JP2006140392A - Tape carrier and manufacturing method thereof, and semiconductor device and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a tape carrier and a manufacturing method thereof wherein the adherability between a wiring pattern (circuit) and a base material is so held that the wiring pattern does not drop off upon manufacture, and the base material can easily be peeled off after the manufacture of a semiconductor device; and to provide the semiconductor device using that tape carrier and a manufacturing method thereof. <P>SOLUTION: In the tape carrier 11, electrically conductive metal foil of three-layer structure (a first copper foil layer 6, a peelable metal layer 7, and a second copper foil layer 8 in this order from the adhesive layer 2 side) is formed in a predetermined pattern 9 on an insulating film 1 provided with perforation holes 4 at predetermined positions via a adhesive layer 2, and a surface treatment layer 10 is formed on the surface thereof. After a semiconductor package is manufactured using this tape carrier 11, the peeling-off is carried out at the portion of the peelable metal layer 7. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention maintains the adhesive force with the base material to such an extent that the wiring pattern (circuit) does not drop during manufacturing, and a tape carrier capable of easily peeling the base material after manufacturing the semiconductor device, and a manufacturing method thereof, and The present invention relates to a semiconductor device using the tape carrier and a manufacturing method thereof.

FIG. 5 shows a typical structure example of a conventional tape carrier.
This tape carrier 29 is provided with a predetermined wiring pattern 27 via an adhesive 22 on an insulating film 21 provided with perforation holes 24 and via holes 25 at predetermined positions. Layer 28 is formed.

FIG. 6 shows a method for manufacturing the tape carrier.
First, an adhesive 22 is bonded to an insulating film 21 typified by a polyimide film to form a base material 23 (a).
Next, after pressing (punching) for forming the perforation holes 24 and the solder ball bonding holes (via holes) 25 (b), the copper foil 26 is bonded (c).
Further, the base material 23 to which the copper foil 26 is bonded is etched by a photoetching method to process the copper foil 26 into a wiring pattern 27. Finally, a surface treatment layer 28 such as gold / nickel plating or tin plating is applied to manufacture a tape carrier 29 (d).

FIG. 7 shows a structural example of a conventional semiconductor device using the tape carrier of FIG.
In this semiconductor device, an IC chip 31 is bonded onto a die pad 30 of a tape carrier 29, an electrode terminal portion 32 of the IC chip 31 and a terminal portion 33 of the tape carrier 29 are bonded by a gold wire 34, and the upper surface of the tape carrier 29 is While the entire portion is sealed with resin 35, a solder ball 36 is joined to the back surface of the tape carrier 29 via the via hole 25 as an external terminal of the package, thereby forming a semiconductor package 37.

FIG. 8 shows a method for manufacturing this semiconductor device.
First, the tape carrier 29 shown in FIG. 5 is used (a), and the IC chip 31 is heat-bonded on the die pad 30 of the tape carrier 29 through a silver paste or the like at a temperature of about 150 ° C. Next, the electrode terminal portion 32 formed on the IC chip 31 and the terminal portion 33 formed on the tape carrier 29 are joined by the gold wire 34 (b).
Further, the entire upper surface of the tape carrier 29 is heated to about 180 ° C. and sealed with the resin 35. Also, solder balls 36 are joined to the back surface of the tape carrier 29 through the via holes 25 to form external terminals of the package, thereby completing the semiconductor package 37 (c).

  However, the semiconductor package 37 manufactured by such a conventional technique has a structure in which the base material 23 (insulating film 21 + adhesive 22) of the tape carrier 29 remains as a part of the package as it is. The minutes get thicker.

  For this reason, recently, only the base material 23 of the tape carrier 29 is peeled off after the assembly of the package to expose the back surface of the terminal portion of the copper foil circuit, and the exposed terminal is used as an external terminal. Attempts have been made to reduce the film thickness.

  However, in such a method, it is not easy to peel only the base material 23 against the adhesive force of the adhesive 22, and even if it is peeled off, 100% of the copper foil circuit is placed on the resin 35 side of the package. It was not something that could be left. That is, the copper foil circuit after the base material 23 is peeled may remain on the resin 35 side or may be peeled off together with the base material 23 to be peeled off.

  On the other hand, in order to improve the peelability, there is also a method of deliberately peeling off the above material after producing a tape carrier using an adhesive having a weak adhesive force. In this case, an etching solution or a gold plating solution at the time of manufacture is also available. Such a wet processing solution such as the liquid penetrates into the adhesive layer, which causes a part of the circuit to drop off, resulting in a decrease in the yield rate of the tape carrier.

In addition, in order to improve the releasability, there is a method in which a material having a weak adhesive force (copper / Ni alloy) is intentionally brought into contact with a substrate to produce a tape carrier, and then the above material is peeled off (for example, Patent Document 1). reference).
JP 2003-78076 A

  However, in the method using such a material having weak adhesive force, the adhesion with the base material becomes insufficient, and the wiring pattern (circuit) may be dropped during the tape carrier manufacturing process.

  Accordingly, the object of the present invention is to maintain the adhesive strength between the base material and the copper foil to such an extent that the wiring pattern (circuit) does not fall off when the tape carrier is manufactured. An object of the present invention is to provide a tape carrier that can be easily peeled and a method for producing the tape carrier.

  Another object of the present invention is to provide a semiconductor device capable of easily peeling a base material and having an ultra-thin structure, and a manufacturing method thereof.

  In order to solve the above problems, the tape carrier of the present invention has a three-layer structure comprising, in order, an insulating film, an adhesive layer, and a first copper foil layer, a peelable metal layer, and a second copper foil layer. The conductive metal foil is formed with a predetermined wiring pattern.

  The adhesion strength of the first copper foil layer and the second copper foil layer through the peelable metal layer is preferably in the range of 10 to 100 N / m.

  It is preferable that the thickness of the first copper foil layer and the second copper foil layer is 0.2 to 40 μm, respectively, and the thickness of the peelable metal layer is 0.01 to 1.0 μm.

  The first copper foil layer and the second copper foil layer are made of pure copper, and the peelable metal layer is a copper alloy or any of nickel, gold, platinum, palladium, rhodium, cobalt, titanium, chromium, and aluminum It is preferably made of a metal or an alloy containing at least one of them.

  It is preferable to form a surface treatment layer on the surface of the conductive metal foil.

  Moreover, the manufacturing method of the tape carrier of this invention makes the base material which bonded the adhesive bond layer to the insulating film the base material, and is a 1st copper foil layer, a peelable metal layer, 2nd in order on the said base material. By forming a copper foil layer, a conductive metal foil having a three-layer structure is bonded to a base material, and the conductive metal foil is processed into a desired pattern by a photoetching method.

  The first copper foil layer, the peelable metal layer, and the second copper foil layer constituting the conductive metal foil may be formed by any method of electrolytic plating, electroless plating, or sputtering. preferable.

  It is preferable to form a wiring pattern by simultaneously etching the first copper foil layer, the peelable metal layer, and the second copper foil layer.

  It is preferable to further apply a surface treatment film to the wiring pattern.

  In the semiconductor device of the present invention, an IC chip is bonded onto a part of the die pad of the copper foil layer formed in a predetermined pattern, and the electrode terminal portion of the IC chip and the terminal portion of the copper foil layer are made of gold. Bonded by a wire, the entire upper surface of the copper foil layer, the IC chip and the gold wire are sealed with a resin, and a surface treatment layer is formed at least in an exposed portion where the copper foil layer is not sealed with a resin It is characterized by being.

  It is preferable that the copper foil layer is made of pure copper and has a thickness of 0.2 to 40 μm.

  Moreover, the manufacturing method of the semiconductor device of this invention makes the base material which bonded the adhesive bond layer to the insulating film the base material, and is a 1st copper foil layer, a peelable metal layer, 2nd in order on the said base material. A conductive metal foil having a three-layer structure is bonded to a base material by forming a copper foil layer, and the conductive metal foil is processed into a desired pattern by a photoetching method to form a tape carrier, An IC chip is bonded onto the die pad of the tape carrier, an electrode terminal portion formed on the IC chip and a terminal portion formed on the second copper foil layer are bonded with a gold wire, and further the upper surface of the tape carrier After the whole part is sealed with resin, a surface treatment layer is formed on the surface of the second copper foil layer exposed by peeling the base material from the whole.

  The adhesion strength between the first copper foil layer and the second copper foil layer through the peelable metal layer is preferably in the range of 10 to 100 N / m.

  It is preferable that the thickness of the first copper foil layer and the second copper foil layer is 0.2 to 40 μm, respectively, and the thickness of the peelable metal layer is 0.01 to 1.0 μm.

  The first copper foil layer, the peelable metal layer, and the second copper foil layer constituting the conductive metal foil may be formed by any method of electrolytic plating, electroless plating, or sputtering. preferable.

  It is preferable to form a wiring pattern by simultaneously etching the first copper foil layer, the peelable metal layer, and the second copper foil layer.

  According to the tape carrier and the manufacturing method thereof of the present invention, the adhesive force between the base material and the copper foil can be firmly maintained to the extent that the wiring pattern (circuit) does not fall off during the tape carrier manufacturing, and the semiconductor device manufacturing Later, the base material can be easily peeled off.

  In addition, according to the semiconductor device and the manufacturing method thereof of the present invention, it is possible to provide a semiconductor device having an ultra-thin structure by easily peeling the base material.

  A feature of the present invention is that a conductive metal having a three-layer structure in which a peelable metal layer exists between two copper foil layers as a metal layer used when forming a wiring pattern (circuit) constituting a tape carrier. The use of foil.

  The copper foil layer side on one side of the conductive metal foil of this three-layer structure is attached to the adhesive layer of the base material. If an appropriate adhesive is selected, the adhesion between the copper foil layer and the adhesive layer is It is firmly held at 500 N / m or more. For this reason, there is a low possibility that a wet processing solution such as an etching solution or a gold plating solution at the time of manufacture penetrates into the interface between the copper foil and the adhesive layer, and the formed circuit can be prevented from falling off.

  Further, when the base material is peeled after the package is produced using the tape carrier having the conductive metal foil having the three-layer structure, the adhesion strength of the two copper foil layers through the peelable metal layer is 10 to 10. The copper foil layer in close contact with the adhesive layer is peeled off together with the base material and the other copper remaining on the package side because it is within the range of 100 N / m and the adhesive strength of this part is the weakest part. The back side of the foil layer will be exposed.

  The thickness of each metal layer in the conductive metal foil having the three-layer structure is about 0.2 to 40 μm for each of the two copper foil layers, and 0.01 to 1 for the peelable metal layer sandwiched between them. It is preferable that the thickness is 0.0 μm.

  Since the first copper foil layer on the side to be in close contact with the adhesive layer needs to maintain an adhesive force and mechanical strength so that the chemical solution does not penetrate into the interface between the copper foil layer and the adhesive layer, at least, The thickness is preferably about 0.2 μm. The other second copper foil layer desirably has a thickness as a conductor layer of a general tape carrier, that is, about 9 to 40 μm in order to form a circuit of the package.

  Moreover, since a peelable metal layer is a layer which exists for the purpose of peeling two copper foil layers, it is necessary to adjust to a thickness that can achieve the purpose. That is, if it is too thin, the peeling effect is weakened, and the adhesion between the two copper foil layers is increased. When it is too thick, the peeling effect becomes strong, and the adhesion between the two copper foil layers becomes weak. When the tape carrier is set to a range of adhesion strength of about 10 to 100 N / m, no problem occurs when the tape carrier is produced (that is, the pattern does not fall off due to the chemical solution soaking into the peelable metal layer). The thickness may be adjusted to about 01 to 1.0 μm. If it is less than 0.01 μm, the effect as the peelable metal layer becomes insufficient, and if it exceeds 1.0 μm, the etching rate of the first and second copper foil layers and the etching rate of the peelable metal layer are different. The etching property will be affected.

  Each metal layer may be either a wet process such as electrolytic plating or electroless plating, or a dry process such as sputtering. As the material, the two copper foil layers are pure copper, and the peelable metal layer is a copper alloy or any one of nickel, gold, platinum, palladium, rhodium, cobalt, titanium, chromium, and aluminum, or at least one of them. Examples include alloys containing more than one type.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
FIG. 1 shows an embodiment of the tape carrier of the present invention.
The tape carrier 11 has a three-layered conductive metal foil (from the adhesive layer 2 side in order from the adhesive layer 2 side) on the insulating film 1 provided with the perforation holes 4 at predetermined positions via the adhesive layer 2. The copper foil layer 6, the peelable metal layer 7, and the second copper foil layer 8) are formed with a predetermined wiring pattern 9, and the surface treatment layer 10 is formed on the surface thereof.

FIG. 2 shows a method for manufacturing the tape carrier.
A polyimide film is used as the insulating film 1 for the tape carrier, and an X type manufactured by Yodogawa Paper Mill, which is a general adhesive for TAB, is used as the adhesive layer 2, and the adhesive layer 2 is bonded to the insulating film 1 as a base. Let it be material 3 (a).
Next, the base material 3 is pressed (punched) to form the perforation holes 4 (b).
Furthermore, in order from the adhesive layer 2 side, a first copper foil layer 6, a peelable metal layer 7, and a second copper foil layer 8 are provided to form a conductive metal foil 5 having a three-layer structure (c) ).
Thereafter, the three layers are processed into a wiring pattern (circuit) 9 by a photoetching method, and finally, the surface treatment layer 10 is formed by performing electroless gold / nickel plating, thereby completing the tape carrier 11 (d ).

FIG. 3 shows a structural example of a semiconductor device manufactured using the tape carrier of FIG.
This semiconductor device is a part of the second copper foil layer 8 (surface treatment layer 18 is formed on the exposed surface and surface treatment layer 10 is formed on the other surface) formed in a predetermined pattern. The IC chip 13 is bonded onto the die pad 12, the electrode terminal portion 14 of the IC chip 13 and the terminal portion 15 of the second copper foil layer 8 are bonded together by the gold wire 16, and the upper surface of the second copper foil layer 8 is The entire part, the IC chip 13 and the gold wire 16 are sealed with a resin 17 to form a semiconductor package 19. The surface treatment layer 18 serves as an external terminal of the package.

FIG. 4 shows a method for manufacturing this semiconductor device.
First, the tape carrier 11 shown in FIG. 1 is used (a), and the IC chip 13 is bonded to the die pad 12 of the tape carrier 11 using silver paste at 150 ° C. for 1 hour. Next, the electrode terminal portion 14 formed on the IC chip 13 and the terminal portion 15 formed on the second copper foil layer 8 are made of gold at a temperature of 150 ° C. using an ultrasonic thermocompression type wire bonder. It joins with the wire 16 (b).
Next, the entire upper surface of the tape carrier 11 is sealed with a resin 17, and the resin 17 is cured at 180 ° C. for 1 hour (c).
Thereafter, the base material (insulating film 1 + adhesive layer 2) and the first copper foil layer 6 that is in close contact with the adhesive layer 2 are peeled off from the whole to thereby form a package portion formed thereon. To separate. As a result, the back surface of the second copper foil layer 8 left on the package side is exposed. Further, electroless gold / nickel plating is applied to this portion to form a surface treatment layer 18 to serve as external terminals of the package. Then, the semiconductor package 19 is completed (d).

According to this embodiment, the following effects can be obtained.
(1) Since the tape carrier 11 can be produced by the same method as that for a normal tape carrier, it is easy to manufacture the existing infrastructure.
(2) There is no permeation of the wet processing solution (etching solution or gold plating solution) when the tape carrier 11 is manufactured, and the processing operation is easy.
(3) When the tape carrier 11 is manufactured, the adhesive strength between the insulating film 1 and the conductive metal foil having a three-layer structure can be firmly maintained, so that the wiring pattern 9 does not fall off.
(4) After the assembly of the package, the first copper foil layer 6 that is in close contact with the insulating film 1, the adhesive layer 2, and the adhesive layer 2 by the peelable metal layer 7 between the two copper foil layers is collectively Easy to peel off.
(5) By peeling the insulating film 1 and the adhesive layer 2, it is possible to provide an ultra-thin semiconductor package 19.
(6) Solder ball joining from the back surface of the tape carrier is not required, and therefore the punching process by pressing can be omitted, so that the die cost can be reduced.

  As shown in FIG. 1, the conductive metal layer for circuit formation is composed of three copper foil layers 6 and 8 and a peelable metal layer 7 sandwiched between them. A package is produced by the same method when used (Example) and when a single-layer copper foil 26 having a general thickness as shown in FIG. 5 is used (conventional example). When the portion and the base material were peeled off, the transfer rate of the wiring pattern to the package resin side was evaluated. The evaluation results are shown in Table 1.

From the results of Table 1, in the examples, all peeled in the vicinity of the peelable metal layer, and the transfer rate to the sealing resin side (package side) achieved 100%. The adhesion strength was about 35 N / m.
On the other hand, in the case of the conventional example, since the adhesion strength was about 600 N / m, the transfer to the sealing resin side was only about half. From this, the effect by this invention has been proved.

It is sectional drawing which shows the tape carrier of this embodiment. It is sectional drawing explaining the manufacturing method of the tape carrier of this embodiment. It is sectional drawing which shows the semiconductor device (semiconductor package) of this embodiment. It is sectional drawing explaining the manufacturing method of the semiconductor device (semiconductor package) of this embodiment. It is sectional drawing which shows the conventional tape carrier. It is sectional drawing explaining the manufacturing method of the conventional tape carrier. It is sectional drawing which shows the conventional semiconductor device (semiconductor package). It is sectional drawing explaining the manufacturing method of the conventional semiconductor device (semiconductor package).

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Insulating film 2 Adhesive layer 3 Base material 4 Perforation hole 5 Metal foil 6 First copper foil layer 7 Peelable metal layer 8 Second copper foil layer 9 Wiring pattern 10 Surface treatment layer 11 Tape carrier 12 Die pad 13 IC chip DESCRIPTION OF SYMBOLS 14 Electrode terminal part 15 Terminal part 16 Gold wire 17 Resin 18 Surface treatment layer 19 Semiconductor package 21 Insulating film 22 Adhesive 23 Base material 24 Perforation hole 25 Via hole 26 Copper foil 27 Wiring pattern 28 Surface treatment layer 29 Tape carrier 30 Die pad 31 IC Chip 32 Electrode terminal portion 33 Terminal portion 34 Gold wire 35 Resin 36 Solder ball 37 Semiconductor package

Claims (16)

  A conductive metal foil having a three-layer structure including a first copper foil layer, a peelable metal layer, and a second copper foil layer is formed in a predetermined wiring pattern in order on the insulating film via an adhesive layer. A tape carrier characterized by   The tape carrier according to claim 1, wherein the adhesion strength of the first copper foil layer and the second copper foil layer through the peelable metal layer is in the range of 10 to 100 N / m.   The thicknesses of the first copper foil layer and the second copper foil layer are 0.2 to 40 μm, respectively, and the thickness of the peelable metal layer is 0.01 to 1.0 μm. Item 1. The tape carrier according to Item 1.   The first copper foil layer and the second copper foil layer are made of pure copper, and the peelable metal layer is a copper alloy or any of nickel, gold, platinum, palladium, rhodium, cobalt, titanium, chromium, and aluminum 2. The tape carrier according to claim 1, comprising a metal or an alloy containing at least one of them.   2. The tape carrier according to claim 1, wherein a surface treatment layer is formed on the surface of the conductive metal foil.   A base material obtained by bonding an adhesive layer to an insulating film is used as a base material, and a first copper foil layer, a peelable metal layer, and a second copper foil layer are formed on the base material in this order to form a three-layer structure. A method for manufacturing a tape carrier, comprising: bonding a conductive metal foil made of a base material to a base material, and further processing the wiring pattern into a desired shape by a photoetching method.   The first copper foil layer, the peelable metal layer, and the second copper foil layer constituting the conductive metal foil are formed by any one of an electrolytic plating method, an electroless plating method, or a sputtering method. The method for producing a tape carrier according to claim 6.   The method for manufacturing a tape carrier according to claim 6, wherein the wiring pattern is formed by simultaneously etching the first copper foil layer, the peelable metal layer, and the second copper foil layer.   The tape carrier manufacturing method according to claim 6, wherein a surface treatment film is further applied to the wiring pattern.   An IC chip is bonded onto a part of the die pad of the copper foil layer formed in a predetermined pattern, and the electrode terminal portion of the IC chip and the terminal portion of the copper foil layer are bonded by a gold wire, and the copper foil layer A semiconductor device, wherein an entire upper surface portion, the IC chip and the gold wire are sealed with resin, and a surface treatment layer is formed at least in an exposed portion where the copper foil layer is not sealed with resin.   The semiconductor device according to claim 10, wherein the copper foil layer is made of pure copper and has a thickness of 0.2 to 40 μm. A base material obtained by bonding an adhesive layer to an insulating film is used as a base material, and a first copper foil layer, a peelable metal layer, and a second copper foil layer are formed on the base material in this order to form a three-layer structure. Bonding a conductive metal foil made of a base material, and further processing the wiring pattern into a desired shape by photoetching to form a tape carrier,
An IC chip is bonded onto the die pad of the tape carrier, an electrode terminal portion formed on the IC chip and a terminal portion formed on the second copper foil layer are bonded with a gold wire, and further the tape carrier A method for manufacturing a semiconductor device, comprising: forming a surface treatment layer on a surface of a second copper foil layer exposed by peeling the base material from the whole after sealing the entire upper surface portion with a resin.   13. The method of manufacturing a semiconductor device according to claim 12, wherein the adhesion strength between the first copper foil layer and the second copper foil layer through the peelable metal layer is in a range of 10 to 100 N / m. .   The thicknesses of the first copper foil layer and the second copper foil layer are 0.2 to 40 μm, respectively, and the thickness of the peelable metal layer is 0.01 to 1.0 μm. Item 13. A method for manufacturing a semiconductor device according to Item 12.   13. The first copper foil layer, the peelable metal layer, and the second copper foil layer are formed by any one of an electrolytic plating method, an electroless plating method, and a sputtering method. The manufacturing method of the semiconductor device of description.   13. The method of manufacturing a semiconductor device according to claim 12, wherein a wiring pattern is formed by simultaneously etching the first copper foil layer, the peelable metal layer, and the second copper foil layer.

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