JPH01105416A - Manufacture of thin film superconductor - Google Patents
Manufacture of thin film superconductorInfo
- Publication number
- JPH01105416A JPH01105416A JP62262060A JP26206087A JPH01105416A JP H01105416 A JPH01105416 A JP H01105416A JP 62262060 A JP62262060 A JP 62262060A JP 26206087 A JP26206087 A JP 26206087A JP H01105416 A JPH01105416 A JP H01105416A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- thin film
- substrate
- superconductor
- composite compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 31
- 239000010409 thin film Substances 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 150000001875 compounds Chemical class 0.000 claims abstract description 18
- 239000001301 oxygen Substances 0.000 claims abstract description 17
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000002131 composite material Substances 0.000 claims abstract description 12
- 239000010408 film Substances 0.000 claims abstract description 12
- -1 oxygen ions Chemical class 0.000 claims abstract description 10
- 230000007704 transition Effects 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims abstract description 6
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000002425 crystallisation Methods 0.000 claims abstract description 4
- 230000008025 crystallization Effects 0.000 claims abstract description 4
- 229910052802 copper Inorganic materials 0.000 claims abstract description 3
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 238000007740 vapor deposition Methods 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000000137 annealing Methods 0.000 abstract description 4
- 229910052790 beryllium Inorganic materials 0.000 abstract description 2
- 229910052791 calcium Inorganic materials 0.000 abstract description 2
- 229910052749 magnesium Inorganic materials 0.000 abstract description 2
- 229910052706 scandium Inorganic materials 0.000 abstract description 2
- 229910052712 strontium Inorganic materials 0.000 abstract description 2
- 229910052727 yttrium Inorganic materials 0.000 abstract description 2
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 abstract 1
- 229910052788 barium Inorganic materials 0.000 abstract 1
- 229910052747 lanthanoid Inorganic materials 0.000 abstract 1
- 150000002602 lanthanoids Chemical class 0.000 abstract 1
- 239000000463 material Substances 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002603 lanthanum Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000750 Niobium-germanium Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- RTRWPDUMRZBWHZ-UHFFFAOYSA-N germanium niobium Chemical compound [Ge].[Nb] RTRWPDUMRZBWHZ-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000011882 ultra-fine particle Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は超電導体の製造方法に関するものである。特に
化合物薄膜超電導体の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing superconductors. In particular, it relates to a method for manufacturing compound thin film superconductors.
従来の技術
高温超電導体として、Ａ１５型２元系化合物として窒化
ニオブ（ＮｂＮ）やゲルマニウムニオブ（Ｎ ｂ ｓ
Ｇ ｅ ）などが知られていたが、これらの材料の超電
導転移温度はたかだか２４°にであった。一方、ペロブ
スカイト系３元化合物は、さらに高い転移温度が期待さ
れ、Ｂａ−Ｌａ−Ｃｕ−０系の高温超電導体が提案され
た［ Ｊ、 Ｇ、 Ｂｅｎｄ。Conventional technology As high-temperature superconductors, niobium nitride (NbN) and germanium niobium (N b s ) are used as A15 type binary compounds.
G e ), etc. were known, but the superconducting transition temperature of these materials was at most 24°. On the other hand, perovskite-based ternary compounds are expected to have even higher transition temperatures, and Ba-La-Cu-0-based high-temperature superconductors have been proposed [J, G, Bend.
ｒｚ ａｎｄ Ｋ、Ａ、Ｍｕｌｌｅｒ、 ツアイト シ
コリフト フェアフィジーク（Ｚｅ ｔｓｈｒｉｆｔ
ｆ ｌｉ ｒｐｈｙｓｉｋ Ｂ）−Ｃｏｎｄｅｎｓｅｄ
Ｍａｔｔｅｒ ６４．１８９−１９３ （１９８６）
］。さらに、］Ｙ−Ｂａ−Ｃｕ−０がより高温の超電
導材料であることが、最近提案された。（文献） ［
Ｍ、 Ｋ、 Ｗｕ等。rz and K, A, Muller, Zetshrift Fair Physique
f li rphysik B)-Condensed
Matter 64.189-193 (1986)
]. Additionally, ]Y-Ba-Cu-0 was recently proposed to be a higher temperature superconducting material. (Reference) [
M., K., Wu et al.
フィジカルレビュー レターズ（Ｐｈｙｓｉｃａｌ Ｒ
ｅｖｉｅｗ Ｌｅｔｔｅｒｓ） Ｖｏｌ、５８ Ｎｏ９
．９０８−９１０ （１９８７） ］］Ｙ−Ｂａ−Ｃｕ
−０の材料の超電導機構の詳細は明らかではないが、転
移温度が液体窒素温度以上に高くなる可能性があり、高
温超電導体として従来の２元系化合物より、より有望な
特性が期待される。Physical Review Letters (Physical R
(view Letters) Vol, 58 No9
．． 908-910 (1987) ]]Y-Ba-Cu
The details of the superconducting mechanism of -0 materials are not clear, but the transition temperature may be higher than liquid nitrogen temperature, and it is expected to have more promising properties as a high-temperature superconductor than conventional binary compounds. .
発明が解決しようとする問題点
しかしながら、Ｙ−Ｂａ−Ｃｕ−０系の材料は、現在の
技術では焼結という過程でしか形成できないため、セラ
ミックの粉末あるいはブロックの形状でしか得られない
。一方、この種の材料を実用化する場合、薄膜状に加工
することが強く要望されている。従来の技術では、スパ
ッタ法で蒸着し、形成された薄膜をさらに９００〜１０
００℃で酸素中の熱処理を施して超電導特性を実現して
いた。一方、薄膜をエレクトロニクス素子で実用化する
には、さらに５００〜６００℃以下の低温で形成するこ
とが要請されているが、低温に困難とされていた。Problems to be Solved by the Invention However, Y-Ba-Cu-0 based materials can only be formed through the process of sintering using current technology, and therefore can only be obtained in the form of ceramic powder or blocks. On the other hand, when this type of material is put to practical use, there is a strong demand for processing it into a thin film. In the conventional technique, the thin film is deposited by sputtering, and the formed thin film is further heated to 900 to 10
Superconducting properties were achieved by heat treatment in oxygen at 00°C. On the other hand, in order to put the thin film into practical use in electronic devices, it is required to form the film at a lower temperature of 500 to 600° C., but it has been difficult to achieve such a low temperature.
本発明者らは、この種の材料の薄膜をイオンプロセスに
より付着させると、薄膜状の高温超電導体が形成される
ことを発見するとともに、高温アニール処理が不安な薄
膜超電導体の製造方法を発明した。The present inventors discovered that a thin film-like high temperature superconductor is formed when a thin film of this type of material is deposited by an ion process, and also invented a method for manufacturing a thin film superconductor that is not susceptible to high-temperature annealing. did.
問題点を解決するための手段
本発明の薄膜超電導体の製造方法は、基体表面に少（と
もＡ、Ｂ、Ｃｕを含む酸化物で、元素のモル比率が
の複合化合物被膜をスパッタ蒸着する際！こ、基体表面
を酸素イオンで照射するものである。ここにＡはＳｃ、
Ｙおよびランタン系列元素（原子番号５７−７１）のう
ちすくな（とも一種、ＢはＢａ。Means for Solving the Problems The method for producing a thin film superconductor of the present invention involves sputter-depositing a composite compound film on the surface of a substrate, which is an oxide containing A, B, and Cu, and has a molar ratio of the elements. !This is to irradiate the substrate surface with oxygen ions. Here, A is Sc,
Among Y and lanthanum series elements (atomic number 57-71), B is Ba.
Ｓｒ、Ｃａ、Ｂｅ、ＭｇなどＩＩａ族元素のうちの少な
くとも一種の元素を示す。Indicates at least one element from group IIa elements such as Sr, Ca, Be, and Mg.
さらに、望ましくは、本発明において、基体表面の温度
ＴｓをＴｃ≧Ｔｓ≧Ｔｃとするものである。ここにＴｔ
、Ｔｃはそれぞれ複合化合物の正方晶／斜方晶転移温度
、結晶化温度を示す。Furthermore, in the present invention, preferably, the temperature Ts of the substrate surface satisfies Tc≧Ts≧Tc. Tt here
, Tc indicate the tetragonal/orthorhombic transition temperature and crystallization temperature of the composite compound, respectively.
作用
本発明にかかる薄膜超電導体の製造方法は、超電導体を
低温度で薄膜化することが可能となる。Function: The method for producing a thin film superconductor according to the present invention enables the superconductor to be made into a thin film at a low temperature.
すなわち、薄膜化は超電導体の素材を原子状態という極
微粒子に分解してから基体上に堆積させるから、形成さ
れた超電導体の組成は本質的に均質であるとともに、蒸
着時に基板表面が酸素イオンで照射されると高温熱処理
なしに超電導特性が得られる。したがって本発明により
非常に高精度の超電導体が本発明の方法を用いて実現さ
れる。In other words, in thin film formation, the superconductor material is decomposed into ultrafine particles in the atomic state and then deposited on the substrate, so the composition of the formed superconductor is essentially homogeneous, and the substrate surface is exposed to oxygen ions during deposition. Superconducting properties can be obtained without high-temperature heat treatment. According to the invention, therefore, superconductors of very high precision are realized using the method of the invention.
実施例 本発明の実施例を図面とともに説明する。Example Embodiments of the present invention will be described with reference to the drawings.
第１図において、複合化合物被膜１２は、スパッタガン
１３で素材の原子状１４に分解し、これを基板１１上に
蒸着する。この場合、超電導体Ａ−Ｂ−Ｃｕ−０は結晶
構造や組成式がまだ明確には決定されていないが、酸素
欠損ペロブスカイトＡ Ｉ Ｂ ２ Ｃｕ ３０７−
ｘともいわれている。本発明者等は、作製された被膜に
おいて元素比率かの範囲にあれば、臨界温度に多少の差
があっても超電導現象が見出されることを確認した。In FIG. 1, a composite compound film 12 is decomposed into atomic parts 14 of the material using a sputter gun 13, and these are vapor-deposited onto a substrate 11. In this case, the crystal structure and composition formula of the superconductor A-B-Cu-0 have not yet been clearly determined, but the superconductor A-B-Cu-0 is an oxygen-deficient perovskite A I B 2 Cu 307-
It is also called x. The present inventors have confirmed that superconducting phenomena can be observed even if there is a slight difference in critical temperature, provided that the element ratio is within a certain range in the produced film.
このようなスパッタ被膜において超電導特性を得るには
、通常２００〜７００℃の基板温度で成膜した後、さら
に空気中あるいは酸素雰囲気中で９００〜１０００℃高
温熱処理を施す必要があった。ところが本発明者らは、
スパッタ蒸着時に基板表面が酸素イオン１５に照射され
ていれば、意外にも高温熱処理なしに超電導特性が得ら
れることを発見した。In order to obtain superconducting properties in such a sputtered film, it is usually necessary to form the film at a substrate temperature of 200 to 700°C, and then further perform high-temperature heat treatment at 900 to 1000°C in air or an oxygen atmosphere. However, the inventors
It has been surprisingly discovered that superconducting properties can be obtained without high-temperature heat treatment if the substrate surface is irradiated with oxygen ions 15 during sputter deposition.
すなわち、酸化マグネシウム単結晶（１００）面を基体
１１として用い、スパッタガン１３により、焼結したＹ
Ｉ Ｂ ａ ２ Ｃｕ ｓ Ｏｘターゲット１７をＡ
ｒガスでスパッタリング蒸発させるとともに、上記スパ
ッタガン１３とは別に設けた酸素イオンガン１６により
、酸素イオン１５を基体１１に照射し、上記基体１１上
に結晶性のＹ Ｉ Ｂ ａ ２Ｃｕ３０７− ｓ被膜１
２を形成した。スパッタガス圧力は０．５Ｐａ、スパッ
タリング電力１５０Ｗ、スパッタリング時間１時間、基
板温度６５０℃とした。また、酸素イオンビームは、加
速電圧１０００ｖ、電流１００μＡであった。成膜後の
複合化合物被膜の超電導特性を第２図に示す。ゼロ抵抗
臨界温度は８０に以上を示し、良好な特性が得られたこ
とを本発明者等は確認した。さらに液体窒素温度（７７
Ｋ）での臨界電流密度が２０万Ａ ／ ｃｎ？に達し、
実用上非常に有効であることも合わせて確認した。That is, using a magnesium oxide single crystal (100) plane as the substrate 11, sintered Y
I B a 2 Cu s Ox target 17
While sputtering and evaporating with r gas, the substrate 11 is irradiated with oxygen ions 15 using an oxygen ion gun 16 provided separately from the sputter gun 13 to form a crystalline YIBa 2Cu307-s coating 1 on the substrate 11.
2 was formed. The sputtering gas pressure was 0.5 Pa, the sputtering power was 150 W, the sputtering time was 1 hour, and the substrate temperature was 650°C. Further, the oxygen ion beam had an acceleration voltage of 1000 V and a current of 100 μA. Figure 2 shows the superconducting properties of the composite compound film after film formation. The zero resistance critical temperature was 80 or higher, and the inventors confirmed that good characteristics were obtained. In addition, liquid nitrogen temperature (77
K) is the critical current density 200,000 A/cn? reached,
It was also confirmed that it is very effective in practice.
この場合、なぜ基板表面を酸素イオンビーム中にさらす
と高温熱処理なしに良好な超電導特性が得られるかは明
らかではないが、成膜中のアルゴンあるいは酸素イオン
の照射が被膜の結晶性や酸素濃度に好影響を与えるため
と考えられる。In this case, it is not clear why good superconducting properties can be obtained by exposing the substrate surface to an oxygen ion beam without high-temperature heat treatment. This is thought to be because it has a positive effect on
この場合、さらに本発明者らは蒸着中の基板温度が結晶
学的に見て最適範囲であることを発見した。すなわち、
基板温度をＴｓとすると、Ｔｃ≦Ｔｓ≦Ｔｔが、超電導
薄膜を形成するための最適基板温度範囲であることを本
発明者らは確認した。ここに、Ｔｃは複合化合物薄膜の
結晶化温度、Ｔｔは複合化合物性膜の結晶構造の正方晶
／斜方晶転移温度を示す。In this case, the inventors further discovered that the substrate temperature during deposition is in the crystallographically optimal range. That is,
The present inventors have confirmed that, where Ts is the substrate temperature, Tc≦Ts≦Tt is the optimum substrate temperature range for forming a superconducting thin film. Here, Tc represents the crystallization temperature of the composite compound thin film, and Tt represents the tetragonal/orthorhombic transition temperature of the crystal structure of the composite compound film.
すなわち、第３図に示すごと（、基板温度ＴｓをＴｔ以
上にして蒸着すると、形成された薄膜の構造は立方晶に
なり、半導体的な特性を示した。That is, as shown in FIG. 3, when the deposition was carried out at a substrate temperature Ts equal to or higher than Tt, the structure of the formed thin film became a cubic crystal structure and exhibited semiconductor-like characteristics.
一方、基板温度Ｔｓｆ！：Ｔｃ以下にすると、形成され
た薄膜の構造は非晶質で、高抵抗の電気絶縁性を示した
。超電導特性は、基板温度Ｔｓが、ＴｃとＴｔの間にお
いて得られ、この場合結晶構造は斜方晶であった。この
場合本発明者らは酸素イオンビームを用いないで蒸着す
ると、Ｔｃ＜Ｔｓ＜Ｔｔの範囲においても、形成された
薄膜は、半導体的で、超電導は示さなかった。なおＹ−
Ｂａ−Ｃｕ−０系材料では、Ｔ ｃ ：６００℃、Ｔｔ
Ｎ−７００〜８００℃にあることを本発明者らは確認し
た。ちなみに上記第１図の特性例は、Ｔｓ＝６５０℃、
Ｔｃ≦Ｔｓ≦Ｔｔの条件を満足している。On the other hand, the substrate temperature Tsf! : When the temperature was lower than Tc, the structure of the formed thin film was amorphous and exhibited high resistance electrical insulation. Superconducting properties were obtained when the substrate temperature Ts was between Tc and Tt, and in this case the crystal structure was orthorhombic. In this case, when the present inventors performed vapor deposition without using an oxygen ion beam, the formed thin film was semiconductor-like and did not exhibit superconductivity even in the range of Tc<Ts<Tt. Furthermore, Y-
For Ba-Cu-0 based materials, Tc: 600°C, Tt
The present inventors confirmed that the temperature is N-700 to 800°C. By the way, in the characteristic example shown in Figure 1 above, Ts=650℃,
The condition of Tc≦Ts≦Tt is satisfied.
従来の蒸着では、本発明者らの確立した基板温度条件Ｔ
ｃ≦Ｔｓ≦Ｔｔと、酸素イオン照射プロセスを用いてい
ないため、必ず蒸着後酸化雰囲気中で９００ ℃程度の
温度アニール処理を行い超電導特性を実現している。こ
れに対し、本発明の製造方法では上記高温アニール処理
が不要であることが大きな特徴である。In conventional vapor deposition, the substrate temperature condition T established by the present inventors is
Since c≦Ts≦Tt and no oxygen ion irradiation process is used, annealing treatment at a temperature of about 900° C. in an oxidizing atmosphere is always performed after vapor deposition to achieve superconducting properties. In contrast, a major feature of the manufacturing method of the present invention is that the above-mentioned high-temperature annealing treatment is unnecessary.
この種の３元化合物超電導体Ａ Ｉ Ｂ ２ Ｃｕ ３
０７−Ｘの構成元素ＡおよびＢの変化による超電導特性
の変化の詳細は明らかではない。ただＡは、３価、Ｂは
２価を示しているのは事実ではある。This type of ternary compound superconductor A I B 2 Cu 3
Details of changes in superconducting properties due to changes in constituent elements A and B of 07-X are not clear. However, it is true that A indicates trivalence and B indicates divalence.
Ａ元素としてＹについて例をあげて説明したが、Ｓｃや
Ｌａ、さらにランタン系列の元素（原子番号５７〜７１
）でも、超電導転移温度が変化する程度で本質的な発明
の特性を変えるものではない。Although Y was explained as an example of element A, Sc, La, and even lanthanum series elements (atomic numbers 57 to 71)
) However, the extent to which the superconducting transition temperature changes does not change the essential characteristics of the invention.
また、Ｂ元素においても、Ｓｒ、Ｃａ５Ｂａ等Ｉｌａ族
元素の変化は超電導転移温度を１０’に程度変化させる
が、本質的に本発明の特性を変えるものではない。Also, in the B element, changes in Ila group elements such as Sr and Ca5Ba change the superconducting transition temperature by about 10', but this does not essentially change the characteristics of the present invention.
また、本発明における蒸着プロセスは、スパッタガンに
ついて具体例を示したが、蒸着された薄膜Ｙ、Ｂａ、Ｃ
ｕの化学組成が所望の比率になっておりさえすればよく
、スパッタ以外にＭＢＥ、ＣＶＤなど熱的、化学的蒸着
法も実用される。さらに、基板の温度は被覆したい基体
の表面さえ温度が所望の値になっておりさえすればよい
ことはいうまでもなく、基体の表面のみ照射などで昇温
させてもよい。Moreover, although the vapor deposition process in the present invention has shown a specific example using a sputter gun, the thin film Y, Ba, C
It is only necessary that the chemical composition of u be in a desired ratio, and in addition to sputtering, thermal and chemical vapor deposition methods such as MBE and CVD are also practical. Furthermore, it goes without saying that the temperature of the substrate only needs to be such that the temperature of the surface of the substrate to be coated reaches a desired value, and only the surface of the substrate may be heated by irradiation or the like.
発明の効果
とりわけ、本発明にかかる超電導体は、超電導体を低温
で薄膜化できる所に大きな特色がある。Effects of the Invention Particularly, the superconductor according to the present invention has a great feature in that the superconductor can be made into a thin film at a low temperature.
すなわち、作製された薄膜においてＡ ＋ Ｂ ＊ Ｃ
ｕ元素の組成比、結晶構造、酸素濃度の制御を容易に再
現性良く行うことができる。したがって、非常に高精度
の超電導体が本発明で実現される。That is, in the produced thin film A + B * C
The composition ratio, crystal structure, and oxygen concentration of the u element can be easily controlled with good reproducibility. Therefore, a superconductor with very high precision is realized with the present invention.
以上の説明のごとく本発明の薄膜超電導体の製造方法に
よると、例えば結晶性基体上に超電導薄膜が低温で形成
されるので焼結体より本質的により精度が高い上Ｓｔあ
るいはＧａＡｓなどのデバイスとの集積化が可能である
とともに、ジョセフソン素子など各種の超電導デバイス
の製造に実用＝ １０−
される。特にこの種の化合物超電導体の転移温度が室温
になる可能性もあり、従来の実用の範囲は広（、本発明
の工業的価値は高い。As explained above, according to the method of manufacturing a thin film superconductor of the present invention, a superconducting thin film is formed on a crystalline substrate at a low temperature, so that it can be used with devices such as St or GaAs, which has essentially higher precision than a sintered body. It is possible to integrate the devices, and it is also put into practical use in the production of various superconducting devices such as Josephson elements. In particular, the transition temperature of this type of compound superconductor may be room temperature, so the range of conventional practical use is wide (and the industrial value of the present invention is high).
第１図は本発明の一実施例の薄膜超電導体の製造方法の
概略基本構成断面図、第２図は本発明の方法における薄
膜超電導体の基本特性図、第３図は本発明における薄膜
超電導体製造方法の基体概略図である。
１１・・・基体、１２・・・複合化合物被膜、１５・・
・酸素イオン。FIG. 1 is a schematic cross-sectional view of the basic configuration of a method for manufacturing a thin film superconductor according to an embodiment of the present invention, FIG. 2 is a basic characteristic diagram of the thin film superconductor in the method of the present invention, and FIG. 3 is a diagram showing the basic characteristics of the thin film superconductor in the method of the present invention. FIG. 3 is a schematic diagram of a base body in a method for manufacturing a body. 11... Substrate, 12... Composite compound coating, 15...
・Oxygen ions.
Claims (4)
含む酸化物で、元素のモル比率が ０．５≦（Ａ＋Ｂ）／Ｃｕ≦２．５ の複合化合物被膜をスパッタ蒸着する際に、少なくとも
基体表面を酸素イオンで照射することを特徴とする薄膜
超電導体の製造方法。(1) When sputter-depositing on a substrate a composite compound film of an oxide containing at least element A, element B, and Cu, with a molar ratio of elements of 0.5≦(A+B)/Cu≦2.5, at least A method for producing a thin film superconductor, the method comprising irradiating the surface of a substrate with oxygen ions.
の範囲第１項記載の薄膜超電導体の製造方法。(2) The method for producing a thin film superconductor according to claim 1, wherein the vapor deposition is performed by sputtering.
Ｔｔ≧Ｔｓ≧Ｔｃの範囲であることを特徴とする特許請
求の範囲第１項記載の薄膜超電導体の製造方法。ここに
、Ｔｔ、Ｔｃはそれぞれ複合化合物の正方晶／斜方晶転
移温度、結晶化温度を示す。(3) The method for manufacturing a thin film superconductor according to claim 1, wherein the temperature Ts of at least the surface of the substrate is in the range of Tt≧Ts≧Tc in the vapor deposition. Here, Tt and Tc respectively represent the tetragonal/orthorhombic transition temperature and crystallization temperature of the composite compound.
の範囲第１項記載の薄膜超電導体の製造方法。(4) The method for producing a thin film superconductor according to claim 1, wherein the vapor deposition is performed by thermal vapor deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62262060A JPH07100609B2 (en) | 1987-10-16 | 1987-10-16 | Method of manufacturing thin film superconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62262060A JPH07100609B2 (en) | 1987-10-16 | 1987-10-16 | Method of manufacturing thin film superconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01105416A true JPH01105416A (en) | 1989-04-21 |
| JPH07100609B2 JPH07100609B2 (en) | 1995-11-01 |
Family
ID=17370469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62262060A Expired - Lifetime JPH07100609B2 (en) | 1987-10-16 | 1987-10-16 | Method of manufacturing thin film superconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07100609B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01220312A (en) * | 1988-02-29 | 1989-09-04 | Sumitomo Cement Co Ltd | Manufacture of superconductive ceramic wire rod |
| JPH01261204A (en) * | 1988-04-11 | 1989-10-18 | Fujikura Ltd | Production of oxide based superconductor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63245829A (en) * | 1987-03-31 | 1988-10-12 | Sumitomo Electric Ind Ltd | Manufacture of oxide superconductive thin film |
-
1987
- 1987-10-16 JP JP62262060A patent/JPH07100609B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63245829A (en) * | 1987-03-31 | 1988-10-12 | Sumitomo Electric Ind Ltd | Manufacture of oxide superconductive thin film |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01220312A (en) * | 1988-02-29 | 1989-09-04 | Sumitomo Cement Co Ltd | Manufacture of superconductive ceramic wire rod |
| JPH01261204A (en) * | 1988-04-11 | 1989-10-18 | Fujikura Ltd | Production of oxide based superconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07100609B2 (en) | 1995-11-01 |
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