JPH0297684A - Production of thin oxide film superconductor - Google Patents
Production of thin oxide film superconductorInfo
- Publication number
- JPH0297684A JPH0297684A JP63249203A JP24920388A JPH0297684A JP H0297684 A JPH0297684 A JP H0297684A JP 63249203 A JP63249203 A JP 63249203A JP 24920388 A JP24920388 A JP 24920388A JP H0297684 A JPH0297684 A JP H0297684A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- superconductor
- heat treatment
- substrate
- film superconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000010409 thin film Substances 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 229910052788 barium Inorganic materials 0.000 claims abstract description 5
- 229910052737 gold Inorganic materials 0.000 claims abstract description 5
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 5
- 229910052716 thallium Inorganic materials 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 229910052802 copper Inorganic materials 0.000 claims abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 4
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 4
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 9
- 239000011575 calcium Substances 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract 1
- 150000001342 alkaline earth metals Chemical class 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 10
- 230000007704 transition Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000750 Niobium-germanium Inorganic materials 0.000 description 2
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- RTRWPDUMRZBWHZ-UHFFFAOYSA-N germanium niobium Chemical compound [Ge].[Nb] RTRWPDUMRZBWHZ-UHFFFAOYSA-N 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Other Surface Treatments For Metallic Materials (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は酸化物薄膜超電導体の製造方法および加工方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing and processing an oxide thin film superconductor.
従来の技術
高温超電導体として、Ａ１５型２元系化合物として窒化
ニオブ（ＮｂＮ）やゲルマニウムニオブ（ＮｂＧｅ）な
どが知られていたが、これらの材料の超電導転移温度は
たかだか２４゛にであった。Niobium nitride (NbN) and niobium germanium (NbGe) are known as A15 type binary compounds as conventional high temperature superconductors, but the superconducting transition temperature of these materials is at most 24°.
一方、ペロブスカイト系３元化合物は、さらに高い転移
温度が期待され＊ Ｂａ−Ｌａ−Ｃｕ−０系の高温超
電導体が提案された［Ｊ、Ｇ、Ｂｅｄｎｏｒｚ ａｎｄ
Ｋ 、Ａ 、Ｍｕ Ｉ Ｉｅｒ ＋ツァイト シュリフ
ト フェア フィジーク（Ｚｅｉｔｓｈｒｌｆｔ ｆｕ
ｒ Ｐｈｙｓｉｋ Ｂ） −Ｃｏｎｄｅｎｓｅｄ Ｍａ
ｔｔｅｒ ６４． １８９−１９３ （１９８Ｇ））
コ。On the other hand, perovskite-based ternary compounds are expected to have even higher transition temperatures.* Ba-La-Cu-0-based high-temperature superconductors have been proposed [J, G, Bednorz and
K, A, Mu I Ier + Zeitshrlft fu.
r Physik B) -Condensed Ma
ter 64. 189-193 (198G))
Ko.
そして＊ Ｙ −Ｂ ａ Ｃｕ −０系がより高い
超電導転移温度を持つ材料であることが、提案された。And it was proposed that the *Y-B a Cu-0 system is a material with a higher superconducting transition temperature.
文献［Ｍ 、Ｋ 、Ｗｕ等、フィジカル レビュー レ
ターズ（Ｐｈｙｓｉｃａｌ Ｒｅｖｌｅｗ Ｌｅｔｔｅ
ｒｓ） Ｖｏｌ、５８． Ｎｏ、９．９０８−９１０
（１９８７）コ。さらに最近、これらの材料より超、電
導転移温度を示す材料として＋ Ｔ ｌ −Ｂ ａ−
Ｃａ−Ｃｕ−０系が提案された。文献［Ｚ、Ｚ、Ｓｈｅ
ｎｇ ａｎｄ Ａ、Ｍ、Ｈｅｒｍａｎｎ、ネイチ＋ −
（Ｎａｔｕｒｅ） Ｖｏｌ。Literature [M., K., Wu et al., Physical Review Letters
rs) Vol, 58. No, 9.908-910
(1987) Ko. Furthermore, recently, + T l -B a - has been developed as a material that exhibits a conductive transition temperature higher than that of these materials.
The Ca-Cu-0 system was proposed. Literature [Z, Z, She
ng and A, M, Hermann, Neich + -
(Nature) Vol.
３３２．１３８ （＋９８１１）） コ。332.138 (+9811)) Ko.
この挿の材料の超電導機構の詳細は明かではないが、転
移温度が液体窒素温度以上に高くなる可能性があり、高
温超電導体として従来の２元系化合物より、より有益か
つ効果的な特性が期待される。The details of the superconducting mechanism of this superconducting material are not clear, but the transition temperature may be higher than that of liquid nitrogen, making it more useful and effective as a high-temperature superconductor than conventional binary compounds. Be expected.
発明が解決しようとする課題
しかしながら＋ Ｔｌ−Ｂａ−Ｃａ−Ｃｕ−０系の材
料は、ＴＩの蒸気圧が異常に高いため熱処理工程が非常
に難しいものであった。従ってこの種の材料で再現性良
く超電導特性を得ることが課題となっていた。Problems to be Solved by the Invention However, + Tl-Ba-Ca-Cu-0 type materials have an extremely difficult heat treatment process due to the abnormally high vapor pressure of TI. Therefore, it has been a challenge to obtain superconducting properties with good reproducibility using this type of material.
また現在の技術では焼結という過程でしか形成できない
ため、セラミックの粉末あるいはブロックの形吠でしか
得られない。一方、この種の材料を実用化する場合、薄
膜状に加工することが強く要望されているが、従来の技
術では、薄膜化は非常に困難とされている。Furthermore, with current technology, it can only be formed through the process of sintering, so it can only be obtained in the form of ceramic powder or blocks. On the other hand, when this type of material is to be put to practical use, there is a strong demand for processing it into a thin film, but with conventional techniques, it is considered very difficult to process the material into a thin film.
本発明者らは、この種の材料の薄膜がイオンプロセスに
より付着させると、薄膜状の高温超電導体が形成される
ことを発見し、これにもとづいて好適な形成過程有する
超電導体を製造方法提供することを目的としている。The present inventors have discovered that when a thin film of this kind of material is deposited by an ion process, a thin film-like high temperature superconductor is formed, and based on this, they provide a method for manufacturing a superconductor having a suitable formation process. It is intended to.
課題を解決するための手段
本発明の酸化物薄膜超電導体の製造方法は、基体上に主
体成分に少なくともタリウム（Ｔｌ）。Means for Solving the Problems The method for producing an oxide thin film superconductor of the present invention includes at least thallium (Tl) as a main component on a substrate.
銅（Ｃｕ ） ＋ アルカリ土類（ＩＩａ族）、酸素
（０）を含み、アルカリ土類がカルシウム（Ｃａ）とス
トロンチウム（Ｓｒ、）もしくはバリウム（Ｂ ａ）の
少なくとも一方からなる薄膜を付着させ、さらに金（Ａ
ｕ）もしくは白金（Ｐｔ）の金属膜を前記薄膜上にコー
ティングし、熱処理することを特徴とするものである。Depositing a thin film containing copper (Cu) + alkaline earth (group IIa) and oxygen (0), where the alkaline earth is composed of calcium (Ca) and at least one of strontium (Sr) or barium (Ba), Furthermore, gold (A
u) Or a metal film of platinum (Pt) is coated on the thin film and heat treated.
作用
本発明者らは、上記方法の形成工程を行うことにより、
再現性よ＜ＴＩを含む酸化物薄膜超電導体を作製できる
ことを発見した。Effect The present inventors achieved the following by performing the forming step of the above method.
We have discovered that it is possible to fabricate oxide thin film superconductors containing TI with high reproducibility.
すなわち、主体成分が少なくともＴＬＣｕ＊０＋ Ｃ
ａとＳｒもしくはＢａの少なくとも一方から成る薄膜を
、基体上に付着させ、その上にＡｕもしくはｐｔ膜をコ
ーティングして、熱処理することにより、蒸気圧が高く
蒸発しやすいＴＩがＴＩを含む薄膜から逃げることを防
ぎ、併せて、結晶化させるので高品質なＴＩ系薄膜超電
導体を得易いという特徴を持つ。That is, the main component is at least TLCu*0+C
By depositing a thin film consisting of a and at least one of Sr or Ba on a substrate, coating it with an Au or PT film, and heat-treating it, TI, which has a high vapor pressure and easily evaporates, is removed from the thin film containing TI. It prevents escape and also causes crystallization, making it easy to obtain high-quality TI-based thin film superconductors.
以下本発明の内容をさらに深く理解されるために、具体
的な実施例を示す。In order to further understand the content of the present invention, specific examples will be shown below.
実施例
第１図に本発明による酸化物薄膜超電導体の製造工程を
示す。EXAMPLE FIG. 1 shows the manufacturing process of an oxide thin film superconductor according to the present invention.
高周波プレナーマグネトロンスパッタにより。By high frequency planar magnetron sputtering.
ＴＩ−Ｃａ−Ｈａ−Ｃｕ−０薄膜１１を酸化マグネシウ
ム単結晶（１００）基体１２上に約１μｍ堆積させた（
ａ）。A TI-Ca-Ha-Cu-0 thin film 11 was deposited to a thickness of about 1 μm on a magnesium oxide single crystal (100) substrate 12 (
a).
この場合、ターゲットは９組成比がＴｌ：Ｂａ：Ｃａ：
Ｃｕ＝２： ｌ： ２： ３になるように１Ｔ１２
０３＋ ＢａＣＯ３、ＣａＣ０ａ ＋ ＣｕＯを秤量し
・混合し、９００℃。In this case, the target has a composition ratio of 9 Tl:Ba:Ca:
1T12 so that Cu=2: l: 2: 3
03+ BaCO3, CaC0a + CuO were weighed and mixed, and heated to 900°C.
８時間焼成し作製したものを用いた。スパッタガスはＡ
ｒ ： ０２＝ １ ： Ｌ ガス圧力０． ５
Ｐａ。The one prepared by firing for 8 hours was used. Sputter gas is A
r: 02=1: L Gas pressure 0. 5
Pa.
高周波電力ｉｏｏｗ、 基体温度２００℃とした。The high frequency power ioow and the substrate temperature were 200°C.
この結果、膜の組成比はＴＩ： Ｂａ： Ｃａ： Ｃ
ｕ＝２： ２： ２： ３であった。As a result, the composition ratio of the film was TI: Ba: Ca: C
u=2:2:2:3.
このようにして堆積した薄膜上に、真空上着法により約
０．２μｍのｐｔ膜１３をコーティングした（ｂ）。さ
らに、このＴｌ−Ｃａ−Ｂａ−Ｃｕ−０薄膜１１に酸素
雰囲気中で９００℃、３０分間の熱処理を施した。熱処
理後、Ｐｔ膜１３に、実施例１に示した熱処理工程を施
した。熱処理後ｐｔ膜１３にマスクを用いＡｒイオンビ
ームで電極１４をパターン出しして（ｃ ） ＊ Ｔ
ｌ−Ｃａ−Ｂａ−Ｃｕ−０薄膜１１の温度による抵抗の
変化を測定した結果、第２図に本発明の実施例によって
得られたＴｌ−Ｃａ−Ｂａ−Ｃｕ−０薄膜１１の抵抗の
温度変化１５とＰｔ膜１３をコートせずに熱処理した時
のＴｌ−Ｃａ−Ｂａ−Ｃｕ−０薄膜の抵抗の温度変化１
６を示す。Ｐｔ膜でコーティングした場合、Ｔｌ−Ｃａ
−Ｂａ−Ｃｕ−０薄膜ゼロ抵抗温度は１２０にの良好な
超電導特性が得られた。On the thin film thus deposited, a PT film 13 of about 0.2 μm was coated by a vacuum coating method (b). Further, this Tl-Ca-Ba-Cu-0 thin film 11 was subjected to heat treatment at 900° C. for 30 minutes in an oxygen atmosphere. After the heat treatment, the Pt film 13 was subjected to the heat treatment process shown in Example 1. After heat treatment, the electrode 14 is patterned with an Ar ion beam using a mask on the PT film 13 (c) *T
As a result of measuring the change in resistance of the Tl-Ca-Ba-Cu-0 thin film 11 due to temperature, FIG. Change 15 and temperature change 1 in resistance of Tl-Ca-Ba-Cu-0 thin film when heat treated without coating Pt film 13
6 is shown. When coated with Pt film, Tl-Ca
-Ba-Cu-0 thin film had a zero resistance temperature of 120, and good superconducting properties were obtained.
なお９本発明者らは本発明の実施例において。Note that 9 the present inventors have described in Examples of the present invention.
熱処理時間が１分から１時間が良好な超電導特性を得る
に適していることを確認した。It was confirmed that the heat treatment time was 1 minute to 1 hour suitable for obtaining good superconducting properties.
さらに１本発明者らは、上記熱処理工程を行う前のＴｌ
−Ｃａ−Ｂａ−Ｃｕ−０薄膜１１の元素のモル比率がＩ
の範囲にあれば１本発明の製造工程により超電導特性に
差がないことを確認した。Furthermore, the present inventors discovered that Tl before performing the above heat treatment step.
It was confirmed that if the molar ratio of the elements in the -Ca-Ba-Cu-0 thin film 11 is within the range of I, there is no difference in superconducting properties depending on the manufacturing process of the present invention.
ここでＡはＳｒもしくはＢａａ
なお、本実施例におけるＴｌ−Ｃａ−Ｂａ−Ｃｕ−０薄
膜１１の形成は実施例１の形成法に限るものではない。Here, A is Sr or Baa. Note that the formation of the Tl-Ca-Ba-Cu-0 thin film 11 in this example is not limited to the formation method of Example 1.
Ｘ線回折測定によってもＴｌ−Ｃａ−Ｂａ−Ｃｕ−０薄
膜１１の結晶性の劣化は認められず、薄膜１１の表面へ
の金属膜１３のエツチング残りもなかった。Even by X-ray diffraction measurement, no deterioration of the crystallinity of the Tl-Ca-Ba-Cu-0 thin film 11 was observed, and no etching residue of the metal film 13 was found on the surface of the thin film 11.
発明の効果
本発明の酸化物薄膜超電導体の製造方法によると、臨界
温度の高いＴ Ｌ Ｃａｔ Ｃｕｌ Ｂ ａ （
もしくはＳｒ）を含む酸化物薄膜超電導体が良好にしか
も再現性良く得ることができる。従って９本発明の工業
的価値は高い。Effects of the Invention According to the method for producing an oxide thin film superconductor of the present invention, T L Cat Cul Ba (
or Sr) can be obtained satisfactorily and with good reproducibility. Therefore, the industrial value of the present invention is high.
第１図は本発明の実施例における酸化物薄膜超電導体の
製造工程の様子を示す概略図、第２図はＴ ｌ−Ｃａ−
Ｂａ−Ｃｕ−０薄膜超電導体の抵抗の温度変化を示す図
である。
１１ ＊ ＠ ＊ Ｔｌ−Ｃａ−Ｂａ−Ｃｕ−０薄膜、
１２＊ｅ＊基体、１３・・・金属膜、 １４・ ・・電
極、 １５争・・Ｔ １−Ｃａ−Ｈａ−Ｃｕ−０薄膜の
抵抗の温度変化。
代理人の氏名 弁理士 粟野重孝 ほか１名１ 図
第２図
ＯＯ
温 崖 （Ｋ）FIG. 1 is a schematic diagram showing the manufacturing process of an oxide thin film superconductor in an example of the present invention, and FIG. 2 is a T l-Ca-
It is a figure showing the temperature change of the resistance of Ba-Cu-0 thin film superconductor. 11 * @ * Tl-Ca-Ba-Cu-0 thin film,
12*e*Substrate, 13...Metal film, 14...Electrode, 15...T Temperature change in resistance of T1-Ca-Ha-Cu-0 thin film. Name of agent: Patent attorney Shigetaka Awano and 1 other person 1 Figure 2 OO On Gai (K)
Claims (3)
、銅（Ｃｕ）、アルカリ土類（IIａ族）、酸素（Ｏ）を
含み、アルカリ土類がカルシウム（Ｃａ）とストロンチ
ウム（Ｓｒ）もしくはバリウム（Ｂａ）の少なくとも一
方からなる薄膜を付着させ、さらに金（Ａｕ）もしくは
白金（Ｐｔ）の金属膜を前記薄膜上にコーティングし、
熱処理することを特徴とする酸化物薄膜超電導体の製造
方法。(1) At least thallium (Tl) as the main component on the substrate
, a thin film containing copper (Cu), alkaline earth (group IIa), and oxygen (O), in which the alkaline earth is composed of calcium (Ca) and at least one of strontium (Sr) or barium (Ba), and Coating a metal film of gold (Au) or platinum (Pt) on the thin film,
A method for producing an oxide thin film superconductor, the method comprising heat treatment.
載の酸化物薄膜超電導体の製造方法。 ここでＡはＳｒもしくはＢａ。 （３）熱処理の温度を８５０〜９５０℃としたことを特
徴とする特許請求の範囲第１項記載の酸化物薄膜超電導
体の製造方法。3.0≦(Ca+A+Cu)/Tl≦10. The method for producing an oxide thin film superconductor according to claim 1, wherein Here, A is Sr or Ba. (3) The method for producing an oxide thin film superconductor according to claim 1, wherein the heat treatment temperature is 850 to 950°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63249203A JPH0297684A (en) | 1988-10-03 | 1988-10-03 | Production of thin oxide film superconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63249203A JPH0297684A (en) | 1988-10-03 | 1988-10-03 | Production of thin oxide film superconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0297684A true JPH0297684A (en) | 1990-04-10 |
Family
ID=17189445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63249203A Pending JPH0297684A (en) | 1988-10-03 | 1988-10-03 | Production of thin oxide film superconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0297684A (en) |
-
1988
- 1988-10-03 JP JP63249203A patent/JPH0297684A/en active Pending
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