JPH03159995A - エピタキシャル結晶成長におけるドーピング方法 - Google Patents
エピタキシャル結晶成長におけるドーピング方法Info
- Publication number
- JPH03159995A JPH03159995A JP29941089A JP29941089A JPH03159995A JP H03159995 A JPH03159995 A JP H03159995A JP 29941089 A JP29941089 A JP 29941089A JP 29941089 A JP29941089 A JP 29941089A JP H03159995 A JPH03159995 A JP H03159995A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- crystal growth
- crystal
- temperature
- doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29941089A JPH03159995A (ja) | 1989-11-16 | 1989-11-16 | エピタキシャル結晶成長におけるドーピング方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29941089A JPH03159995A (ja) | 1989-11-16 | 1989-11-16 | エピタキシャル結晶成長におけるドーピング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH03159995A true JPH03159995A (ja) | 1991-07-09 |
JPH0585518B2 JPH0585518B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-12-07 |
Family
ID=17872202
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP29941089A Granted JPH03159995A (ja) | 1989-11-16 | 1989-11-16 | エピタキシャル結晶成長におけるドーピング方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03159995A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20250022175A (ko) | 2022-06-10 | 2025-02-14 | 메르크 파텐트 게엠베하 | 조성물 |
-
1989
- 1989-11-16 JP JP29941089A patent/JPH03159995A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0585518B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-12-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5338389A (en) | Method of epitaxially growing compound crystal and doping method therein | |
US5250148A (en) | Process for growing GaAs monocrystal film | |
JPS6134929A (ja) | 半導体結晶成長装置 | |
JPH0350834B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
GB2162206A (en) | Process for forming monocrystalline thin film of element semiconductor | |
US3963539A (en) | Two stage heteroepitaxial deposition process for GaAsP/Si LED's | |
US6334901B1 (en) | Apparatus for forming semiconductor crystal | |
GB2162862A (en) | Process for forming monocrystalline thin film of compound semiconductor | |
JPS6134927A (ja) | 化合物半導体単結晶薄膜の成長法 | |
JP2717786B2 (ja) | 半導体結晶のエピタキシャル成長法及びその方法に用いる分子層エピタキシー装置 | |
EP0439064B1 (en) | Method of epitaxially growing compound crystal and doping method therein | |
JPH03159995A (ja) | エピタキシャル結晶成長におけるドーピング方法 | |
JP2736655B2 (ja) | 化合物半導体結晶成長方法 | |
Tsang | Chemical beam epitaxy of InGaAs | |
JP2587624B2 (ja) | 化合物半導体のエピタキシヤル結晶成長方法 | |
JP2821557B2 (ja) | 化合物半導体単結晶薄膜の成長方法 | |
JP2821563B2 (ja) | 化合物結晶のエピタキシャル成長方法及びそのドーピング方法 | |
JPH04320038A (ja) | n形のII−VI族化合物半導体を結晶成長する方法 | |
JP3141628B2 (ja) | 化合物半導体素子及びその製造方法 | |
JPS61260622A (ja) | GaAs単結晶薄膜の成長法 | |
JP2753832B2 (ja) | 第▲iii▼・v族化合物半導体の気相成長法 | |
JPS6317293A (ja) | 化合物半導体薄膜形成法 | |
JP2620546B2 (ja) | 化合物半導体のエピタキシヤル層の製造方法 | |
JPH01173708A (ja) | 半導体素子 | |
JPH01179312A (ja) | 3‐5族化合物半導体の気相成長方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |