JPS6144415A - 薄膜コンデンサ - Google Patents
薄膜コンデンサInfo
- Publication number
- JPS6144415A JPS6144415A JP16766884A JP16766884A JPS6144415A JP S6144415 A JPS6144415 A JP S6144415A JP 16766884 A JP16766884 A JP 16766884A JP 16766884 A JP16766884 A JP 16766884A JP S6144415 A JPS6144415 A JP S6144415A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- dielectric
- present
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- 239000003990 capacitor Substances 0.000 claims description 11
- 239000010410 layer Substances 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16766884A JPS6144415A (ja) | 1984-08-09 | 1984-08-09 | 薄膜コンデンサ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16766884A JPS6144415A (ja) | 1984-08-09 | 1984-08-09 | 薄膜コンデンサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6144415A true JPS6144415A (ja) | 1986-03-04 |
| JPH0314218B2 JPH0314218B2 (enExample) | 1991-02-26 |
Family
ID=15854004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16766884A Granted JPS6144415A (ja) | 1984-08-09 | 1984-08-09 | 薄膜コンデンサ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6144415A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007301450A (ja) * | 2006-05-09 | 2007-11-22 | Hosokawa Seisakusho:Kk | 石抜き精米機 |
| JP2015502040A (ja) * | 2011-11-16 | 2015-01-19 | スチュアート，マーティン，エー． | 高エネルギー密度蓄電装置 |
-
1984
- 1984-08-09 JP JP16766884A patent/JPS6144415A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007301450A (ja) * | 2006-05-09 | 2007-11-22 | Hosokawa Seisakusho:Kk | 石抜き精米機 |
| JP2015502040A (ja) * | 2011-11-16 | 2015-01-19 | スチュアート，マーティン，エー． | 高エネルギー密度蓄電装置 |
| US10026555B2 (en) | 2011-11-16 | 2018-07-17 | Martin A. Stuart | High energy density storage device |
| US10636573B2 (en) | 2011-11-16 | 2020-04-28 | Barbara Stuart | High energy density storage device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0314218B2 (enExample) | 1991-02-26 |
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