUID CRYSTAL DISPLAY THICKNESS SIZES |
US6577373B1 (en) | 1997-06-13 | 2003-06-10 | Sekisui Chemical Co., Ltd. | Liquid crystal display and method of manufacturing the same |
US7223817B2 (en) | 1998-09-02 | 2007-05-29 | Kaneka Corporation | Polymer, processes for producing polymer and composition |
-
1985
- 1985-12-24 JP JP60289197A patent/JPH083587B2/en not_active Expired - Lifetime
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6424231A (en) * | 1987-07-21 | 1989-01-26 | Alps Electric Co Ltd | Thin film transistor |
JPH01284830A (en) * | 1988-05-12 | 1989-11-16 | Canon Inc | Spreading device for spacer material |
JPH03167529A (en) * | 1989-11-27 | 1991-07-19 | Fujitsu Ltd | Active matrix type liquid crystal display device |
FR2674662A1 (en) * | 1991-03-27 | 1992-10-02 | France Telecom | METHOD FOR DEPOSITING LIQUID CRYSTAL DISPLAY THICKNESS SIZES |
US6577373B1 (en) | 1997-06-13 | 2003-06-10 | Sekisui Chemical Co., Ltd. | Liquid crystal display and method of manufacturing the same |
US7223817B2 (en) | 1998-09-02 | 2007-05-29 | Kaneka Corporation | Polymer, processes for producing polymer and composition |
Also Published As
Publication number | Publication date |
---|---|
JPH083587B2 (en) | 1996-01-17 |
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