JPS6419650A - Field emission type ion source - Google Patents
Field emission type ion sourceInfo
- Publication number
- JPS6419650A JPS6419650A JP17399687A JP17399687A JPS6419650A JP S6419650 A JPS6419650 A JP S6419650A JP 17399687 A JP17399687 A JP 17399687A JP 17399687 A JP17399687 A JP 17399687A JP S6419650 A JPS6419650 A JP S6419650A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- silicon alloy
- gold
- acicular electrode
- ion source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To make it possible to emit silicon ion beam stably for long time by constituting an acicular electrode out of tungsten whose surface are provided with a large number of grooves in the axis direction and specifying silicon alloy as gold-silicon alloy where a specific amount of silicon is contained and the rest consists of gold. CONSTITUTION:An acicular electrode consists of tungsten whose surface is provided with a large number of grooves in the axis direction and silicon alloy is gold-silicon alloy where silicon is 20 atom %-26 atom % and the rest consists of gold. It is desirable that the groove formed in the surface of the acicular electrode be 0.05-0.5mum in depth. To assemble field emission ion source, a storage part 2 and a heat transmissive supporting material 4 are made of tantalum easy to process and heating elements 6A, 6B use pyrolytic praphite. And gold-silicon alloy 3 of Au80Si20 is put in the storage part and the heating elements are applied with heating current and the temperature of the storage part is set to 600 deg.C. Hereby, it becomes excellent in wettability of the silicon alloy to the acicular electrode and further there never occur such a case that the silicon alloy erodes ion source constituting material such as the acicular electrode, so silicon ion beam can be emitted stably for long time.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17399687A JPS6419650A (en) | 1987-07-14 | 1987-07-14 | Field emission type ion source |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17399687A JPS6419650A (en) | 1987-07-14 | 1987-07-14 | Field emission type ion source |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6419650A true JPS6419650A (en) | 1989-01-23 |
Family
ID=15970825
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17399687A Pending JPS6419650A (en) | 1987-07-14 | 1987-07-14 | Field emission type ion source |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6419650A (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57132653A (en) * | 1980-11-03 | 1982-08-17 | Hughes Aircraft Co | Ion source and method of modifying property of substance |
JPS59230240A (en) * | 1983-06-14 | 1984-12-24 | Anelva Corp | Electric field emittive liquid metal ion source |
JPS601717A (en) * | 1983-06-20 | 1985-01-07 | Nippon Telegr & Teleph Corp <Ntt> | Needle-shaped emitter of field emission type liquid metal ion source |
-
1987
- 1987-07-14 JP JP17399687A patent/JPS6419650A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57132653A (en) * | 1980-11-03 | 1982-08-17 | Hughes Aircraft Co | Ion source and method of modifying property of substance |
JPS59230240A (en) * | 1983-06-14 | 1984-12-24 | Anelva Corp | Electric field emittive liquid metal ion source |
JPS601717A (en) * | 1983-06-20 | 1985-01-07 | Nippon Telegr & Teleph Corp <Ntt> | Needle-shaped emitter of field emission type liquid metal ion source |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS57132632A (en) | Ion source | |
EP0275063A3 (en) | Light emitting element comprising diamond and method for producing the same | |
WO1987006390A3 (en) | Liquid metal ion source and alloy for ion emission of multiple ionic species | |
JPS6419650A (en) | Field emission type ion source | |
SE8500419D0 (en) | METHOD FOR MANUFACTURE OF ELECTRODE | |
JPS6424335A (en) | Stable impregnated cathod and method of forming it | |
JPS5618336A (en) | Electron emission cathode | |
JPS5659422A (en) | Field emissive cathode | |
RU92014793A (en) | QUANTUM NUCLEAR MEMBER | |
JPS5611832A (en) | Directly heated cathode of electron tube and its manufacture | |
Chapelle et al. | Lowering of excited state populations of HeI in a He-plasma under the influence of laser radiation | |
Pilzer et al. | A new ion source for fission-yield measurements of rare-earth isotopes | |
JPS55124926A (en) | Directly-heated cathode | |
JPS5397911A (en) | Manufacture of abrasion resistant sintered alloy | |
JPS54127272A (en) | Hot-cathode electron source unit | |
JPS56118243A (en) | Cathode for dc type gas discharge indication panel and manufacture | |
JPS5352997A (en) | Thin film type heating resistor body | |
Ishizawa | New Application of Transition Metal Carbides Detailed | |
LAU | Effects of cathode surface roughness on the quality of electron beams(Interim Report) | |
HIDEAKI | Optical waveguide integrated semiconductor laser and manufacture thereof | |
JPS6445045A (en) | Process of ion implantation | |
Zabrodskii | The Change in the Compensation of a Neutron-Doped Si sub 1--x Ge sub x Alloy With Composition | |
JPS5721045A (en) | Manufacture of electrode for discharge lamp | |
BAUER et al. | Neutral beam sources: Applications in science and technology(use in lasers and masers) | |
Hiller | Improvement of the Resistance to Frictional Wear of Aluminum Alloys by Surface Remelting |