JPH03132050A - Tape carrier fitted with bump and semiconductor wherein this is used - Google Patents

Abstract

PURPOSE:To obtain a good quality of junction in the condition that an IC chip is protected enough so as to elevate the reliability of a device by constituting a bump, using metallic material softer than a finger lead which has mechanically enough strength and hardness. CONSTITUTION:A device hole 5 and a sprocket hole are punched out at a polyimide tape 1, and these are piled up, using a soft copper foil 3 and a hard copper foil 4, and are rolled and heat-treated, and are laminated to the tape 1 so that the copper foil 3 may be on the bump formation side. Next, a bump resist pattern 2 is made on the bump formation side, and the copper foil 4 is coated with an backing agent, and the copper foil 3 part is removed, and the pattern of a bump 7 is made. After removal of the pattern 2 and the backing agent 9, the resist pattern of a finger lead 6 is made on the copper foil 4 side, and the bump 7 side is coated with a backing agent and is etched to obtain the bump 7 and the lead 6. Next, plating is applied to the whole face of the lead 6 so as to obtain a tape carrier 11 fitted with a bump, and an IC chip 10 is gang-bonded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and more particularly to a bumped tape carrier having excellent bonding properties for semiconductor elements and a semiconductor device manufactured using the bumped tape carrier.

[Conventional technology]

As a method for manufacturing semiconductor devices by continuous wireless bonding of semiconductor elements such as conventional IC chips,
There is a tape assembly method that combines wireless bonding and continuous tape assembly. This is a method in which a conductor pattern with finger-shaped bumps is formed in the perforated portion of a long polyimide tape, and IC chips and the like are continuously bonded to this pattern, and is used in the above-mentioned tape assembly. Various types of carrier tapes have been proposed (Japanese Patent Laid-Open No. 55-2661).
Publication No. 2, Publication No. 59-143352, 400-12
No. 749, No. 60-88452, No. 61-1
72361).

Here, a typical process for manufacturing a semiconductor device by continuously bonding IC chips using a conventional bumped tape carrier will be described with reference to FIGS. 3 and 4. FIG. 3 is a schematic diagram showing the cross-sectional structure of the bumped tape carrier, and FIG. 4 is a system diagram showing the manufacturing process of the bumped tape carrier. In the figure, a copper foil 4a is laminated with an epoxy adhesive onto a polyimide tape 1 in which a device hole 5 is formed by perforating a long polyimide tape 1 at a position where an IC chip 10 is to be bonded. After that, on the bump forming side of the copper foil 4a,
After coating with photoresist and baking the bump resist pattern 2, a backing agent 9 is coated on the opposite side of the copper foil 4a (FIG. 3(a)).

Next, etching is performed to form a pattern of bumps 7 made of copper foil 4a [FIG. 3(b)]. After removing the bump resist pattern 2 and the backing agent 9,
Next, the copper foil 4a on the opposite side of the bumps 7 is coated with photoresist and the pattern of the finger leads 6 is printed. Note that by coating the copper foil 4a on the side of the bumps 7 with a backing agent and performing etching, and removing the photoresist and the backing agent, the finger leads 6 with the bumps 7 can be formed [FIG. 3(C) )]. Further, the entire surface of the finger lead 6 with the bumps 7 is plated with nickel and then gold plated to obtain a tape carrier with the bumps 7 [Fig. 3(d)]. . In the conventional tape carrier with bumps, the copper fI34a constituting the bump 7 and the copper foil 4a constituting the finger lead 6 are made of the same copper foil, so that the large-young bonding of the IC chip is prevented. At times, since the bumps 7 are hard and difficult to plastically deform, they damage the silicon portion under the aluminum electrodes of the IC chip, often resulting in poor bonding.

[Problem to be solved by the invention]

As mentioned above, when manufacturing a semiconductor device by bonding semiconductor elements such as IC chips using a conventional tape carrier with bumps, it is necessary to make both the bumps and the finger leads made of the same hard material with high mechanical strength. Therefore, when performing gigantic bonding of IC chips, the bumps have a high hardness that makes them difficult to plastically deform, which causes damage to the silicon under the aluminum electrodes of the IC chips, resulting in poor bonding.

An object of the present invention is to solve the above-mentioned problems in the prior art, and to provide a bumped tape carrier provided with bumps having a structure that does not cause bonding defects when bonding semiconductor elements such as IC chips, and a tape carrier manufactured using the bumped tape carrier. The object of the present invention is to provide a semiconductor device with improved performance.

[Means to solve the problem]

In order to achieve the above object of the present invention, the tape carrier with bumps of the present invention includes a metal foil laminated on a tape made of synthetic resin such as polyimide or glass epoxy, and a soft metal foil on the side where bumps are formed. A hard metal foil with high mechanical strength is used on the side where the finger leads are formed, and the two are overlapped to form a double structure.The bumps and finger leads are formed using a photolithography process. By using a bumped tape carrier in which the part constituting the part is made of a metal material that is easily plastically deformed and easily crushed, and the part constituting the finger lead is made of a hard metal material with high mechanical strength, bumps can be easily removed during bonding of IC chips, etc. The parts easily undergo plastic deformation, and good bonding strength can be obtained without damaging the IC chips to be bonded, making it possible to manufacture a highly reliable semiconductor device.

The bump portions constituting the bumped tape carrier of the present invention can be made of copper, aluminum, tin, buttons, etc. of various properties.
Soft metal materials made of metals such as zinc, gold, silver, nickel, or alloys containing these metals as main components can be suitably used.

Furthermore, in the tape carrier with bumps of the present invention, by making the bumps have a perforated or hollow shape, even a somewhat hard metal material can be easily crushed, thereby achieving the object of the present invention. can.

〔Example〕

An embodiment of the present invention will be described below in more detail based on the drawings.

(Example 1) As shown in FIG. 1, a device hole 5 and a sprocket hole (not shown) are punched out in a polyimide tape 1 made of a long polyimide film (glass epoxy film etc. can also be used), and a soft copper foil 3
and two types of copper foils with different hardness made of hard copper 1'i4, such as electrolytic copper foil and rolled copper foil, pure copper foil and copper foil with added impurities, two types of copper foil with different purity, and additive alloys. Using foils etc. made of two different types of copper alloys, these are overlapped and rolled to a predetermined thickness, heat treated (heat treated), and then polyimide is bonded using an epoxy adhesive. The tape 1 is laminated with the soft copper foil 3 on the bump forming side. Subsequently, the bump-forming side is coated with photoresist to form a bump-resist pattern 2, and the hard copper foil 4 on the side opposite to the bump-forming side is coated with a backing agent [FIG. 1(a)]. Next, etching this,
By removing the soft copper foil 3, a pattern of bumps 7 can be formed [FIG. 1(b)]. After removing the bump resist pattern 2 and the backing agent 9, a photoresist is coated on the side of the hard copper foil 4 opposite to the side where the bumps 7 are formed to form a resist pattern of the finger leads 6, and By coating the bump 7 side with a backing agent and performing an etching process, the pattern of the finger leads 6 can be obtained. By removing the resist pattern and the backing agent, the finger leads 6 with the bumps 7 can be obtained. [Figure 1 (C)]. Furthermore, after nickel plating the entire surface of the finger lead 6 with bumps 7, gold plating is applied to the tape carrier 1 with bumps.
1 [Figure 1(d)] is completed.

Bumped tape carrier 11 produced through the above steps
When the IC chip 10 was subjected to gigantic bonding, the bumps 7 caused moderate plastic deformation because they were made of soft copper, and were bonded to high-quality silicon without damaging the silicon under the aluminum electrodes of the IC chip 10. A semiconductor device with good bonding, high product yield, and high reliability was obtained.

(Example 2) In order to perform the process of forming the bumps 7 and the process of forming the finger leads 6 in Example 1 at the same time, - Coat the bump 7 and finger lead 6 with photoresist.
A tape carrier with bumps was produced in the same manner as in Example 1 except that after forming and etching a resist pattern, the resist pattern was removed to form finger leads with bumps.

As a result of performing Guyanese bonding on an IC chip using the bumped tape carrier produced in this example, a semiconductor device having good quality bonding strength similar to that of Example 1 was obtained.

(Example 3) Instead of the soft copper foil 3 used in Example 1, tin foil or solder (Pb-3n, Pb-3n-3b) was used.

A tape carrier with bumps was produced in the same manner as in Example 1 except that a foil (Pb-5n-Cd, Zn-Cd, etc.) was used.

In this example as well, a highly reliable semiconductor device having a high-quality joint similar to that in Example 1 was obtained.

(Example 4) In Example 1, the resist pattern of the bump 7 was changed so that the bump 7 having the hollow hole 11 [FIG. 2(b)] was changed as shown in FIG.
A tape carrier with bumps was produced in the same manner as in Example 1 except that the bumps shown in FIG. 2(a) were formed.

As a result of gigantic bonding of an IC chip using the tape carrier with bumps produced in this example, the hollow holes provided in the bumps 7 were appropriately crushed and plastically deformed.
As in Example 1, a semiconductor device with good bonding properties and high reliability was obtained without damaging the silicon under the aluminum electrode of the IC chip.

〔Effect of the invention〕

As explained in detail above, in the bumped tape carrier of the present invention, the bumps are made of a metal material that is softer than the finger lead portion and has sufficient mechanical strength and hardness. In gigantic bonding of semiconductor devices such as IC chips, the bump portion undergoes appropriate plastic deformation, and no large force is applied to the silicon under the aluminum electrode of the IC chip. A bonding portion can be obtained, and a highly reliable semiconductor device can be manufactured at a high yield.

[BRIEF DESCRIPTION OF THE DRAWINGS] FIGS. 1(a), (b), (c), and (d) are process diagrams showing the steps for manufacturing a tape carrier with bumps in Example 1 of the present invention, and FIG. a) and (b) are schematic diagrams showing the structure of the bumped tape carrier in Example 4, and FIG.
), (b), (c), and (d) are process diagrams showing the manufacturing procedure of a conventional bumped tape carrier, and FIG. 4 is a system diagram showing the manufacturing process of a conventional bumped tape carrier. 1... Polyimide tape 2... Bump resist pattern 3... Soft copper foil 4... Hard copper foil 4a...
・Copper foil 5...Device hole 6...Finger lead 7...Bump 8...Gold plating
9...Backing agent 10...IC chip 11...
・Hollow hole 12...Tape carrier with bump

Claims (1)

[Claims] 1. A semiconductor device by integrally forming bumps and finger leads on one side of a flexible tape-like film base having device holes and sprocket holes, and bonding a semiconductor element to the bump portions. In the bumped tape carrier for manufacturing, the bump portion is made of a soft metal material that is easily plastically deformed, and the finger lead portion is made of a hard metal material with high mechanical strength. carrier. 2. A bumped tape for manufacturing semiconductor devices by integrally forming bumps and finger leads on one side of a flexible tape-like film base with device holes and sprocket holes, and bonding a semiconductor element to the bump portion. A tape carrier with bumps, characterized in that the bump portion of the carrier is formed into a hollow shape that is easily deformed during bonding. 3. In the tape carrier with bumps according to claim 1 or 2, the bump portion is made of metals such as copper, aluminum, tin, lead, zinc, gold, silver, and nickel, and these metals are the main components. 1. A tape carrier with bumps, characterized in that it is made of a soft material made of at least one metal or alloy selected from among alloys. 4. A semiconductor device manufactured by bonding a semiconductor element using the bumped tape carrier according to claims 1 to 3.