JPH0312458B2 - - Google Patents

Info

Publication number
JPH0312458B2
JPH0312458B2 JP56215649A JP21564981A JPH0312458B2 JP H0312458 B2 JPH0312458 B2 JP H0312458B2 JP 56215649 A JP56215649 A JP 56215649A JP 21564981 A JP21564981 A JP 21564981A JP H0312458 B2 JPH0312458 B2 JP H0312458B2
Authority
JP
Japan
Prior art keywords
region
substrate
semiconductor substrate
conductivity type
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56215649A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58111369A (ja
Inventor
Masami Yamaoka
Masaharu Toyoshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP56215649A priority Critical patent/JPS58111369A/ja
Priority to EP82111854A priority patent/EP0083060B2/en
Priority to DE8282111854T priority patent/DE3276091D1/de
Publication of JPS58111369A publication Critical patent/JPS58111369A/ja
Priority to US07/407,157 priority patent/US5596217A/en
Publication of JPH0312458B2 publication Critical patent/JPH0312458B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP56215649A 1981-12-24 1981-12-24 半導体装置 Granted JPS58111369A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56215649A JPS58111369A (ja) 1981-12-24 1981-12-24 半導体装置
EP82111854A EP0083060B2 (en) 1981-12-24 1982-12-21 Semiconductor device including overvoltage protection diode
DE8282111854T DE3276091D1 (en) 1981-12-24 1982-12-21 Semiconductor device including overvoltage protection diode
US07/407,157 US5596217A (en) 1981-12-24 1989-09-14 Semiconductor device including overvoltage protection diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56215649A JPS58111369A (ja) 1981-12-24 1981-12-24 半導体装置

Publications (2)

Publication Number Publication Date
JPS58111369A JPS58111369A (ja) 1983-07-02
JPH0312458B2 true JPH0312458B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-02-20

Family

ID=16675895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56215649A Granted JPS58111369A (ja) 1981-12-24 1981-12-24 半導体装置

Country Status (1)

Country Link
JP (1) JPS58111369A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60160665A (ja) * 1984-01-31 1985-08-22 Nec Kansai Ltd 半導体装置
JPS61123549U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1985-01-22 1986-08-04
US5475245A (en) * 1992-03-23 1995-12-12 Rohm Co., Ltd. Field-effect voltage regulator diode

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS573225B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-08-19 1982-01-20
JPS5556656A (en) * 1978-10-23 1980-04-25 Nec Corp Semiconductor device
JPS5580352A (en) * 1978-12-12 1980-06-17 Fuji Electric Co Ltd Transistor with high breakdown voltage

Also Published As

Publication number Publication date
JPS58111369A (ja) 1983-07-02

Similar Documents

Publication Publication Date Title
JP2642904B2 (ja) 入出力端子での静電気放電に対してｍｏｓ集積回路を保護する装置
JPH0563949B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US4660065A (en) Hall effect device with surface potential shielding layer
JPS61158177A (ja) 半導体装置
US4829344A (en) Electronic semiconductor device for protecting integrated circuits against electrostatic discharges
JP2601143B2 (ja) 半導体装置
JPH0420262B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0312458B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6146972B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH02110976A (ja) 絶縁ゲート型半導体装置
JPH01214055A (ja) 静電破壊保護装置
JPS61502087A (ja) モノリシツクに集積されたプレ−ナ半導体装置およびその製造方法
JP4907341B2 (ja) サイリスタ
JPS584829B2 (ja) 半導体集積回路
US6777748B1 (en) Bi-directional semiconductor component
JPS59158567A (ja) 定電圧ダイオ−ドを含む半導体装置
JPS60218878A (ja) 半導体集積回路
JPS6326551B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH04256370A (ja) 半導体装置
JPH0387072A (ja) 半導体装置
JPS61289667A (ja) 半導体装置およびその製造方法
JPH0697467A (ja) 半導体素子
JPH045862A (ja) 半導体入出力保護回路
JPH03108773A (ja) 半導体装置
JPH05308127A (ja) パワートランジスタ装置