JPS6419650A - Field emission type ion source - Google Patents

Field emission type ion source

Info

Publication number
JPS6419650A
JPS6419650A JP17399687A JP17399687A JPS6419650A JP S6419650 A JPS6419650 A JP S6419650A JP 17399687 A JP17399687 A JP 17399687A JP 17399687 A JP17399687 A JP 17399687A JP S6419650 A JPS6419650 A JP S6419650A
Authority
JP
Japan
Prior art keywords
silicon
silicon alloy
gold
acicular electrode
ion source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17399687A
Other languages
Japanese (ja)
Inventor
Akio Mutsukawa
Hirotoshi Hagiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to JP17399687A priority Critical patent/JPS6419650A/en
Publication of JPS6419650A publication Critical patent/JPS6419650A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To make it possible to emit silicon ion beam stably for long time by constituting an acicular electrode out of tungsten whose surface are provided with a large number of grooves in the axis direction and specifying silicon alloy as gold-silicon alloy where a specific amount of silicon is contained and the rest consists of gold. CONSTITUTION:An acicular electrode consists of tungsten whose surface is provided with a large number of grooves in the axis direction and silicon alloy is gold-silicon alloy where silicon is 20 atom %-26 atom % and the rest consists of gold. It is desirable that the groove formed in the surface of the acicular electrode be 0.05-0.5mum in depth. To assemble field emission ion source, a storage part 2 and a heat transmissive supporting material 4 are made of tantalum easy to process and heating elements 6A, 6B use pyrolytic praphite. And gold-silicon alloy 3 of Au80Si20 is put in the storage part and the heating elements are applied with heating current and the temperature of the storage part is set to 600 deg.C. Hereby, it becomes excellent in wettability of the silicon alloy to the acicular electrode and further there never occur such a case that the silicon alloy erodes ion source constituting material such as the acicular electrode, so silicon ion beam can be emitted stably for long time.
JP17399687A 1987-07-14 1987-07-14 Field emission type ion source Pending JPS6419650A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17399687A JPS6419650A (en) 1987-07-14 1987-07-14 Field emission type ion source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17399687A JPS6419650A (en) 1987-07-14 1987-07-14 Field emission type ion source

Publications (1)

Publication Number Publication Date
JPS6419650A true JPS6419650A (en) 1989-01-23

Family

ID=15970825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17399687A Pending JPS6419650A (en) 1987-07-14 1987-07-14 Field emission type ion source

Country Status (1)

Country Link
JP (1) JPS6419650A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57132653A (en) * 1980-11-03 1982-08-17 Hughes Aircraft Co Ion source and method of modifying property of substance
JPS59230240A (en) * 1983-06-14 1984-12-24 Anelva Corp Electric field emittive liquid metal ion source
JPS601717A (en) * 1983-06-20 1985-01-07 Nippon Telegr & Teleph Corp <Ntt> Needle-shaped emitter of field emission type liquid metal ion source

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57132653A (en) * 1980-11-03 1982-08-17 Hughes Aircraft Co Ion source and method of modifying property of substance
JPS59230240A (en) * 1983-06-14 1984-12-24 Anelva Corp Electric field emittive liquid metal ion source
JPS601717A (en) * 1983-06-20 1985-01-07 Nippon Telegr & Teleph Corp <Ntt> Needle-shaped emitter of field emission type liquid metal ion source

Similar Documents

Publication Publication Date Title
JPS57132632A (en) Ion source
EP0275063A3 (en) Light emitting element comprising diamond and method for producing the same
WO1987006390A3 (en) Liquid metal ion source and alloy for ion emission of multiple ionic species
JPS6419650A (en) Field emission type ion source
SE8500419D0 (en) METHOD FOR MANUFACTURE OF ELECTRODE
JPS6424335A (en) Stable impregnated cathod and method of forming it
JPS5618336A (en) Electron emission cathode
JPS5659422A (en) Field emissive cathode
RU92014793A (en) QUANTUM NUCLEAR MEMBER
JPS5611832A (en) Directly heated cathode of electron tube and its manufacture
Chapelle et al. Lowering of excited state populations of HeI in a He-plasma under the influence of laser radiation
Pilzer et al. A new ion source for fission-yield measurements of rare-earth isotopes
JPS55124926A (en) Directly-heated cathode
JPS5397911A (en) Manufacture of abrasion resistant sintered alloy
JPS54127272A (en) Hot-cathode electron source unit
JPS56118243A (en) Cathode for dc type gas discharge indication panel and manufacture
JPS5352997A (en) Thin film type heating resistor body
Ishizawa New Application of Transition Metal Carbides Detailed
LAU Effects of cathode surface roughness on the quality of electron beams(Interim Report)
HIDEAKI Optical waveguide integrated semiconductor laser and manufacture thereof
JPS6445045A (en) Process of ion implantation
Zabrodskii The Change in the Compensation of a Neutron-Doped Si sub 1--x Ge sub x Alloy With Composition
JPS5721045A (en) Manufacture of electrode for discharge lamp
BAUER et al. Neutral beam sources: Applications in science and technology(use in lasers and masers)
Hiller Improvement of the Resistance to Frictional Wear of Aluminum Alloys by Surface Remelting