JPH03116852A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH03116852A
JPH03116852A JP25435489A JP25435489A JPH03116852A JP H03116852 A JPH03116852 A JP H03116852A JP 25435489 A JP25435489 A JP 25435489A JP 25435489 A JP25435489 A JP 25435489A JP H03116852 A JPH03116852 A JP H03116852A
Authority
JP
Japan
Prior art keywords
layer
contact hole
insulating film
conductive layer
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25435489A
Other languages
Japanese (ja)
Inventor
Noboru Hirakawa
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP25435489A priority Critical patent/JPH03116852A/en
Publication of JPH03116852A publication Critical patent/JPH03116852A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To make semiconductor device of this design high in component density by a method wherein a lower wiring layer is composed of a first conductive layer in contact with a lower conductive layer at a first contact hole, a pad layer filled in the first contact hole, and a second conductive layer formed covering the first conductive layer and the pad layer.
CONSTITUTION: A field insulating film 102 and a diffusion layer 103 are formed on a semiconductor substrate 1, an insulating film 104 is formed thereon, and a contact hole 105 is provided through a photoetching method. A tungsten silicide layer 106a is formed through a sputtering method, and a silicon dioxide film 107a is formed as thick as required. Then, a silicon dioxide film 107 is left unremoved only inside the contact hole through a whole area etching, and an Al layer 108a is formed. Then, the substrate is patterned through a photoetching method to form an Al wiring layer 108 and a tungsten silicide layer 106. Thereafter, an insulating film 109 is provided, then a contact hole 110 is bored, and an Al wiring layer 111 is formed. By this setup, a contact connection can be made small enough in resistance.
COPYRIGHT: (C)1991,JPO&Japio
JP25435489A 1989-09-29 1989-09-29 Semiconductor device Pending JPH03116852A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25435489A JPH03116852A (en) 1989-09-29 1989-09-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25435489A JPH03116852A (en) 1989-09-29 1989-09-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH03116852A true JPH03116852A (en) 1991-05-17

Family

ID=17263829

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25435489A Pending JPH03116852A (en) 1989-09-29 1989-09-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH03116852A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04280457A (en) * 1991-03-08 1992-10-06 Nkk Corp Semiconductor device and its manufacture
KR100320898B1 (en) * 1998-01-29 2002-02-04 가네꼬 히사시 Method of forming photoresist pattern

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5911647A (en) * 1982-07-12 1984-01-21 Nec Corp Semiconductor device and manufacture thereof
JPS6213050A (en) * 1985-07-10 1987-01-21 Matsushita Electronics Corp Manufacture of semiconductor device
JPS62118543A (en) * 1985-11-18 1987-05-29 Nec Corp Semiconductor integrated circuit device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5911647A (en) * 1982-07-12 1984-01-21 Nec Corp Semiconductor device and manufacture thereof
JPS6213050A (en) * 1985-07-10 1987-01-21 Matsushita Electronics Corp Manufacture of semiconductor device
JPS62118543A (en) * 1985-11-18 1987-05-29 Nec Corp Semiconductor integrated circuit device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04280457A (en) * 1991-03-08 1992-10-06 Nkk Corp Semiconductor device and its manufacture
KR100320898B1 (en) * 1998-01-29 2002-02-04 가네꼬 히사시 Method of forming photoresist pattern
US6348418B1 (en) 1998-01-29 2002-02-19 Nec Corporation Method of forming photoresist pattern

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