JPH03105959A - Lead frame for semiconductor device use - Google Patents
Lead frame for semiconductor device useInfo
- Publication number
- JPH03105959A JPH03105959A JP24418789A JP24418789A JPH03105959A JP H03105959 A JPH03105959 A JP H03105959A JP 24418789 A JP24418789 A JP 24418789A JP 24418789 A JP24418789 A JP 24418789A JP H03105959 A JPH03105959 A JP H03105959A
- Authority
- JP
- Japan
- Prior art keywords
- lead
- resin
- suspension
- frame
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 229920005989 resin Polymers 0.000 claims abstract description 43
- 239000011347 resin Substances 0.000 claims abstract description 43
- 239000000725 suspension Substances 0.000 claims abstract description 43
- 238000007789 sealing Methods 0.000 claims description 9
- 238000005520 cutting process Methods 0.000 abstract description 11
- 230000007547 defect Effects 0.000 abstract description 6
- 239000012535 impurity Substances 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 3
- 238000000465 moulding Methods 0.000 abstract description 2
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 238000010008 shearing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- WABPQHHGFIMREM-AKLPVKDBSA-N lead-210 Chemical compound [210Pb] WABPQHHGFIMREM-AKLPVKDBSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置用リードフレームに関し、特に信頼
性と作業性に優れた樹脂封止型半導体装置用リードフレ
ームの構造に関スる。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a lead frame for a semiconductor device, and particularly to a structure of a resin-sealed lead frame for a semiconductor device that is excellent in reliability and workability.
従来、樹脂封止型半導体装置に用いられるリードフレー
ムは、第3図(a)のように1枚の金属板を打ち抜きあ
るいはエッチング加工することにより、多遮りードフレ
ーム31として形戒されている。各単位は略中夫に位置
する素子搭載部32と、この素子搭載部32を周囲位置
のフレーム部36に支持させる吊りリード33と、素子
搭載部32を包囲するように配置した複数本の外部導出
用リード34と、これら外部導出用リード34を連結し
て樹脂封止時に樹脂が外方へ流出するのを防止するタイ
パー35とで構或されている。Conventionally, a lead frame used in a resin-sealed semiconductor device is formed into a multi-blocking frame 31 by punching or etching a single metal plate as shown in FIG. 3(a). . Each unit includes an element mounting part 32 located approximately in the middle, a suspension lead 33 for supporting the element mounting part 32 on a frame part 36 at a peripheral position, and a plurality of external leads arranged so as to surround the element mounting part 32. It is composed of lead-out leads 34 and a tieper 35 that connects these lead-out leads 34 to prevent the resin from flowing outward during resin sealing.
そして従来の樹脂封止型半導体装置は第3図(b)に示
したように、上記素子搭載部32に半導体素子37を銀
ペースト等のろう材(図示せず)で固着し、かつ上記半
導体素子37のボンディングパッドと外部導出用リード
34とを金属細線38で接続した後に、これらをモール
ド樹脂39等で封止していた。In the conventional resin-sealed semiconductor device, as shown in FIG. 3(b), a semiconductor element 37 is fixed to the element mounting portion 32 with a brazing material (not shown) such as silver paste, and After the bonding pad of the element 37 and the external lead 34 were connected with a thin metal wire 38, they were sealed with a molding resin 39 or the like.
更に、封止後にはタイパー35を切除し、封止部から露
出しているリードフレームに錫や半田等のメッキを施し
た上で、吊りリード33や外部導出用リード34等をフ
レーム部36から切り離し、かつ外部導出用リード34
を所定形状に或形することで半導体装置として完或して
いる。Furthermore, after sealing, the tieper 35 is cut out, the lead frame exposed from the sealing part is plated with tin, solder, etc., and the hanging leads 33, external leads 34, etc. are removed from the frame part 36. Lead 34 for separation and external extraction
By shaping it into a predetermined shape, it is completed as a semiconductor device.
上述した従来の半導体装置用リードフレームは、吊りリ
ード33に所要の支持強度が得られるように、その幅も
しくは断面積を大きく設ける必要がある。またそのため
吊りリード33とフレーム部36とを切り離す工程では
、過大な剪断応力を吊りリード33の端部に加えねばな
らず、第3図(c)の部分拡大図に示すように、吊りリ
ード33とモールド樹脂39との接着界面にしばしば破
壊が生じている。以上述べた吊りリードの界面面積が大
きいことと、その界面に生じた破壊とが相俟って、水分
やイオン性不純物の侵入を容易にし、素子の配線層を形
戊するアルミニウムの腐食や断線不良の原因の1つさえ
なっている。The conventional lead frame for a semiconductor device described above needs to have a large width or cross-sectional area so that the suspension lead 33 can have the required support strength. Further, in the process of separating the suspension lead 33 and the frame portion 36, an excessive shearing stress must be applied to the end of the suspension lead 33, and as shown in the partially enlarged view of FIG. Breakage often occurs at the adhesive interface between the mold resin 39 and the mold resin 39. The above-mentioned large interface area of the hanging lead, combined with the damage that occurs at the interface, makes it easy for moisture and ionic impurities to enter, leading to corrosion and disconnection of the aluminum that forms the wiring layer of the device. It is even one of the causes of defects.
このため、吊りリード33の幅を小さく設け、界面面積
並びに界面破壊を低減する試みがなされたが、この場合
には、吊りリードの支持強度が不足しているため、樹脂
封止後の各工程におけるハンドリング時に吊P)リード
が切断してしまい、後の工程で支障を生じることになる
。For this reason, attempts have been made to reduce the interfacial area and interface breakage by reducing the width of the suspension lead 33, but in this case, because the support strength of the suspension lead is insufficient, each step after resin sealing During handling, the hanging lead may break, causing problems in subsequent steps.
また、さらに上記強度不足を補うために、第4図(a)
〜(C)に示したようなフック形の補助吊りリード41
0を設ける試みがなされているが、上述の欠点を解消で
きる代わりに新しい欠点が生じるという問題を抱えてい
る。この場合、フック形の補助吊りリードは吊りリード
切断後にモールド樹脂49中に埋め込まれる形となり、
また吊りリード切断時にはモールド樹脂自体のみが剪断
の際に発生する引張り応力に耐えねばならないことにな
る。半導体素子サイズが小さく、補助吊りリードのシー
ルバスを十分に確保できる場合は上記引張り応力に対し
モールド樹脂も十分耐えられるが、最先端メモリーのよ
うに半導体素子サイズが非常に大きく、シールパスもほ
とんど確保できない場合には、第4図(C)に示したよ
うに、フック形の補助吊りリード410のフック部より
樹脂クラックが発生してしまうという新たな欠点が生じ
ている。In addition, in order to further compensate for the above-mentioned lack of strength, Fig. 4(a)
-Hook-shaped auxiliary hanging lead 41 as shown in (C)
Attempts have been made to provide a value of 0, but instead of solving the above-mentioned drawbacks, new drawbacks arise. In this case, the hook-shaped auxiliary suspension lead is embedded in the mold resin 49 after cutting the suspension lead,
Furthermore, when the suspension lead is cut, only the mold resin itself must withstand the tensile stress generated during shearing. If the semiconductor element size is small and a sufficient sealing path can be secured for the auxiliary suspension lead, the mold resin can withstand the above tensile stress, but if the semiconductor element size is extremely large, such as in cutting-edge memory, the sealing path is almost guaranteed. If this is not possible, a new drawback arises in that resin cracks occur at the hook portion of the hook-shaped auxiliary hanging lead 410, as shown in FIG. 4(C).
本発明の目的は、吊りリードと樹脂界面を通しての水分
やイオン性不純物の侵入による半導体素子の腐食や断線
不良を防止でき、また樹脂パッケージを強固に支持する
ことで工程でのハンドリング不良を防止すると共に、吊
りリードの切断工程における補助吊りリード引張りによ
る樹脂へのダメージを解消でき、また更に樹脂内部応力
を低減できる半導体装置用リードフレームを提供するこ
とにある。The purpose of the present invention is to prevent corrosion and disconnection of semiconductor elements due to the intrusion of moisture and ionic impurities through the suspension lead and resin interface, and to prevent handling defects in the process by firmly supporting the resin package. Another object of the present invention is to provide a lead frame for a semiconductor device that can eliminate damage to the resin due to tensioning of the auxiliary suspension leads in the process of cutting the suspension leads, and further reduce the internal stress of the resin.
本発明の半導体装置用リードフレームは、素子搭載部を
直接支持する吊りリードの少なくともフレーム部と樹脂
封止外側面との間に相当する部位の断面を小さく形成す
ると共に、上記吊りリードに隣接する位置に、少なくと
も1本の樹脂封止部に到達する長さでかつ樹脂からの引
き抜き強度が樹脂強度に干渉されない形状を有する補助
吊りリードをフレーム部に突設した構戊としている。In the lead frame for a semiconductor device of the present invention, at least a portion of the suspension lead that directly supports an element mounting portion corresponding to a portion between the frame portion and the resin-sealed outer surface is formed to have a small cross section, and a portion adjacent to the suspension lead is formed to have a small cross section. The frame part is provided with an auxiliary hanging lead having a length that reaches at least one resin sealing part and a shape in which the strength of pulling out from the resin does not interfere with the strength of the resin.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図(a)は本発明の一実施例の上面図であり、第1
図(b)はそのリードフレームを用いて形成した半導体
装置の上面図、第1図(c)は第1図(b)の{一℃′
線における断面図である。FIG. 1(a) is a top view of one embodiment of the present invention.
Figure 1(b) is a top view of a semiconductor device formed using the lead frame, and Figure 1(c) is a top view of the semiconductor device formed using the lead frame.
FIG.
図示のように、リードフレーム11は1枚の金属板を打
ち抜きあるいはエッチング加工により多連リードフレー
ムとして形成されている。各単位は略中央に位置する素
子搭載部l2とこの素子搭載部12を周囲位置のフレー
ム部16に支持させる吊りリード13と、素子搭載部1
2を包囲するように配置した複数本の外部導出用リード
14と、これら外部導出用リード14を連結して樹脂封
止時に樹脂が外方へ流出するのを防止するタイパー15
を備えている。As shown in the figure, the lead frame 11 is formed as a multiple lead frame by punching or etching a single metal plate. Each unit includes an element mounting part l2 located approximately in the center, a hanging lead 13 for supporting this element mounting part 12 on a frame part 16 at a peripheral position, and an element mounting part 1.
2, and a tieper 15 that connects these external leads 14 to prevent the resin from flowing outward during resin sealing.
It is equipped with
そして前記吊りリード13はフレーム部16から素子搭
載部12に向かう所要の長さに亘る部位13aの幅を小
さく設け、その界面面積な低減している。またこの吊り
リードエ3に隣接する位置にはフレーム部16から素子
搭載部12に向かって突出形戊した引き抜き形補助吊り
リード110を形成している。この補助吊りリードは少
なくともその先端がモールド樹脂l9にて封止される部
分に到達する長さに設定してあり、更にその形状は吊り
ビン切断工程において容易に引き抜けるように、引き抜
き方向と平行に形成してある。この場合、引き抜き時に
樹脂にかかる応力は樹脂と吊りリードの接着強度に依存
するものであり、フックを設けた場合のような樹脂バル
ク自体にかかる応力は皆無となる。本実施例のリードフ
レームを用いた半導体装置では、第1図(b)及び(c
)に示すように、吊りビン切断時に引き抜き形補助吊り
リード110はモールド樹脂19に大きなストレスを与
えることなく、容易に引き抜かれ、引き抜き跡111を
残すのみとなる。従って吊りリードを細く形成した部位
I3aにて樹脂との界面面積を低減し、かつ切断時のス
トレスなも低減することで水分や不純物の侵入を抑制で
き、半導体素子の配線腐食,断線不良を防止できる。The suspension lead 13 has a portion 13a having a small width over a required length from the frame portion 16 to the element mounting portion 12, thereby reducing the interface area. Further, a pull-out auxiliary suspension lead 110 is formed at a position adjacent to the suspension lead 3 so as to protrude from the frame portion 16 toward the element mounting portion 12 . The length of this auxiliary hanging lead is set so that at least its tip reaches the part sealed with mold resin 19, and its shape is parallel to the pulling direction so that it can be easily pulled out in the hanging bottle cutting process. It has been formed. In this case, the stress applied to the resin during pulling out depends on the adhesive strength between the resin and the suspension lead, and there is no stress applied to the resin bulk itself, unlike when a hook is provided. In the semiconductor device using the lead frame of this example, FIGS.
), when cutting the hanging bottle, the pull-out type auxiliary hanging lead 110 is easily pulled out without applying large stress to the molded resin 19, leaving only a pulling mark 111. Therefore, by reducing the interface area with the resin at the part I3a where the hanging lead is formed thin, and also reducing the stress during cutting, it is possible to suppress the intrusion of moisture and impurities, and prevent wiring corrosion and disconnection defects in semiconductor elements. can.
またさらに、吊りリードを細くしたことによるハンドリ
ング時の吊りビン切断による不具合は引き抜き形補助吊
りリードで解消され、かつ上記補助吊りリードを設けた
ことで吊りビン切断工程での樹脂自体に与える弓張りス
トレスも皆無となる。Furthermore, problems caused by cutting the hanging bottle during handling due to the thinning of the hanging lead can be solved by using the pull-out type auxiliary hanging lead, and by providing the above-mentioned auxiliary hanging lead, bow tension is applied to the resin itself during the hanging bottle cutting process. There will be no stress at all.
更に補助吊りリードが樹脂内に残存しないということは
、樹脂の内部応力を低減する効果も併せ持ち、信頼性を
高めることができる。Furthermore, the fact that the auxiliary suspension lead does not remain in the resin also has the effect of reducing the internal stress of the resin, which can improve reliability.
〆第2図(a)は本発明の他の実施例の上面図であり、
第2図(b)はそのリードフレームを用いて形成した半
導体装置の上面図、第2図(c)は第2図(b)のm−
m’線における断面図である。〆FIG. 2(a) is a top view of another embodiment of the present invention,
FIG. 2(b) is a top view of a semiconductor device formed using the lead frame, and FIG. 2(c) is a top view of a semiconductor device formed using the lead frame.
It is a sectional view taken along m' line.
第2の実施例では、引き抜き形補助吊りリード210は
抜きテーバーを設けた形状としてあり、吊りリード23
切断時においてさらに引き抜きを容易にし、ストレスの
低減を図っている。In the second embodiment, the retractable auxiliary suspension lead 210 has a shape with a retractable taber, and the suspension lead 23
It also makes it easier to pull out when cutting, reducing stress.
なお更に引き抜きを容易にするために、樹脂との密着性
の悪い被膜(例えば金,銀,ニッケルメッキ,シリコー
ン樹脂膜等)を上記補助吊りリードの樹脂との接触面に
設けてやれば一層効果的である。Furthermore, in order to make it easier to pull out, it will be even more effective if a coating with poor adhesion to the resin (for example, gold, silver, nickel plating, silicone resin film, etc.) is provided on the contact surface of the auxiliary suspension lead with the resin. It is true.
以上説明したように本発明は、素子搭載部を直接支持す
る吊りリードの一部の断面を小さく形戊すると共に、こ
の吊りリードに隣接する位置に吊りピン切断工程におい
て容易に引き抜ける形状を有する補助吊りリードをフレ
ーム部に突設1〜たことで、吊りリードと樹脂界面な通
しての水分やイオン性不純物の侵入による半導体素子の
腐食や断線不良を防止でき、また樹脂パッケージを強固
に支持することで工程でのハンドリング不良を防止する
と共に、吊りリード切断工程における補助吊りリード引
張りによる樹脂へのダメージを解消でき、また更に補助
吊りリードが樹脂中に残存しないために樹脂内部応力の
低減できるなど様々な効果を有している。As explained above, the present invention involves reducing the cross section of a part of the suspension lead that directly supports the element mounting portion, and also attaching an auxiliary pin adjacent to the suspension lead that has a shape that can be easily pulled out during the suspension pin cutting process. By protruding the suspension leads from the frame, it is possible to prevent corrosion of semiconductor elements and disconnection defects due to the intrusion of moisture and ionic impurities through the interface between the suspension leads and the resin, and also to firmly support the resin package. This prevents handling defects during the process, eliminates damage to the resin due to the tension of the auxiliary suspension lead during the suspension lead cutting process, and also reduces internal stress in the resin because the auxiliary suspension lead does not remain in the resin. It has various effects.
第1図(a)は本発明の一実施例の上面図、第1図(b
)はそのリードフレームを用いた半導体装置の上面図、
第1図(c)は第1図(b)の1一l′線断面図、第2
図(a)は木発明の実施例2の上面図、第2図(b)は
そのリードフレームを用いた半導体装置の」二面図、第
2図(c)はm−m’線断面図、第3図(a) , (
b) , (c)及び第4図(a) , (b) ,
(c)はそれぞれ従来の半導体装置用リードフレームと
それを用いた半導体装置の上面図及び断面図である。
11,21,31.41・・・・・・リードフレーム、
12,22,32.42・・・・・・素子搭載部、13
,2 3, 3 3. 4 3=−=−吊りリード
、13a,23a,43a・・・・・・吊りビンを細く
した部位、14,24,34.44・・・・・・外部導
出用リード、15,25,35,45・・・・・・タイ
パー 16.26,36.46・・・・・・フレーム部
、17,27.37,47・・・・・・半導体素子、1
8,28,38.48・・・・・・金属細線、19,2
9,39.49・・・・・・モールド樹脂、110,2
10・・・・・・引き抜き形補助吊りリード、111,
211・・・・・・引き抜き跡、410・・・・・・フ
ック形補助吊りリード、411・・・・・・樹脂クラッ
ク。FIG. 1(a) is a top view of an embodiment of the present invention, and FIG. 1(b) is a top view of an embodiment of the present invention.
) is a top view of a semiconductor device using the lead frame,
Figure 1(c) is a cross-sectional view taken along the line 1-l' in Figure 1(b);
FIG. 2(a) is a top view of Embodiment 2 of the wooden invention, FIG. 2(b) is a two-sided view of a semiconductor device using the lead frame, and FIG. 2(c) is a sectional view taken along the line m-m'. , Fig. 3(a) , (
b), (c) and Figure 4 (a), (b),
(c) is a top view and a cross-sectional view of a conventional lead frame for a semiconductor device and a semiconductor device using the same, respectively. 11, 21, 31. 41...Lead frame,
12, 22, 32. 42...Element mounting section, 13
, 2 3, 3 3. 4 3=-=-Hanging lead, 13a, 23a, 43a... Thin part of hanging bottle, 14, 24, 34.44... External lead-out lead, 15, 25, 35 , 45... Typer 16.26, 36.46... Frame portion, 17, 27.37, 47... Semiconductor element, 1
8,28,38.48・・・Thin metal wire, 19,2
9,39.49...Mold resin, 110,2
10...Pull-out type auxiliary hanging lead, 111,
211... Pull-out marks, 410... Hook-shaped auxiliary hanging lead, 411... Resin cracks.
Claims (1)
、かつ前記素子搭載部を含む領域を樹脂封止してなる半
導体装置用リードフレームにおいて、前記吊りリードは
少なくともフレーム部と樹脂封止外側面との間に相当す
る部位の断面を吊りリードの他の部分の断面より小さく
形成すると共に、上記吊りリードに隣接する位置に少な
くとも1本以上の樹脂封止部に到達する長さを有し、か
つ樹脂からの引き抜き強度が樹脂強度の干渉を受けない
形状とした補助吊りリードをフレーム部に突設したこと
を特徴とする半導体装置用リードフレーム。In a lead frame for a semiconductor device in which an element mounting part is supported by a frame part using a hanging lead and a region including the element mounting part is sealed with resin, the hanging lead covers at least the frame part and the resin-sealed outer surface. The cross section of the portion corresponding to the suspension lead is formed to be smaller than the cross section of the other portion of the suspension lead, and the suspension lead has a length that reaches at least one resin sealing portion at a position adjacent to the suspension lead, A lead frame for a semiconductor device, characterized in that an auxiliary suspension lead is provided protruding from the frame portion and whose pull-out strength from the resin is shaped so that it is not interfered with by the strength of the resin.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1244187A JP2536184B2 (en) | 1989-09-19 | 1989-09-19 | Lead frame for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1244187A JP2536184B2 (en) | 1989-09-19 | 1989-09-19 | Lead frame for semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH03105959A true JPH03105959A (en) | 1991-05-02 |
JP2536184B2 JP2536184B2 (en) | 1996-09-18 |
Family
ID=17115067
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1244187A Expired - Lifetime JP2536184B2 (en) | 1989-09-19 | 1989-09-19 | Lead frame for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2536184B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8525307B2 (en) | 2010-07-27 | 2013-09-03 | Panasonic Corporation | Semiconductor device, lead frame assembly, and method for fabricating the same |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6357415B2 (en) | 2014-12-26 | 2018-07-11 | ルネサスエレクトロニクス株式会社 | Manufacturing method of semiconductor device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62128164A (en) * | 1985-11-29 | 1987-06-10 | Nec Corp | Lead frame of semiconductor device |
JPS6362366A (en) * | 1986-09-03 | 1988-03-18 | Matsushita Electronics Corp | Lead frame |
JPS6481256A (en) * | 1987-09-24 | 1989-03-27 | Hitachi Ltd | Lead frame and manufacture of semiconductor device using said lead frame |
-
1989
- 1989-09-19 JP JP1244187A patent/JP2536184B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62128164A (en) * | 1985-11-29 | 1987-06-10 | Nec Corp | Lead frame of semiconductor device |
JPS6362366A (en) * | 1986-09-03 | 1988-03-18 | Matsushita Electronics Corp | Lead frame |
JPS6481256A (en) * | 1987-09-24 | 1989-03-27 | Hitachi Ltd | Lead frame and manufacture of semiconductor device using said lead frame |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8525307B2 (en) | 2010-07-27 | 2013-09-03 | Panasonic Corporation | Semiconductor device, lead frame assembly, and method for fabricating the same |
Also Published As
Publication number | Publication date |
---|---|
JP2536184B2 (en) | 1996-09-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5468993A (en) | Semiconductor device with polygonal shaped die pad | |
US9363901B2 (en) | Making a plurality of integrated circuit packages | |
JPH1012773A (en) | Resin-sealed semiconductor device and its manufacture | |
JPH11317488A (en) | Semiconductor device, lead frame for the semiconductor device, and manufacture thereof | |
JP2663897B2 (en) | Lead frame and manufacturing method thereof | |
JPH03105959A (en) | Lead frame for semiconductor device use | |
JP3614738B2 (en) | Resin-sealed semiconductor device | |
JPS6124261A (en) | Lead frame | |
JPH06342816A (en) | Semiconductor device, its manufacture, and lead frame used therefor | |
JP4570797B2 (en) | Manufacturing method of semiconductor device | |
JP3229816B2 (en) | Method for manufacturing resin-encapsulated semiconductor device | |
JP2714335B2 (en) | Semiconductor device | |
JP2954297B2 (en) | Resin-sealed semiconductor device | |
JPS61237458A (en) | Resin-sealed type semiconductor device | |
JPS60136248A (en) | Manufacture of lead frame | |
US10847449B2 (en) | Lead frame with selective patterned plating | |
JPH10154784A (en) | Manufacture of lead frame | |
JPH053277A (en) | Semiconductor device | |
JP2919415B2 (en) | Lead frame | |
JPH05251619A (en) | Resin seal semiconductor device and manufacture thereof | |
JP3296339B2 (en) | Lead frame and semiconductor device | |
JP3644555B2 (en) | Lead frame and semiconductor device | |
JP2564595B2 (en) | Method for manufacturing semiconductor device | |
KR200142844Y1 (en) | Lead frame | |
JPS61218150A (en) | Semiconductor device, lead frame used therefor and manufacture thereof |