JPH083587B2 - Method for manufacturing active matrix type liquid crystal display device - Google Patents
Method for manufacturing active matrix type liquid crystal display deviceInfo
- Publication number
- JPH083587B2 JPH083587B2 JP60289197A JP28919785A JPH083587B2 JP H083587 B2 JPH083587 B2 JP H083587B2 JP 60289197 A JP60289197 A JP 60289197A JP 28919785 A JP28919785 A JP 28919785A JP H083587 B2 JPH083587 B2 JP H083587B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- substrate
- crystal display
- display device
- active matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13392—Gaskets; Spacers; Sealing of cells spacers dispersed on the cell substrate, e.g. spherical particles, microfibres
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は第１基板にマトリックス状に配列形成された
複数の表示画素電極それぞれに、この表示画素電極を選
択駆動させる薄膜トランジスタが設けられてなるアクテ
ィブマトリックス型液晶装置の製造方法に係り、特に第
１基板に形成された画素電極と第２基板に形成された対
向電極との間隔（以下ギャップと云う）を均一に保ち、
良好な表示品位を得られるようにするアクティブマトリ
ックス型液晶表示装置の製造方法に関するものである。Description: TECHNICAL FIELD OF THE INVENTION The present invention is an active device in which a plurality of display pixel electrodes arranged in a matrix on a first substrate are provided with thin film transistors for selectively driving the display pixel electrodes. The present invention relates to a method for manufacturing a matrix type liquid crystal device, and in particular, keeps a uniform gap (hereinafter referred to as a gap) between a pixel electrode formed on a first substrate and a counter electrode formed on a second substrate,
The present invention relates to a method for manufacturing an active matrix type liquid crystal display device which can obtain good display quality.
最近の液晶表示装置として、テレビ表示やグラフィッ
クスディスプレイ等を指向した大容量、高密度のアクテ
ィブマトリックス型液晶表示装置の開発、実用化が盛ん
である。このような液晶表示装置では、クロストークの
ない高コントラストの表示が行えるように各画素の駆
動、制御を行う手段として半導体スイッチが用いられて
いる。この半導体スイッチとしては単結晶Si基板状に形
成されたMOSFETや最近では透過型表示が可能であり、ま
た大面積化も容易であるなどの理由から透明絶縁基板上
に形成された薄膜トランジスタ（TFT）などが用いられ
ている。As a recent liquid crystal display device, a large-capacity, high-density active matrix liquid crystal display device directed to a television display, a graphics display, or the like has been developed and put to practical use. In such a liquid crystal display device, a semiconductor switch is used as a means for driving and controlling each pixel so that high-contrast display without crosstalk can be performed. For this semiconductor switch, a MOSFET formed on a single crystal Si substrate or a thin film transistor (TFT) formed on a transparent insulating substrate for reasons such as transmissive display is possible recently and it is easy to increase the area. Are used.
次に、第２図によりアクティブマトリックス型液晶表
示装置の一例を説明する。Next, an example of the active matrix type liquid crystal display device will be described with reference to FIG.
即ち、ガラスまたはプラスチックからなる第１基板
（１）にはITO膜などの透明導電膜からなる画素電極
（２）と、この画素電極（２）と一体のドレイン電極
（３）及びソース電極（４）と、このドレイン電極
（３）とソース電極（４）とに一部が重なるように設け
られた半導体膜（５）と、この半導体層（５）SiO2など
からなる絶縁膜（６）を介して設けられたゲート電極
（７）と、これらの上面に被着形成された配向膜を兼ね
る絶縁膜（10）とから構成されている。一方、第２基板
（12）にはITO膜などの透明導電膜からなる対向電極（1
3）が形成されている。That is, the first substrate (1) made of glass or plastic has a pixel electrode (2) made of a transparent conductive film such as an ITO film, a drain electrode (3) and a source electrode (4) integrated with the pixel electrode (2). ), A semiconductor film (5) provided so as to partially overlap the drain electrode (3) and the source electrode (4), and an insulating film (6) composed of this semiconductor layer (5) SiO 2 and the like. It is composed of a gate electrode (7) provided via the insulating film and an insulating film (10) formed on the upper surface of the gate electrode (7) and also serving as an alignment film. On the other hand, the second substrate (12) has a counter electrode (1) made of a transparent conductive film such as an ITO film.
3) has been formed.
然るに、このようなアクティブマトリックス型液晶表
示装置においては、第１基板（１）上の凹凸は配向膜を
兼ねる絶縁膜（10）を入れると約４μｍ（4000Å）程度
にもなり、画素電極（２）と対向電極（13）とのギャッ
プを12μｍ程度に均一におさえるためにスペーサ材（1
1）を入れると、画素電極（２）では良いがトランジス
タと、または図示しない列・行選択線の立体交差部上な
どにスペーサ材（111）が乗ると、ギャップはこのスペ
ーサ材（111）できまることになる。そのため、スペー
サ材（111）は変形し、更に、トランジスタや列・行選
択線の立体交差部などを押圧することになり、回路的な
絶縁破壊の原因となるし、また、画素電極（２）と対向
電極（13）間のギャップを均一に出来ないため、表示品
位や製造歩留を悪くする原因となっている。However, in such an active matrix type liquid crystal display device, the unevenness on the first substrate (1) becomes about 4 μm (4000 Å) when the insulating film (10) also serving as the alignment film is inserted, and the pixel electrode (2 ) And the counter electrode (13) with a gap of about 12 μm.
When 1) is inserted, the pixel electrode (2) is good, but when the spacer material (11 1 ) is placed on the transistor, or on the three-dimensional intersection of column / row selection lines (not shown), the gap becomes the spacer material (11 1 ) You can do it. As a result, the spacer material (11 1 ) is deformed and further presses the transistors and the three-dimensional intersections of the column / row selection lines, which causes a dielectric breakdown in the circuit and also causes the pixel electrodes (2 ) And the counter electrode (13) cannot be made uniform, which deteriorates display quality and manufacturing yield.
これは、トランジスタの上に光による漏れ電流を防ぐ
ための遮光用の金属膜を設ける場合も同等である。This is also the case when a light-shielding metal film for preventing a leakage current due to light is provided on the transistor.
本発明は上述した問題点に鑑みてなされたものであ
り、スペーサ材を画素電極の上にうまく散布することが
可能なアクティブマトリックス型液晶表示装置の製造方
法を提供することを目的としている。The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a method for manufacturing an active matrix type liquid crystal display device, in which a spacer material can be well dispersed on pixel electrodes.
本発明は、スイッチ素子に接続された画素電極がマト
リックス状に配列されてなる第１基板と、この第１基板
に対向する第２基板と、第１基板と第２基板との間にス
ペーサ材により所定間隔で保持された液晶層とを備えた
アクティブマトリックス型液晶表示装置の製造方法にお
いて、スペーサ材を電気的に同一極性とし、画素電極を
これと反対の極性に帯電させてスペーサ材を第１基板上
に散布する工程を備えたことを特徴としたアクティブマ
トリックス型液晶表示装置の製造方法。The present invention provides a first substrate in which pixel electrodes connected to a switch element are arranged in a matrix, a second substrate facing the first substrate, and a spacer material between the first substrate and the second substrate. In the method of manufacturing an active matrix type liquid crystal display device having a liquid crystal layer held at a predetermined interval by the method, the spacer material is electrically made to have the same polarity, and the pixel electrode is charged to the opposite polarity to charge the spacer material to the first polarity. 1. A method for manufacturing an active matrix type liquid crystal display device, which comprises a step of spraying on one substrate.
およびスペーサ材の散布時に、スイッチ素子に接続さ
れる配線をスペーサ材と同一極性とすることを特徴とし
たアクティブマトリックス型液晶表示装置の製造方法で
ある。And a method of manufacturing an active matrix type liquid crystal display device, characterized in that the wiring connected to the switch element has the same polarity as the spacer material when the spacer material is sprayed.
次に本発明のアクティブマトリックス型液晶表示装置
の製造方法の一実施例を第１図により説明する。但し、
対向電極を有する第２の基板及び液晶層は省略する。Next, one embodiment of a method for manufacturing an active matrix type liquid crystal display device of the present invention will be described with reference to FIG. However,
The second substrate having a counter electrode and the liquid crystal layer are omitted.
即ち、ガラスまたはプラスチックからなる基板（21）
上にはITOなどの透明導電膜からなる画素電極（22）
と、この画素電極（22）と一体のドレイン電極（23）及
びソース電極（24）と、このドレイン電極（23）とソー
ス電極（24）とに一部が重なるように設けられた半導体
膜（25）と、この半導体層（25）にSiO2などからなる絶
縁膜（26）を介して設けられたゲート電極（27）と、ソ
ース電極（24）と一体形成された列選択線（28）と、ゲ
ート電極（27）と一体形成された行選択線（29）と、こ
れらの上面に被着形成された配向膜を兼ねる絶縁膜（3
0）が形成されている。上述した構成からなる複数の薄
膜トランジスタにより選択駆動される複数の画素電極が
マトリックス状に配列形成されてなる基板（21）上の画
素電極（22）上にのみスペーサ材（31）を散布させるた
めには、先ず、配向膜を兼ねる絶縁膜（30）を布でラビ
ングして配向性をもたせると共に負−に帯電させてお
く。That is, a substrate made of glass or plastic (21)
Pixel electrode (22) made of transparent conductive film such as ITO on top
A drain electrode (23) and a source electrode (24) integrated with the pixel electrode (22), and a semiconductor film (a part of the drain electrode (23) and the source electrode (24) are overlapped with each other ( 25), a gate electrode (27) provided on the semiconductor layer (25) via an insulating film (26) made of SiO 2 or the like, and a column selection line (28) integrally formed with the source electrode (24). A row select line (29) formed integrally with the gate electrode (27), and an insulating film (3) also functioning as an alignment film deposited on the upper surface of these.
0) has been formed. In order to disperse the spacer material (31) only on the pixel electrode (22) on the substrate (21) in which a plurality of pixel electrodes selectively driven by the plurality of thin film transistors having the above-mentioned configuration are arranged in matrix First, the insulating film (30), which also serves as the alignment film, is rubbed with a cloth so as to have the alignment property and is also negatively charged.
次に、列選択線（28）と行選択線（29）に画素電極
（22）上の配向膜を兼ねる絶縁膜（301）の負−の帯電
が打消されない程度の正＋電位を印加する。これは列選
択線（28）と行選択線（29）を連結して印加すればよ
い。この様にして列選択線（28）、行選択線（29）、薄
膜トランジスタ上の配向膜を兼ねる絶縁膜（302）は正
＋に帯電される。Next, the negative insulating film also serving as an alignment film of the pixel electrode (22) on the column select line (28) and the row select line (29) (30 1) - applying a degree of charging is not canceled in a positive + potential . This may be applied by connecting the column selection line (28) and the row selection line (29). Column select lines in this way (28), the row select line (29), an insulating film (30 2) also serving as an alignment layer on the thin film transistor is charged positively +.
次に、ガラス、プラスチックなどの均一径を有する丸
棒、球などのスペーサ材（31）を正＋電価に帯電したも
のを種々な散布方法で散布すると、列選択線（28）、行
選択線（29）及び薄膜トランジスタ上の配向膜を兼ねる
絶縁膜（302）上には散布されず、画素電極（22）上の
配向膜を兼ねる絶縁膜（301）上にのみ散布されること
になる。Next, a spacer material (31) such as a round bar or sphere having a uniform diameter such as glass or plastic, which is positively charged, is sprayed by various spraying methods to select the column selection line (28) and row selection. The line (29) and the insulating film (30 2 ) that also serves as the alignment film on the thin film transistor are not scattered, but only the insulating film (30 1 ) that also serves as the alignment film on the pixel electrode (22). Become.
このような製造方法は列選択線（28）、行選択線（2
9）を連結しておけばよく、これはトランジスタの静電
破壊防止上の必要条件であり、またラビングにより画素
電極（22）上の配向膜を兼ねる絶縁膜（301）は必然的
に帯電するため、スペーサ材（31）を配向膜を兼ねる絶
縁膜（30）をラビングした時の帯電と逆特性に帯電させ
るだけで上述のような選択散布が可能である。Such a manufacturing method uses the column selection line (28) and row selection line (2
It is only necessary to connect 9), which is a necessary condition for preventing electrostatic breakdown of the transistor, and the insulating film (30 1 ) that also functions as the alignment film on the pixel electrode (22) is inevitably charged by rubbing. Therefore, the selective spraying as described above is possible only by charging the spacer material (31) with a characteristic opposite to that of the charging when the insulating film (30) also serving as an alignment film is rubbed.
上述のように本発明のアクティブマトリックス型液晶
表示装置の製造方法によれば次の効果がある。As described above, the method of manufacturing the active matrix type liquid crystal display device of the present invention has the following effects.
即ち、薄膜トランジスタ等のスイツチ素子や行・列選
択線上にスベーサ材が配置されることが積極的に防止さ
れるので、回路的な絶縁破壊を防ぐことが出来るし、画
素電極と共通電極とのギャップが均一となり表示品位の
向上、製造歩留の向上が計れる。That is, it is possible to positively prevent the switch element such as a thin film transistor or the like from being arranged on the row / column selection line, so that it is possible to prevent a circuit dielectric breakdown and prevent a gap between the pixel electrode and the common electrode. The display quality is improved and the manufacturing yield is improved.
第１図は本発明のアクティブマトリックス型液晶表示装
置の製造方法の一実施例を示す図であり、第１図（ａ）
は平面図、第１図（ｂ）は第１図（ａ）のＡ−Ａ断面
図、第１図（ｃ）はスペーサ材を示す説明図、第２図は
従来の製造方法によるアクティブマトリックス型液晶表
示装置の説明用断面図である。 1,21……第１基板、12……第２基板 3,23……ドレイン電極、4,24……ソース電極 5,25……半導体膜、6,26……絶縁膜 7,27……ゲート電極、10,30……配向膜を兼ねる絶縁膜 11,31……スペーサ材、13……対向電極 28……列選択線、29……行選択線FIG. 1 is a diagram showing an embodiment of a method for manufacturing an active matrix type liquid crystal display device of the present invention, and FIG.
Is a plan view, FIG. 1 (b) is a sectional view taken along line AA of FIG. 1 (a), FIG. 1 (c) is an explanatory view showing a spacer material, and FIG. 2 is an active matrix type by a conventional manufacturing method. It is a sectional view for explanation of a liquid crystal display. 1,21 …… First substrate, 12 …… Second substrate 3,23 …… Drain electrode, 4,24 …… Source electrode 5,25 …… Semiconductor film, 6,26 …… Insulating film 7,27 …… Gate electrode, 10,30 ... Insulating film also serving as alignment film 11,31 ... Spacer material, 13 ... Counter electrode 28 ... Column selection line, 29 ... Row selection line
Claims (2)
リックス状に配列されてなる第１基板と、この第１基板
に対向する第２基板と、この第１基板と第２基板との間
にスペーサ材により所定間隔を保持された液晶層とを備
えたアクティブマトリックス型液晶表示装置の製造方法
において、 前記スペーサ材を電気的に同一極性とし、前記画素電極
をこれと反対の極性に帯電させて前記スペーサ材を前記
第１基板上に散布する工程を備えたことを特徴としたア
クティブマトリックス型液晶表示装置の製造方法。1. A first substrate on which pixel electrodes connected to a switch element are arranged in a matrix, a second substrate facing the first substrate, and between the first substrate and the second substrate. In a method for manufacturing an active matrix liquid crystal display device including a liquid crystal layer held at a predetermined distance by a spacer material, the spacer material is electrically set to the same polarity, and the pixel electrodes are charged to the opposite polarity. A method of manufacturing an active matrix type liquid crystal display device, comprising a step of spraying the spacer material on the first substrate.
続される配線を前記スペーサ材と同一極性とすることを
特徴とした特許請求の範囲第１項記載のアクティブマト
リックス型液晶表示装置の製造方法。2. A method of manufacturing an active matrix type liquid crystal display device according to claim 1, wherein the wiring connected to the switch element has the same polarity as that of the spacer material when the spacer material is scattered.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60289197A JPH083587B2 (en) | 1985-12-24 | 1985-12-24 | Method for manufacturing active matrix type liquid crystal display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60289197A JPH083587B2 (en) | 1985-12-24 | 1985-12-24 | Method for manufacturing active matrix type liquid crystal display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62148927A JPS62148927A (en) | 1987-07-02 |
| JPH083587B2 true JPH083587B2 (en) | 1996-01-17 |
Family
ID=17740033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60289197A Expired - Lifetime JPH083587B2 (en) | 1985-12-24 | 1985-12-24 | Method for manufacturing active matrix type liquid crystal display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH083587B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01284830A (en) * | 1988-05-12 | 1989-11-16 | Canon Inc | Spreading device for spacer material |
| JPH0833552B2 (en) * | 1987-07-21 | 1996-03-29 | 株式会社フロンテック | Liquid crystal display element |
| JPH07119917B2 (en) * | 1989-11-27 | 1995-12-20 | 富士通株式会社 | Active matrix liquid crystal display device |
| FR2674662B1 (en) * | 1991-03-27 | 1993-05-21 | France Telecom | METHOD FOR DEPOSITING LIQUID CRYSTAL DISPLAY THICKNESS CALES. |
| CA2294060A1 (en) | 1997-06-13 | 1998-12-17 | Sekisui Chemical Co., Ltd. | Liquid crystal display and method of manufacturing the same |
| US6930147B1 (en) | 1998-09-02 | 2005-08-16 | Kaneka Corporation | Polymer, processes for producing polymer, and composition |
-
1985
- 1985-12-24 JP JP60289197A patent/JPH083587B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62148927A (en) | 1987-07-02 |
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