JPH031374B2 - - Google Patents

Info

Publication number
JPH031374B2
JPH031374B2 JP56177015A JP17701581A JPH031374B2 JP H031374 B2 JPH031374 B2 JP H031374B2 JP 56177015 A JP56177015 A JP 56177015A JP 17701581 A JP17701581 A JP 17701581A JP H031374 B2 JPH031374 B2 JP H031374B2
Authority
JP
Japan
Prior art keywords
alloy
liquid metal
ion
ion source
arsenic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56177015A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57132653A (en
Inventor
Wan Bikutaa
Ee Uisotsuki Josefu
Eru Tangonan Guregorii
Eru Serigaa Robaato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of JPS57132653A publication Critical patent/JPS57132653A/ja
Publication of JPH031374B2 publication Critical patent/JPH031374B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/26—Ion sources; Ion guns using surface ionisation, e.g. field effect ion sources, thermionic ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0802—Field ionization sources
    • H01J2237/0805—Liquid metal sources

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Heat Treatment Of Nonferrous Metals Or Alloys (AREA)
JP56177015A 1980-11-03 1981-11-04 Ion source and method of modifying property of substance Granted JPS57132653A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/203,294 US4367429A (en) 1980-11-03 1980-11-03 Alloys for liquid metal ion sources

Publications (2)

Publication Number Publication Date
JPS57132653A JPS57132653A (en) 1982-08-17
JPH031374B2 true JPH031374B2 (enrdf_load_stackoverflow) 1991-01-10

Family

ID=22753350

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56177015A Granted JPS57132653A (en) 1980-11-03 1981-11-04 Ion source and method of modifying property of substance

Country Status (3)

Country Link
US (1) US4367429A (enrdf_load_stackoverflow)
JP (1) JPS57132653A (enrdf_load_stackoverflow)
GB (1) GB2087139B (enrdf_load_stackoverflow)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57201527A (en) * 1981-06-01 1982-12-10 Toshiba Corp Ion implantation method
DE3134337A1 (de) * 1981-08-31 1983-03-24 Technics GmbH Europa, 8011 Kirchheim Ionenstrahlkanone
JPS5838906B2 (ja) * 1981-09-03 1983-08-26 日本電子株式会社 金属イオン源
JPS5878557U (ja) * 1981-11-24 1983-05-27 株式会社日立製作所 電界放出型イオン源
US4577135A (en) * 1982-02-22 1986-03-18 United Kingdom Atomic Energy Authority Liquid metal ion sources
JPS5935347A (ja) * 1982-08-20 1984-02-27 Masahiko Tsuchiya イオン生成装置
US4521800A (en) * 1982-10-15 1985-06-04 Standard Oil Company (Indiana) Multilayer photoelectrodes utilizing exotic materials
JPS59191225A (ja) * 1983-04-15 1984-10-30 Hitachi Ltd 液体金属イオン種合金
US4424104A (en) 1983-05-12 1984-01-03 International Business Machines Corporation Single axis combined ion and vapor source
US4556798A (en) * 1983-07-12 1985-12-03 Hughes Aircraft Company Focused ion beam column
JPH0622094B2 (ja) * 1983-11-28 1994-03-23 株式会社日立製作所 液体金属イオン源
JPS60200449A (ja) * 1984-03-26 1985-10-09 Hitachi Ltd イオンビ−ムによるプロセス方法と装置
US4629931A (en) * 1984-11-20 1986-12-16 Hughes Aircraft Company Liquid metal ion source
US4686414A (en) * 1984-11-20 1987-08-11 Hughes Aircraft Company Enhanced wetting of liquid metal alloy ion sources
JPS61142645A (ja) * 1984-12-17 1986-06-30 Hitachi Ltd 正，負兼用イオン源
JPH0685309B2 (ja) * 1985-12-13 1994-10-26 株式会社日立製作所 液体金属イオン源
US4775818A (en) * 1986-04-14 1988-10-04 Hughes Aircraft Company Liquid metal ion source and alloy
US4670685A (en) * 1986-04-14 1987-06-02 Hughes Aircraft Company Liquid metal ion source and alloy for ion emission of multiple ionic species
US4731562A (en) * 1986-05-27 1988-03-15 The United States Of America As Represented By The Department Of Energy Electrohydrodynamically driven large-area liquid ion sources
NL8602176A (nl) * 1986-08-27 1988-03-16 Philips Nv Ionen bundel apparaat voor nabewerking van patronen.
US5165954A (en) * 1986-09-02 1992-11-24 Microbeam, Inc. Method for repairing semiconductor masks & reticles
JPS62216130A (ja) * 1987-03-13 1987-09-22 Hitachi Ltd 液体金属イオン源
JPS6419650A (en) * 1987-07-14 1989-01-23 Denki Kagaku Kogyo Kk Field emission type ion source
US5035787A (en) * 1987-07-22 1991-07-30 Microbeam, Inc. Method for repairing semiconductor masks and reticles
US4892752A (en) * 1987-08-12 1990-01-09 Oki Electric Industry Co., Ltd. Method of ion implantation
JP2713923B2 (ja) * 1987-10-07 1998-02-16 株式会社日立製作所 集束イオンビームを用いたデバイス加工方法
JPH0680662B2 (ja) * 1987-12-02 1994-10-12 株式会社日立製作所 Ｉｃ素子の修正方法
JPH0680672B2 (ja) * 1987-12-02 1994-10-12 株式会社日立製作所 Ｉｃ素子の加工装置
US5034612A (en) * 1989-05-26 1991-07-23 Micrion Corporation Ion source method and apparatus
US4994711A (en) * 1989-12-22 1991-02-19 Hughes Aircraft Company High brightness solid electrolyte ion source
JPH03241646A (ja) * 1990-02-19 1991-10-28 Seiko Instr Inc 液体金属イオン源のコントロール方法
KR100271244B1 (ko) * 1993-09-07 2000-11-01 히가시 데쓰로 전자빔 여기식 플라즈마장치
US6096263A (en) * 1993-10-26 2000-08-01 Lucent Technologies Inc. Article comprising an intermetallic superconductor material
US5413755A (en) * 1993-10-26 1995-05-09 At&T Corp. Article comprising an intermetallic superconducting material
JP2829232B2 (ja) * 1993-11-15 1998-11-25 株式会社日立製作所 Ｉｃ素子の加工装置
JPH06244179A (ja) * 1993-11-15 1994-09-02 Hitachi Ltd Ｉｃ素子の修正方法
JP2829231B2 (ja) * 1993-11-15 1998-11-25 株式会社日立製作所 Ｉｃ素子の修正方法
JP2829254B2 (ja) * 1995-04-26 1998-11-25 株式会社日立製作所 Ｉｃ素子の修正方法及びその装置
JP2746554B2 (ja) * 1995-10-27 1998-05-06 株式会社日立製作所 イオンビーム除去加工方法及びその装置並びにイオンビーム局所成膜方法及びその装置
JP5322363B2 (ja) * 2000-02-09 2013-10-23 エフ イー アイ カンパニ 微小二次加工処理用マルチカラムｆｉｂ
US7129513B2 (en) * 2004-06-02 2006-10-31 Xintek, Inc. Field emission ion source based on nanostructure-containing material
EP1956634A1 (en) * 2007-02-06 2008-08-13 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Method and apparatus for in-situ sample preparation
DE102007027097B4 (de) * 2007-06-12 2010-12-30 Forschungszentrum Dresden - Rossendorf E.V. Flüssigmetall-Ionenquelle zur Erzeugung von Lithium-Ionenstrahlen
US7827779B1 (en) * 2007-09-10 2010-11-09 Alameda Applied Sciences Corp. Liquid metal ion thruster array
EP2331946B1 (en) * 2008-08-29 2018-12-26 Carl Zeiss Microscopy, LLC Ion beam stabilization
US8453426B2 (en) * 2009-04-06 2013-06-04 Raytheon Company Current controlled field emission thruster
US8134290B2 (en) 2009-04-30 2012-03-13 Scientific Instrument Services, Inc. Emission filaments made from a rhenium alloy and method of manufacturing thereof
JP5922125B2 (ja) 2010-08-31 2016-05-24 エフ・イ−・アイ・カンパニー 低質量種と高質量種の両方を含むイオン源を使用した誘導および試料処理

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4328667A (en) * 1979-03-30 1982-05-11 The European Space Research Organisation Field-emission ion source and ion thruster apparatus comprising such sources
US4318029A (en) * 1980-05-12 1982-03-02 Hughes Aircraft Company Liquid metal ion source
US4318030A (en) * 1980-05-12 1982-03-02 Hughes Aircraft Company Liquid metal ion source
JPS584424B2 (ja) * 1980-07-31 1983-01-26 理化学研究所 イオンビ−ム形成方法

Also Published As

Publication number Publication date
US4367429A (en) 1983-01-04
GB2087139B (en) 1984-08-01
JPS57132653A (en) 1982-08-17
GB2087139A (en) 1982-05-19

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