JPH0314218B2 - - Google Patents
Info
- Publication number
- JPH0314218B2 JPH0314218B2 JP16766884A JP16766884A JPH0314218B2 JP H0314218 B2 JPH0314218 B2 JP H0314218B2 JP 16766884 A JP16766884 A JP 16766884A JP 16766884 A JP16766884 A JP 16766884A JP H0314218 B2 JPH0314218 B2 JP H0314218B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- dielectric
- diamond
- electrode
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
- 229910052799 carbon Inorganic materials 0.000 claims description 14
- 239000003990 capacitor Substances 0.000 claims description 11
- 239000010410 layer Substances 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- -1 SnO 2 or ZnO Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16766884A JPS6144415A (ja) | 1984-08-09 | 1984-08-09 | 薄膜コンデンサ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16766884A JPS6144415A (ja) | 1984-08-09 | 1984-08-09 | 薄膜コンデンサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6144415A JPS6144415A (ja) | 1986-03-04 |
| JPH0314218B2 true JPH0314218B2 (enExample) | 1991-02-26 |
Family
ID=15854004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16766884A Granted JPS6144415A (ja) | 1984-08-09 | 1984-08-09 | 薄膜コンデンサ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6144415A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4902261B2 (ja) * | 2006-05-09 | 2012-03-21 | 株式会社細川製作所 | 石抜き精米機 |
| BR112014011422A2 (pt) | 2011-11-16 | 2017-05-16 | A Stuart Martin | dispositivo de armazenamento de alta densidade de energia |
-
1984
- 1984-08-09 JP JP16766884A patent/JPS6144415A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6144415A (ja) | 1986-03-04 |
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