JPH0298130A - Vacuum treatment device - Google Patents

Abstract

PURPOSE:To improve the result of ashing or etching by a method wherein a transfer mechanism for supporting a substrate is provided and the substrate is subjected to ashing or etching while being transferred. CONSTITUTION:A substrate 3 is supported by a transfer mechanism 6 having a plurality of rollers 6a to be rotated. The rollers 6a are arranged in one row in a space over a cathode electrode 2 and move the substrate 3 in the direction shown by an arrow from their left end toward their right end. In this case, the substrate 3 is never standstilled at a position over the center of the electrode 2 and is stopped at the right end. Plasma which is generated by discharge, which is caused between the electrode 2 and an anode electrode 4, is prevented from being diffused in the whole region in a vacuum tank 1 by the substrate 3. Thereby, the density of the plasma becomes high in a space between the electrode 2 and the substrate 3, plasma ions and plasma radicals cause a chemical reaction with the substrate 3 and the substrate 3 is subjected to ashing or etching in a state that the surface of the substrate 3 is good.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a vacuum processing apparatus for ashing or etching a substrate using plasma generated within a vacuum chamber.

(Prior Art) In a conventional vacuum processing apparatus of this type, as shown in FIG. 5, a cathode electrode 2 and a stationary substrate 3 are arranged in a vacuum chamber 1 so as to face each other at a distance. has been done. Further, in the space between the cathode electrode 2 and the substrate 3, a ring-shaped anode electrode 4 is arranged. Note that 5 is a high frequency power source applied to the cathode electrode 2.

In the above-mentioned apparatus, the plasma generated by the discharge occurring between the cathode electrode 2 and the anode electrode 4 is prevented from diffusing into the metal area in the vacuum chamber I by the substrate 3, so that the density of the plasma is lower than that of the cathode electrode 2. The ions and radicals in the high-density plasma cause a chemical reaction with the material of the substrate 3, resulting in ashing or etching of the surface of the substrate 3. .

(Problems to be Solved by the Invention) In the conventional vacuum processing apparatus, the stationary substrate 3 is arranged to face the cathode electrode 2 as described above, so the area of the cathode electrode 2 is reduced by the area of the stationary substrate 3. The area needed to be equal to or larger than that of

Therefore, as the substrate 3 has become larger in size in recent years, the cathode electrode 2 must also have a larger area.

However, when the cathode electrode 2 has a large area, problems such as unstable discharge and poor ashing or etching on the surface of the substrate 3 arise.

The present invention solves the problems of the conventional methods as described above, and improves the state of 7' etching or etching on the surface of the substrate without increasing the area of the electrode even if the area of the substrate becomes large. The purpose is to provide a vacuum processing apparatus that can perform

(Means for Solving the Problems) In order to achieve the above object, the present invention provides a vacuum processing apparatus configured as described above, in which the substrate is supported by a transport mechanism instead of ashing or etching a stationary substrate. This method is characterized in that ashing or etching is performed while the substrate is being transported by this transport mechanism.

(Function) In this invention, since the substrate is transported by the transport mechanism, the diffusion of plasma is hindered by the substrate being transported, and the surface of the substrate is ashed or etched by ions and radicals in the plasma. .

(Example) Hereinafter, an example of the present invention will be described with reference to the drawings.

1, 2, and 3 show an embodiment of the present invention, and in these figures, the same reference numerals as in FIG. 5, which shows a conventional device, indicate the same or equivalent parts as in FIG. Although the description thereof will be omitted, the substrate 3 is supported from below and transported by the transport mechanism 6. The transport mechanism 6 includes a plurality of rollers 6a rotated by a drive machine (not shown), and the plurality of rollers 6a are connected to the cathode electrode 2.
They are arranged horizontally in a row in the space above.

Therefore, when the substrate 3 is transported by the transport mechanism 6, first, the substrate 3 at the position shown in FIG. 1 before transport starts to be transported in the direction shown by the arrow in the figure. Then, as shown in FIG. 2, the substrate 3 does not stop at a position above the cathode electrode 2, but continues to be transported in the direction indicated by the arrow in the figure. Then, the substrate 3 stops at the position shown in FIG.

Therefore, the plasma generated by the discharge that occurs between the cathode electrode 2 and the anode electrode 4 is transferred to the cathode electrode 2.
By the substrate 3 that continues to be transported above the
Diffusion throughout the vacuum chamber 1 is prevented, and the density of the plasma increases in the space between the cathode electrode 2 and the substrate 3. Then, the ions and radicals in the high-density plasma cause a chemical reaction with the material of the substrate 3 that continues to be transported, and the surface of the substrate 3 is ashed or etched. That is, the substrate 3 is ashed or etched while being transported.

Although the above embodiment shows the case where one substrate is transported, it is not limited to the case of transporting a substrate in 1-), but is also applicable to ashing or etching while continuously transporting a plurality of substrates as shown in FIG. You may. In addition, a roller 6 is provided in the conveyance mechanism 6.
Instead of using a, a belt, chain, etc. may be used. Furthermore, instead of supporting the substrate 3 from below with the transport mechanism 6,
The substrate 3 may be transported by being suspended from above by the transport mechanism 6.

(Effects of the Invention) In this invention, as described above, the substrate is supported by the transport mechanism, and ashing or etching is carried out while the substrate is transported by the transport mechanism, so even if the area of the substrate becomes large, the electrodes can be It becomes possible to improve the ashing or etching condition on the surface of the substrate without increasing the area.

[Brief explanation of the drawing]

1 to 3 show embodiments of this invention, and the first
The figure is an explanatory diagram when the substrate is in a position before being transported, FIG. 2 is an explanatory diagram when the substrate is being transported, and FIG. 3 is an explanatory diagram when the substrate is in a state after being transported. FIG. 4 is an explanatory diagram of another embodiment of the present invention when a plurality of substrates are transported. FIG. 5 is an explanatory diagram showing a conventional vacuum processing apparatus. In the figure, (1)...Vacuum chamber 2...Cathode electrode, substrate, transport mechanism 6a...Roller In the figure, the same reference numerals indicate the same or corresponding parts.

Claims (1)

[Claims] In a vacuum processing apparatus in which an electrode and a substrate are arranged at a distance in a vacuum chamber, and the substrate is ashed or etched by plasma generated in the vacuum chamber, the substrate is supported by a transport mechanism, and the substrate is A vacuum processing apparatus characterized by performing ashing or etching while transporting.